C 3198 TRANSISTOR Search Results

A1266

Abstract: transistor a1266 A1266 Y A1266 GR a1266 transistor 2SC3198 TRANSISTOR 2SC 3198 TRANSISTOR C 3198 c 3198 transistor transistor 2SC3198
Contextual Info: 2SC 3198 2SC 3198 SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS 1 Unit in mm ( A P P LICATIONS ) • L o w F r e q u e n c y Am plifiers ■ L o w N o is e Am plifiers ( FE A TU R E S ^ • E xc e ll e nt h FE Li n e ar it y, h FE (0.1mA) / h FE (2mA) = 0 . 9 5 (Typ.)

NPN Bipolar Transistor

Abstract: KTC3198-O TO-92 NPN Bipolar Transistor Bl 370 MARKING A1G
Contextual Info: KTC3198-O/Y/GR/BL Taiwan Semiconductor Small Signal Product TO-92 NPN Bipolar Transistor FEATURES - The transistor is subdivided into four groups according to its DC current gain: O, Y, GR, BL - Pb free and RoHS compliant MECHANICAL DATA - Case: TO-92 small outline plastic package

IC 4822

Abstract: transistor c1093 AC digital voltmeter using 7107 TRANSISTOR REPLACEMENT GUIDE c9014 R1019 FM ic c1093 AD905wt cf745 04 p AD905WA china DVD player lens circuit diagram
Contextual Info: DVD Receiver LX3700D/21S/21R/22S/25S LX3750W/22S/25S/37 Service Service Service LX3750W LX3700D Service Manual TABLE OF CONTENTS COMPACT Page Location of PC Boards . 1-2 Versions Variation & Package . 1-2

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94 FEATURES * 150 Volt VCE0 * 1 Amp continuous current * Ptot= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX554 ZTX555 UNIT Collector-Base Voltage V CBO -140 -160 V C ollector-Em itter Voltage

FZT600

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON FZT600 TRANSISTOR 1 Issu E 2- FEBRUARY 1995 FEATURES ! I ‘ * 2A continuous * Guaranteed 140 VOLT current c VCE[l hFE Specified up to 1A E PART MARKING DETAIL FZT600 - * ,BSOLUTE MAXIMUM PARAMETFR .—.-.

91010-01TX

Abstract: MHQ6002HX MD6002 MHQ6002
Contextual Info: 4bE J> • b3b7254 GQISfiTB 4 ■ MOTb“F ’^ v £ ? MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA DM0 MD6002HX, HXV (DUAL) MD6002FHXV (DUAL) *MHQ6002HX, HXV (QUAD) MQ6002HXV (QUAD) Dual/Quad NPN/PNP Complementary Pairs Small-Signal Transistors

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94 FEATURES * 150 Volt V,CEO 1 Amp continuous current P,o,= 1 Watt E-Line TQ92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO C ollector-Em itter Voltage ZTX555

ZTX555

Abstract: ZTX554 DSA003769
Contextual Info: ZTX554 ZTX555 ISSUE 1 – MARCH 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS IB1=IB2=IC/10 ZTX554/55-2 -0.8 tr ts ns µs 500 5 Switching time VCE sat - (Volts) IC/IB=10 -0.6 -0.4 -0.2 -0.0001 -0.001 -0.01 -0.1

Contextual Info: ZTX554 Not Recommended for New Design Please Use ZTX555 ZTX554 ZTX555 ISSUE 1 – MARCH 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS IB1=IB2=IC/10 ZTX554/55-2 -0.8 tr ts ns µs 500 5 Switching time VCE sat - (Volts)

Z60N

Contextual Info: MITSUBISHI RF POWER TRANSISTOR bSMTflST QÜ17703 ÔTT 2SC4240 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC 4240 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for VHF power amplifier applications. OUTLINE DRAWING Dim ensions in mm

Transistor C 3199

Abstract: LADC-100 BD790 BD792 bd791 bd789
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD789 Com plem entary Plastic Silicon Power Transistors BD791 * PNP . . . designed for low power audio amplifier and low-current, high speed switching applications. • • • • BD790 BD792* High Collector-Emitter Sustaining Voltage —

UCN5830B

Abstract: UCN5831B GP-004-1 UCN58 WP001A
Contextual Info: ALLEGRO MICROSYSTEMS IN C 33 E D 05G433Ö Ü00527S b • ALGR BiMOS II4-B IT LATCHED DRIVER The UCN5830B latched driver is a high-current integrated circuit comprised of CMOS data latches, a bipolar Darlington transistor driver for each latch, and CMOS control circuitry for the common STROBE

Contextual Info: 5830 BiMOS II 4-BIT LATCHED DRIVER The UCN5830B latched driver is a high-current integrated circuit com prised of CM OS data latches, a bipolar Darlington transistor driver for each latch, and CM OS control circuitry for the com m on STROBE and O UTPUT ENABLE functions. Although primarily designed for use

Contextual Info: N AUER PHILIPS/DISCRETE 86D 01398 ObE D • bbS3T31 D013b3b 0 ” d _JL BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.

c 3198 transistor

Abstract: 2N6383 IC 6648 2N6648 2n6385 sc 3198 transistor
Contextual Info: MOTOROLA SC XSTR S/ R F 12E D I b3b?5S4 □ 004 3MG 1 r -5 3 '^ 9 r -3 3 '3 / MOTOROLA SEMICONDUCTOR TECHNICAL DATA 15 A M P E R E P E A K COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . m o n o lith ic com plem en tary silicon Darlington transistors designed

Contextual Info: MPSA92 / MMBTA92 / PZTA92 MPSA92 MMBTA92 PZTA92 C C E C B TO-92 SOT-23 E B SOT-223 Mark: 2D B E C PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2n4260

Abstract: 2N4261 2N4260 MOTOROLA motorola 2N4261
Contextual Info: MOTORCLA SC XSTRS/R F 1 SE 0 I b 3 b ? a S «4 □OfibMO"! ^ | MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 15 Vdc Emitter-Base Voltage VEBO 4.5 Vdc Collector Current — Continuous ic 30 mAdc Total Device Dissipation @ Ta = 25°C

Contextual Info: MOTOROL A SC ÍXSTRS/R F> 6367254 MOTOROLA SC XSTR S/R F 96D 80464 - NPN MOTOROLA - 3 3 - / 3 7^ 3 «3 - 2N6315, 2N6316 SEMICONDUCTOR PNP TECHNICAL DATA 2N6317, 2N6318 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

40788

Contextual Info: HARRIS SEMICOND SECTOR 44E D 13 4302571 0037517 7 Ö H A S T - 4 3 '2 - 1 CD 4078B Types 3 HARRIS Features: CMOS 8-lnput NOR/OR Gate High-Voltage Types 20-Volt Rating) • C D 40788 NO R/O R Gate provides the system designer w ith direct im plem enta­ tio n o f the positive-logic 8-input NOR and

IRF822

Abstract: IRF820 IRF823 IRF821 Diode IRF820
Contextual Info: Standard Power M O SFETs- IRF820, IRF821, IRF822, IRF823 F ile N u m b e r 1581 Power MOS Fîeld-Effect Transistors N -CHANNEL ENHANCEM ENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.0A and 2.5A, 450V-500V

an-9744

Abstract: Transistor 3-347 AN9726 AN9718 Transistor 3-354
Contextual Info: H A Semiconductor RM S S Signal Processing Communications 3 C o m m u n ic a tio n s P ro d u cts PAGE HI1177 8-Bit, 40MSPS, 2-Channel D/A Converter. 3-5 HI5628 8-Bit, 165/125/60MSPS, Dual High Speed CMOS D/A Converter.

wl smd transistor

Abstract: alternator circuit diagram transistor SMD WL sc 3198 transistor CAR ALTERNATOR REGULATOR 13,8 transistor ignition circuit transistor 3199 CAR ALTERNATOR REGULATOR transistor marking R10 smd MTB20
Contextual Info: CS3361 Alternator Voltage Regulator FET Driver The CS3361 integral alternator regulator integrated circuit provides the voltage regulation for automotive, 3–phase alternators. It drives an external logic level N channel enhancement power FET for control of the alternator field current. In the event of a charge fault,

VON100

Abstract: VOP100
Contextual Info: HFA1115/883 S E M I C O N D U C T O R High Speed, Low Power, Output Limiting Closed Loop Buffer Amplifier July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.

Contextual Info: HA-2640/883 S E M I C O N D U C T O R High Voltage Operational Amplifier July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. HA-2640/883 monolithic operational amplifier is designed to