NPN Bipolar Transistor
Abstract: KTC3198-O TO-92 NPN Bipolar Transistor Bl 370 MARKING A1G
Text: KTC3198-O/Y/GR/BL Taiwan Semiconductor Small Signal Product TO-92 NPN Bipolar Transistor FEATURES - The transistor is subdivided into four groups according to its DC current gain: O, Y, GR, BL - Pb free and RoHS compliant MECHANICAL DATA - Case: TO-92 small outline plastic package
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KTC3198-O/Y/GR/BL
C/10s
195mg
S1405004
NPN Bipolar Transistor
KTC3198-O
TO-92 NPN Bipolar Transistor
Bl 370
MARKING A1G
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IC 4822
Abstract: transistor c1093 AC digital voltmeter using 7107 TRANSISTOR REPLACEMENT GUIDE c9014 R1019 FM ic c1093 AD905wt cf745 04 p AD905WA china DVD player lens circuit diagram
Text: DVD Receiver LX3700D/21S/21R/22S/25S LX3750W/22S/25S/37 Service Service Service LX3750W LX3700D Service Manual TABLE OF CONTENTS COMPACT Page Location of PC Boards . 1-2 Versions Variation & Package . 1-2
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LX3700D/21S/21R/22S/25S
LX3750W/22S/25S/37
LX3750W
LX3700D
BAS316
BZX79-B5V1
BZX79-B15
IC 4822
transistor c1093
AC digital voltmeter using 7107
TRANSISTOR REPLACEMENT GUIDE c9014
R1019 FM ic
c1093
AD905wt
cf745 04 p
AD905WA
china DVD player lens circuit diagram
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FZT600
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON FZT600 TRANSISTOR 1 Issu E 2- FEBRUARY 1995 FEATURES ! I ‘ * 2A continuous * Guaranteed 140 VOLT current c VCE[l hFE Specified up to 1A E PART MARKING DETAIL FZT600 - * ,BSOLUTE MAXIMUM PARAMETFR .—.-.
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OT223
FZT600
10OmA,
20MHz
Col16ctor
FZT600
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ZTX555
Abstract: ZTX554 DSA003769
Text: ZTX554 ZTX555 ISSUE 1 MARCH 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS IB1=IB2=IC/10 ZTX554/55-2 -0.8 tr ts ns µs 500 5 Switching time VCE sat - (Volts) IC/IB=10 -0.6 -0.4 -0.2 -0.0001 -0.001 -0.01 -0.1
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ZTX554
ZTX555
IC/10
ZTX554/55-2
ZTX555
ZTX554
DSA003769
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Untitled
Abstract: No abstract text available
Text: ZTX554 Not Recommended for New Design Please Use ZTX555 ZTX554 ZTX555 ISSUE 1 MARCH 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS IB1=IB2=IC/10 ZTX554/55-2 -0.8 tr ts ns µs 500 5 Switching time VCE sat - (Volts)
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ZTX554
ZTX555
ZTX555
100ms
ZTX554
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Untitled
Abstract: No abstract text available
Text: MPSA92 / MMBTA92 / PZTA92 MPSA92 MMBTA92 PZTA92 C C E C B TO-92 SOT-23 E B SOT-223 Mark: 2D B E C PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MPSA92
MMBTA92
PZTA92
MPSA92
MMBTA92
OT-23
OT-223
OT-223
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wl smd transistor
Abstract: alternator circuit diagram transistor SMD WL sc 3198 transistor CAR ALTERNATOR REGULATOR 13,8 transistor ignition circuit transistor 3199 CAR ALTERNATOR REGULATOR transistor marking R10 smd MTB20
Text: CS3361 Alternator Voltage Regulator FET Driver The CS3361 integral alternator regulator integrated circuit provides the voltage regulation for automotive, 3–phase alternators. It drives an external logic level N channel enhancement power FET for control of the alternator field current. In the event of a charge fault,
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CS3361
CS3361
MR2502
MPSA13
MTB20N20E
wl smd transistor
alternator circuit diagram
transistor SMD WL
sc 3198 transistor
CAR ALTERNATOR REGULATOR 13,8
transistor ignition circuit
transistor 3199
CAR ALTERNATOR REGULATOR
transistor marking R10 smd
MTB20
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VON100
Abstract: VOP100
Text: HFA1115/883 S E M I C O N D U C T O R High Speed, Low Power, Output Limiting Closed Loop Buffer Amplifier July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
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HFA1115/883
MIL-STD883
HFA1115/883
225MHz,
VON100
VOP100
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Untitled
Abstract: No abstract text available
Text: HA-2640/883 S E M I C O N D U C T O R High Voltage Operational Amplifier July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. HA-2640/883 monolithic operational amplifier is designed to
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HA-2640/883
MIL-STD883
HA-2640/883
HV200
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A1266
Abstract: transistor a1266 A1266 Y A1266 GR a1266 transistor 2SC3198 TRANSISTOR 2SC 3198 TRANSISTOR C 3198 c 3198 transistor transistor 2SC3198
Text: 2SC 3198 2SC 3198 SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS 1 Unit in mm ( A P P LICATIONS ) • L o w F r e q u e n c y Am plifiers ■ L o w N o is e Am plifiers ( FE A TU R E S ^ • E xc e ll e nt h FE Li n e ar it y, h FE (0.1mA) / h FE (2mA) = 0 . 9 5 (Typ.)
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2SC3198
2SC3198Â
2SA1266/2S
A1266Â
150mA
100mA,
IB-100mA
f-30MHz
A1266
transistor a1266
A1266 Y
A1266 GR
a1266 transistor
TRANSISTOR 2SC 3198
TRANSISTOR C 3198
c 3198 transistor
transistor 2SC3198
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94 FEATURES * 150 Volt VCE0 * 1 Amp continuous current * Ptot= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX554 ZTX555 UNIT Collector-Base Voltage V CBO -140 -160 V C ollector-Em itter Voltage
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ZTX554
ZTX555
-120V
-140V
-100mA,
-10mA*
ZTX555
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91010-01TX
Abstract: MHQ6002HX MD6002 MHQ6002
Text: 4bE J> • b3b7254 GQISfiTB 4 ■ MOTb“F ’^ v £ ? MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA DM0 MD6002HX, HXV (DUAL) MD6002FHXV (DUAL) *MHQ6002HX, HXV (QUAD) MQ6002HXV (QUAD) Dual/Quad NPN/PNP Complementary Pairs Small-Signal Transistors
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b3b7254
MD6002HX,
MD6002FHXV
MHQ6002HX,
MQ6002HXV
91010-01TX
MHQ6002HX
MD6002
MHQ6002
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94 FEATURES * 150 Volt V,CEO 1 Amp continuous current P,o,= 1 Watt E-Line TQ92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO C ollector-Em itter Voltage ZTX555
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ZTX554
ZTX555
001G35S
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Z60N
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR bSMTflST QÜ17703 ÔTT 2SC4240 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC 4240 is a silicon NPN epitaxial planar type transistor specifi cally designed for VHF power amplifier applications. OUTLINE DRAWING Dim ensions in mm
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2SC4240
peg13dB.
220pF,
1000pF,
4700p
Z60N
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UCN5830B
Abstract: UCN5831B GP-004-1 UCN58 WP001A
Text: ALLEGRO MICROSYSTEMS IN C 33 E D 05G433Ö Ü00527S b • ALGR BiMOS II4-B IT LATCHED DRIVER The UCN5830B latched driver is a high-current integrated circuit comprised of CMOS data latches, a bipolar Darlington transistor driver for each latch, and CMOS control circuitry for the common STROBE
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0SG433fi
PP-025-1
UCN5830B
UCN5831B
GP-004-1
UCN58
WP001A
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Untitled
Abstract: No abstract text available
Text: 5830 BiMOS II 4-BIT LATCHED DRIVER The UCN5830B latched driver is a high-current integrated circuit com prised of CM OS data latches, a bipolar Darlington transistor driver for each latch, and CM OS control circuitry for the com m on STROBE and O UTPUT ENABLE functions. Although primarily designed for use
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UCN5830B
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE 86D 01398 ObE D • bbS3T31 D013b3b 0 ” d _JL BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.
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bbS3T31
D013b3b
BLV98
OT-171
ECHANICA53T31
0013b42
BLV98
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D 1398 Transistor
Abstract: d 1398 BLV98 32Q1 ci 1404
Text: N AMER PHILIPS/DISCRETE 86D OLE 0 1398 D "d • bfci53Ii31 D013b3b 3 3 - ft A ~~ BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor In SOT-171 envelope intended for use in class-B operated base station transmitters in the 900 MHz communications band.
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bfci53Ii31
D013b3b
BLV98
OT-171
BLV98
D 1398 Transistor
d 1398
32Q1
ci 1404
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c 3198 transistor
Abstract: 2N6383 IC 6648 2N6648 2n6385 sc 3198 transistor
Text: MOTOROLA SC XSTR S/ R F 12E D I b3b?5S4 □ 004 3MG 1 r -5 3 '^ 9 r -3 3 '3 / MOTOROLA SEMICONDUCTOR TECHNICAL DATA 15 A M P E R E P E A K COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . m o n o lith ic com plem en tary silicon Darlington transistors designed
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----2N6384
2N6385
c 3198 transistor
2N6383
IC 6648
2N6648
sc 3198 transistor
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2n4260
Abstract: 2N4261 2N4260 MOTOROLA motorola 2N4261
Text: MOTORCLA SC XSTRS/R F 1 SE 0 I b 3 b ? a S «4 □OfibMO"! ^ | MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 15 Vdc Emitter-Base Voltage VEBO 4.5 Vdc Collector Current — Continuous ic 30 mAdc Total Device Dissipation @ Ta = 25°C
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Untitled
Abstract: No abstract text available
Text: MOTOROL A SC ÍXSTRS/R F> 6367254 MOTOROLA SC XSTR S/R F 96D 80464 - NPN MOTOROLA - 3 3 - / 3 7^ 3 «3 - 2N6315, 2N6316 SEMICONDUCTOR PNP TECHNICAL DATA 2N6317, 2N6318 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS
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2N6315,
2N6316
2N6317,
2N6318
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40788
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 44E D 13 4302571 0037517 7 Ö H A S T - 4 3 '2 - 1 CD 4078B Types 3 HARRIS Features: CMOS 8-lnput NOR/OR Gate High-Voltage Types 20-Volt Rating) • C D 40788 NO R/O R Gate provides the system designer w ith direct im plem enta tio n o f the positive-logic 8-input NOR and
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4078B
CD4078BH.
40788
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IRF822
Abstract: IRF820 IRF823 IRF821 Diode IRF820
Text: Standard Power M O SFETs- IRF820, IRF821, IRF822, IRF823 F ile N u m b e r 1581 Power MOS Fîeld-Effect Transistors N -CHANNEL ENHANCEM ENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.0A and 2.5A, 450V-500V
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IRF820,
IRF821,
IRF822,
IRF823
50V-500V
IRF822
IRF823
IRF820
IRF821
Diode IRF820
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an-9744
Abstract: Transistor 3-347 AN9726 AN9718 Transistor 3-354
Text: H A Semiconductor RM S S Signal Processing Communications 3 C o m m u n ic a tio n s P ro d u cts PAGE HI1177 8-Bit, 40MSPS, 2-Channel D/A Converter. 3-5 HI5628 8-Bit, 165/125/60MSPS, Dual High Speed CMOS D/A Converter.
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HI1177
HI5628
HI5640
HI5660
HI5662
HI5667
HI5721
HI5728
HI5731
HI5741
an-9744
Transistor 3-347
AN9726
AN9718
Transistor 3-354
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