C 2907A Search Results

2904a

Abstract: sc2035
Contextual Info: PNP SILICON ANNULAR HERMETIC TRANSISTORS 2N2904,A* . . . d e s ig n e d f o r h ig h - s p e e d s w it c h in g c ir c u it s , D C t o V H F a m p l i f i e r a p p lic a ­ t i o n s a n d c o m p le m e n t a r y c ir c u it r y . thru • H ig h D C C u r r e n t G a in S p e c if ie d — 0 .1 t o 5 0 0 m A d c

PN 2907a

Contextual Info: KSP2907A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISITOR • C o lle c lo r-E m ltte r V oltag e: V e t o = 6 0 V • C o lle c to r D issipation : Pc m a x = 6 2 5 m W TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) C ha ra c te ristic Sym bol R atin g

transistor k7g

Abstract: IC K07 "dual TRANSISTORs" sot363 2907a CMKT2907A transistor marking codes 2907A symbol marking code 04 sot-363 MARKING CODE k07 MARKING 2907A
Contextual Info: CMKT2907A CMKT2907AG SURFACE MOUNT DUAL PNP SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2907A and CMKT2907AG each consist of two individual isolated 2907A PNP silicon transistors, manufactured by the

Contextual Info: CMKT2907A CMKT2907AG w w w. c e n t r a l s e m i . c o m SURFACE MOUNT DUAL PNP SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2907A and CMKT2907AG each consist of two individual isolated 2907A PNP silicon transistors, manufactured by the

NPN 2907A EBC

Abstract: 2907A EBC 2222a pn
Contextual Info: small Signal Transistors TO-92 Case Continued TO-92 T Y P E MO, F A M IL Y LEA D CODE VC B O v CEO v EBO (V) 00 MW *^ C 6 S U ftf MU'! IliN ipstf* *e s 8 "fe w m * WS; •CBO s* V C BC - m • V c s *» c W (V ) MN ' - m (*A ) v C E fS A K > « * C 00 (« A )

2907a

Abstract: CMLT2907A MARKING 2907A
Contextual Info: CMLT2907A SURFACE MOUNT DUAL PNP SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563

Contextual Info: CMLT2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON DUAL PNP TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface

PN 2907a

Abstract: 2907A BF PN2907A
Contextual Info: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*

marking code nt amplifier

Abstract: MARKING 2907A 2907A BF
Contextual Info: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*

CMPT2907A

Contextual Info: Central C M P T 2907A sem ico n d u cto r Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SE M IC O N D U C T O R CMPT2907A type is an PNP silicon transistor manufactu red by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose

BC250A

Contextual Info: 4684955 I T T S E M I C ON DU CTOR S PNP TRANSISTORS 07 87D 02322 D 7*. DeT | 4 ^ 0 4 ^ 5 5 QD05352 7 | I I V/mA Volts max.V mA/mA max. nA C 0b fr at - Vce/ - Ic at —Vce at - I c/ - I b V MHz < -& "IcES -V c E s a t at -V Ce/ - I c max. pF V 10 10 10 B B

MPQ2907

Abstract: PQ2907
Contextual Info: MMPQ2907,A* CASE 751B-05, STYLE 4 SO-16 MAXIMUM RATINGS Rating C o lle cto r-E m itte r V o ltage Symbol M M PQ2907 MMPQ2907A VCEO -4 0 -6 0 Unit , Vdc C ollector-B ase V o ltage VCB -6 0 Em itter-B ase V o ltage V£B - 5 .0 Vdc lC - 600 m A dc C o lle cto r C u rrent — C o ntinuous

Contextual Info: MMPQ2907,A* CASE 751B-03, STYLE 1 SO-16 MAXIMUM RATINGS Rating C o llector-E m itter Voltage Symbol M MPQ2907 MMPQ2907A Unit VCEO -4 0 -6 0 Vdc Vdc Collector-Base Voltage VCB -6 0 Em itter-Base Voltage Veb - 5 .0 Vdc 'c -6 0 0 m Adc Collector C urrent — C ontinuous

2N2475

Abstract: BFS36 BFS38 BFS46 BFS41 2N2605 2N930 BFS36A BFS42 BFS38A
Contextual Info: M ICRO-E CHARACTERISTICS AT 25°C p-n - -P n -p - n l\/l C I'M1U 1IPIV V/1I CURRENT GENERAL PURPOSE IVI tU TRANSISTORS Parameter BFS38A M in. Test Conditions M in. 25 - - 35 v CBO Rated Max. - VCEO sus l c = 5mA, Iß —0 25 v EBCi Rated Max. - 5 >CBO V c b = V c b O f*atec* ^ ax' ^E= 0

2222 a

Abstract: MOTOROLA 2N2905A 2N2904 2N2905A RS 2N2219 MOTOROLA 2N2218 2n2907 331
Contextual Info: PNP SILICON ANNULAR HERMETIC TRANSISTORS 2N2904,A* . . . d e s ig n e d fo r h ig h -sp e e d s w itc h in g c irc u its , DC to VHF a m p lifie r a p p lic a ­ tio n s and c o m p le m e n ta ry c irc u itry . thru • H igh DC C u rre n t G ain S p e cifie d — 0.1 to 500 m A d c

BDV56

Abstract: BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033
Contextual Info: un itti IMI Semelab Mil / Aerospace Division CECC 5 0 0 0 0 QUALIFIED PRODUCT SEM ELAB has one of the largest ranges of C E C C approved power products in Europe. These products have undergone approval to support both new application requirem ents and also existing and “old”

Dynatek 110

Abstract: block diagram of hemodialysis machine UTM ceramic RESISTOR 310-3 74HC590
Contextual Info: 1 Crystal Semiconductor brings the benefits of leadership, high quality, analog VLSI solutions to our customers. 1 C rystal S e m icon du cto r C orporation Data A c q u is itio n Data B ook LIFE SUPPORT AND NUCLEAR POLICY CRYSTAL SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR AND SHOULD NOT BE USED WITHIN

sft214

Abstract: AT1138 SFT213 2N2709 GERMANIUM PNP LOW POWER TRANSISTORS 2sb234 2sb232 SFT240 AOY25 SFT212
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. C R O S S - IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type number non-JED EC whose characteristics are not the same. i This manufacturer-identifying symbol

Contextual Info: PNP Transistors * D is c r e te P O W E R & S ig n a l T e c h n o lo g ie s National p^p s e m i c o n d u c t o r v D evice No. 2N4402 2N4403 Case Style TO-92 92 TO-92 (92) ¥ cbo v v CEO v V EBO (V) Min (V) Min (V) Min 40 40 5 40 40 *CBO M ax Q e h FE

Contextual Info: SMALLSIGNAL_ _ TRANSISTORS GENERAL RURROSE •SASES :_ T O - T O - 39 hpg 9 NF Ptfit vCBO 1 VCEO : ^ : vCEsat fT cob CASE ® I a= vces " ! ‘ ’ kfe *C *c =25°C min. ! min. ! ! min.-max

motorola transistor 2N2907A

Abstract: 2N2905 MOTOROLA MOTOROLA 2N2905A 2N2905A MOTOROLA 2N2906 2n2907 Motorola TRANSISTOR 2n2904 transistor 2N2905 motorola 2N2905 2N2907A
Contextual Info: 2N2904A 2N2905,A, 2N2906,A, 2N2907A 2N3485,A, 2N3486,A JAN, JTX, JTXV AVAILABLE* M A X IM U M RATINGS Symbol Non-A Suffix A-Suffix Unit C o lle c to r-E m itte r V o lta g e VCEO 40 60 V dc C o lle cto r-B a se V o lta g e VCBO 60 E m itte r-B a se V o lta g e

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

k27 transistor

Abstract: MMDT2227-7-F
Contextual Info: SPICE MODELS: MMDT2227 MMDT2227 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · A Complementary Pair C2 Epitaxial Planar Die Construction B1 E1 SOT-363 Ultra-Small Surface Mount Package B C One 2222A-Type NPN, One 2907A-Type PNP

transistor 2222a

Abstract: k27 transistor K27 npn 2222A transistor tr 2222a
Contextual Info: SPICE MODEL: MMDT2227M MMDT2227M Lead-free Green COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · A Complementary Pair Epitaxial Planar Die Construction C2 B1 SOT-26 E1 One 2222A Type NPN , One 2907A Type (PNP) · · · B C