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    C 2665 TRANSISTOR Search Results

    C 2665 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C 2665 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STK4142II

    Abstract: STK4142 ic stk4142 II 1 W stereo amplifier 236W
    Text: Ordering number: EN2665B Thick Film Hybrid IC STK4142II AF Power Amplifier Split Power Supply (25W + 25W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4142II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.


    Original     		PDF EN2665B STK4142II STK4102II STK4142II) STK4101V STK4101II STK4142II] STK4142II STK4142 ic stk4142 II 1 W stereo amplifier 236W

    ic stk4142 II

    Abstract: STK4142II c 2665 ic stk4142 2665-2 2665-3 pin diagram of ic 4040 resistor fix value STK4101II STK4101V
    Text: Ordering number: EN2665B Thick Film Hybrid IC STK4142II AF Power Amplifier Split Power Supply (25W + 25W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4142II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.


    Original     		PDF EN2665B STK4142II STK4102II STK4142II) STK4101V STK4101II STK4142II] ic stk4142 II STK4142II c 2665 ic stk4142 2665-2 2665-3 pin diagram of ic 4040 resistor fix value STK4101V

    AGRB10E

    Abstract: AGRB10E equivalent JESD22-C101A 1661 mhz
    Text: Preliminary Data Sheet February 2004 AGRB10E 10 W, 1.0 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRB10E (1.0 GHz to 2.7 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS)


    Original     		PDF AGRB10E AGRB10E DS04-097RFPP DS03-164RFPP) AGRB10E equivalent JESD22-C101A 1661 mhz

    AGRB10E

    Abstract: JESD22-C101A Inmarsat
    Text: Preliminary Data Sheet January 2004 AGRB10E 10 W, 1.0 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRB10E (1.0 GHz to 2.7 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS)


    Original     		PDF AGRB10E AGRB10E envir32/F, DS03-164RFPP DS03-038RFPP) JESD22-C101A Inmarsat

    AGRC10GM

    Abstract: JESD22-C101A mosfet 6 ghz z823 1661 mhz
    Text: Preliminary Data Sheet November 2004 AGRC10GM 10 W, 2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRC10GM (1.0 GHz to 2.1 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor


    Original     		PDF AGRC10GM AGRC10GM DS04-260RFPP JESD22-C101A mosfet 6 ghz z823 1661 mhz

    OPCA-02

    Abstract: ABB ACS350 ACS350 FMBA-01 9pin D-connector modbus ACS350 drives ACS350-03X-01A9-4 ACS350-01X-09A8-2 J400 acs-cp-a
    Text: ABB general machinery drives ACS350, 0.37 to 7.5 kW / 0.5 to 10 hp Technical catalogue PROFILE INDUSTRIES PRODUCTS APPLICATIONS EXPERTISE PARTNERS SERVICES ACS350_EN_revC.indd 1 30.6.2006 9:40:15 Two ways to select your drive Choice 1: Simply contact your local ABB drives


    Original     		PDF ACS350, ACS350 ACS350 3AFE68596106 HANSAPRINT/SAL06 OPCA-02 ABB ACS350 FMBA-01 9pin D-connector modbus ACS350 drives ACS350-03X-01A9-4 ACS350-01X-09A8-2 J400 acs-cp-a

    OPCA-02

    Abstract: 9pin rs232 D-connector wiring diagram 03X-44A0-4 acs-cp-a ACS350-03X-44A0-4 ABB ACS350 ABB ACS 800 ACS350 NOCH-0030-6X OPMP-01
    Text: Catalog ABB general machinery drives ACS350, 0.37 to 22 kW / 0.5 to 30 hp 14412 ACS350_EN_revG_68596106.indd 1 2.4.2009 15:03:20 Two ways to select your drive Choice 1: Simply contact your local ABB drives sales office see page 19 and let them know what


    Original     		PDF ACS350, ACS350 ACS350 Contro925 3AFE68596106 OPCA-02 9pin rs232 D-connector wiring diagram 03X-44A0-4 acs-cp-a ACS350-03X-44A0-4 ABB ACS350 ABB ACS 800 NOCH-0030-6X OPMP-01

    Untitled

    Abstract: No abstract text available
    Text: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Power MOSFET B-pack E-pack STO-220 N-Channel, Enhancement type Absolute Maximum Ratings Tch V dss V gss Id Pt max [ ”C ] [V ] [V ] [A] [w ] [O ] [pF] [pF] [ns] [ns] 2SK1861 150 +20 4 10


    OCR Scan     		PDF 2SK1861 F05B23VR 2SK1195 STO-220 STO-220

    Untitled

    Abstract: No abstract text available
    Text: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Absolute Maximum Ratings Type No. Electrica Characteristics VcBO VCEO V ebo Ic Ib Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] fC ] [ t ] -5 -7 -1 .5 2SA1795 1796 - 4 0 1876 -8 0 1877 2SC4668 40


    OCR Scan     		PDF 2SA1795 2SC4668 STO-220

    Untitled

    Abstract: No abstract text available
    Text: Surface-Mount Devices Power Transistors w E-pack Bipolar transistors A bsolute M axim um Ratings Type No. 2SA 1795 1796 1876 1877 VcBO VcEO V ebo Ic [V] [V] [V] [A] -6 0 -4 0 -5 -7 -8 0 -8 0 60 40 2SC 4668 -1 -5 -1 .5 100 80 4979 Tj sus (min) [W] [°C] P C ]


    OCR Scan     		PDF OT-89 2SK1861 2SK1195

    2SC460

    Abstract: No abstract text available
    Text: P o w e r T r a n s is to r s E-pack Bipolar transistors Type No. E IA J Absolute Maximum Ratings Electrical C haracteristics V cbo VCEO V ebo Ic Ib Pt T stg [V] [V] [V] [A ] [A ] [W] [•c] [•c] Vceo s u s (min) [V] -5 — 7 -1.5 -55 -40 -3 -1 -5 7 -1.5


    OCR Scan     		PDF 2SA1795 2SC460S Enhance861 F05B23VR 2SK2489 STO-220 2SC460

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors PNP Silicon MPSÄ75 MPSA77 COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Symbol Rating Collector-Emitter Voltage VCES Em itter-Base Voltage MPSA7S MPSA77 Unit -40 -60 Vdc Vebo -10 Vdc Collector Current — Continuous


    OCR Scan     		PDF MPSA77 00-1K-2K -5K-10K MPSA75

    2SC466

    Abstract: No abstract text available
    Text: P o w e r T r a n s is to r s E-pack Bipolar transistors Type No. E fA J Absolute Maximum Ratings Electrical Characteristics VCEO V e bo Ic Ib Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [•c] C-c] [V ] No. 2SA179S 1790 1876 1877 2SC466& 1 4666 4878 4876 —5


    OCR Scan     		PDF 2SA179S 2SC466& 2SK1861 2SK248Q STO-220 2SC466

    mpsa77

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors P N P Silicon COLLECTOR 3 EMITTER 1 M A X IM U M R A T IN G S Rating Symbol MPSA75 MPSA77 Unit Collector-Emitter Voltage VCES -4 0 -60 Vdc Emitter-Base Voltage v EBO -10 Vdc 'C -500 Ade Pd 625 5.0


    OCR Scan     		PDF MPSA75 MPSA77 5MPSA77

    TIC 136 Transistor

    Abstract: mrf475 tic 136 mrf475 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF475 The RF Line 12 W PEP — 12 W (CW) — 30 MHz NPN SILICON RF POWER TRANSISTOR R F POWER TRANSISTO R . . . designed prim arily for use in single sideband linear amplifier output applications in citizens band and other communications


    OCR Scan     		PDF MRF475 TIC 136 Transistor mrf475 tic 136 mrf475 transistor

    transistor Bc 542

    Abstract: transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A
    Text: 17E 1> • ô'iëO O 'lL 000*155? TELEFUNKEN ELE CTRONIC BUT 56 • BUT 56 A TTilUlFiyjlìSKiìii electronic Cr*ttve Tèehoo*og*s T*-33-f3 Silicon NPN Power Transistors Applications: Switching mode power supply Features: • In multi diffusion technique • Short switching times


    OCR Scan     		PDF 33-r2 a75ttti DIN41 T0126 15A3DIN transistor Bc 542 transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A

    RF640

    Abstract: RF NPN POWER TRANSISTOR 2 GHZ
    Text: MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA The RF Line NPN Silicon RF Power TVansistor The M R F6404 is designed for 1.8 G Hz Personal Communications Network PCN base station applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and


    OCR Scan     		PDF MRF6404 F6404 RF640 RF NPN POWER TRANSISTOR 2 GHZ

    transistor f420

    Abstract: transistor BJ 115 F420 transistor t514 TRANSISTOR ZT 5551 2SK67A transistor bt 667 TCA561 2S30 T010
    Text: NEC j m^Tiytn A Junction Field Effect Transistor 2SK67A E C M 4 > tf- ? > X N-Channel Silicon Ju n ctio n Field Effect Transistor ECM Im pedance C onverter W-mm/ P A C K A G E D IM E N S IO N S o M 'm m t T t o Unit : mm t ItMMTto OECM-i > o Y - h 2 .9 ± 0.2


    OCR Scan     		PDF 2SK67A t11-or-h t1780 transistor f420 transistor BJ 115 F420 transistor t514 TRANSISTOR ZT 5551 2SK67A transistor bt 667 TCA561 2S30 T010

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen­ cies to 520 MHz. The high gain and broadband performance of this device


    OCR Scan     		PDF AN215A, MRF5035. AN721, MRF5035

    2N2659

    Abstract: 2N2660 2N2662 2N2665 2N2664 2N2668 Germanium Transistor Texas Germanium 2N2667 c 2665 transistor
    Text: TYPES 2N2659, 2N2660, 2N2661, 2N2662, 2N2663, 2N2664 2N2665, 2N2666, 2N2667, 2N2668, 2N2669, 2N2670 _P-N-P AUOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS m < * 2 c- 5 ¡1 5 50-, 70», or 9 0 -VOLT UNITS Guaranteed l« x at 85°C ° * 2 15 WATTS at 2 5 'C CASE TEMPERATURE


    OCR Scan     		PDF 2N2659, 2N2660, 2N2661, 2N2662, 2N2663, 2N2664 2N2665, 2N2666, 2N2667, 2N2668, 2N2659 2N2660 2N2662 2N2665 2N2668 Germanium Transistor Texas Germanium 2N2667 c 2665 transistor

    stk4142

    Abstract: No abstract text available
    Text: Ordering number: EN266ÔB Thick Film Hybrid 1C STK4142 II AF Power Amplifier Split Power Supply (25W + 25W min, THD = 0.4%) Package Dimensions Features • The STK4102II series (STK4142II) and STK4101V series (high-grade type) are pin-compatible in the out­


    OCR Scan     		PDF EN266Ã STK4142 STK4102II STK4142II) STK4101V STK4101II STK41421I] DD207S7 STK4142II

    complementary MOSFET 2sk

    Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
    Text: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V


    OCR Scan     		PDF DC12V DC24V DC48V AC100V AC200V 0-60V) 2SJ487 2SK2816 2SJ488 2SJ489 complementary MOSFET 2sk transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR S7E » • 43022^1 GQ2G427 T H H A S File Number 1_PowerTransistors . GE10000-GE10009 15.77 S ilico n N-P-N Darlington Pow er T ra n sisto rs TERM INAL DESIGNATIONS 'c F U N Q E


    OCR Scan     		PDF GQ2G427 GE10000-GE10009 GE10000 GE10009 T0-204AA

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR blE D • MARRIS SEMI CONDUCTOR 43D2271 ÜQMbûEfl ÛÔO « H A S Hf f F A 1f f 1■ 3 0 f # ■ ff Output Clamping, Ultra High-Speed Current Feedback Amplifier Features Description • User Programmable Output Voltage Clamp The HFA1130 is a high speed wideband current feedback amplifier


    OCR Scan     		PDF 43D2271 HFA1130 30MHz) -56dBc 650MHz HFA1130