C 2665 TRANSISTOR Search Results

STK4142II

Abstract: STK4142 ic stk4142 II 1 W stereo amplifier 236W
Contextual Info: Ordering number: EN2665B Thick Film Hybrid IC STK4142II AF Power Amplifier Split Power Supply (25W + 25W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4142II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.

ic stk4142 II

Abstract: STK4142II c 2665 ic stk4142 2665-2 2665-3 pin diagram of ic 4040 resistor fix value STK4101II STK4101V
Contextual Info: Ordering number: EN2665B Thick Film Hybrid IC STK4142II AF Power Amplifier Split Power Supply (25W + 25W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4142II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.

Contextual Info: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Power MOSFET B-pack E-pack STO-220 N-Channel, Enhancement type Absolute Maximum Ratings Tch V dss V gss Id Pt max [ ”C ] [V ] [V ] [A] [w ] [O ] [pF] [pF] [ns] [ns] 2SK1861 150 +20 4 10

Contextual Info: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Absolute Maximum Ratings Type No. Electrica Characteristics VcBO VCEO V ebo Ic Ib Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] fC ] [ t ] -5 -7 -1 .5 2SA1795 1796 - 4 0 1876 -8 0 1877 2SC4668 40

Contextual Info: Surface-Mount Devices Power Transistors w E-pack Bipolar transistors A bsolute M axim um Ratings Type No. 2SA 1795 1796 1876 1877 VcBO VcEO V ebo Ic [V] [V] [V] [A] -6 0 -4 0 -5 -7 -8 0 -8 0 60 40 2SC 4668 -1 -5 -1 .5 100 80 4979 Tj sus (min) [W] [°C] P C ]

2SC460

Contextual Info: P o w e r T r a n s is to r s E-pack Bipolar transistors Type No. E IA J Absolute Maximum Ratings Electrical C haracteristics V cbo VCEO V ebo Ic Ib Pt T stg [V] [V] [V] [A ] [A ] [W] [•c] [•c] Vceo s u s (min) [V] -5 — 7 -1.5 -55 -40 -3 -1 -5 7 -1.5

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors PNP Silicon MPSÄ75 MPSA77 COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Symbol Rating Collector-Emitter Voltage VCES Em itter-Base Voltage MPSA7S MPSA77 Unit -40 -60 Vdc Vebo -10 Vdc Collector Current — Continuous

2SC466

Contextual Info: P o w e r T r a n s is to r s E-pack Bipolar transistors Type No. E fA J Absolute Maximum Ratings Electrical Characteristics VCEO V e bo Ic Ib Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [•c] C-c] [V ] No. 2SA179S 1790 1876 1877 2SC466& 1 4666 4878 4876 —5

mpsa77

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors P N P Silicon COLLECTOR 3 EMITTER 1 M A X IM U M R A T IN G S Rating Symbol MPSA75 MPSA77 Unit Collector-Emitter Voltage VCES -4 0 -60 Vdc Emitter-Base Voltage v EBO -10 Vdc 'C -500 Ade Pd 625 5.0

AGRB10E

Abstract: AGRB10E equivalent JESD22-C101A 1661 mhz
Contextual Info: Preliminary Data Sheet February 2004 AGRB10E 10 W, 1.0 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRB10E (1.0 GHz to 2.7 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS)

AGRB10E

Abstract: JESD22-C101A Inmarsat
Contextual Info: Preliminary Data Sheet January 2004 AGRB10E 10 W, 1.0 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRB10E (1.0 GHz to 2.7 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS)

AGRC10GM

Abstract: JESD22-C101A mosfet 6 ghz z823 1661 mhz
Contextual Info: Preliminary Data Sheet November 2004 AGRC10GM 10 W, 2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRC10GM (1.0 GHz to 2.1 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor

17611

Abstract: 2sc2652 138D 2SA1020 2SA1133
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

TIC 136 Transistor

Abstract: mrf475 tic 136 mrf475 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF475 The RF Line 12 W PEP — 12 W (CW) — 30 MHz NPN SILICON RF POWER TRANSISTOR R F POWER TRANSISTO R . . . designed prim arily for use in single sideband linear amplifier output applications in citizens band and other communications

RF640

Abstract: RF NPN POWER TRANSISTOR 2 GHZ
Contextual Info: MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA The RF Line NPN Silicon RF Power TVansistor The M R F6404 is designed for 1.8 G Hz Personal Communications Network PCN base station applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and

transistor f420

Abstract: transistor BJ 115 F420 transistor t514 TRANSISTOR ZT 5551 2SK67A transistor bt 667 TCA561 2S30 T010
Contextual Info: NEC j m^Tiytn A Junction Field Effect Transistor 2SK67A E C M 4 > tf- ? > X N-Channel Silicon Ju n ctio n Field Effect Transistor ECM Im pedance C onverter W-mm/ P A C K A G E D IM E N S IO N S o M 'm m t T t o Unit : mm t ItMMTto OECM-i > o Y - h 2 .9 ± 0.2

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen­ cies to 520 MHz. The high gain and broadband performance of this device

2N2659

Abstract: 2N2660 2N2662 2N2665 2N2664 2N2668 Germanium Transistor Texas Germanium 2N2667 c 2665 transistor
Contextual Info: TYPES 2N2659, 2N2660, 2N2661, 2N2662, 2N2663, 2N2664 2N2665, 2N2666, 2N2667, 2N2668, 2N2669, 2N2670 _P-N-P AUOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS m < * 2 c- 5 ¡1 5 50-, 70», or 9 0 -VOLT UNITS Guaranteed l« x at 85°C ° * 2 15 WATTS at 2 5 'C CASE TEMPERATURE

stk4142

Contextual Info: Ordering number: EN266ÔB Thick Film Hybrid 1C STK4142 II AF Power Amplifier Split Power Supply (25W + 25W min, THD = 0.4%) Package Dimensions Features • The STK4102II series (STK4142II) and STK4101V series (high-grade type) are pin-compatible in the out­

OPCA-02

Abstract: ABB ACS350 ACS350 FMBA-01 9pin D-connector modbus ACS350 drives ACS350-03X-01A9-4 ACS350-01X-09A8-2 J400 acs-cp-a
Contextual Info: ABB general machinery drives ACS350, 0.37 to 7.5 kW / 0.5 to 10 hp Technical catalogue PROFILE INDUSTRIES PRODUCTS APPLICATIONS EXPERTISE PARTNERS SERVICES ACS350_EN_revC.indd 1 30.6.2006 9:40:15 Two ways to select your drive Choice 1: Simply contact your local ABB drives

complementary MOSFET 2sk

Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Contextual Info: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V

Contextual Info: HARRIS SEMICOND SECTOR S7E » • 43022^1 GQ2G427 T H H A S File Number 1_PowerTransistors . GE10000-GE10009 15.77 S ilico n N-P-N Darlington Pow er T ra n sisto rs TERM INAL DESIGNATIONS 'c F U N Q E

Contextual Info: HARRIS SEMICOND SECTOR blE D • MARRIS SEMI CONDUCTOR 43D2271 ÜQMbûEfl ÛÔO « H A S Hf f F A 1f f 1■ 3 0 f # ■ ff Output Clamping, Ultra High-Speed Current Feedback Amplifier Features Description • User Programmable Output Voltage Clamp The HFA1130 is a high speed wideband current feedback amplifier

OPCA-02

Abstract: 9pin rs232 D-connector wiring diagram 03X-44A0-4 acs-cp-a ACS350-03X-44A0-4 ABB ACS350 ABB ACS 800 ACS350 NOCH-0030-6X OPMP-01
Contextual Info: Catalog ABB general machinery drives ACS350, 0.37 to 22 kW / 0.5 to 30 hp 14412 ACS350_EN_revG_68596106.indd 1 2.4.2009 15:03:20 Two ways to select your drive Choice 1: Simply contact your local ABB drives sales office see page 19 and let them know what