C 2640 RF POWER Search Results

amplifier 2606

Abstract: k 2608 CMT-26-1806 cma 1840 CMA-40-1812 CMT-26-1804 CMT-26-1808 CMT-40-1805 CMT-40-1807 CMT-40-1809
Contextual Info: 18.0 to 40.0 GHz Amplifiers Model IFrequency Response GHz Min Gain (dB) Gain vs Temperature at any Frequency (±dB) Noise Figure (dB) Power Out­ put for 1 dB Compression (+dBm) Gain Flatness vs Freq (±dB) 3rd Order Intercept Point (+dBm) Input (1) DC current

Contextual Info: MASW-010646 Ka-Band High Power Reflective SPDT PIN Switch 26-40 GHz Features •      Rev. V2 Functional Diagram Broadband Performance, 26 to 40 GHz Low Loss: 0.6 dB High Isolation: 32 dB Up to 13 W CW Power, +85°C Die with G-S-G RF Pads and DC Bias Pads

Contextual Info: MASW-010646 Ka-Band High Power Reflective SPDT PIN Switch 26-40 GHz Features •      Rev. V1 Functional Diagram Broadband Performance, 26 to 40 GHz Low Loss: 0.6 dB High Isolation: 32 dB Up to 40 dBm CW Power Die with G-S-G RF Pads and DC Bias Pads

MTL ICC 317

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMZ25333B Rev. 0, 6/2014 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ25333B is a versatile 3-stage power amplifier targeted at driver and pre-driver applications for macro and micro base stations and final-stage

Contextual Info: MASW-011036 Ka-Band High Power Terminated SPDT PIN Switch, 26-40 GHz Features •       Rev. V1 Functional Diagram Broadband Performance, 26 to 40 GHz Low Loss <1 dB High Isolation >38 dB Up to 40 dBm CW Power Die with G-S-G RF Pads and DC Bias Pads

Contextual Info: Preliminary SF2239E • Low-loss RF SAW Filter • Surface-mount 3.0 x 3.0 x 1.3 mm Package • Complies with Directive 2002/95/EC RoHS 2580 MHz SAW Filter Pb Absolute Maximum Ratings Rating Value Units 10 dBm Input Power Level DC Voltage on any Non-ground Terminal

Rogers RO4350B

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMZ25333B Rev. 1, 8/2014 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ25333B is a versatile 3-stage power amplifier targeted at driver and pre-driver applications for macro and micro base stations and final-stage

Contextual Info: Data sheet 2.0 GHz Handheld RF Field Strength Meter Model 2640 Cost effective RF field strength meter with basic spectrum analyzer function The B&K Precision model 2640 is a battery operated, hand-held RF Field Strength Meter capable of measuring RF levels and electric field

AP640R2-00

Abstract: gaas spdt switch ka band mmic pin switch mmic ka T1820
Contextual Info: 26-40 GHz GaAs MMIC SPDT PIN Switch EBAlpha A P 640R 2-00 Chip Outline Features • Broad Bandwidth, 26-40 GHz o ■ Low Loss, <1.1 dB ■ High Isolation, >28 dB ■ Good Return Loss, <-9 dB ■ Fast Switching, <2 ns ■ High Power Handling Capability, 37 dBm

Contextual Info: 26-40 GHz GaAs MMIC SPDT PIN Switch EBAlpha AP640R2-00 Features Chip Outline • Broad Bandwidth, 26-40 GHz ■ Low Loss, <1.1 dB ■ High Isolation, >28 dB ■ Good Return Loss, <-9 dB ■ Fast Switching, <2 ns ■ High Power Handling Capability, 37 dBm Peak, 33 dBm CW

TB0440LW1

Contextual Info: INTEGRATED DUAL-CHANNEL BLOCK CONVERTER MODEL: SYS0216N01R FEATURES • 18–40 GHz frequency coverage integrated aluminum housing The SYS0216N01R is an integrated dual-channel millimeter-wave block converter with internal filtering and LO multipliers. The

Contextual Info: Preliminary Specifications Surface Mount Voltage Controlled Oscillator ISM 2590 - 2640 MHz MLO80100-02615 V1.00 ● ● ● DETAIL A 5.71 Orientation Mark 4.41 1 RF VCC VT 2 3 5.18 ● LCC1 Package Dimensions Miniature Size Surface Mount Package Electrically Shielded

C 2640 rf transistor

Abstract: diode DB 3 C
Contextual Info: jtà i Preliminary Specifications M a n A M P <c o m p a n y Surface Mount Voltage Controlled Oscillator ISM 2590 - 2640 MHz ML080100-02615 V1.00 Features LCC1 Package Dimensions • • • Miniature Size Surface Mount Package Electrically Shielded • •

C0N32

Abstract: NJU6406B
Contextual Info: NJLJ6406B 2 4 - C H A R A C T E R 2 - L I N E D O T M A T R I X LCD C O N T R O L L E R D R I V E R • GENERAL DESCRIPTION PACKAGE OUTLINE The NJU6406B is a 1 Chip Dot Matrix LCD controller dri ver for up to 24-character 2-line display. It contains voltage converter, microprocessor inter­

k 2645 MOSFET

Abstract: K 2645 transistor NIPPON CAPACITORS mosfet j142 100B3R3CP500X A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

k 2645 MOSFET

Abstract: K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

capacitor 1825

Abstract: Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600

K 2645 schematic

Abstract: p 01 k 2645 K 2645 transistor A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600

A114

Abstract: A115 AN1955 JESD22 MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data MRF6S27085H Rev. 0, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

K 2645 schematic circuit

Abstract: DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to

k 2645 MOSFET

Abstract: K 2645 schematic circuit
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

Contextual Info: Ceramic ! NEW High Pass Filter HFCN-2275 2640 to 7000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power Input* • • • • • • 7W max. at 25°C *Passband rating, derate linearly to 3W at 100°C ambient.

HFCN-2275

Abstract: FV1206 HFCN-650
Contextual Info: Ceramic ! NEW High Pass Filter HFCN-2275 2640 to 7000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power Input* • • • • • • 7W max. at 25°C *Passband rating, derate linearly to 3W at 100°C ambient.

HFCN-2275

Contextual Info: Ceramic ! NEW High Pass Filter HFCN-2275 2640 to 7000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power Input • • • • • • 7W* max. *derate linearly to 3W at 100°C ambient. low cost