Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    C 241 TRANSISTOR Search Results

    C 241 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C 241 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    511K14D

    Abstract: walsin 431k10d 561K14D 431K20D 681k10d 102k14E 431K10D 431K05D 431k07d 561K10D
    Text: Table of Contents w w w. p a s s i v e c o m p o n e n t . c o m Metal Oxide Varistor MOV w w w. p a s s i v e c o m p o n e n t . c o m • HOW TO ORDER SR 241 K 10 Type code Varistor Voltage Tolerance Disk Size SR: Walsin Varistor (DC volt) J:+/-5% (From 180 to 112) K:+/-10%


    Original
    18volt 100volt 1000volt 511K14D walsin 431k10d 561K14D 431K20D 681k10d 102k14E 431K10D 431K05D 431k07d 561K10D PDF

    PM4G

    Abstract: zilog z86E08 P4M 7x Iw25 z86d99
    Text: <& 162 <. 41/ .1981.6# ' /+%41%10641.'4 9+6* #0#.1)&+)+6#. %108'46'4 241&7%6 52'%+ +%#6+10 24'.+/+0#4; 25+44 4GXKUKQP  <K.1) 9IRF8WC89 *958QU5RT9RS  ' *5GCFTIH #V9HU9 %5GP69FF %#  69F9PBIH9  (5X  +HT9RH9T BTTPWWW<C.1)7IG


    Original
    9IRF8WC89 958QU5RT9RS 5GP69FF 69F9PBIH9 PM4G zilog z86E08 P4M 7x Iw25 z86d99 PDF

    transistor tt 2170

    Abstract: TT 2170 660 TG 11823 die 660 tg diode transistor t 2180 High power audio transistor equivalent table 241B MSM9140 19652
    Text: MSSI121/241/241B MOSEL VITELIC INSTANT VOICE ROM Features Single power supply can operate at 2.4V through 6V. Current output can drive 8 ohm speaker with a transistor, Vout can drive buzzer directly. The voice content is stored for 7-12 seconds for SI121 13-24 for SI241/241B including mute


    Original
    MSSI121/241/241B SI121 SI241/241B MSM9159 MSM9159B MSSI121/241/241B PID224B transistor tt 2170 TT 2170 660 TG 11823 die 660 tg diode transistor t 2180 High power audio transistor equivalent table 241B MSM9140 19652 PDF

    transistor SD335

    Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
    Text: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen


    Original
    Si-npn-Planar-EpitaxieSC116 Si-npn-Planar-EpitaxieSC117 Si-npn-Planar-EpitaxieSC118 Si-npn-Planar-EpitaxieSC119 Si-npn-Planar-EpitaxieSC236 Si-npn-Planar-EpitaxieSC237 Si-npn-Planar-EpitaxieSC238 VorSC239 Si-pnp-Planar-EpitaxieSC307 Si-pnp-Planar-EpitaxieSC308 transistor SD335 SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 240 BF 241 NPN Silicon RF Transistors • For AM and FM stages • Low feedback capacitance due to shield diffusion • Low output conductance Type Marking Ordering Code BF 240 BF 241 - Q62702-F302 Q62702-F1241 Pin Configuration 2 1 3 E C Package1


    OCR Scan
    Q62702-F302 Q62702-F1241 235b05 DGbb751 PDF

    BO 241 A

    Abstract: bd2410 BD241 TF 241 BD NPN transistors BD - 100 V jc31 241B BD 241 7410
    Text: BD 241, BD 241 A BD 241B. BD 241C NPN SILICON TRANSISTORS, EP ITAXIAL BASE TRANSISTORS NPN SILICIUM. BASE EPITAXIEE Compf. of BO 242, A, B, C P R ELIM INARY DATA NOTICE PRELIMINAIRE - Complementary symetry stages amplifiers /4 5 V I 60 V 180 V *1 0 0 V 3 A


    OCR Scan
    O-220 drawingCB-117on BO 241 A bd2410 BD241 TF 241 BD NPN transistors BD - 100 V jc31 241B BD 241 7410 PDF

    BF241

    Abstract: IC 41 BF bf240 TFK 241 bf 241 Kleine transistor bf UCB 10 Scans-0010445
    Text: BF 240 * BF 241 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: BF 240: G eregelte AM- u. FM -Verstärkerstufen in Em itterschaltung BF 241 : AM- u. FM -Verstärkerstufen in Em itterschaltung Applications: BF 240: C ontrolled AM and FM am p lifier stages in com m on em itter configuration


    OCR Scan
    PDF

    BD242C

    Abstract: BD242 BD242A BD242B bd242 TRANSISTOR
    Text: BD242/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 241/A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol C ollector Em itter Voltage : BD242 Rating Unit - 45 V : BD242A - 60


    OCR Scan
    BD242/A/B/C BD241/A/B/C BD242 BD242A BD242B BD242C BD242C BD242 BD242A BD242B bd242 TRANSISTOR PDF

    BD242A

    Abstract: No abstract text available
    Text: BD242/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 241/A/B/C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector Em itter V oltage : BD242 Rating Unit - 45 V : BD242A - 60


    OCR Scan
    BD242/A/B/C 241/A/B/C BD242 BD242A BD242B BD242C BD242A PDF

    transistor bf 760

    Abstract: transistor bc 241 transistor bf 241 BF241 TRANSISTOR bf241 mosfet bf 66 transistor B 722 transistor bf 237 telefunken ta 400 241 transistor
    Text: TELEFUNKEN ELECTRONIC Ô1C D • öSEGG^b G0DS177 ^ ■ ALGG w * * -—- BF 240 •BF 241 TT id ilFy K lK lK l e le c tro n ic Creative Technologies Silicon NPN Epitaxial Planar Transistors Applications: BF 240: Controlled AM and FM amplifier stages In common emitter configuration


    OCR Scan
    G0DS177 569-GS transistor bf 760 transistor bc 241 transistor bf 241 BF241 TRANSISTOR bf241 mosfet bf 66 transistor B 722 transistor bf 237 telefunken ta 400 241 transistor PDF

    ET 8211

    Abstract: SCHEMA BD242C LI 20 AB bd242
    Text: BD 242, BD 242A BD 242 B, BD 242 C PNP SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS PNP SILIC IU M , BASE E P ITAXIEE Compì, of BO 241, A ,B ,C PRELIM INARY DATA NOTICE P R E LIM IN A IR E • Complementary symetry stages amplifiers 45 V I -6 0 V i —80 V


    OCR Scan
    O-220 drawingCB-117on CB-117 ET 8211 SCHEMA BD242C LI 20 AB bd242 PDF

    Untitled

    Abstract: No abstract text available
    Text: ü ü ü j HARRIS FCT Interface Logic S E M I C O N D U C T O R HARRIS RCA GE C D 54/74FC T240, CD54/74FCT240AT C D 54/74F C T241, CD54/74FCT241 AT C D 54/74FC T244, CD54/74FCT244AT IN TE RSIL July 1990 241 A 24 4 24 0 Octal Buffers/Line Drivers, 3-S tate


    OCR Scan
    54/74FC CD54/74FCT240AT 54/74F CD54/74FCT241 CD54/74FCT244AT CD54/74FCT240, CD54/74FCT240AT CD54/74FCT241, PDF

    74fCT244at

    Abstract: t244 t240 diode t241 diode
    Text: FCT Interface Logic HARRIS S E M I C O N D U C T O R HARRIS RCA GE C D 54/74FC T240, CD54/74FCT240AT C D 54/74F C T241, C D 54/74FCT241AT C D 54/74FC T244, C D 54/74FCT244AT INTERSIL July 1990 241 t 2 4 4 2 4 0 Octal Buffers/Line Drivers, 3-S tate CD54/74FCT240, CD54/74FCT240AT - Inverting


    OCR Scan
    54/74FC CD54/74FCT240AT 54/74F 54/74FCT241AT 54/74FCT244AT CD54/74FCT240, CD54/74FCT241, CD54/74FCT241 74fCT244at t244 t240 diode t241 diode PDF

    2sc458 transistor

    Abstract: HA12413 TRANSISTOR c104 transistor 2SC458 SFE 10.7 MA 2SA1029 2SC458 C104 Q102 2SC458 C,D
    Text: HA1 241 3 F M /A M IF S Y S T E M The H IT A C H I Typical HA12413 applications is an include IC for FM /A M IF system. cassette radios and modular stereos, functioning and featuring as follows. • FUNCTIONS FM • IF A m plilfier {W ith C .F. is inserted between the stages


    OCR Scan
    HA12413 HA12413 DP-16) -45dB -10dBju) To--40 35kHz 2sc458 transistor TRANSISTOR c104 transistor 2SC458 SFE 10.7 MA 2SA1029 2SC458 C104 Q102 2SC458 C,D PDF

    transistor b941

    Abstract: B941 transistor 39 77 marking zener diode, sot323 or sot89 B941 marking codes IC sot-223 marking sot223 GY CEN526 marking code maxim label transistor gy sot-23 transistor gy sot-223
    Text: E n g in e e r in g S p e c if ic a t io n s Page Axial Lead Tape and Reel 228 TO-92 Tape and Reel 230 TO-92 Ammopack 233 DO-35 Radial Tape and Reel 236 DO-41 SP Radial Tape and Reel 239 Standard Packing Quantity 241 Package Labeling 243 Bar Code Labeling


    OCR Scan
    DO-35 DO-41 EIA-296-E. OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 transistor b941 B941 transistor 39 77 marking zener diode, sot323 or sot89 B941 marking codes IC sot-223 marking sot223 GY CEN526 marking code maxim label transistor gy sot-23 transistor gy sot-223 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AflER P H IL IP S / D IS C R E T E - ^ 5 3 ^ 3 1 2SE D O D l^ S A 1 • BD 241; BD 241A B D 241B ; BD 241C T - 23-// S IL IC O N E P IT A X IA L B A S E P O W E R T R A N S IS T O R S N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages, general amplifier


    OCR Scan
    BD242; BD241 BD241; BD241A BD241B; BD241C bbS3131 bb53T31 PDF

    BF241

    Abstract: BF240 K241 BF 225 transistors bf CB-76on Transistors 1hz
    Text: N P N S IL IC O N T R A N S IS T O R S , E P IT A X IA L P L A N A R BF 241 T R A N S IS T O R S N P N S IL IC IU M , P L A N A R E P IT A X IA U X BF 240 and BF 241 transistors are intended fo r use in AM-FM if amplifiers o f radio receivers. Les transistors B F 240, B F 241 sont destinés aux am plifica­


    OCR Scan
    -c12e CB-76 BF241 BF240 K241 BF 225 transistors bf CB-76on Transistors 1hz PDF

    transistor bd 202

    Abstract: transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711
    Text: TOP-3 general purpose transistor selector guide guide de sélection transistors TOP-3 usage général y TH O M SO N -CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


    OCR Scan
    T0-220AB O-220AB 5-40V BD710 CB-244 transistor bd 202 transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711 PDF

    BDX 241

    Abstract: transistor 304 transistor bd 242 transistor 3055 2N3055 transistor BD 249 transistor BD 140 BD 140 transistor transistor 2N 3055 bd 3055
    Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TOP-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


    OCR Scan
    T0-220AB O-220AB 5-40V BD710 BDX 241 transistor 304 transistor bd 242 transistor 3055 2N3055 transistor BD 249 transistor BD 140 BD 140 transistor transistor 2N 3055 bd 3055 PDF

    Untitled

    Abstract: No abstract text available
    Text: MSSI121/241/241B M O S E L V IT E L IC INSTANT VOICE ROM Features • Single power supply can operate at 2.4V through 6V. ■ Current output can drive 8 ohm speaker with a transistor, Vout can drive buzzer directly. ■ The voice content is stored for 7-12 seconds for


    OCR Scan
    MSSI121/241/241B SI121 SI241/241B MSM9159 MSM9159B MSSI121/241/241B PID224B PDF

    BD 139 140

    Abstract: bo 135 BD NPN transistors bo 139 BO 829 B0707 b0709 BD304 B0907 CB-117
    Text: plastic power transistors c transistors de puissance plastiques THOMSON-CSF Type v CEO •c Ptot h 2iE / 1C VCE sat / >C / >B NPN | min PNP (V) (A) max (W) max (V) (A) I | (A) (A) high speed transistors 2N 5296 *s tf *t typ* max max max M (ws ) min (M Hz)


    OCR Scan
    O-I26 CB-16 /TO-202 CB-203 CB-244 BD 139 140 bo 135 BD NPN transistors bo 139 BO 829 B0707 b0709 BD304 B0907 CB-117 PDF

    241A

    Abstract: 241B BD241 BD241A BD241B BD NPN transistors 312c
    Text: vi BD 241 • BD 241A ■ BD 241B NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO ELECTRONICS CASE T0-220B THE BD 241, BD 241A AND B D '241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241,


    OCR Scan
    T0-220B Tc425Â BD241 BD241A BD241B -3-S93363, 241A 241B BD NPN transistors 312c PDF

    BDX 241

    Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
    Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


    OCR Scan
    T0-220AB O-220AB 5-40V BD710 CB-19 BDX 241 BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905 PDF

    BO241C

    Abstract: BO 241 A bo 135 transistor ESM 30 LF amplifier 2N2197 2N2196 bc 303 transistor ESM 304 100 bd 135
    Text: N PN Power transistors « Epitaxial Base » L F amplifier and switching » Transistors de puissance « Base épitaxiée » Amplification et commutation B F Type Compì. Case Boîtier Ptot W VcEO (V) *C (A) *21 E max min / 'C 1 (A) Tease 25 0 C iiC V c E sa t


    OCR Scan
    TPu75 O-126 BD138 BO241C BO 241 A bo 135 transistor ESM 30 LF amplifier 2N2197 2N2196 bc 303 transistor ESM 304 100 bd 135 PDF