C 2026 AMPLIFIER Search Results

transistor 9682

Contextual Info: What mLlÍM HEW LETT PACKARD Avantek Products Thin-Film Cascadable Amplifier 10 to 2000 MHz Technical Data UTO/ÜTC 2026 Series Features • Frequency Range: 10 to 2000 MHz • High Output Power: +20.5 dBm Typ • Medium Gain: 15.0 dB (Typ) • Temperature Compensated

UTC-2026

Contextual Info: UTO/UTC 2026 Series Thin-Film Cascadable Amplifier 10 to 2000 MHz 0AVANTEK FEATURES APPLICATIONS • Frequency Range: 10 to 2000 MHz • High Output Power: +19.0 dBm Typ • Medium Gain: 15.0 dB (Typ) • Temperature Compensated • High Reverse Isolation

Contextual Info: What IL'tíM HEWLETT PACKARD Avantek Products Thin-Film Cascadable Amplifier 10 to 2000 MHz Technical Data UTO/UTC 2026 Series Features • Frequency Range: 10 to 2000 MHz • High Output Power: +20.5 dBm Typ • Medium Gain: 15.0 dB (Typ) • Temperature Compensated

transistor a338

Abstract: a1792 transistor A347
Contextual Info: Thin-Film Cascadable Amplifier 10 to 2000 MHz Technical Data UTO/UTC 2026 Series Features Description Pin Configuration • Frequency Range: 10 to 2000 MHz The 2026 Series is a two-stage thin-film bipolar RF amplifier using resistive feedback and active bias for temperature

AVANTEK uto

Abstract: Avantek mixer 18 ghz active
Contextual Info: H Avantek Products Thin-Film Cascadable Amplifier 10 to 2000 MHz Technical Data UTO/UTC 2026 Series Features Description Pin Configuration • Frequency Range: 10 to 2000␣MHz The 2026 Series is a two-stage thin-film bipolar RF amplifier using resistive feedback and

Contextual Info: Thin-Film Cascadable Amplifier 10 to 2000 MHz Technical Data UTO/UTC 2026 Series Features Description Pin Configuration • Frequency Range: 10 to 2000 MHz The 2026 Series is a two-stage thin-film bipolar RF amplifier using resistive feedback and active bias for temperature

TEA1098a for Application

Contextual Info: UTC TEA1098A LINEAR INTEGRATED CIRCUIT SPEECH AND HANDSFREE DESCRIPTION The UTC TEA1098A is an analog bipolar circuit dedicated for telephony applications. It includes a line interface, handset HS microphone and earpiece amplifiers, handsfree (HF) microphone and loudspeaker amplifiers and a duplex

esm740

Abstract: ESM 740 CSB 503 TEA 2029 A transistor c 2026 7 pin SMPS ESM thyristor TEA2029A 3 phase smps circuit diagram c 2026 y transistor
Contextual Info: YISUSPtlDWlKlIN! electronic TEA 2026 CV «TEA 2029 CV Creative Technologies TIMING PROCESSOR LINE, FRAME, SMPS FOR TV SETS o Technology: I L Bipolar Features: o 500 kHz VCO and appropriate logic avoids adjustment of timing pulses o Low power dissipation by controlling

ifr 2026 service manual

Abstract: electromagnetic pulse generator kit 2.4 ghz FM RECEIVER CIRCUIT DIAGRAM fsk modulation using 555 480 MHz generator Analog Multiplier for am modulation fsk to RS-232 converter EN50082-1 EN61010-1
Contextual Info: 10 kHz to 2.4 GHz MultiSource Generator Signal Generators 2026 Up to three fully functional signal generators in one unit offering a unique solution for complex tests on receivers, components and systems Two or three high quality RF signal generators in a space efficient

Contextual Info: 2SA1213 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR PNP SOT-89 FEATURES z z z z Small Flat Package Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time z Pb-Free package is available RoHS product for packing code suffix "G"

Contextual Info: NPN GENERAL PURPOSE DUAL TRANSISTOR VOLTAGE 45 Volts POWER 150 mWatts FEATURES • General purpose amplifier applications • PNP epitaxial silicon, planar design • MECHANICAL DATA • Case: SOT-363, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026

Contextual Info: BC857BS PNP GENERAL PURPOSE DUALTRANSISTORS VOLTAGE 45 Volts POWER 150 mWatts FEATURES • General purpose amplifier applications 0.087 2.20 0.074(1.90) • NPN epitaxial silicon, planar design 0.010(0.25) 0.054(1.35) 0.045(1.15) 0.030(0.75) 0.021(0.55) MECHANICAL DATA

Contextual Info: BC847CS/BC857CS GENERAL PURPOSE TRANSISTORS 45 Volts VOLTAGE POWER 150 mW FEATURES • General Purpose Amplifier Applications • Collector Current IC = -100mA • MECHANICAL DATA Case: SOT-363 Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.006 grams

Contextual Info: BC847BFN3 NPN GENERAL PURPOSE TRANSISTORS 45 Volts 250 mWatts Unit：inch mm DFN 3L 0.042(1.05) 0.037(0.95) FEATURES 0.026(0.65) 0.022(0.55) • General purpose amplifier applications • NPN epitaxial silicon, planar design 0.022(0.55) 0.017(0.45) • Collector current IC = 100mA

TRANSISTOR C 2026

Abstract: 2SB817E 2SB817e equivalent AH TRANSISTOR transistor PNP how to test transistor transistor 1503 mexico transistor power 2sb817
Contextual Info: Power Transistor PNP 2SB817E Power Transistor (PNP) Features • 2SB817E transistor is designed for use in general purpose power amplifier, application TO-3P Mechanical Data Case: TO-3P, Plastic Package Terminals: Weight: Plated leads solderable per MIL-STD-750, Method 2026

TN3055

Abstract: tm3055
Contextual Info: RF AMPLIFIER MODEL TM3055 Available as: Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +47 dBm Typ. Second Order Two Tone Intercept Point . +42 dBm (Typ.) Third Order Two Tone Intercept Point . +29 dBm (Typ.)

BC807

Abstract: BC807-16 BC807-25 BC807-40
Contextual Info: BC807 SERIES PNP GENERAL PURPOSE TRANSISTORS POWER 45 Volts VOLTAGE SOT- 23 225 mWatts Unit: inch mm FEATURES • General purpose amplifier applications .103(2.60) .056(1.40) .047(1.20) • Collector current I C = 500mA • In compliance with EU RoHS 2002/95/EC directives

Contextual Info: BC807 SERIES PNP GENERAL PURPOSE TRANSISTORS POWER 330 mWatts FEATURES 0.120 3.04 • General purpose amplifier applications 0.110(2.80) • PNP epitaxial silicon, planar design • Collector current I C = 500mA • In compliance with EU RoHS 2002/95/EC directives

BC817

Abstract: BC817-16 BC817-25 BC817-40 EB-500
Contextual Info: DATA SHEET BC817 SERIES NPN GENERAL PURPOSE TRANSISTORS POWER 45 Volts VOLTAGE SOT- 23 300 mWatts Unit: inch mm FEATURES • General purpose amplifier applications .103(2.60) .056(1.40) .047(1.20) • Collector current I C = 500mA • In compliance with EU RoHS 2002/95/EC directives

102009

Abstract: PNP POWER TRANSISTOR SOT23-6L e50u
Contextual Info: IMZ2A COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS VOLTAGE 50 Volts POWER 300mW FEATURES • PNP/ NPN epitaxial silicon, planar design • Collector-emitter voltage VCE=50V • Collector current IC=150mA • In compliance with EU RoHS 2002/95/EC directives

I 6506

Abstract: 5091-8326E HRS108
Contextual Info: Silicon Bipolar Monilithic Amplifiers Reliability Data MSA Series Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-750. Data was gathered from the

Contextual Info: BC817 SERIES NPN GENERAL PURPOSE TRANSISTORS POWER 330 mW FEATURES • General purpose amplifier applications 0.120 3.04 • NPN epitaxial silicon, planar design 0.110(2.80) • Collector current IC = 500mA • In compliance with EU RoHS 2002/95/EC directives

7A PNP POWER TRANSISTOR "SOT23"

Contextual Info: BC807 SERIES 45 Volts VOLTAGE POWER SOT-23 330 mWatts Unit：inch mm • General purpose amplifier applications 0.120(3.04) • PNP epitaxial silicon, planar design 0.110(2.80) 0.006(0.15)MIN. FEATURES 0.103(2.60) • Collector current I C = 500mA • Lead free in comply with EU RoHS 2002/95/EC directives.

sot23 marking tr1

Abstract: MARKING SOT23 tr2 E50U PNP POWER TRANSISTOR SOT23-6L transistor TR1 sot23
Contextual Info: IMZ2A COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS VOLTAGE 50 Volts POWER SOT23-6L 300mW Unit：inch mm FEATURES • PNP/ NPN epitaxial silicon, planar design • Collector-emitter voltage VCE=50V • Collector current IC=150mA • Lead free in comply with EU RoHS 2002/95/EC directives.