C 1685 TRANSISTOR Search Results

UU15

Abstract: tic 260 PH1617-60 "Power TRANSISTOR"
Contextual Info: PH1617-60 M/A-OOM Wireless Power Transistor 60 Watts, 1615- 1685 MHz = & Microwave Products Outline Drawing1 Description M/A-COM’s PH1617-60 is a silicon bipolar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1615 to 1685 MHz range. This

c 1685 transistor

Abstract: 1685 transistor transistor c 1685 1615mhz PH1617-60
Contextual Info: Wireless Power Transistor, 60 Watts, 1615 - 1685 MHz PH1617-60 PH1617-60 Wireless Power Transistor 60 Watts, 1615 - 1685 MHz 1 Features • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Emitter Configuration Diffused Emitter Ballasting Resistors

SY10EP51V

Abstract: SY10EP51VKI SY10EP51VKITR SY10EP51VZI SY10EP51VZITR
Contextual Info: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK FEATURES • ■ ■ ■ ■ ■ SY10EP51V FINAL DESCRIPTION 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143

Contextual Info: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK SY10EP51V FINAL FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143

Contextual Info: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK FEATURES • ■ ■ ■ ■ ■ SY10EP51V DESCRIPTION 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143

Contextual Info: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK ECL Pro SY10EP51V FINAL FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143

transistor to1a

Abstract: to1a to1a transistor WS7805 15A Voltage Regulators to18v WS7805CV WS7805DP
Contextual Info: POSITIVE-VOLTAGE REGULATORS WS7805 ! 3-Termainal Regulators TO-252 ! Output Current Up to 1.5 A WS7805DP ! No External Components ! Internal Thermal Overload Protection ! High Power Dissipation Capability ! Internal Shot-Circuit Current Limiting ! Output Transistor Safe-Area

KPT24

Abstract: MC100EPT24 MC100EPT24D MC100EPT24DR2
Contextual Info: MC100EPT24 LVTTL/LVCMOS to Differential LVECL Translator The MC100EPT24 is a LVTTL/LVCMOS to differential LVECL translator. Because LVECL levels and LVTTL/LVCMOS levels are used, a –3.3V, +3.3V and ground are required. The small outline 8–lead SOIC package and the single gate of the EPT24 makes it ideal

2SD444

Contextual Info: I O rd e rin g n u m b e r EN 3200 iSA%YO 2SA1685/2SC4443 No.3200 PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications Features • Fast switching speed • High gain-bandwidth product • Low saturation voltage : 2SA1685 A bsolute M axim um R atings at Ta = 25°C

2SD444

Abstract: 08TI 2SA1685 2SC4443 C4443 M685
Contextual Info: O rd e rin g n u m b e r: EN 3200 2SA1685/2SC4443 No.3200 SMIYO PNP/NPN Epitaxial Planar Silicon Transistors i High-Speed Switching Applications F e a tu re s • Fast switching speed • High gain-bandwidth product •Low saturation voltage : 2SA1685

Contextual Info: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration

2SC5187

Abstract: 2SA1936 TRANSISTORS SANYO SC3392 2sc2960 a-y
Contextual Info: SAfÜYO H IG H -SPEED SW ITCHING A P P L I C A T I O N S Small Signal Transistors] Features ♦ ♦ ♦ ♦ SANYO:SMCP Case Outlines (unit^mm -0J High switching speed High breakdown voltage Low collector saturation voltage Very small-sized package permitting a set to be made smaller

XNOR GATE

Abstract: data sheet for 3 input xor gate HP08 SY10EP08V SY10EP08VKI SY10EP08VKITR SY10EP08VZI SY10EP08VZITR
Contextual Info: 5V/3.3V DIFFERENTIAL 2-INPUT XOR/XNOR FEATURES SY10EP08V FINAL DESCRIPTION • ■ ■ ■ 3.3V or 5V power supply options Maximum frequency > 3GHz typical 200ps typical propagation delay Internal input resistors: pulldown on D, pulldown and pullup on /D ■ Q output will default LOW with inputs open or at VEE

Contextual Info: 5V/3.3V DIFFERENTIAL 2-INPUT XOR/XNOR FEATURES SY10EP08V DESCRIPTION • ■ ■ ■ 3.3V or 5V power supply options Maximum frequency > 3GHz typical 200ps typical propagation delay Internal input resistors: pulldown on D, pulldown and pullup on /D ■ Q output will default LOW with inputs open or at VEE

SY10EP05V

Abstract: SY10EP05VKI SY10EP05VKITR SY10EP05VZI SY10EP05VZITR HP05
Contextual Info: 5V/3.3V DIFFERENTIAL AND/NAND FEATURES SY10EP05V FINAL DESCRIPTION • ■ ■ ■ 3.3V or 5V power supply options 180ps typical propagation delay Maximum frequency >3GHz typical Internal input resistors: pulldown on D, pulldown and pullup on /D ■ Q output will default LOW with inputs open or at VEE

k8 marking transistor

Abstract: HP05
Contextual Info: 5V/3.3V DIFFERENTIAL AND/NAND SY10EP05V FINAL FEATURES • ■ ■ ■ 3.3V or 5V power supply options 180ps typical propagation delay Maximum frequency >3GHz typical Internal input resistors: pulldown on D, pulldown and pullup on /D ■ Q output will default LOW with inputs open or at VEE

Contextual Info: MOTOROLA Order this document by MC10EP33/D SEM ICONDUCTO R TECHNICAL DATA Product Preview ~ M C 10EP33 4 D ivider The MC10EP33 is an integrated + 4 divider. The differential clock inputs and the V b b allow a differential, single-ended or AC coupled interface to the device. If used, the V b b output should be bypassed to

Contextual Info: 5V/3.3V DIFFERENTIAL 2-INPUT XOR/XNOR SY10EP08V FINAL FEATURES • ■ ■ ■ 3.3V or 5V power supply options Maximum frequency > 3GHz typical 200ps typical propagation delay Internal input resistors: pulldown on D, pulldown and pullup on /D ■ Q output will default LOW with inputs open or at VEE

Contextual Info: 5V/3.3V DIFFERENTIAL AND/NAND FEATURES SY10EP05V DESCRIPTION • ■ ■ ■ 3.3V or 5V power supply options 180ps typical propagation delay Maximum frequency >3GHz typical Internal input resistors: pulldown on D, pulldown and pullup on /D ■ Q output will default LOW with inputs open or at VEE

D773

Abstract: b 58115 T73C SGSD00042 sgsp472 CECLA npn 1000V 100a SGSD00044 npn transistors 700V 1A
Contextual Info: S G S-THOMSON D7E D | 7cI2i:i237 QD1Ô74T 1 | 73C VÎK S G S d K ì r i 1 8 7 78 D MULTIEPITAXIAL MESA HOLLOW EMITTER NPN „ 1 ADVANCE DATA HIGH V O L T A G E F A S T SW ITCHING POW ER T R A N S I S T O R S The S G SD 0 00 4 2 and S G SD 0 0 04 4 are m ultiepjtaxial mesa h ollow em itter N PN transistors

HEP05V

Contextual Info: 5V/3.3V DIFFERENTIAL AND/NAND ECL Pro SY10EP05V FINAL FEATURES • ■ ■ ■ 3.3V or 5V power supply options 180ps typical propagation delay Maximum frequency >3GHz typical Internal input resistors: pulldown on D, pulldown and pullup on /D ■ Q output will default LOW with inputs open or at VEE

Contextual Info: ECL Pro SY10EP08V FINAL 5V/3.3V DIFFERENTIAL 2-INPUT XOR/XNOR FEATURES • ■ ■ ■ 3.3V or 5V power supply options Maximum frequency > 3GHz typical 200ps typical propagation delay Internal input resistors: pulldown on D, pulldown and pullup on /D ■ Q output will default LOW with inputs open or at VEE

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES • • • • • • PHP130N03LT, PHB130N03LT SYMBOL ’Trench’ technology Very low on-state resistance Fast switching Stable off-state characteristics High thermal cycling performance

transistor k81

Contextual Info: ECL Pro ECLSY10EP08V Pro™ SY10EP08V FINAL 5V/3.3V DIFFERENTIAL 2-INPUT XOR/XNOR Micrel FEATURES • ■ ■ ■ 3.3V or 5V power supply options Maximum frequency > 3GHz typical 200ps typical propagation delay Internal input resistors: pulldown on D, pulldown