C 114 TRANSISTOR Search Results

Contextual Info: Transistors Digital transistors built-in resistors D T C 114 E E / D T C 114 E U A / D T C 1 14 E K A D T C 114 E C A / D T C 114 E S A •F e a tu re s 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

Contextual Info: 47 SILICON POWER TRANSISTORS S A T U R A T IO N V O L T A G E S C U R R E N T G A IN <9> T YPE N U M BER CASE T YPE V V C EO C B O V V 1 90 AMP SILICON PNP SDT3623 SDT3920 SDT3921 TO-68 TO-114 TO-114 140 80 100 SDT3922 SDT3923 TO-114 TO-114 120 140 V E BO

DTC114TS

Contextual Info: V~P>V DTC114TU/DTC114TK/DTC114TS/DTC114TF DTC114TL/DTC114TA/DTC114TV / T ransistors D TC 114 T U /D T C 114 T K /D T C 114TS DTC114T F /D T C 114T L /D T C 114TA D TC 114TV h 7 > y ^ ^ ‘i "J •^■/Transistor Switch Digital Transistors Includes Resistors

Contextual Info: hz7>y'Z$ /'Transistors DTC114TE/DTC114TUA/DTC114TKA D T C 1 14 T E /D T C 114 T U A /D T C 114 T K A Digital Transistors Includes Resistors h ' 7 > y X 5 t Z . ' f ' y ^-/Transistor Switch • • ^}f?^j-^0 /Dimensions (Unit : mm) w ä 1) A - f », A t t W c m ft liim t i: U T O

IC2500

Abstract: FZ 800 R 12 KF6
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1600 R 17 KF6 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be done 06.04.1998

IGBT module FZ 1200

Abstract: FZ 800 R 12 KF6
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 17 KF6 61,5 18 M8 screwing depth max. 16 screwing depth max. 8 130 31,5 114 C C E E E G C 16,5 M4 28 2,5 7 18,5 external connections to be done C C C E E G E 12.06.1998

MJ 800

Abstract: fz 79 1500 mj800 IGBT module FZ 1200 R 17 KF6 C IGBT 1200A IGBT module FZ 1200 FZ 800 R 12 KF6
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 17 KF6 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be done 07.04.1998

FZ1200R12KF4

Abstract: ic 7800 fz 1200 r12 kf 4 KF 35 transistor IGBT module FZ 1200 fz 1000 r12 kf 4
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 1200 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997

FZ800R12KF4

Abstract: 800A DC diode IGBT FZ 1600 r12 kf4 fZ80
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be

eupec FZ 800 R 16

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997

IGBT FZ 1200 r12

Abstract: FZ800R12KF4 fz 1200 r12 kf 4 1G18
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be

6ka transistor

Abstract: IGBT 1500 ic 7800 R17KF4
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 17 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997

IGBT 1500

Abstract: der FZ 1600 R 12 KF4 ic 7800 IGBT module FZ 1200
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997

TRANSISTOR TC 100

Abstract: IGBT FZ 800
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 17 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997

ic 7800

Abstract: 16KF4
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997

IGBT FZ 1600 r12 kf4

Abstract: FZ800R12KF4 4kA IGBT IGBT module FZ 600 R12 G1 TRANSISTOR IGBT FZ 600 R12
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997

FZ800R12KF4

Abstract: IGBT FZ 1200 r12 IGBT module FZ 600 R12 IGBT FZ 600 R12 G1 TRANSISTOR 800R12KF4 IGBT FZ 1600 r12 kf4 IGBT FZ 200
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be

IC 7800

Abstract: IGBT FZ 1200 r12 FZ1200R12KF4 fz1200r12
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 1200 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be

FZ1200R12KF4

Abstract: IGBT FZ 1200 r12 fz 1000 r12 kf 4 70nH IC 7800 FZ1200R12KF fz 1200 r12 kf 4 eupec FZ 50 A 12 KF
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 1200 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be

IGBT FZ 600 R12

Abstract: FZ1200R12KF4 IGBT FZ 1200 r12
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 1200 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be

IGBT 1500

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997