C 1006 TRANSISTOR Search Results

MOC1005

Abstract: MOC1006 VQE 24 led VDE0113 VDE0160 VDE0832 VDE0833 transistor J5X
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC1005 M O C 1006 6-P in D IP O p to is o la to rs Transistor O utput These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • •

ic 1006

Abstract: RN1003 RN1001 RN1002 RN1004 RN1005 RN1006 RN2001 RN2006
Contextual Info: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design

RN1001

Abstract: RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006
Contextual Info: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design

Contextual Info: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design

Contextual Info: CGD1042L 1 GHz, 23 dB gain GaAs low current power doubler Rev. 1 — 10 March 2014 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115AE package, operating at a supply voltage of 24 V Direct Current DC , employing Heterojunction Field Effect Transistor (HFET) GaAs dies.

transistor A 1006

Abstract: TRANSISTOR 100-6 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006
Contextual Info: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design

TRANSISTOR 100-6

Abstract: transistor A 1006 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006
Contextual Info: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design

transistor A 1006

Abstract: RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006 22 1006
Contextual Info: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design

TPC8204

Contextual Info: TOSHIBA TPC8204 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8204 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8. Low Drain-Source ON Resistance : RßS (ON) = 16

sod87 Melf

Abstract: SOD882 1N5817 MELF 1PS74SB43 1PS59SB10 1n5819 melf 1PS76SB62 1PS76SB21 BAS70 MELF SOD532
Contextual Info: Schottky diodes Selection guide With over 13% market share in terms of quantity, Philips is among the top five worldwide suppliers of small signal diodes and transistors.We offer a very broad portfolio – from conventional leaded products to the latest ultra-small lead-free

Contextual Info: TOSHIBA TPCS8102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSH T P C S 8 1 02 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS

HN1L03FU

Contextual Info: TOSHIBA HN1L03FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-P CHANNEL MOS TYPE H N 1 L03FU HIGH SPEED SWITCHING APPLICATIONS U nit in mm ANAROG SWITCH APPLICATIONS 2.1 ± 0.1 Q l, Q2 COMMON • Low Threshold Voltage Q l : V th = 0 .8 -2 .5 V 1.25 ± 0.1 6 P

Contextual Info: TOSHIBA TPCS8101 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSH T P C S 8 1 01 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm TSSOP-8 HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS

Contextual Info: TOSHIBA TPC8303 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII TPC8303 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8 Low Drain-Source ON Resistance : RßS (ON) = 27 mH (Typ.)

HN4K03JU

Abstract: S-25
Contextual Info: TOSHIBA HN4K03JU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HN4K03JU Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS High Input Impedance Low Gate Threshold Voltage : V^h = 0.5—1.5 V Excellent Switching Times Small Package

tpc8101

Abstract: TPCS8101 tpc81
Contextual Info: TOSHIBA TPCS8101 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U -M O SÏÏ T P C S 8 1 01 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm TSSOP-8 HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS

Contextual Info: HN1L03FU TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-P CHANNEL MOS TYPE HN1L03FU HIGH SPEED SWITCHING APPLICATIONS U nit in mm ANAROG SWITCH APPLICATIONS Q l, Q2 COMMON • Low Threshold Voltage Q l : Vth = 0 .8 -2 .5 V Q2 : Vth = - 0 . 5 ~ - l . 5 V

Contextual Info: TOSHIBA TPC8204 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8204 LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS SOP-8, 8 5 n n n n Low Drain-Source ON Resistance

2sd1008

Abstract: 2SD 388 A
Contextual Info: SILICON TRANSISTORS 2SD1 006,2SD1007 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1006 and 2SD1007 are designed fo r audio frequency pow er a m p lifie r a pp lica tion, especially in H y b rid Integrated Circuits. FEATURES • W orld Standard M iniatu re Package : SO T —89

2ssm

Abstract: TPCS8102
Contextual Info: TOSHIBA TPCS8102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U -M O SÏÏ T P C S 8 1 02 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS

HN1K03FU

Abstract: N1K03
Contextual Info: HN1K03FU TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE H N 1 K03FU HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCH APPLICATIONS. U nit in mm 2.1 ± 0.1 1.25 ± 0.1 • High Input Impedance 6 P • Low Gate Threshold Voltage Vth = 0 .5 - 1 .5 V

Contextual Info: EC3H07B NPN Epitaxial Planar Type Silicon Transistor For VHF band low-noise Amp and Oscillation Preliminary specifications TENTATIVE Features and applications • Low noise : NF=1.5dB typ f=2GHz • High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V)

3SK238

Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

HITACHI SMD TRANSISTORS

Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,