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Text: SK75GD126T =' U BT VIA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT QI:9 =W U BT VI <I =W U @TY VI <I¥; SEMITOP 4 IGBT Module .5'( @BYY Q SS J =' U ZY VI [Z J @OY J ] BY Q =W U @BT VI @Y a' =' U BT VI b@ J =' U ZY VI [S J @TY
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SK75GD126T
c9-00&
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IBGT
Abstract: byy 62 hb baz tbaz 3307
Text: 42*+|+{42*+|+. 293z6.7: /98=;9661; 2DAPQNDO u McXV\T_ \agXZeTgX V\eVh\g. ZbbW cXeYbe`TaVX u McXV\T_ [\Z[/cXeYbe`TaVX VbagTVgf. h_geT/_baZ X_XVge\VT_ XaWheTaVX u MheYTVX `bhag\aZ gXV[ab_bZk. TWiTaVXW VeTYgjbe^ u Mb_\W UTfX WXf\Za. fgTU_X fgehVgheX =SLGBAH .LLHGBAPGKJO
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293z6
DB5727
DB5727=
DB57271DB5727=
3507P@
IBGT
byy 62
hb baz
tbaz
3307
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Untitled
Abstract: No abstract text available
Text: FHL@?M * <K8C , O@;< 0 <D @: FE;L: KFI$ @<C; # =<: K1I8EJ@JKFI !FFC* , 0 ! 3 !FFC* , 0 X ! - FN<I1I8EJ@JKFI '- 4 / ! " 8K8 0 ?<<K / <M $ @E8C 'E;LJKI@8C * LCK@D 8IB<K + <<9 # % F & < C2> >.;?6?@< >
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Untitled
Abstract: No abstract text available
Text: FHL@?M *<K8C,O@;<0<D@:FE;L:KFI$@<C;#=<:K1I8EJ@JKFI ! FFC * , 0 ! 3!FFC*,0X!-FN<I1I8EJ@JKFI '-4/! " 8K 8 0 ?<<K /<M $@E8C ' E;LJ K I@ 8C * LC K @ D 8IB <K +<<9#% F&<C2> >.;?6?@<>
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Untitled
Abstract: No abstract text available
Text: GHL@?M + <K8C , O@;< 0 <D @: FE;L: KFI$ @<C; # =<: K1I8EJ@JKFI !FFC+ , 0 ! 3 !FFC+ , 0 X ! - FN<I1I8EJ@JKFI '- " / ! " 8K8 0 ?<<K / <M $ @E8C 'E;LJKI@8C + LCK@D 8IB<K + <<9 # % F & < C2> )>.;?6?@< > (
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Untitled
Abstract: No abstract text available
Text: GHL@?M + <K8C , O@;< 0 <D @: FE;L: KFI$ @<C; # =<: K1I8EJ@JKFI !FFC+ , 0 ! 3 !FFC+ , 0 X ! - FN<I1I8EJ@JKFI '- " / ! " 8K8 0 ?<<K / <M $ @E8C 'E;LJKI@8C + LCK@D 8IB<K + <<9 # % F & < C2> )>.;?6?@< > (
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Untitled
Abstract: No abstract text available
Text: FHL@?M *<K8C,O@;<0<D@:FE;L:KFI$@<C;#=<:K1I8EJ@JKFI ! FFC * , 0 ! 3!FFC*,0X!-FN<I1I8EJ@JKFI '-4/! " 8K 8 0 ?<<K /<M $@E8C ' E;LJ K I@ 8C * LC K @ D 8IB <K +<<9#% F&<C2> >.;?6?@<>
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Untitled
Abstract: No abstract text available
Text: GHL@?M +<K8C,O@;<0<D@:FE;L:KFI$@<C;#=<:K1I8EJ@JKFI ! FFC + , 0 ! 3!FFC+,0X!-FN<I1I8EJ@JKFI '-"/ ! " 8K 8 0 ?<<K /<M $@E8C ' E;LJ K I@ 8C + LC K @ D 8IB <K +<<9#% F&<C2>)>.;?6?@<>
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Untitled
Abstract: No abstract text available
Text: FHL@?M * <K8C , O@;< 0 <D @: FE;L: KFI$ @<C; # =<: K1I8EJ@JKFI !FFC* , 0 ! 3 !FFC* , 0 X ! - FN<I1I8EJ@JKFI '- 4 / ! " 8K8 0 ?<<K / <M $ @E8C 'E;LJKI@8C * LCK@D 8IB<K + <<9 # % F & < C2> >.;?6?@< >
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Untitled
Abstract: No abstract text available
Text: GHL@?M +<K8C,O@;<0<D@:FE;L:KFI$@<C;#=<:K1I8EJ@JKFI ! FFC + , 0 ! 3!FFC+,0X!-FN<I1I8EJ@JKFI '-"/ ! " 8K 8 0 ?<<K /<M $@E8C ' E;LJ K I@ 8C + LC K @ D 8IB <K +<<9#% F&<C2>)>.;?6?@<>
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Untitled
Abstract: No abstract text available
Text: GHL@?M + <K8C , O@;< 0 <D @: FE;L: KFI$ @<C; # =<: K1I8EJ@JKFI !FFC+ , 0 ! 3 !FFC+ , 0 X ! - FN<I1I8EJ@JKFI '- " / ! " 8K8 0 ?<<K / <M $ @E8C 'E;LJKI@8C + LCK@D 8IB<K + <<9 # % F & < C2> )>.;?6?@< > (
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ipw60r070c6
Abstract: No abstract text available
Text: FHL@?M * <K8C , O@;< 0 <D @: FE;L: KFI$ @<C; # =<: K1I8EJ@JKFI !FFC* , 0 ! 3 !FFC* , 0 X ! - FN<I1I8EJ@JKFI '- 4 / ! " 8K8 0 ?<<K / <M $ @E8C 'E;LJKI@8C * LCK@D 8IB<K + <<9 # % F & < C2> >.;?6?@< >
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726-IPW60R070C6
IPW60R070C6
ipw60r070c6
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Untitled
Abstract: No abstract text available
Text: GHL@?M +<K8C,O@;<0<D@:FE;L:KFI$@<C;#=<:K1I8EJ@JKFI ! FFC + , 0 ! 3!FFC+,0X!-FN<I1I8EJ@JKFI '-"/ ! " 8K 8 0 ?<<K /<M $@E8C ' E;LJ K I@ 8C + LC K @ D 8IB <K +<<9#% F&<C2>)>.;?6?@<>
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Untitled
Abstract: No abstract text available
Text: GHL@?M + <K8C , O@;< 0 <D @: FE;L: KFI$ @<C; # =<: K1I8EJ@JKFI !FFC+ , 0 ! 3 !FFC+ , 0 X ! - FN<I1I8EJ@JKFI '- " / ! " 8K8 0 ?<<K / <M $ @E8C 'E;LJKI@8C + LCK@D 8IB<K + <<9 # % F & < C2> )>.;?6?@< > (
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Untitled
Abstract: No abstract text available
Text: GIM@?N + <K8C - O@;< 1 <D @: FE;L: KFI$ @<C; # =<: K2I8EJ@JKFI !FFC+ - 1 # 3 !FFC+ - 1 X # . FN <I2I8EJ@JKFI '. O 0 # " 8K8 1 ?<<K 0 <M $ @E8C 'E;LJKI@8C + LCK@D 8IB<K + < < 9# % F & < C2> >.;?6?@< >
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Untitled
Abstract: No abstract text available
Text: GIM@?N +<K8C-O@;<1<D@:FE;L:KFI$@<C;#=<:K2I8EJ@JKFI ! FFC +- 1 # 3!FFC+-1X#.FN<I2I8EJ@JKFI '.O0# " 8K 8 1 ?<<K 0<M $@E8C ' E;LJ K I@ 8C + LC K @ D 8IB <K +<<9#% F&<C2> >.;?6?@<>
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DIODE marking S4 59A
Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3
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REJ16G0002-2200
DIODE marking S4 59A
DIODE 1N4148 LL-34
Zener Diode SOD-323 marking code a2
marking v6 zener diode
fairchild marking codes sot-23
RKZ18B2KG
TWPEC 1w402
MTZJ SERIES ZENER DIODES
702 SOT-23 marking KJ
marking 513 SOD-323
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Untitled
Abstract: No abstract text available
Text: SK 50 DGDL 126 T CONVERTER, INVERTER, BRAKE =' T BR XIA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions Values Units IGBT - Inverter. For IGBT chopper maximum ratings, please refer to SK35DGDL126T PI:9 <I <I^; PG:9 =' T BR [¥Y] XI <I^;T B F <I%,+A .5 T @ +'
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SK35DGDL126T
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Untitled
Abstract: No abstract text available
Text: FDB2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining
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FDB2614
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Fairchild Semiconductor DS-513
Abstract: No abstract text available
Text: FDP2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining
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FDP2614
O-220
Fairchild Semiconductor DS-513
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Untitled
Abstract: No abstract text available
Text: FQB9P25 P-Channel QFET MOSFET -250 V, -9.4 A, 620 mΩ Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state
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FQB9P25
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D405N
Abstract: AEG T 51 N 1200 AEG D 251 N 1200 D24NR d629n aeg tt 18 n 1200 BYY 56 aeg tt 46 n 1200 D 4409 N 200 AEG T 670 N 2200
Text: 1 7E D • GDSTMSb G 0 D 1 3 2 T ö ■ T - O l- O l Leistungsdioden Power diodes Diodes de puissance Typ Ifrmsm Vrrm Type V' A Ifsm t-10nns M= Wjmax 45°C t-10nns M“ Wjmax 45°C kA kA A s A*s Ifavm/*c IpAVM A/°C tA=45*C 120°el. rec. A V TO tA =35aC
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G0D132T
t-10r
BYY57/
BYY58/
20x20
100x125
D24NR
41/mln.
D3507N
D405N
AEG T 51 N 1200
AEG D 251 N 1200
d629n
aeg tt 18 n 1200
BYY 56
aeg tt 46 n 1200
D 4409 N 200
AEG T 670 N 2200
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RTM 866 - 480
Abstract: SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790
Text: Halbleiter bauelemente 1972/73 INTERMETALL H albleiterwerk der Deutsche ITT Industries GmbH ITT Alphabetisches Typenverzeichnis Typ S eite Typ S eite Typ Seite 1 N 914 42 2 N 3055 38 BB 121 1 N914A 1 N914B 1 N 3604 42 42 42 2 N 3962 33 BB 122 2 N 3963 2 N 3964
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N914A
N914B
RTM 866 - 480
SAK 110
TAA775G
ITT TCA 700 Y
SAJ 220
SG 2368
ITT 90 38 TCA 700 Y
SAJ110
TCA 430
taa790
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
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