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    BYW80-200 TO220 Search Results

    BYW80-200 TO220 Datasheets Context Search

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    BYW80-200

    Abstract: BYW80F-200 BYW80FP-200 ISOWATT220AC
    Text: BYW80F/FP-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF AV 20 A VRRM 200 V Tj (max) 150°C VF (max) 0.85 V trr (max) 35 ns K TO-220AC BYW80-200 FEATURES Suited for SMPS Very low forward losses Negligible switching losses


    Original     		BYW80F/FP-200 O-220AC BYW80-200 ISOWATT220AC O-220FPAC: ISOWATT220AC BYW80F-200 O-220AC, O-220FPAC BYW80-200 BYW80F-200 BYW80FP-200 PDF

    BYW80-200

    Abstract: BYW80F-200 BYW80FP-200 ISOWATT220AC 0409 47 005
    Text: BYW80F/FP-200  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF AV 20 A VRRM 200 V Tj (max) 150°C VF (max) 0.85 V trr (max) 35 ns A A K TO-220AC BYW80-200 FEATURES Suited for SMPS Very low forward losses Negligible switching losses


    Original     		BYW80F/FP-200 O-220AC BYW80-200 ISOWATT220AC O-220FPAC: ISOWATT220AC BYW80F-200 O-220AC, O-220FPAC BYW80-200 BYW80F-200 BYW80FP-200 0409 47 005 PDF

    BYW80-200

    Abstract: BYW80F-200 BYW80FP-200 ISOWATT220AC L6PR
    Text: BYW80F/FP-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF AV 20 A VRRM 200 V Tj (max) 150°C VF (max) 0.85 V trr (max) 35 ns K A TO-220AC BYW80-200 FEATURES Suited for SMPS Very low forward losses Negligible switching losses


    Original     		BYW80F/FP-200 O-220AC BYW80-200 ISOWATT220AC O-220FPAC: O-220AC, O-220FPAC BYW80-200 BYW80F-200 BYW80FP-200 L6PR PDF

    Untitled

    Abstract: No abstract text available
    Text: BYW80 F -200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ ■ ■ SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AC):


    OCR Scan     		BYW80 ISOWATT220AC) O-220AC, ISOWATT220ACthis ISOWATT220AC BYW80-200 BYW80F-200 PDF

    BYW80F-200

    Abstract: BYW80-200 BYW80FP-200 ISOWATT220AC
    Text: BYW80F/FP-200  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF AV 20 A VRRM 200 V Tj (max) 150°C VF (max) 0.85 V trr (max) 35 ns A A K TO-220AC BYW80-200 FEATURES Suited for SMPS Very low forward losses Negligible switching losses


    Original     		BYW80F/FP-200 O-220AC BYW80-200 ISOWATT220AC O-220FPAC: ISOWATT220AC BYW80F-200 O-220AC, O-220FPAC BYW80F-200 BYW80-200 BYW80FP-200 PDF

    BYW80

    Abstract: BYW80-200 BYW80F-200 ISOWATT220AC
    Text: BYW80 F -200  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AC) : Insulating voltage = 2000 V DC


    Original     		BYW80 ISOWATT220AC) O-220AC, ISOWATT220AC O-220AC ISOWATT220AC BYW80-200 BYW80F-200 BYW80-200 BYW80F-200 PDF

    BYW80

    Abstract: BYW80-200 BYW80F-200 ISOWATT220AC
    Text: BYW80 F -200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AC) : Insulating voltage = 2000 V DC


    Original     		BYW80 ISOWATT220AC) O-220AC, ISOWATT220AC O-220AC ISOWATT220AC BYW80-200 BYW80F-200 BYW80-200 BYW80F-200 PDF

    BYW80

    Abstract: BYW80-200
    Text: BYW80−200 SWITCHMODEt Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: • • • • • • • http://onsemi.com Ultrafast 35 Nanosecond Recovery Time


    Original     		BYW80-200 O-220 BYW80/D BYW80 BYW80-200 PDF

    BYW80

    Abstract: BYW80-200 BYW80F-200 ISOWATT220AC
    Text: BYW80 F  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AC) : Insulating voltage = 2000 V DC


    Original     		BYW80 ISOWATT220AC) O220AC, ISOWATT220AC O220AC ISOWATT220AC BYW80-200 BYW80F-200 BYW80-200 BYW80F-200 PDF

    ph byw29 100

    Abstract: UF810 VHE1402
    Text: Ultra Fast Recovery Rectifiers UF810 - UF820 —C Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes —B .390 .045 .180 .245 .550 .139 .100 A B C D E F G H J K L M N P Base Cathode _1 .415 .055 .190 .260 .650 .155 .120 .250 .580 .210 .025 .115


    OCR Scan     		UF810 UF820 O-220AC UF810 ph byw29 100 VHE1402 PDF

    BYWBO

    Abstract: BYW29 BYW80 MUR805 MUR810 MUR815 UF810 UF815 UF820 VHE1401
    Text: Ultra Fast Recovery Rectifiers UF810 - UF820 — C Dim. Inches Minimum — B A B C D E F G H J K L M N P Base Cathode ? •it-M .3 9 0 .0 4 5 .180 .2 4 5 .5 5 0 .139 .100 -.5 0 0 .190 .014 .0 8 0 .0 2 8 .0 4 5 Millimeter Maximum Minimum .415 .0 5 5


    OCR Scan     		UF810 UF820 O-220AC UF815 BYW29â BYW80â MUR805 BYWBO BYW29 BYW80 MUR805 MUR810 MUR815 UF820 VHE1401 PDF

    diode byt 11600

    Abstract: fast diode byw 98 200 BYW 200 fast diode ifm "40 A" transil 30 V diode byt 45 BYT230PIV-400 BYW 62 RECTIFIER DIODES SGS rectifier diode for max 1.5A fast diode ifm if 40 A transil
    Text: BYT 01-200 →400 FAST RECOVERY RECTIFIER DIODES FAST RECOVERY RECTIFIER VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING SUITABLE APPLICATION FREE WHEELING DIODE IN CONVERTERS AND MOTORS CIRCUITS RECTIFIER IN S.M.P.S.


    Original     		PDF

    BYW29

    Abstract: BYW29-100 BYW29-150 BYW29-50 UES1401 UES1402 UES1403 es1403
    Text: RECTIFIERS BYW29-50 UES1401 BYW29-100 UES1402 BYW 29-150 UES1403 High Efficiency, 7A and 8A DESCRIPTION The B YW 29/U ES1400 Series, in a plastic package sim ilar to the T0-220, is specifically designed for operation in power switching circuits to frequencies in excess of lOOKHz.


    OCR Scan     		BYW29-50 UES1401 BYW29-100 UES1402 BYW29-150 UES1403 BYW29/UES1400 O-220, BYW29 UES1403 es1403 PDF

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode PDF

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 PDF

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069 PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode PDF

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode PDF

    mr852

    Abstract: DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534
    Text: MBRM120LT3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		MBRM120LT3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mr852 DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534 PDF