byw 36 v
Abstract: BYW32 byw 32 BYW 200 TU300 byw+36+v
Text: w ► BYW 32 Ì? BYW 36 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: S ch n e lle r G le ic h ric h te r und S ch a lte r z. B. fü r zeilenfreq uen ten B etrieb im F e rn sehgerät und Schaltnetzteile. Applications: Fast re ctifie r and sw itch for exam ple for TV-line output circuits and sw itch m ode
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66R2S
Abstract: 30R2S Diodes de redressement byw 68 26R2S BYW 200 r2 137 C2501 C5001 REDRESSEMENT
Text: DO 4 C B 33 C ontrolled avalanche silicon rectifier diodes D iodes de redressement au s ilic iu m à avalanche con trô lé e T (vj» Type Case (°C I ' fsm (A i IO (A l Vf / if (V) (A) IR ! V RRM <mA) V (BR> (VI I p 0,5 mA DRT 25 °C 76 max min Page 25 OC
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6tcase12s
12tcase125
12tcase
66R2S
30R2S
Diodes de redressement
byw 68
26R2S
BYW 200
r2 137
C2501
C5001
REDRESSEMENT
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silicon diode byw 60
Abstract: byw 36 v diode BYW 60
Text: Te m ic BYW32.BYW36 TELEFUNKEN Semiconductors Fast Silicon Mesa Rectifiers Features • Glass passivated junction • H erm etically sealed package • L ow reverse current • Soft recovery characteristic Applications Fast rectifier and switch for exam ple for T V -lin e
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BYW32.
BYW36
silicon diode byw 60
byw 36 v
diode BYW 60
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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diode BYW 91
Abstract: byw 98 100 fast diode byw 98 200 fast diode byw 98 100
Text: BYW32.BYW36 Vishay Telefunken Fast Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Low reverse current • Soft recovery characteristics Applications Fast rectifier and sw itch fo r exam ple fo r T V -lin e o ut
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BYW32.
BYW36
D-74025
24-Jun-98
diode BYW 91
byw 98 100
fast diode byw 98 200
fast diode byw 98 100
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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Untitled
Abstract: No abstract text available
Text: ACFF-1024 ISM Bandpass Filter 2401 – 2482 MHz Data Sheet Description Features The Avago ACFF-1024 is a miniaturized Bandpass Filter designed for use in the 2.4 GHz Industrial, Scientific and Medical (ISM) band. • 50 Ω Input/Output The ACFF-1024 is designed to enable concurrent operation of Wireless LAN and Bluetooth applications that coexist with other wireless standards, such as 2.5 GHz WiMAX,
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ACFF-1024
ACFF-1024
AV02-3973EN
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ACPF-7124
Abstract: No abstract text available
Text: ACFF-1024 ISM Bandpass Filter 2401 – 2482 MHz Data Sheet Description Features The Avago ACFF-1024 is a miniaturized Bandpass Filter designed for use in the 2.4 GHz Industrial, Scientific and Medical (ISM) band. • 50 Ω Input/Output The ACFF-1024 is designed to enable concurrent operation of Wireless LAN and Bluetooth applications that coexist with other wireless standards, such as 2.5 GHz WiMAX,
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ACFF-1024
ACFF-1024
AV02-3973EN
ACPF-7124
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diode BYW 64
Abstract: B81121 X2 mkt TDB7812T B81121 B32530 1nf 100v mkt 100v mkt b81121 x2 7812T B41822
Text: Monitor -IC Nr 1 2 3 4 5 6 7 8 9 10 11 12 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 Name BR1 C11 C12 C13 C14 C15 C21 C22 C23 C24 C25 C26 C27 C31 C32 C33 C34 C35 C36 C37 C38 C39 C41 C42 C43 C44 C51 C52 C53 C54 C61 C62
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B250C5000/3300
F/250V
3nF/250V
F/400V
47nF/400V
F/50V
F/63V
F/100V
diode BYW 64
B81121 X2 mkt
TDB7812T
B81121
B32530
1nf 100v mkt
100v mkt
b81121 x2
7812T
B41822
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BY223
Abstract: BY277 BYX50-200R BYX50-200 bridge RECTIFIER GI by277 750r diode BY223 600R 800R BYW19
Text: Silicon rectifier diodes and bridge m odules fast recovery rectifier diodes Type No. O utline Drawing reference A (V) (V) (A ) SOD-38 5* 1500 1500 10 20 SOD-38 7 800 1000 800 800 20 7 50 100 150 50 100 150 DO-4 B1 7 200 300 350 600 SOD-38 7 600R 750R SOD-38
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BY223
OD-38
BYW19
BYW29
tBYX71
S0D38
BY277
t1N3889
BY223
BYX50-200R
BYX50-200
bridge RECTIFIER GI
by277 750r
diode BY223
600R
800R
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Untitled
Abstract: No abstract text available
Text: TPS728xx Series www.ti.com SBVS095 – AUGUST 2007 200mA Low-Dropout Linear Regulator with Pin-Selectable Dual-Voltage Level Output FEATURES 1 • • • • 2 • • • • • Very Low Dropout: 230mV Typical at 200mA 3% Accuracy Over Load/Line/Temperature
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TPS728xx
SBVS095
200mA
230mV
200mA
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Untitled
Abstract: No abstract text available
Text: TPS728xx Series www.ti.com SBVS095 – AUGUST 2007 200mA Low-Dropout Linear Regulator with Pin-Selectable Dual-Voltage Level Output FEATURES 1 • • • • 2 • • • • • Very Low Dropout: 230mV Typical at 200mA 3% Accuracy Over Load/Line/Temperature
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TPS728xx
SBVS095
200mA
230mV
200mA
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Untitled
Abstract: No abstract text available
Text: TPS728xx Series www.ti.com SBVS095 – AUGUST 2007 200mA Low-Dropout Linear Regulator with Pin-Selectable Dual-Voltage Level Output FEATURES 1 • • • • 2 • • • • • Very Low Dropout: 230mV Typical at 200mA 3% Accuracy Over Load/Line/Temperature
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TPS728xx
SBVS095
200mA
230mV
200mA
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Untitled
Abstract: No abstract text available
Text: TPS728xx Series www.ti.com SBVS095 – AUGUST 2007 200mA Low-Dropout Linear Regulator with Pin-Selectable Dual-Voltage Level Output FEATURES 1 • • • • 2 • • • • • Very Low Dropout: 230mV Typical at 200mA 3% Accuracy Over Load/Line/Temperature
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TPS728xx
SBVS095
200mA
230mV
200mA
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Untitled
Abstract: No abstract text available
Text: H D 153109-C olor P alette w ith Triple 6 -b it D A C o n verter The HD153109 is a triple 6-bit video DAC with color palette RAM, designed specifically for high performance high resolution color graphics. The HD153109 supports up to 256 simultaneous colors
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153109---------C
HD153109
RS343A/170A
153109M
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Untitled
Abstract: No abstract text available
Text: r= J S G S -T H O M S O N L6201 L6202-L6203 DMOS FULL BRIDGE DRIVER PRELIMINARY DATA • SUPPLY VOLTAG E UP TO 48 V ■ 5A MAX PEAK CURRENT 2A max. for L6201 ■ TOTAL RMS CURRENT UP TO L6201: 1A; L6202: 1.5A; L6203: 4A ■ R ds (o n ) 0.3 f i (typical value at 25 °C)
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L6201
L6202-L6203
L6201)
L6201:
L6202:
L6203:
L6201-L6202-L6203
L6202)
L6203)
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Untitled
Abstract: No abstract text available
Text: Standard Products UT8R512_8 512K x 8 SRAM Advanced Data Sheet October 30, 2001 Rev G FEATURES q 10ns maximum access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q CMOS compatible inputs and output levels, three-state
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UT8R512
0E14n/cm
36-lead
40-lead
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Untitled
Abstract: No abstract text available
Text: Standard Products UT8R512K8 512K x 8 SRAM Advanced Data Sheet March 25, 2002 FEATURES q 10ns maximum access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q CMOS compatible inputs and output levels, three-state bidirectional data bus
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UT8R512K8
0E14n/cm
36-lead
40-lead
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UT8R512K8
Abstract: No abstract text available
Text: Standard Products UT8R512K8 512K x 8 SRAM Advanced Data Sheet August 29, 2002 FEATURES q 10ns maximum access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q CMOS compatible inputs and output levels, three-state bidirectional data bus
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UT8R512K8
0E14n/cm
36-lead
40-lead
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DD1 marking
Abstract: No abstract text available
Text: Standard Products UT8R512K8 512K x 8 SRAM Advanced Data Sheet June 17, 2002 FEATURES q 10ns maximum access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q CMOS compatible inputs and output levels, three-state bidirectional data bus
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UT8R512K8
36-lead
40-lead
DD1 marking
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Untitled
Abstract: No abstract text available
Text: Standard Products UT8R512_8 512K x 8 SRAM Advanced Data Sheet August 21, 2001 Rev G FEATURES q 10ns maximum access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q CMOS compatible inputs and output levels, three-state
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UT8R512
0E14n/cm
36-lead
40-lead
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UT8R512K8
Abstract: No abstract text available
Text: Standard Products UT8R512K8 512K x 8 SRAM Advanced Data Sheet November 9, 2001 Rev G FEATURES q 10ns maximum access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q CMOS compatible inputs and output levels, three-state
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UT8R512K8
0E14n/cm
36-lead
40-lead
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Untitled
Abstract: No abstract text available
Text: Standard Products UT8R512K8 512K x 8 SRAM Advanced Data Sheet April 2, 2003 FEATURES q 15ns maximum access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q CMOS compatible inputs and output levels, three-state bidirectional data bus
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UT8R512K8
0E14n/cm
36-lead
02TBD)
40-lead
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A15G
Abstract: No abstract text available
Text: Standard Products UT8R512K8 512K x 8 SRAM Advanced Data Sheet March 11, 2003 FEATURES q 15ns maximum access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q CMOS compatible inputs and output levels, three-state bidirectional data bus
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UT8R512K8
0E14n/cm
36-lead
02TBD)
40-lead
A15G
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