byw 150
Abstract: diode byw 81 200 diode BYW 66 BYW29 JESD22-B102D J-STD-002B
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series
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ITO-220AC
O-220AC
BYW29
J-STD-020C,
O-263AB
ITO-220AC
2002/95/EC
2002/96/EC
BYWF29
byw 150
diode byw 81 200
diode BYW 66
JESD22-B102D
J-STD-002B
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Untitled
Abstract: No abstract text available
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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PDF
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J-STD-020,
O-263AB
O-220AC
ITO-220AC
2002/95/EC
2002/96/EC
ITO-220AC
O-220AC
BYW29
BYWF29
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diode BYW 66
Abstract: BYW29 JESD22-B102 J-STD-002 BYW29-200-E3 byw 91-4
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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PDF
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J-STD-020,
O-263AB
O-220AC
ITO-220AC
2002/95/EC
2002/96/EC
ITO-220AC
O-220AC
BYW29
BYWF29
diode BYW 66
JESD22-B102
J-STD-002
BYW29-200-E3
byw 91-4
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byw 91-4
Abstract: BYW series byw29
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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PDF
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O-220AC
ITO-220AC
BYW29
BYWF29
O-263AB
J-STD-020C,
ITO-220AC
2002/95/EC
byw 91-4
BYW series
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Untitled
Abstract: No abstract text available
Text: BYW 27-50 . BYW 27-1000 Silicon Rectifiers Silizium Gleichrichter Nominal current – Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50.1000 V Plastic case Kunststoffgehäuse DO-41 DO-204AL Weight approx. – Gewicht ca.
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DO-41
DO-204AL
UL94V-0
100/C
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Untitled
Abstract: No abstract text available
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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PDF
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O-220AC
ITO-220AC
BYW29
BYWF29
O-263AB
J-STD-020,
ITO-220AC
2002/95/EC
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byw 04-15
Abstract: BYW29 JESD22-B102D J-STD-002B byw 91-4
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction ITO-220AC TO-220AC • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series
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Original
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PDF
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ITO-220AC
O-220AC
BYW29
O-263AB
BYWF29
O-263AB
BYWB29
2002/95/EC
2002/96/EC
J-STD-020C
byw 04-15
JESD22-B102D
J-STD-002B
byw 91-4
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BYW 62
Abstract: BYW 200 BYW 26
Text: BYW 27-50 . BYW 27-1000 Silicon Rectifiers Silizium Gleichrichter Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung -0.1 50…1000 V Plastic case Kunststoffgehäuse 5.1 -0.1 Type 62.5 ±0.5 Ø 2.6 1A DO-41 DO-204AL
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PDF
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DO-41
DO-204AL
UL94V-0
100/C
BYW 62
BYW 200
BYW 26
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BYW 56 V
Abstract: BYW 200 DO-204AL
Text: BYW 27-50 . BYW 27-1000 Silicon Rectifiers Silizium Gleichrichter Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung -0.1 50…1000 V Plastic case Kunststoffgehäuse 5.1 -0.1 Type 62.5 ±0.5 Ø 2.6 1A DO-41 DO-204AL
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PDF
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DO-41
DO-204AL
UL94V-0
100/C
BYW 56 V
BYW 200
DO-204AL
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BYW295
Abstract: No abstract text available
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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PDF
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O-220AC
ITO-220AC
BYW29
BYWF29
O-263AB
J-STD-020,
ITO-220AC
2002/95/EC
BYW295
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BYW29
Abstract: JESD22-B102 J-STD-002
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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Original
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PDF
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J-STD-020,
O-263AB
O-220AC
ITO-220AC
2002/95/EC
2002/96/EC
ITO-220AC
O-220AC
BYW29
BYWF29
JESD22-B102
J-STD-002
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BYW 26
Abstract: No abstract text available
Text: BYW 27-50 . BYW 27-1000 Silicon Rectifiers Silizium Gleichrichter Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung -0.1 50…1000 V Plastic case Kunststoffgehäuse 5.1 -0.1 62.5 ±0.5 Ø 2.6 1A DO-41 DO-204AL
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Original
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PDF
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DO-41
DO-204AL
UL94V-0
100LC
BYW 26
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byw 150
Abstract: No abstract text available
Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series
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Original
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PDF
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O-220AC
ITO-220AC
J-STD-020C,
O-263AB
O-220AC
ITO-220AC
2002/95/EC
2002/96/EC
O-220AC,
ITO-220AC,
byw 150
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byw 150
Abstract: BYW 200 BYV 35 77150 BYV 77 diodes byw 51 100 Thomson-CSF rectifier BYW 29 500 BYW 98/100 BYV+80+-+200
Text: high efficiency fast recovery rectifier diodes diodes de redressement rapide à haut rendement Types •o VRRM ■f s m 10 m s A (V) (A) 3 A / Tcase = 85°C BYW BYW BYW BYW Tj = 150°C 9 8 - 50 98 -100 98 -150 98 -200 7 A / Tcase = 130°C BYW BYW BYW BYW
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CB-197)
ICB-22
CB-19)
byw 150
BYW 200
BYV 35
77150
BYV 77
diodes byw 51 100
Thomson-CSF rectifier
BYW 29 500
BYW 98/100
BYV+80+-+200
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P6004R
Abstract: BYW 62 s95A P4004 214200 BYW 200 P1004R BYW17/100
Text: DIODES DE REDRESSEMENT rectifier diodes V RWM 'o 'f TYPES A 1 ,2 5 A F F F F F F F no nxy nxy no BY BY BY BY BY t am b = 5 0 ° C 251 252 253 254 255 BYW 17BYW 17 BYW 17 BYW 17BYW 17BYW 17BYW 17- 100 200 400 600 800 1000 1200 3 A / 1N 1N IN 1N 1N IN 1N (R)
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P4004,
P6004R
BYW 62
s95A
P4004
214200
BYW 200
P1004R
BYW17/100
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BYW 64 bridge rectifier
Abstract: diode BYW 64
Text: BYW 27-50.BYW 27-1000 Silizium Gleichrichter Silicon Rectifier 1A Nominal current Nennstrom 50. 1000 V Repetitive peak reverse voltage Periodische Spitzensperrspannung DO-41 Plastic case Kunststoffgehäuse <*-nax. qf 2.6 0.4 Weight approx. Gewicht ca.
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OCR Scan
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PDF
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DO-41
UL94V-0
R0D1RS14
000017S
BYW 64 bridge rectifier
diode BYW 64
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BYW74
Abstract: 175aa byw76
Text: BYW 72 £8 BYW 76 'W Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Schneller Gleichrichter und Schalter z.B. für zeilenfrequenten Betrieb im Fern sehgerät und Schaltnetzteile. Applications: Fast rectifier and switch for example for TV-line output circuits and switch mode
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OCR Scan
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PDF
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BYW 90
Abstract: l200c 1200C dioda ZTF 160 soae
Text: STC s G S^THQMSQN Q Goaaa3M t BYW 78-50-200, R BYW 78-150 A, (R) 1H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A HAUT RENDEMENT D T 'ô 3 ~ Z I 59C 022 HIGH EFFICIENCY SUPERSWITCH
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OCR Scan
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PDF
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I71H1237
BYW 90
l200c
1200C
dioda
ZTF 160
soae
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Diode BYW 56
Abstract: 0224S diode BYW 19 2791T byw+36+v
Text: S G S-THOMSQN SIC D o THOMSON*CSF BYW 81-50—200, R BYW 81-150 A. (R) DIVISION SEMICONOUCTÏURS DISCRETS : TTETEB? QGQEEMt. SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 022^6 HIGH EFFICIENCY SUPER SWITCH
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OCR Scan
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PDF
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1200C
REDRE08
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
Diode BYW 56
0224S
diode BYW 19
2791T
byw+36+v
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111EF
Abstract: BYW 200 diodes byw 78 100 T03A diode BYW 66 78150
Text: STC s G S^THQMSQN Q Goaaa3M t BYW 78-50-200, R BYW 78-150 A , (R) 1 H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 022 D T 'ô 3 ~ Z I HIGH EFFICIENCY V SUPERSWITCH
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OCR Scan
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PDF
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CB-425)
CB-262)
CB-262
QDD53t
CB-19)
CB-428)
CB-244
111EF
BYW 200
diodes byw 78 100
T03A
diode BYW 66
78150
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Diode LT 9250
Abstract: diode BYW 92 LT 9250 diode lt 0236 5 amp diode byw 92-200 diode BYW 92-200 diodes byw 92 diodes byw diode BYW 19
Text: S G S- TH OM SO N O STC D 1 7121237 00G2252 BYW 92-50^200, R BYW 92-150 A f (R) T H O M S O N -C S F D M S IO N SEM ICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 02252 HIGH EFFICIENCY
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OCR Scan
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PDF
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00G2252
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
Diode LT 9250
diode BYW 92
LT 9250
diode lt 0236
5 amp diode byw 92-200
diode BYW 92-200
diodes byw 92
diodes byw
diode BYW 19
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BYW29
Abstract: bvw29 BYW29-150M T0220SM 150V-200V
Text: 613 3107 bOE D SENELAB DQGQSSM 2TB « S I I L B - PLC T 3 - 1 7 SEMELAB BYW29 - 50M B Y W 29- 100M BYW 29-150M BYW 29-200M MECHANICAL DATA HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER FOR HI-REL APPLICATIONS Dimensions in mm FEATURES • HERMETIC TO 220 M ETAL OR
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PDF
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BYW29
BYW29-
BYW29-150M
BYW29
T0220M
T0220
T0220SM
bvw29
150V-200V
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77150
Abstract: diode puissance 30 amp diode BYW 76 diode BYW 66 BYW 77 high efficiency fast recovery diode byw diode BYW BYW 90 22313 diodes byw
Text: ~5TC D I ÎTETEB? QGGE22Û 3 | S G S— THOMSON BYW 77-50-200, R BYW 77-150 A, (R) O THOMSON aCSF DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH E FFIC IE N C Y FAST R ECO V ERY R E C TIFIE R S R E D R ESSEU R S RAPID ES A H AU T REND EM ENT 59C 02228
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PDF
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PIAVI51
BVW77
77150
diode puissance 30 amp
diode BYW 76
diode BYW 66
BYW 77
high efficiency fast recovery diode byw
diode BYW
BYW 90
22313
diodes byw
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diodes byt
Abstract: diodes byw VRRM 600 IO 20 IN1344B 61100 IN1190
Text: THOMSON M IL E T S P A T IA U X SSE T> • T D 2 b fl7 E DDDDMflfl i m ■THCP1 T^&f- DESCRIPTION PRODUCT PACKAGE According to CECC 50000 DISCRETE COMPONENTS RECTIFIER DIODES = 50 V I0 = 12 A ■ BYW 88-100, R * v r r m = 100 V l0 = 12 A ■ BYW 88-200, (R)* V rrm = 200 V
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