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    BYV 6 Search Results

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    BYV 6 Price and Stock

    WeEn Semiconductor Co Ltd BYV60W-600PQ

    DIODE STANDARD 600V 60A TO2472
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    DigiKey BYV60W-600PQ Tube 4,039 1
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    Avnet Americas BYV60W-600PQ Tube 8 Weeks 600
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    Mouser Electronics BYV60W-600PQ 1,721
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    TME BYV60W-600PQ 596 1
    • 1 $1.96
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    Avnet Silica BYV60W-600PQ 9 Weeks 600
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    EBV Elektronik BYV60W-600PQ 9 Weeks 600
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    WeEn Semiconductor Co Ltd BYV60W-600PT2Q

    DIODE STANDARD 600V 60A TO2472
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    DigiKey BYV60W-600PT2Q Tube 438 1
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    Avnet Americas BYV60W-600PT2Q Tube 8 Weeks 600
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    Mouser Electronics BYV60W-600PT2Q 2,418
    • 1 $1.96
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    Newark BYV60W-600PT2Q Bulk 491 1
    • 1 $2.53
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    TME BYV60W-600PT2Q 1
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    Avnet Asia BYV60W-600PT2Q 8 Weeks 600
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    Avnet Silica BYV60W-600PT2Q 9 Weeks 600
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    EBV Elektronik BYV60W-600PT2Q 9 Weeks 600
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    WeEn Semiconductor Co Ltd BYV60W-600PSQ

    DIODE STANDARD 600V 60A TO2472
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    DigiKey BYV60W-600PSQ Bulk 600
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    Mouser Electronics BYV60W-600PSQ
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    Vishay Intertechnologies BYV26A-TAP

    Rectifiers 1.0 Amp 200 Volt 30 Amp IFSM
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    Mouser Electronics BYV26A-TAP 67,030
    • 1 $0.74
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    • 100 $0.355
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    Vishay Intertechnologies SBYV28-200-E3/73

    Rectifiers 200 Volt 3.5A 20ns 90 Amp IFSM
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    Mouser Electronics SBYV28-200-E3/73 42,282
    • 1 $0.62
    • 10 $0.41
    • 100 $0.311
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    BYV 6 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BYV60 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BYV60-1000 Philips Semiconductors 13A Iout, 1.0kV Vrrm Fast Recovery Rectifier Scan PDF
    BYV60-1000 USHA 13A Iout, 1.0kV Vrrm Fast Recovery Rectifier Scan PDF
    BYV60-1200 Philips Semiconductors 13A Iout, 1.2kV Vrrm Fast Recovery Rectifier Scan PDF
    BYV60-200 USHA 60A Iout, 200V Vrrm Fast Recovery Rectifier Scan PDF
    BYV60-300 USHA 60A Iout, 300V Vrrm Fast Recovery Rectifier Scan PDF
    BYV60-400 USHA 60A Iout, 400V Vrrm Fast Recovery Rectifier Scan PDF
    BYV60-500 USHA 60A Iout, 500V Vrrm Fast Recovery Rectifier Scan PDF
    BYV60-600 USHA 60A Iout, 600V Vrrm Fast Recovery Rectifier Scan PDF
    BYV60-800 USHA 60A Iout, 800V Vrrm Fast Recovery Rectifier Scan PDF
    BYV60-850 Philips Semiconductors 13A Iout, 850V Vrrm Fast Recovery Rectifier Scan PDF
    BYV60-900 USHA 60A Iout, 900V Vrrm Fast Recovery Rectifier Scan PDF
    BYV60W-600PQ WeEn Semiconductors Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 600V 60A TO247-2 Original PDF
    BYV60W-600PSQ WeEn Semiconductors BYV60W-600PS/SOD142/STANDARD MAR Original PDF
    BYV60W-600PT2Q WeEn Semiconductors DIODE GEN PURP 600V 60A TO247-2 Original PDF
    BYV61 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BYV61 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BYV61 Telefunken Electronic Silicon MESA Diodes Scan PDF
    BYV61 Vishay Telefunken Silicon Mesa Diodes, Very Fast Rectifier and Switch Scan PDF
    BYV62 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    BYV 6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Diode BYV 95

    Abstract: byv 16 BYV 08
    Text: BYV12, BYV 13, BYV 14, BYV 15, BYV 16 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Lead Pb -free component • Compliant to RoHS directive 2002/95/EC and in


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    BYV12, 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, BYV12 BYV13 BYV14 BYV15 BYV16 Diode BYV 95 byv 16 BYV 08 PDF

    BYV 200

    Abstract: No abstract text available
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    O-220AB J-STD-020, O-263AB O-220AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 BYV 200 PDF

    BYV32

    Abstract: BYV32-100 BYVF32 JESD22-B102D J-STD-002B
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    O-220AB J-STD-020C, O-263AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 BYV32-100 JESD22-B102D J-STD-002B PDF

    BYV32

    Abstract: BYVF32 JESD22-B102D J-STD-002B
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    O-220AB J-STD-020C O-263AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 O-263AB 08-Apr-05 JESD22-B102D J-STD-002B PDF

    BYVB32-200-E3

    Abstract: BYV32 BYVF32 JESD22-B102D J-STD-002B Diode BYV 95
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    O-220AB J-STD-020C, O-263AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 BYVB32-200-E3 JESD22-B102D J-STD-002B Diode BYV 95 PDF

    BYV32-200E

    Abstract: Diode BYV 95
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    O-220AB ITO-220AB BYV32 BYVF32 O-263AB J-STD-020, ITO-220AB 2002/95/EC BYV32-200E Diode BYV 95 PDF

    BYV32

    Abstract: BYVF32 JESD22-B102 J-STD-002 BYV 35 C BYV 35
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    O-220AB J-STD-020, O-263AB O-220AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 JESD22-B102 J-STD-002 BYV 35 C BYV 35 PDF

    Untitled

    Abstract: No abstract text available
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    O-220AB ITO-220AB BYV32 BYVF32 O-263AB J-STD-020, ITO-220AB 2002/95/EC PDF

    BYV32-150

    Abstract: byv 20 BYV32100
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    O-220AB ITO-220AB BYV32 BYVF32 O-263AB J-STD-020C, ITO-220AB 2002/95/EC BYV32-150 byv 20 BYV32100 PDF

    BYV32-200E

    Abstract: BYV32 BYVF32 JESD22-B102 J-STD-002 byv325
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    O-220AB J-STD-020, O-263AB O-220AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 BYV32-200E JESD22-B102 J-STD-002 byv325 PDF

    Untitled

    Abstract: No abstract text available
    Text: BYV 10-60  SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forwardvoltagedrop and fastrecovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.


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    Untitled

    Abstract: No abstract text available
    Text: BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.


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    byv 20

    Abstract: No abstract text available
    Text: BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.


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    Untitled

    Abstract: No abstract text available
    Text: BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.


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    Untitled

    Abstract: No abstract text available
    Text: BYV 10- 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.


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    Untitled

    Abstract: No abstract text available
    Text: BYV 10- 40  SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forwardvoltagedrop and fastrecovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.


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    byv 65

    Abstract: No abstract text available
    Text: BYV 10- 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.


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    byv 20

    Abstract: byv 65
    Text: BYV 10-20 A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.


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    BYV 200

    Abstract: BYV 35 byv ultra Fast Recovery Rectifier
    Text: Lß S A G rlB B ULTRA-FAST-RECOVERY-RECTIFIER DIODES V RRM V Type I I V at I F FA V FSM F (A) (V) (A) (A) rr (ns) T jmax (C) BYV BYV BYV BYV BYV BYV BYV 01-100 01-150 01-200 01-300 01-400 01-500 01-600 100 150 200 300 400 500 600 1.0 1.0 1.0 1.0 1.0 1.0


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    BYW 200

    Abstract: diodes byw 92 byw 150 diodes byw 08 200 Thomson-CSF diodes de redressement Diodes de redressement diodes byw CB-34 1250A2s 92200
    Text: h ig h e ffic ie n c y f a s t r e c o v e r y r e c t if ie r d io d e s y THOMSON-CSF diodes de redressement rapide à haut rendement Types •o Vrrm >FSM 10 ms A <V ) (A) Tj = 150° C 35A / Tease = 110°C N N N BYV 92-200 (R) BYV 92-300 (R) BYV 92-400 (R)


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    28UNF* CB-34) BYW 200 diodes byw 92 byw 150 diodes byw 08 200 Thomson-CSF diodes de redressement Diodes de redressement diodes byw CB-34 1250A2s 92200 PDF

    SCHOTTKY bys 92-50

    Abstract: RECTIFIER bys 92-50 BYV 35 BYS 98-50
    Text: Epitaxial rectifier diodes Type V r rm Ifa v m t A = 25 °C V A vF Ifs m 10 ms, t,r Ir = Outline max ¡F - 1FAV W tV| = 25 °C VR tv , - a . A V mA ns °c < 0 .3 5 <50 150 111 112 V rh M • BYV 29-500 500 g 100 < 1 .4 ■ BYV 32-150 150 2x10 150 < 1.15 < 0 .6


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    esja

    Abstract: ESJC ESJA82-12 BYV 35 esjc 0309 ESJA 52-12
    Text: Epitaxial Rectifier Diodes A tA = 25°C vF V ~ ¡F = I favm tv, = 25°C • ■ ■ ■ BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design 2x10 2x10 8 150 150 80 < 1,15 < 1,15 < 1,3 Ifsm Ifavm A t=8,3ms tvj = 25°C mA Ir trr outline mA ns < 35


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    ESJA82-12 esja ESJC ESJA82-12 BYV 35 esjc 0309 ESJA 52-12 PDF

    ESJA

    Abstract: ESJC
    Text: Epitaxial Rectifier Diodes rrm V Ifa vm V Ifs m BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design Ir trr ns V mA = I fAVM tVJ= 25°C Vr = VHRM 150 150 80 < 1,15 < 1,15 <1,3 <0,6 <0,6 <0,6 V rrm If s m IpAVM kV A t=8,3ms tvj = 25°C mA tA = 25°C


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    DD21liD ESJA ESJC PDF

    Untitled

    Abstract: No abstract text available
    Text: TELEFUNKEN ELECTRONIC 17E D • ô'îSDQ'îb 000^035 fl BYV 61BYV 62BYV 63 TMUIIFIMIKIK] electronic Creative Technologies Silicon Mesa Diodes Applications; Very fast rectifier and switch for example for switch mode power supply Features: • Glass passivated junction


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