byv 20
Abstract: byv 65
Text: BYV 10-20 A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
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BYV 200
Abstract: byv 20
Text: BYV 10-20 A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
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ByV schottky
Abstract: No abstract text available
Text: BYV 10-20 → 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
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byv 20
Abstract: No abstract text available
Text: BYV 10-20 → 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
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Diode BYV 95
Abstract: byv 16 BYV 08
Text: BYV12, BYV 13, BYV 14, BYV 15, BYV 16 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Lead Pb -free component • Compliant to RoHS directive 2002/95/EC and in
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BYV12,
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYV12
BYV13
BYV14
BYV15
BYV16
Diode BYV 95
byv 16
BYV 08
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Untitled
Abstract: No abstract text available
Text: BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forwardvoltagedrop and fastrecovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
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Untitled
Abstract: No abstract text available
Text: BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
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byv 65
Abstract: No abstract text available
Text: BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
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diode 698
Abstract: DIODE REDRESSEMENT diodes redressement thomson Diodes de redressement
Text: BYV 10-20 —►B YV 10-4 THOMSON SEMICONDUCTORS SCHOTTKY RECTIFIER .DIODES, DIODES DE REDRESSEMENT'! SCHOTTKY . *»? : -. 'o - 1 A*/Tamb - 80°C Metal to atficon rectifier diodes in glees case featuring very low forward voltage drop and fast recovery time, intented for low voltage switching
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Untitled
Abstract: No abstract text available
Text: C T SGS-THOMSON ^ 7 # . HD»HLI TO s M(gi BYV 10-20 ->40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featu ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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BYV 200
Abstract: diodes byw 92 FZJ 101 99P-200 byw 150 BYW 200 diodes byw 08 200 BYV 35 diodes byw 51 200 BYV 35 C
Text: / ^ 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# raoœmimMogs ' r /v r r m Tj 100°C max mA *rr (1) max (ns) Package 1 35 TO 220 RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES (Continued) VRRM = 50,100,150, 200 V Type trr max 35.80 ns
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BYW77P-
77P-100
77P-150
77P-200
77PI-150
77PI-200
BYW99P-
99P-100
99P-1508-100,
BYV 200
diodes byw 92
FZJ 101
99P-200
byw 150
BYW 200
diodes byw 08 200
BYV 35
diodes byw 51 200
BYV 35 C
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BYV 200
Abstract: BYV 200v FZJ 101 BYX61-200 BYW 200 BYX61-400 99P-200 77P-200 BYX65-400 BYV 35 C
Text: SGS-THOMSON ^/^7#7 raoœmimMogs GENERAL PURPOSE & INDUSTRIAL RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES Continued VR R M = 50,100,150, 200 V Type t rr max 35.80 ns ' r /v r r m Tj 100°C max (mA) *rr (1) max (ns) Package 1 35 TO 220
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BYW77P-
77P-100
77P-150
77P-200
77PI-150
77PI-200
BYW99P-
99P-100
99P-150ng
BYX61-100
BYV 200
BYV 200v
FZJ 101
BYX61-200
BYW 200
BYX61-400
99P-200
BYX65-400
BYV 35 C
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SOD106A
Abstract: 1N5819 sod87 IMPLOTEC byv 20 diode 1N5817 Philips BYG90-40 BYG90-90 sod81
Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers SCHOTTKY-BARRIER DIODES OVERVIEW leaded Vr V 20 30 40 90 100 SOD81 1.0 A SOD87 1.0 A surface-mount SOD106A SOT223 1.0 A 1.0 A
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1N5817
BYV10-20
1N5818
1N5819
PRLL5817
PRLL5818
PRLL5819
OD106A
OT223
BYG90-20
SOD106A
1N5819 sod87
IMPLOTEC
byv 20 diode
1N5817 Philips
BYG90-40
BYG90-90
sod81
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BAS18
Abstract: BAT 43 Schottky Diodes BYV 200 BYV 35 C BAT45 BAR29 BYV 43 45 BAT 49 melf Schottky glass BAT29
Text: SCHOTTKY DIODES SELECTOR GUIDE RF AND ULTRAFAST SWITCHING If, continuous forward current / C0» / 30 mA 15 mA V rrm V DO 35 Glass MINIMELF Glass / SOT 23 Plastic DO 35 Glass 4 BAR 19 / MINIMELF Glass c SOT 23 Plastic @ VR V f @ If max max (V) (V) (mA) (PF)
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0-20A
BAS18
BAT 43 Schottky Diodes
BYV 200
BYV 35 C
BAT45
BAR29
BYV 43 45
BAT 49
melf Schottky glass
BAT29
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Untitled
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC 17E D • ô'îSDQ'îb 000^035 fl BYV 61 •BYV 62 •BYV 63 TMUIIFIMIKIK] electronic Creative Technologies Silicon Mesa Diodes Applications; Very fast rectifier and switch for example for switch mode power supply Features: • Glass passivated junction
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TMM BAT 48
Abstract: melf Schottky Byv 10-40 tm BYV 30 45 BAT 49
Text: r=7 SURFACE MOUNT DEVICES ^ 7# SGS-THOMSON IlO ÎÂ ilL iÊ ÎIiM ilÊ i GENERAL PURPOSE & INDUSTRIAL MINIMELF I MELF MINIMELF MELF SCHOTTKY DIODES Type VRRM 'F V •o* (mA) UHF and ultra fast switching TMM TMM TMM TMM BAR 19 BAT 29 BAT 19 BAT 45 |R (1)
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ps/20
0-20A
TMM BAT 48
melf Schottky
Byv 10-40 tm
BYV 30 45
BAT 49
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BAT19
Abstract: DO-35 C3 BYV 35
Text: THO M SO N MIL ET S P A T I A U X SSE D Bi 1 0 E b 6 7 E Q G O C ma ? 205 • THCMV-<>j,-e% DISCRETE COMPONENTS C3 PRODUCT DESCRIPTION PACKAGE -2 g -2 S 03 O £ <=> . 0£ 5 > -» -O r> O < LU O ys ^ < 75 < LU SCHOHKY SMALL SIGNAL DIODES VRRM = 20 V Cmax =
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IN5711
Abstract: 1N3595DHD 4148 GERMANIUM IN5818 SMALL SIGNAL SCHOTTKY DIODES DO-35 IN270 CB-26 thomson 5ns BYV 200 in3595
Text: S G S-TH O M SO N D | - 712*1237 Ü D a 4 fl?4 THOMSON SEMI CONDUCTORS 0 T~ Y- ° — / ~ o 7 ~ germanium signal diodes Types •o Vr • f @ Vp = IV ■r m ax max min m ax V (mA) {mAJ <k A ) I Case Vr (V) gold bond Tamb = 2 5 °C / V 90 100 IN 270 200 100
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CB-26)
1N3595DHD
CB-102)
/10mA
CB-101)
IN5711
4148 GERMANIUM
IN5818
SMALL SIGNAL SCHOTTKY DIODES DO-35
IN270
CB-26
thomson 5ns
BYV 200
in3595
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ym 238
Abstract: No abstract text available
Text: SGS-THOMSON « ^ f i& IC T lR M Q O S B Y V 1 0 -2 0 -^ 4 0 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featur ing very low foward voltage drop and fast recovery time, intended for low voltage switching mode power
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BYV 200
Abstract: No abstract text available
Text: Æ T SGS-THOMSON [ { » IliO T O R K S B Y V 5 2 -5 0 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES . VERY SM ALL CONDUCTION LOSSES • NEGLIGIBLE SW ITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES . REDUCED SIZE Cathode connected to case D E S C R IP T IO N
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013IF
Abstract: No abstract text available
Text: S T T ^ 7# S G S -T H O M S O N M iœ & ie T fM iG S B Y V 5 4 V -5 0 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • V E R Y S M A L L C O N D U C T IO N LO S S E S . N E G LIG IB LE S W IT C H IN G LO S S E S ■ LO W F O R W A R D A N D R E V E R S E R E C O V E R Y
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Untitled
Abstract: No abstract text available
Text: rz 7 SGS-TUOMSON L iO T « ! ^ 7# 5 B Y V 10 -20 A SMALL SIGNAL SCHOTTKY DIODE D E S C R IP T IO N Metal to silicon rectifier diode in glass case featur ing very low toward voltage drop and fast recovery time, intended for low voltage switch ing mode power
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ByV schottky
Abstract: DIODE 2FL 2fl marking diode sgs-thomson diodes byv 65
Text: Æ T SGS-THOMSON ^ 7 #« HD ê iILI®T®(S R!lûÊi B Y V 1 0 -2 0 -> 4 0 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featu ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode
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7T2T237
ByV schottky
DIODE 2FL
2fl marking diode
sgs-thomson diodes
byv 65
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