BYV 20 Search Results

BYV 200

Abstract: BYV 35 byv ultra Fast Recovery Rectifier
Contextual Info: Lß S A G rlB B ULTRA-FAST-RECOVERY-RECTIFIER DIODES V RRM V Type I I V at I F FA V FSM F (A) (V) (A) (A) rr (ns) T jmax (C) BYV BYV BYV BYV BYV BYV BYV 01-100 01-150 01-200 01-300 01-400 01-500 01-600 100 150 200 300 400 500 600 1.0 1.0 1.0 1.0 1.0 1.0

Diode BYV 95

Abstract: byv 16 BYV 08
Contextual Info: BYV12, BYV 13, BYV 14, BYV 15, BYV 16 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Lead Pb -free component • Compliant to RoHS directive 2002/95/EC and in

BYV 200

Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYW 200

Abstract: diodes byw 92 byw 150 diodes byw 08 200 Thomson-CSF diodes de redressement Diodes de redressement diodes byw CB-34 1250A2s 92200
Contextual Info: h ig h e ffic ie n c y f a s t r e c o v e r y r e c t if ie r d io d e s y THOMSON-CSF diodes de redressement rapide à haut rendement Types •o Vrrm >FSM 10 ms A <V ) (A) Tj = 150° C 35A / Tease = 110°C N N N BYV 92-200 (R) BYV 92-300 (R) BYV 92-400 (R)

BYV32

Abstract: BYV32-100 BYVF32 JESD22-B102D J-STD-002B
Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYV32

Abstract: BYVF32 JESD22-B102D J-STD-002B
Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYVB32-200-E3

Abstract: BYV32 BYVF32 JESD22-B102D J-STD-002B Diode BYV 95
Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYV32-200E

Abstract: Diode BYV 95
Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYV32

Abstract: BYVF32 JESD22-B102 J-STD-002 BYV 35 C BYV 35
Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYV32-150

Abstract: byv 20 BYV32100
Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYV32-200E

Abstract: BYV32 BYVF32 JESD22-B102 J-STD-002 byv325
Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

esja

Abstract: ESJC ESJA82-12 BYV 35 esjc 0309 ESJA 52-12
Contextual Info: Epitaxial Rectifier Diodes A tA = 25°C vF V ~ ¡F = I favm tv, = 25°C • ■ ■ ■ BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design 2x10 2x10 8 150 150 80 < 1,15 < 1,15 < 1,3 Ifsm Ifavm A t=8,3ms tvj = 25°C mA Ir trr outline mA ns < 35

ESJA

Abstract: ESJC
Contextual Info: Epitaxial Rectifier Diodes rrm V Ifa vm V Ifs m BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design Ir trr ns V mA = I fAVM tVJ= 25°C Vr = VHRM 150 150 80 < 1,15 < 1,15 <1,3 <0,6 <0,6 <0,6 V rrm If s m IpAVM kV A t=8,3ms tvj = 25°C mA tA = 25°C

Contextual Info: BYV 10-60  SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forwardvoltagedrop and fastrecovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.

byv 20

Abstract: byv 65
Contextual Info: BYV 10-20 A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.

BYV27 Spice

Abstract: BECKMAN transistor 702m BYV27 BYV27-200 85740
Contextual Info: VISHAY BYV27_Spice Vishay Semiconductors BYV27 Spice Parameters * Technology: DISCRETE DIODE * Device: Rectifier Diode BYV 27 200 * Model established: 04-95, by B. Beckmann, TM1iC63-HN + IS = 34p RS = 213m N = 1.117 IBV= 100p + CJO=114.7p VJ = 702m M = 385m FC = 500m

BYV 200

Abstract: byv 20
Contextual Info: BYV 10-20 A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.

Contextual Info: BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.

ByV schottky

Contextual Info: BYV 10-20 → 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.

BYV25

Contextual Info: FZ 7 SCS-THOMSON »7# BSB eB aiisfE? BOies BYV 255(V -50 —» 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES . VERY SM ALL CONDUCTION LOSSES • NEGLIGIBLE SW ITCHING LOSSES . LOW FORWARD AND REVERSE RECOVERY TIMES ■ INSULATED : capacitance 55pF

byv 20

Contextual Info: BYV 10-20 → 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.

byv 20

Contextual Info: BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.

Contextual Info: BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.