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    BYM 26 Search Results

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    BYM 26 Price and Stock

    Texas Instruments LM285BYMX/NOPB

    Voltage References Adj Micropwr Vtg Ref
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LM285BYMX/NOPB 4,871
    • 1 $1.96
    • 10 $1.32
    • 100 $1.18
    • 1000 $1.04
    • 10000 $0.945
    		Buy Now

    Texas Instruments LM285BYMX-1.2/NOPB

    Voltage References 1.235-V, -40C to +85C, micropower voltage reference diode 8-SOIC -40 to 85
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LM285BYMX-1.2/NOPB 2,313
    • 1 $2.38
    • 10 $1.62
    • 100 $1.45
    • 1000 $1.28
    • 10000 $1.12
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    Texas Instruments LM285BYMX-2.5/NOPB

    Voltage References 2.5-V, -40C to +85C, micropower voltage reference diode 8-SOIC -40 to 85
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LM285BYMX-2.5/NOPB 2,225
    • 1 $2.49
    • 10 $2.49
    • 100 $2.49
    • 1000 $2.22
    • 10000 $1.07
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    Texas Instruments LM285BYM-2.5/NOPB

    Voltage References 2.5-V, -40C to +85C, micropower voltage reference diode 8-SOIC -40 to 85
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LM285BYM-2.5/NOPB 493
    • 1 $2.91
    • 10 $2.18
    • 100 $1.75
    • 1000 $1.58
    • 10000 $1.43
    		Buy Now

    Texas Instruments LM285BYM-1.2/NOPB

    Voltage References 1.235-V, -40C to +85C, micropower voltage reference diode 8-SOIC -40 to 85
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LM285BYM-1.2/NOPB 477
    • 1 $2.8
    • 10 $2.1
    • 100 $1.65
    • 1000 $1.55
    • 10000 $1.55
    		Buy Now
    Find more BYM 26 price and stock on Findchips.com

    BYM 26 Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BYM26 Philips Semiconductors Fast soft-recovery controlled avalanche rectifiers Original PDF
    BYM26A Fagor 200 V, 2.3 A very fast soft recovery glass passivated avalanche diode Original PDF
    BYM26A Galaxy Semi-Conductor Holdings SUPER FAST RECTIFIER Original PDF
    BYM26A Philips Semiconductors Fast Soft-Recovery Controlled Avalanche Rectifier Original PDF
    BYM26A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BYM26A Philips Semiconductors Very Fast Soft Recovery Avalanche Rectifier Diodes Scan PDF
    BYM26AT/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BYM26B Fagor 400 V, 2.3 A very fast soft recovery glass passivated avalanche diode Original PDF
    BYM26B Galaxy Semi-Conductor Holdings SUPER FAST RECTIFIER Original PDF
    BYM26B Philips Semiconductors Fast Soft-Recovery Controlled Avalanche Rectifier Original PDF
    BYM26B Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BYM26B Philips Semiconductors Very Fast Soft Recovery Avalanche Rectifier Diodes Scan PDF
    BYM26BT/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BYM26C Fagor 600 V, 2.3 A very fast soft recovery glass passivated avalanche diode Original PDF
    BYM26C Galaxy Semi-Conductor Holdings SUPER FAST RECTIFIER Original PDF
    BYM26C Philips Semiconductors Fast Soft-Recovery Controlled Avalanche Rectifier Original PDF
    BYM26C Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BYM26C Philips Semiconductors Very Fast Soft Recovery Avalanche Rectifier Diodes Scan PDF
    BYM26C/20 Philips Semiconductors Fast soft-recovery controlled avalanche rectifiers Original PDF
    BYM26C/24 Philips Semiconductors Fast soft-recovery controlled avalanche rectifiers Original PDF

    BYM 26 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CXK5V8257BM

    Abstract: CXK5V8257BTM CXK5V8257BYM
    Text: CXK5V8257BTM/BYM/BM -70LL/10LL 32768-word x 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits.


    Original     		PDF CXK5V8257BTM/BYM/BM -70LL/10LL 32768-word 32768words TSOP-28P-L01R TSOP028-P-0000-B CXK5V8257BTM/BYM/BM CXK5V8257BM CXK5V8257BM CXK5V8257BTM CXK5V8257BYM

    CXK5T8257BM

    Abstract: CXK5T8257BTM CXK5T8257BYM
    Text: CXK5T8257BTM/BYM/BM -10LLX/12LLX 32768-word x 8-bit High Speed CMOS Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK5T8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words


    Original     		PDF CXK5T8257BTM/BYM/BM -10LLX/12LLX 32768-word 32768-words -10LLX 100ns -12LLX 120ns CXK5T8257BM CXK5T8257BTM CXK5T8257BYM

    Untitled

    Abstract: No abstract text available
    Text: BYM-7-50-BYM07-400 EGL34A-EGL34G Surface Mount Glass Passivated Ultrafast Rectifier Reverse Voltage 50 to 400V Forward Current 0.5A Features DO - 213AA • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Capable of meeting environmental standards of


    Original     		PDF BYM-7-50--BYM07-400 EGL34A-EGL34G MIL-S-19500 213AA DO-213AA, EGL34A EGL34D EGL34F EGL34G 50mVp-p

    BYM10-1000

    Abstract: BYM10-50 DO-213AB GL41A GL41Y J-STD-002B RED Color band DIODES GLASS GL41D
    Text: BYM10-50 thru BYM10-1000, GL41A thru GL41Y Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.0 A BYM-50-1000 GL41A-Y VRRM 50 V to 1000 V 50 V to 1600 V IFSM 30 A IR 10 µA VF 1.1 V, 1.2 V


    Original     		PDF BYM10-50 BYM10-1000, GL41A GL41Y BYM-50-1000 GL41A-Y DO-213AB 08-Apr-05 BYM10-1000 DO-213AB GL41Y J-STD-002B RED Color band DIODES GLASS GL41D

    BYM-50-1000

    Abstract: GL41A-Y DO213-AB color band
    Text: BYM10-50 thru BYM10-1000, GL41A thru GL41Y Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.0 A BYM-50-1000 GL41A-Y VRRM 50 V to 1000 V 50 V to 1600 V IFSM 30 A IR 10 µA VF 1.1 V, 1.2 V


    Original     		PDF BYM10-50 BYM10-1000, GL41A GL41Y BYM-50-1000 GL41A-Y DO-213AB MIL-S-19500 J-STD-020C DO213-AB color band

    BYM 260

    Abstract: BYM 96 C BYM10-50 DO-213AB GL41M BYM10-1000 GL41Y BYM10-50 DO-213AB GL41A J-STD-002B
    Text: BYM10-50 thru BYM10-1000, GL41A thru GL41Y Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement


    Original     		PDF BYM10-50 BYM10-1000, GL41A GL41Y MIL-S-19500 J-STD-020C, 2002/95/EC 2002/96/EC DO-213AB 08-Apr-05 BYM 260 BYM 96 C BYM10-50 DO-213AB GL41M BYM10-1000 GL41Y DO-213AB J-STD-002B

    BYM10-1000

    Abstract: BYM10-50 DO-213AB GL41A GL41Y J-STD-002
    Text: BYM10-50 thru BYM10-1000, GL41A thru GL41Y Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement


    Original     		PDF BYM10-50 BYM10-1000, GL41A GL41Y MIL-S-19500 J-STD-020, 2002/95/EC 2002/96/EC DO-213AB 18-Jul-08 BYM10-1000 DO-213AB GL41Y J-STD-002

    BYM 260

    Abstract: BYM10-1000 BYM10-50 DO-213AB GL41A GL41Y J-STD-002
    Text: BYM10-50 thru BYM10-1000, GL41A thru GL41Y Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement


    Original     		PDF BYM10-50 BYM10-1000, GL41A GL41Y MIL-S-19500 J-STD-020, 2002/95/EC 2002/96/EC DO-213AB 08-Apr-05 BYM 260 BYM10-1000 DO-213AB GL41Y J-STD-002

    vishay RGL

    Abstract: BYM 260 BYM11
    Text: BYM11-50 thru BYM11-1000, RGL41A thru RGL41M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 150 ns, 250 ns, 500 ns VF 1.3 V Tj max.


    Original     		PDF BYM11-50 BYM11-1000, RGL41A RGL41M DO-213AB MIL-S-19500 J-STD-020C 08-Apr-05 vishay RGL BYM 260 BYM11

    BYM 96 C

    Abstract: do-213ab solder PAD DIMENSIONS BYM11-1000 BYM11-50 DO-213AB J-STD-002B RGL41A RGL41M BYM11
    Text: BYM11-50 thru BYM11-1000, RGL41A thru RGL41M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique


    Original     		PDF BYM11-50 BYM11-1000, RGL41A RGL41M MIL-S-19500 J-STD-020C, 2002/95/EC 2002/96/EC DO-213AB 08-Apr-05 BYM 96 C do-213ab solder PAD DIMENSIONS BYM11-1000 DO-213AB J-STD-002B RGL41M BYM11

    BYM11-600

    Abstract: BYM11-1000 BYM11-50 DO-213AB J-STD-002 RGL41A RGL41M
    Text: BYM11-50 thru BYM11-1000, RGL41A thru RGL41M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique


    Original     		PDF BYM11-50 BYM11-1000, RGL41A RGL41M MIL-S-19500 J-STD-020, 2002/95/EC 2002/96/EC DO-213AB 08-Apr-05 BYM11-600 BYM11-1000 DO-213AB J-STD-002 RGL41M

    BYM11-1000

    Abstract: BYM11-50 DO-213AB J-STD-002 RGL41A RGL41M
    Text: BYM11-50 thru BYM11-1000, RGL41A thru RGL41M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique


    Original     		PDF BYM11-50 BYM11-1000, RGL41A RGL41M MIL-S-19500 J-STD-020, 2002/95/EC 2002/96/EC DO-213AB 18-Jul-08 BYM11-1000 DO-213AB J-STD-002 RGL41M

    BYM 260

    Abstract: BYM-50-1000 MJ 10100 BYM10-1000 BYM10-50 DO-213AB GL41A GL41Y J-STD-002 do213ab
    Text: BYM10-50 thru BYM10-1000, GL41A thru GL41Y Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement


    Original     		PDF BYM10-50 BYM10-1000, GL41A GL41Y MIL-S-19500 J-STD-020, 2002/95/EC 2002/96/EC DO-213AB BYM 260 BYM-50-1000 MJ 10100 BYM10-1000 DO-213AB GL41Y J-STD-002 do213ab

    BYM10-1000

    Abstract: BYM10-50 DO-213AB GL41A GL41Y BYM 260
    Text: BYM10-50 thru BYM10-1000, GL41A thru GL41Y Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement


    Original     		PDF BYM10-50 BYM10-1000, GL41A GL41Y MIL-S-19500 J-STD-020C, 2002/95/EC 2002/96/EC DO-213AB 08-Apr-05 BYM10-1000 DO-213AB GL41Y BYM 260

    BYM 96 e

    Abstract: DO213-AB color band BYM 260 BYM11-1000 BYM11-50 DO-213AB J-STD-002B RGL41A RGL41M semiconductor band color code
    Text: BYM11-50 thru BYM11-1000, RGL41A thru RGL41M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique


    Original     		PDF BYM11-50 BYM11-1000, RGL41A RGL41M MIL-S-19500 J-STD-020C, 2002/95/EC 2002/96/EC DO-213AB 08-Apr-05 BYM 96 e DO213-AB color band BYM 260 BYM11-1000 DO-213AB J-STD-002B RGL41M semiconductor band color code

    AWPn

    Abstract: JG30 CXK58257B
    Text: SONY CXK58257BTM/BYM/BP/BM -55LL/70LL/10LL 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BYM/BP/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits. A polysilicon TFT cell technology realized extermely


    OCR Scan     		PDF CXK58257BTM/BYM/BP/BM -55LL/70LL/10LL 32768-word 32768words -55LL -70LL -10LL AWPn JG30 CXK58257B

    Untitled

    Abstract: No abstract text available
    Text: SONY | CXK5T8257BTM/BYM/BM -10LLX/12LLX 32768-word x 8-bit High Speed CMOS Static RAM Preliminary Description The CXK5T8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits. Special feature are low power consumption and


    OCR Scan     		PDF CXK5T8257BTM/BYM/BM 32768-word 32768-words 100ns -10LLX -12LLX 120ns

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK5V8257BTM/BYM/BM •70LLX/85LLX*/1 OLLX* 32768-word x 8-bit High Speed CMOS Static RAM * Only TSOP available * * Only SOP available D escription The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits.


    OCR Scan     		PDF CXK5V8257BTM/BYM/BM 70LLX/85LLX 32768-word CXK5V8257BTM/BYM/BM -70LLX -85LLX -10LLX CXK5V8257BM

    Untitled

    Abstract: No abstract text available
    Text: CXK5V8257BTM/BYM/BM -70LL/10LL SO NY 32,768-word x 8-bit High Speed CMOS Static RAM Description The CXK5V8257BTM/BYM/BM is a 262,144-bit high speed CMOS static RAM organized as 32,768-words-by8-bits. A polysilicon TFT cell technology realizes extremely low stand-by current and higher data retention stability.


    OCR Scan     		PDF CXK5V8257BTM/BYM/BM -70LL/10LL 768-word 144-bit 768-words-by8-bits. CXK5V88257BTM/BYM/BM CXK5V8257BTM CXK5V8257BYM TSOP-28P-L01

    cxk58257btm

    Abstract: No abstract text available
    Text: SONY CXK58257BTM/BYM -7 0 L L X /1 0 L L X 32768-word x 8-bit High Speed CMOS Static RAM Description CXK582S7BTM The CXK58257BTM/BYM is 262.144 bits high CXK58257BYM 28 pin TSOP Plastic 28 pin TSOP (Plastic) speed CMOS static RAM organized as 32,768 words by 8 bits.


    OCR Scan     		PDF 32768-word CXK58257BTM/BYM -70LLX/1QLLX CXK58257BTM CXK58257BYM CXK58257BTM/BYM 70LLX 10LLX

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK58257BTM/BYM - 7 0 L L X /1 0 L L X 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BYM is 262.144 bits high speed C M O S static RAM organized as 3 2,768 CXK58257BTM CXK58257BYM 28 pin TSOP Plastic 28 pin TSOP (Plastic)


    OCR Scan     		PDF CXK58257BTM/BYM CXK58257BTM 32768-word CXK58257BTM/BYM CXK58257BYM 70LLX -10LLX 28PINTSOP

    CXK58257bp

    Abstract: cxk58257bym CXK58257b
    Text: SONY CXK58257BTM/BYM/BP/BM - 5 5 L L /7 0 L L /1 0 L L 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BYM/BP/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits. A poiysilicon TFT cell technology realized extermely


    OCR Scan     		PDF CXK58257BTM/BYM/BP/BM-55UU70LU10LL 32768-word CXK58257BTM/BYM/BP/BM 32768-words CXK58257BTM/BYM/BP/BM -55LL -70LL -10LL 100ns CXK58257bp cxk58257bym CXK58257b

    E3224

    Abstract: E3166 2E3224
    Text: SIEMENS Alphanumerisches Bestellnummernverzeichnis Ordering Codes in Alphanumerical Order Ordering Code Type Page C67067-A2900-A70 BYM 300 A 120 DN 2 411 C67070-A2006-A70 BSM 200 GA 120 DN 2 S 381 C67070-A2017-A70 BSM 300 GA 120 DN 2 S 391 C67070-A2007-A70


    OCR Scan     		PDF C67067-A2900-A70 C67070-A2006-A70 C67070-A2017-A70 C67070-A2007-A70 C67070-A2107-A70 C67070-A2111-A70 C67070-A2120-A67 C67070-A2300-A70 C67070-A2301-A70 C67070-A2302-A70 E3224 E3166 2E3224

    DIODE bym26c

    Abstract: bym260 BYM26D BYM26 diode BYM26B BYM26C BYM26G BYM26 BYM26A BYM26E
    Text: N AMER PHILIPS/DISCRETE T> blE bbS3T31 00E7G1S P h ilip s S e m ic o n d u c to rs P ro d u c t s p e c ific a tio n Very fas t so ft-reco very avalanche rectifier d iodes FEA TUR ES • N o n-sna p-off soft- recovery sw itching ch aracteristics • C apability of absorbing reverse


    OCR Scan     		PDF bbS3T31 00E7G1S BYM26 BYM26A BYM26B BYM26C BYM26DCharacteristics DIODE bym26c bym260 BYM26D BYM26 diode BYM26G BYM26E