9641 SMD
Abstract: BYG21 BYG21K BYG21M
Text: BYG21 Fast Silicon Mesa SMD Rectifier Features D D D D D D Glass passivated junction Low reverse current Soft recovery characteristics Fast reverse recovery time Good switching behaviour Wave and reflow solderable Applications Surface mounting Fast rectifier
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BYG21
BYG21K
BYG21M
D-74025
24-Jun-96
9641 SMD
BYG21
BYG21K
BYG21M
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PDF
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smd diode UM 09
Abstract: diode SMD t01 byg21 diode vishay smd diode UM
Text: BYG21 VISHAY Vishay Semiconductors Fast Avalanche SMD Rectifier Features • • • • • • Glass passivated junction Low reverse current Soft recovery characteristics Fast reverse recovery time Good switching characteristics Wave and reflow solderable
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BYG21
BYG21K
BYG21M
rep75
125K/W
09-Oct-00
smd diode UM 09
diode SMD t01
byg21 diode
vishay smd diode UM
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16429
Abstract: BYG21 BYG21K BYG21M
Text: BYG21 Vishay Telefunken Fast Silicon Mesa SMD Rectifier Features D D D D D D Glass passivated junction Low reverse current Soft recovery characteristics Fast reverse recovery time Good switching characteristics Wave and reflow solderable 15 811 Applications
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Original
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BYG21
BYG21K
BYG21M
D-74025
27-Sep-00
16429
BYG21
BYG21K
BYG21M
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PDF
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BYG21
Abstract: BYG21K BYG21M
Text: BYG21 VISHAY Vishay Semiconductors Fast Avalanche SMD Rectifier Features • • • • • • Glass passivated junction Low reverse current Soft recovery characteristics Fast reverse recovery time Good switching characteristics Wave and reflow solderable
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Original
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BYG21
BYG21K
DO-214AC
BYG21M
08-Apr-05
BYG21
BYG21K
BYG21M
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PDF
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50MM2
Abstract: BYG21 BYG21K BYG21M
Text: BYG21 Vishay Telefunken Fast Silicon Mesa SMD Rectifier Features D D D D D D Glass passivated junction Low reverse current Soft recovery characteristics Fast reverse recovery time Good switching characteristics Wave and reflow solderable 15 811 Applications
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Original
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BYG21
D-74025
24-Jun-98
50MM2
BYG21
BYG21K
BYG21M
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PDF
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BYG21
Abstract: BYG21K BYG21M
Text: BYG21 Vishay Semiconductors Fast Silicon Mesa SMD Rectifier Features D D D D D D Glass passivated junction Low reverse current Soft recovery characteristics Fast reverse recovery time Good switching characteristics Wave and reflow solderable 15 811 Applications
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Original
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BYG21
BYG21K
BYG21M
D-74025
27-Sep-00
BYG21
BYG21K
BYG21M
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PDF
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BYG21
Abstract: BYG21K BYG21M
Text: BYG21 Vishay Semiconductors Fast Avalanche SMD Rectifier Features • • • • • • Glass passivated junction Low reverse current Soft recovery characteristics Fast reverse recovery time Good switching characteristics Wave and reflow solderable DO-214AC SMA
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Original
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BYG21
DO-214AC
BYG21K
BYG21M
BYG210
15-Sep-04
BYG21
BYG21K
BYG21M
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PDF
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BYG21
Abstract: BYG21K BYG21M 9641 SMD MKL cond
Text: BYG21 TELEFUNKEN Semiconductors Fast Silicon Mesa SMD Rectifier Features D Glass passivated junction D Low reverse current D Soft recovery characteristics D Fast reverse recovery time D Good switching behaviour D Wave and reflow solderable Applications 94 3535
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BYG21
BYG21K
BYG21M
D-74025
BYG21
BYG21K
BYG21M
9641 SMD
MKL cond
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PDF
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949m5
Abstract: No abstract text available
Text: Te m ic BYG21 TELEFUNKEN Semiconductors Fast Silicon Mesa SMD Rectifier Features • G lass passivated junction • L ow reverse current • Soft recovery characteristics • Fast reverse recovery time • G ood sw itching behaviour • Wave and reflow solderable
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OCR Scan
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BYG21
BYG21M
949m5
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PDF
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Untitled
Abstract: No abstract text available
Text: Tem ic BYG21 S e m i c o n d u c t o r s Fast Silicon Mesa SMD Rectifier Features • Glass passivated junction • Low reverse current • Soft recovery characteristics • Fast reverse recovery time • Good switching behaviour • Wave and reflow solderable
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OCR Scan
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BYG21
BYG21K
BYG21M
24-Jun-96
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PDF
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Untitled
Abstract: No abstract text available
Text: _BYG21 Vishay Telefunken ▼ Fast Silicon Mesa SMD Rectifier Features • G lass passivated junction • Low reverse current • Soft recovery characteristics • Fast reverse recovery tim e • Good sw itching behaviour • W ave and reflow solderable
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OCR Scan
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BYG21
BYG21
BYG21M
D-74025
24-Jun-98
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PDF
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RECTIFIER DIODE 5A, 2500V VRRM
Abstract: DO220 transistor smps high voltage Diode BYT42 M byv26 smd MARK smd diode general semiconductor byv26 germanium rectifier diode photo thyristor tunnel diode
Text: Vishay Telefunken General Information Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example:
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PINHD-1X1
Abstract: CPOL-EU NCN1520 LPC122XFBD48 C-EUC0805K
Text: AN11231 KNX evaluation board using LPC1227 and NCN5120 Rev. 1 — 1 July 2012 Application note Document information Info Content Keywords KNX, LPC1227, On Semiconductor NCN5120, Weinzierl Engineering GmbH, Building Automation, Sensors, HVAC, Lighting, ARM Cortex M0,
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AN11231
LPC1227
NCN5120
LPC1227,
NCN5120,
OM13042
NCN5120
PINHD-1X1
CPOL-EU
NCN1520
LPC122XFBD48
C-EUC0805K
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PDF
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Untitled
Abstract: No abstract text available
Text: E981.03 KNX/ EIB TRANSCEIVER PRODUCTION DATA - JUL 26, 2013 Key Features Included power supplies: ÿÿ ÿÿ ÿÿ ÿÿ ÿÿ 20V supply, up to 20mA ÿÿ 3.3V 70mA / 5V (70mA) DC/DC converter Certified with KNX TP1-256 application Autonomous MAC and individual physical address
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TP1-256
25DS0046E
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