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    BY250 DIODE Search Results

    BY250 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    BY250 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODES BY250

    Abstract: BY250 by250 diode BY255 BY251
    Text: BY251 . BY255 3 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-201AD Plastic Voltage 200 to 1300 V. Current 3.0 A. at 50°C. 9.1 ± 0.3 62.5 ± 0.5 • Low cost Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.


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    PDF BY251 BY255 DO-201AD BY250 DIODES BY250 BY250 by250 diode BY255 BY251

    by250 diode

    Abstract: diode RGP30 ultraFast Recovery Bridge Rectifier zener alternator rectifier zy zener rgp10 Diode rgp10 BA150 DIODES BY250 BY250
    Text: End Applications AUTOMOTIVE END APPLICATION ALTERNATOR POWER STEERING AIR BAG IF 3A 3A 1A 5KW INSTRUMENT PANEL 1A DASHBOARD 1.5A 3A 1.3W, 2W 1.5KW, 5KW ABS SYSTEM 1A 1A, 1.5A 1.3W, 2W 400W÷ 5KW ANTI THEFT DEVICES 1A 1.3W, 2W 400W LIGHT CONTROL 1.3W ENGINE CONTROL


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    PDF BY250, 1N5400, 1N5620GP 1N4000GP, 1N5390, BZX85C, MR2520 EGP10, by250 diode diode RGP30 ultraFast Recovery Bridge Rectifier zener alternator rectifier zy zener rgp10 Diode rgp10 BA150 DIODES BY250 BY250

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    DIODES BY250

    Abstract: BY250 by250 diode N4001 diode n4005 n4007 diode IN5396 1N4001 diodes 1N4001 1N4005
    Text: S E M I C O N D U C T O R S INC DTE D | fllBbbSG □ □ □ □ 2 5 3 ñ | • f - ô t - f S ' Silicon Rectifier Diodes The plastic material carries U/L recognition 94V-0. OPERATING AN D STORAGE TEMPERATURE - 5 0 to +175 °C BY250 Series: - 5 0 to +150°C


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    PDF BY250 1N4001 1N4002 11M4003 11VI4004 1N4005 1N4006 11M4007 1N5400 DO-27A. DIODES BY250 by250 diode N4001 diode n4005 n4007 diode IN5396 diodes 1N4001

    DIODES BY250

    Abstract: BY250 BY251-BY255
    Text: H tG O R ^ BY251.BY255 3 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-201 AD Plastic Voltage 200 to 1.300 V. G 1— 1 6 2 .5 Current 3.0 A. at 50°C. 6 • Low cost Mounting instructions 1. Min. distance from body to soldering point, 4 mm.


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    PDF DO-201 BY251. BY255 BY250 DIODES BY250 BY251-BY255

    BY250

    Abstract: IN4000 silicon diode DIODES BY250 1N4000 silicon diodes IN5395 in4000 1N5409 by250 diode in5404 diode diode IN5399
    Text: E I C S E M I C O N D U C T O R INC bflE D • ‘iOOSMTT O a O O a i O 142 ■ EICS Silicon rectifier diodes 1 Amp. to 3 Amps. T he p lastic m ate ria l c a r r ie s U /L re co g n itio n 94V-0. A v e ra g e R ectified C u rre n t Peak In v e rse V oltage


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    PDF T00SM71 1N4000 DO-41. 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 BY250 IN4000 silicon diode DIODES BY250 1N4000 silicon diodes IN5395 in4000 1N5409 by250 diode in5404 diode diode IN5399

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


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    PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82

    SN72710L

    Abstract: MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm
    Text: 27-18 LH 0002 C LH 0002 CN 586-81! .587-270 AMPEX CURRENT A M PLIFIE R IN PUT 27-18 AMPEX REV 111 NH 0005C 586-495 D AC08CZ 587-896 27 + R ef | 1_ O PE R ATIO N AL A M PLIFIE R 8 BIT D -A CONVERTER 2" 14 13 12 11 6 5 4 1I i i i i i 3 1 13 , +12V So-4


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    PDF LH0002C LH0002CN NH0005C DAC08CZ NH0014C DH0034 78M12HC MMH0026CG 79M12AHC 75460BP SN72710L MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


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    PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


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    PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367