by 550-50 diode
Abstract: No abstract text available
Text: BY 550-50.BY 550-1000 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module -2 Axial lead diode Standard silicon rectifier diodes BY 550-50.BY 550-1000 8 9 3 9 9
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Abstract: No abstract text available
Text: BY 550-50.BY 550-1000 -2 Axial lead diode Standard silicon rectifier diodes BY 550-50.BY 550-1000 8 9 3 9 9 * 0* 3 9 9 * 9 9 2 => %%$% => %%$+ => %%$ => %%$" => %%$ => %%$? #88 # % +
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Untitled
Abstract: No abstract text available
Text: BY 550-50.BY 550-1000 -2 Axial lead diode Standard silicon rectifier diodes BY 550-50.BY 550-1000 8 9 3 9 9 * 0* 3 9 9 * 9 9 2 => %%$% => %%$+ => %%$ => %%$" => %%$ => %%$? #88 # % +
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by 550-50 diode
Abstract: No abstract text available
Text: BY 550-50.BY 550-1000 -2 Axial lead diode Standard silicon rectifier diodes BY 550-50.BY 550-1000 8 9 3 9 9 * 0* 3 9 9 * 9 9 2 => %%$% => %%$+ => %%$ => %%$" => %%$ => %%$? #88 # % +
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NX8509
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NX8509 Series 1 550 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX8509 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode coaxial module with an internal optical isolator.
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NX8509
STM-16
OC-48
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BY550
Abstract: BY550-1000 BY550-50
Text: BY550-50 . BY550-1000 5 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-201AD Plastic Voltage 50 to 1000 V. Current 5.0 A. at 60°C. 9.1 ± 0.3 62.5 ± 0.5 • Low cost Mounting instructions 1. Min. distance from body to soldering point, 4 mm.
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BY550-50
BY550-1000
DO-201AD
BY550
BY550
BY550-1000
BY550-50
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hz nec
Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8503BG-CC NX8503CG-CC 10 gb laser diode
Text: DATA SHEET LASER DIODE NX8503BG-CC,NX8503CG-CC 1 550 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 156 Mb/s, 622 Mb/s DESCRIPTION The NX8503BG-CC and NX8503CG-CC are 1 550 nm Multiple Quantum Well MQW structured Distributed FeedBack (DFB) laser diode coaxial modules with single mode fiber.
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NX8503BG-CC
NX8503CG-CC
NX8503CG-CC
hz nec
NX8300BE-CC
NX8300CE-CC
NX8303BG-CC
NX8303CG-CC
NX8304BE-CC
10 gb laser diode
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superlattice avalanche
Abstract: NR3470MU-CC NR4270MU-CC NR4500BP-CC NR4500CP-CC NR7500 STM-16 STM-64 10 gb PIN receiver 10 gb APD receiver
Text: DATA SHEET RECEIVER NR4270MU-CC SUPERLATTICE APD RECEIVER WITH SINGLE MODE FIBER INTERNAL PREAMPLIFIER FOR 10 Gb/s APPLICATIONS DESCRIPTION The NR4270MU-CC is a 10 Gb/s superlattice avalanche photo diode APD receiver in a 17-pin mini-butterfly package with an internal preamplifier.
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NR4270MU-CC
NR4270MU-CC
17-pin
OC-192
STM-64,
OC-192)
superlattice avalanche
NR3470MU-CC
NR4500BP-CC
NR4500CP-CC
NR7500
STM-16
STM-64
10 gb PIN receiver
10 gb APD receiver
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BFY 99
Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8304CE-CC NX8503BG-CC NX8508 BFY10
Text: PRELIMINARY DATA SHEET LASER DIODE NX8508 Series 1 470 TO 1 610 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s, CWDM DESCRIPTION The NX8508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode coaxial module with an
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NX8508
BFY 99
NX8300BE-CC
NX8300CE-CC
NX8303BG-CC
NX8303CG-CC
NX8304BE-CC
NX8304CE-CC
NX8503BG-CC
BFY10
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tunable laser diode
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NX8508 Series 1 470 TO 1 610 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s, CWDM DESCRIPTION The NX8508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode coaxial module with an
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NX8508
tunable laser diode
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NX8300BE-CC
Abstract: NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8304CE-CC NX8503BG-CC NX8563LA NX8563LAS
Text: DATA SHEET LASER DIODE NX8563LA Series 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE 2.5 Gb/s DIRECTLY MODULATION LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LA Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Single Mode
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NX8563LA
NX8300BE-CC
NX8300CE-CC
NX8303BG-CC
NX8303CG-CC
NX8304BE-CC
NX8304CE-CC
NX8503BG-CC
NX8563LAS
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electroabsorption
Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8503BG-CC NX8503CG-CC NX8560LJ-CC 10 gb laser diode
Text: PRELIMINARY DATA SHEET LASER DIODE NX8560LJ-CC EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s APPLICATIONS DESCRIPTION The NX8560LJ-CC is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode. It is capable of transmitting up to 40 km for 10 Gb/s applications
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NX8560LJ-CC
NX8560LJ-CC
electroabsorption
NX8300BE-CC
NX8300CE-CC
NX8303BG-CC
NX8303CG-CC
NX8503BG-CC
NX8503CG-CC
10 gb laser diode
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10 gb laser diode
Abstract: k 2545 NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8340MD NX8340MD-CC NX8340ME stm 64 laser diode 19pin
Text: PRELIMINARY DATA SHEET LASER DIODE NX8340 Series 1 310 nm MQW-DFB LASER DIODE MODULE WITH DRIVER FOR 10 Gb/s APPLICATIONS DESCRIPTION The NX8340 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with an internal
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NX8340
NX8340MD
19-pin
NX8340ME
10 gb laser diode
k 2545
NX8300BE-CC
NX8300CE-CC
NX8303BG-CC
NX8303CG-CC
NX8340MD
NX8340MD-CC
NX8340ME
stm 64 laser diode 19pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NX8508 Series 1 470 TO 1 610 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s, CWDM DESCRIPTION The NX8508 Series are 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode coaxial modules with an
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Untitled
Abstract: No abstract text available
Text: DA9250.002 11 June 2004 MAS9250 High Efficiency Synchronous Step-Down Switching Regulator • Efficiency up to 93% • Switching Frequency from 400 kHz to 2 MHz • No Schottky Diode Required • PWM, PFM and PSK Operations • Low Dropout Operation: 100% Duty Cycle
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DA9250
MAS9250
MAS9250
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NX8300CE-CC
Abstract: NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8504BE-CC NX8504CE-CC NX8300BE-CC
Text: DATA SHEET LASER DIODE NX8504BE-CC,NX8504CE-CC 1 550 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 622 Gb/s DESCRIPTION The NX8504BE-CC and NX8504CE-CC are 1 550 nm Multiple Quantum Well MQW structured Distributed FeedBack (DFB) laser diode coaxial modules with an internal optical isolator.
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NX8504BE-CC
NX8504CE-CC
NX8504CE-CC
NX8300CE-CC
NX8303BG-CC
NX8303CG-CC
NX8304BE-CC
NX8300BE-CC
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l42 DIODE
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8503BG-CC,NX8503CG-CC 1 550 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 156 Mb/s, 622 Mb/s DESCRIPTION The NX8503BG-CC and NX8503CG-CC are 1 550 nm Multiple Quantum Well MQW structured Distributed FeedBack (DFB) laser diode coaxial modules with single mode fiber.
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NX8503BG-CC
NX8503CG-CC
NX8503CG-CC
l42 DIODE
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BAP63-01
Abstract: BAP64-03 bap50-05 1SV308 replacement BAP64 BAP64-06W Diode RN731V BAP50-04 HSMP-3893 BAP70-02 equivalent
Text: Philips Semiconductors PIN diodes designed for RF applications up to 3 GHz Philips Semiconductors’ PIN diodes are designed for RF applications up to 3 GHz. Supplied in highly compact packaging, they allow for significant board-size reduction and hence smaller, lighter mobile
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BFY-22
Abstract: NX8566LE303-CC NX8566LE311-CC NX8566LE318-CC NX8566LE326-CC NX8566LE334-CC NX8566LE342-CC NX8566LE350-CC NX8566LE-CC KM1225
Text: DATA SHEET LASER DIODE NX8566LE-CC EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM LONG-REACH 240 km APPLICATIONS DESCRIPTION The NX8566LE-CC is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW)
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NX8566LE-CC
NX8566LE-CC
BFY-22
NX8566LE303-CC
NX8566LE311-CC
NX8566LE318-CC
NX8566LE326-CC
NX8566LE334-CC
NX8566LE342-CC
NX8566LE350-CC
KM1225
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Untitled
Abstract: No abstract text available
Text: BY 550-50.-1000 Silizium Gleichrichter Silicon Rectifier 5A Nominal current Nennstrom 50. 1000 V Repetitive peak reverse voltage Periodische Spitzensperrspannung 0 5.6 x 7.5 [mm] Plastic case Kunststoffgehäuse Weight approx. Gewicht ca. 1.4 g Plastic material has UL classification 94V-0
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UL94V-0
R0D1RS14
DGG174
000017S
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Untitled
Abstract: No abstract text available
Text: FAGO R^ BY550-50.BY550-1000 5 Amp. Silicon Rectifier Diodes D im en sio n s in mm. D O -20IA D Plastic 1 1 — Voltage 50 to 1.000 V. 1 Current 5.0 A. at 60°C. 62.S 1O.5 • Low cost Mounting instructions 1. Min. distance from body to soldering point,
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-20IA
BY550-50.
BY550-1000
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Diode 1N4007 DO-7 Rectifier Diode
Abstract: 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55
Text: Diodes Rectifier and Avalanche diodes Type BY 202 BY 203 BY 204 Maximum ratings Notes Characteristics V 4 8006 90 <300 £ 1 .0 200 £ 507) Contact protection diode 2 5 1000') 200 £100 £ 1 .2 1000 £ 3503) Fast rectifier diodes 3 5 1000') 300 £100 <1.2
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BAX12
F1000
1N4001
1N4002
1N4003
1N4004
1N4006
1N4007
Diode 1N4007 DO-7 Rectifier Diode
1N40075
BYX/400
1N4007 RECTIFIER DIODE
4007 uf 1200
BAX12
BYW52
BYW53
BYW54
BYW55
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TAA550
Abstract: ac voltage stabilizer circuit diagram TAA550B TBA271B tba 150 A TAA 550 TAA550 3 taa550a stabiliser circuit diagram tba 271
Text: LINEAR INTEGRATED C I R C U I T TAA550 TBA 271 VOLTAGE STABILIZER • LOW TEMPERATURE COEFFICIENT • LOW ZENER RESISTANCE The TAA 550/TBA 271 Is a m onolithic integrated voltage stab ilize r in a TO -18 two pins metal case. It is especially designed as voltage sup plier for varicap diodes in television
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TAA550
550/TBA
TAA550
ac voltage stabilizer circuit diagram
TAA550B
TBA271B
tba 150 A
TAA 550
TAA550 3
taa550a
stabiliser circuit diagram
tba 271
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lM5140
Abstract: 1H1401
Text: Series 1H1401 - 1*1412 1M6520 - 1M6525 1M5461A-1M5476A SURFACE MOUNT TUNING DIODES Many popular axial leaded glaee packaged tuning diode types are now available in the MSI 1M Case for surface mount assemblies. The tuning diode chips, mounted on high density alumina substrates, are epoxy coated to
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1N5139
spM514T
1M5140
C4/C60
1M5696A
1K5697A
1M5699A
IK5700A
1M5701A
lM5140
1H1401
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