IGBT. CM50TF-12H
Abstract: CM50TF-12H
Text: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of
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CM50TF-12H
IGBT. CM50TF-12H
CM50TF-12H
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bvp DIODE
Abstract: 30-HV CM15TF-24H 7294b21 BWP 34
Text: m N BG X CM15TF-24H Powarex, inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 SiXm /GBT IGBTMOD H-Series Module 15 Amperes/1200 Volts - O 8oP EuP D D BvP EvP BwP EwP S - DIA— (2 TYP.) I I e d -N — H ff TM L Description: Powerex IGBTMOD™ Modules are
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CM15TF-24H
Amperes/1200
lc-15A
CU15TF-24H
72T4b21
bvp DIODE
30-HV
CM15TF-24H
7294b21
BWP 34
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE •A -B■C BuPEuP BvPEvP TT E D LJ: S - DIA. 2 TYP. r — M - r r 1— F■ Description: R (BuP) I GuPo— I I ± ^ (BvP) GvPo— I L ^ (BwP) I GwPo— I EuP" EvP « EwP = u»—
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CM50TF-12H
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CM30TF-24H
Abstract: igbt 600V 30A
Text: MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R L K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of
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CM30TF-24H
CM30TF-24H
igbt 600V 30A
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BUN DIODE
Abstract: DIODE EVP 28 CM50TF-12H bup transistor
Text: CM50TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 50 Amperes/600 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M BwN EwN F R F R K R
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CM50TF-12H
Amperes/600
20-25kHz)
BUN DIODE
DIODE EVP 28
CM50TF-12H
bup transistor
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Untitled
Abstract: No abstract text available
Text: # w m s CM30TF-12H r Powerex, Inc., 200Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 S¡X~IGBT IGBTMOD H-Series Module 30 Amperes/600 Volts BuP EuP BvP EvP BwP EwP 50 4 0 ^ 0 4 r -1 S - DIA— (2 TYP.) BuN EuN i - i B w N E vN r-i — K— — H-
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CM30TF-12H
200Hillis
Amperes/600
00cne43
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CM50TF-12H
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of
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CM50TF-12H
CM50TF-12H
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600v 30a IGBT
Abstract: CM30TF-24H IGBT 1200V 60A
Text: MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R L K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of
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CM30TF-24H
600v 30a IGBT
CM30TF-24H
IGBT 1200V 60A
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BUN DIODE
Abstract: 600v 20a IGBT igbt 600v 20a CM20TF-24H
Text: CM20TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 20 Amperes/1200 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E
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CM20TF-24H
Amperes/1200
BUN DIODE
600v 20a IGBT
igbt 600v 20a
CM20TF-24H
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BUN DIODE
Abstract: 400v 15A transistor module DIODE EVP 25 400v 15A igbt module 600v 30a IGBT CM15TF-24H
Text: CM15TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 15 Amperes/1200 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E
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CM15TF-24H
Amperes/1200
BUN DIODE
400v 15A transistor module
DIODE EVP 25
400v 15A igbt module
600v 30a IGBT
CM15TF-24H
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BUN DIODE
Abstract: BUP 304 600v 30a IGBT BUP 300 CM30 bup 304 equivalent bup 77 CM30TF-12H H bridge 300v 30a 12A1000
Text: CM30TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/600 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E
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CM30TF-12H
Amperes/600
BUN DIODE
BUP 304
600v 30a IGBT
BUP 300
CM30
bup 304 equivalent
bup 77
CM30TF-12H
H bridge 300v 30a
12A1000
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600v 30a IGBT
Abstract: BUN DIODE CIRCUIT DIAGRAM UPS welding circuit diagram CM30TF-24H DIODE EVP 25 igbt 30A
Text: CM30TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/1200 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M F R BwN EwN F R L K
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CM30TF-24H
Amperes/1200
600v 30a IGBT
BUN DIODE
CIRCUIT DIAGRAM UPS
welding circuit diagram
CM30TF-24H
DIODE EVP 25
igbt 30A
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BUN DIODE
Abstract: No abstract text available
Text: m u m ex Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 |- U BuP EuP U BvP EvP D 8wP EwP l ;-G 4 o O n n 0 4 n n - m S - DIA— (2 TYP.) BuN BuN E EuN i—i BvN EvN r—I — K- CM20TF-24H SÍX-IGBT IGBTMOD H-Series Module
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CM20TF-24H
Amperes/1200
BUN DIODE
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bvp DIODE
Abstract: marKing CA2 sot-23 CMPD2836 CMPD2838
Text: Central" CMPD2836 CMPD2838 Semiconductor Corp. DUAL SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2836, CMPD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for
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CMPD2836
CMPD2838
CMPD2836,
CMPD2838
OT-23
100mA
bvp DIODE
marKing CA2 sot-23
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Untitled
Abstract: No abstract text available
Text: Central” CMPD7000E Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT DUAL PAIR OF SERIES CONFIGURED SILICON SWITCHING DIODES DESCRIPTION: The Central Semiconductor CMPD7000E is an Enhanced version of the CMPD7000 Dual, Series Configuration, Ultra-High Speed
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CMPD7000E
CMPD7000
OT-23
13-November
CMPD7000E
OT-23
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marking 321 sot-23
Abstract: No abstract text available
Text: Central' CMPD914E Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD914E is an Enhanced version of the CMPD914 High Speed Switching Diode in a SOT-23 surface mount package, designed for high speed applications.
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CMPD914E
CMPD914
OT-23
CPD63
OT-23
marking 321 sot-23
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ED marking code diode
Abstract: D95E
Text: Central“ CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE Semiconductor Corp. EN H A N C E D SPECIFICATIO N DESCRIPTION: SURFACE MOUNT SILICON SCHOTTKY DIODES The CENTRAL SEMICONDUCTOR CMPSH-3E Series types are Enhanced Versions of the CMPSH-3 Series of Silicon Schottky Diodes in an
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OT-23
OT-23
ED marking code diode
D95E
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Untitled
Abstract: No abstract text available
Text: Low Cost, Precision Analog Front End and Controller for Battery Test/Formation Systems AD8451 Data Sheet FEATURES GENERAL DESCRIPTION Integrated constant current and voltage modes with automatic switchover Charge and discharge modes Precision voltage and current measurement
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AD8451
AD8451
51706-A
MS-026-BEC
80-Lead
ST-80-2)
AD8451ASTZ
AD8451ASTZ-RL
AD8451-EVALZ
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qf30aa60
Abstract: QF30AA40 IC 7403
Text: TRANSISTOR MODULE（THREE PHASES BRIDGE TYPE） QF30AA40/60 QF30AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from
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QF30AA40/60
QF30AA
VCEX400/600V
TAB110
IC30A,
VCC300V
qf30aa60
QF30AA40
IC 7403
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all transistor
Abstract: E80276 QM30TB-24B bvp DIODE
Text: MITSUBISHI TRANSISTOR MODULES QM30TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-24B • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 750
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QM30TB-24B
E80276
E80271
all transistor
E80276
QM30TB-24B
bvp DIODE
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E80276
Abstract: QM30TB-2H all transistor
Text: MITSUBISHI TRANSISTOR MODULES QM30TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-2H • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75
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QM30TB-2H
E80276
E80271
E80276
QM30TB-2H
all transistor
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all transistor
Abstract: E80276 QM30TF-HB
Text: MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TF-HB • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 600V hFE DC current gain. 750
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QM30TF-HB
E80276
E80271
all transistor
E80276
QM30TF-HB
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IC 7403
Abstract: QF50AA40 QF50AA60 transistor bw 51
Text: TRANSISTOR MODULE（THREE PHASES BRIDGE TYPE） QF50AA40/60 QF50AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from
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QF50AA40/60
QF50AA
VCEX400/600V
TAB110
IC50A,
IC 7403
QF50AA40
QF50AA60
transistor bw 51
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Untitled
Abstract: No abstract text available
Text: niCROPAC I N D U S T R I E S IN C 42 E D b l l 2 b 40 OOOQTQti 1 B B H PI GaAs LIGHT-EMITTING DIODE “ PIGTAIL” 62017 TYPE GS 3040 \ •H IG H INTENSITY GaAIAs VERSION AVAILABLE MINIATURE HIGH EFFICIENCY LED WITH NARROW BEAM ANGLE GLASS/METAL WELDED PACKAGE
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MIL-S-19500.
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