Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP9970GP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Low On-resistance 60V RDS ON Fast Switching Performance G ID RoHS-compliant, halogen-free 3.2mΩ 240A S Description Advanced Power MOSFETs from APEC provide the designer with the best
|
Original
|
PDF
|
AP9970GP-HF-3
AP9970GP-HF-3
O-220
O-220
AP9970
9970GP
|
Space Level Flow HR500S Axial and Surface Mount
Abstract: High-Rel Discrete Semiconductors 4011 HR500 water transfer IR 4011 SEMTECH LABEL TFR 600 IR 4065 RR HTRB
Text: 2010 Catalog High-Rel Discrete Semiconductors Assembly Products Semtech Space Level Flow HR500S Axial and Surface Mount Packages W W W .SE MTE C H .C O M 2010 Catalog Semtech Space Level Flow HR500S Axial and Surface Mount Packages Table of Contents HR500S Axial Lead Package
|
Original
|
PDF
|
HR500S
HR500S
Mil-PRF-19500
HR500S-PDA2010
Space Level Flow HR500S Axial and Surface Mount
High-Rel Discrete Semiconductors
4011
HR500
water transfer
IR 4011
SEMTECH LABEL
TFR 600
IR 4065 RR
HTRB
|
179050
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Frequency Mixer - ZX05-17H Frequency Mixers Notes: • Maximum Ratings: Operating Temperature: -55°C to 100°C Storage Temperature: -55°C to 100°C print this page ZX05-17H • Phase detection, negative LO Power Level 17 dBm
|
Original
|
PDF
|
ZX05-17H
200mW
179050
|
MM 4054
Abstract: 64926
Text: Mini-Circuits - Specification for Voltage Controlled Oscillator - MOS-EDR5653 Voltage Controlled Oscillator Notes: • For Surface Mount Environmental Specifications, please click here. Re-flow soldering information is available in "Surface Mount" article.
|
Original
|
PDF
|
12dBr.
MOS-EDR5653
MM 4054
64926
|
67249
Abstract: 62432 64082 62722 63940
Text: Mini-Circuits - Specification for Voltage Controlled Oscillator - ROS-ED8975/2 Voltage Controlled Oscillator Notes: • For Surface Mount Environmental Specifications, please click here. Re-flow soldering information is available in "Surface Mount" article.
|
Original
|
PDF
|
ROS-ED8975/2
67249
62432
64082
62722
63940
|
62039
Abstract: 509-19 60728 42596
Text: Mini-Circuits - Specification for Voltage Controlled Oscillator - ROS-ED9807/1 Voltage Controlled Oscillator Notes: • For Surface Mount Environmental Specifications, please click here. Re-flow soldering information is available in "Surface Mount" article.
|
Original
|
PDF
|
ROS-ED9807/1
62039
509-19
60728
42596
|
60723
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Voltage Controlled Oscillator - ROS-EDR4758 Voltage Controlled Oscillator Notes: • For Surface Mount Environmental Specifications, please click here. Re-flow soldering information is available in "Surface Mount" article.
|
Original
|
PDF
|
ROS-EDR4758
60723
|
66113
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Voltage Controlled Oscillator - ROS-ED8381/2 Voltage Controlled Oscillator Notes: • For Surface Mount Environmental Specifications, please click here. Re-flow soldering information is available in "Surface Mount" article.
|
Original
|
PDF
|
ROS-ED8381/2
66113
|
64290
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Voltage Controlled Oscillator - ROS-ED6757/2 Voltage Controlled Oscillator Notes: • For Surface Mount Environmental Specifications, please click here. Re-flow soldering information is available in "Surface Mount" article.
|
Original
|
PDF
|
ROS-ED6757/2
64290
|
Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Frequency Mixer - HJK-ED9560/1 Frequency Mixers Notes: • Non-catalog model. Please consult factory for price and delivery. • For Surface Mount print this page Environmental Specifications, please click here. LO Power Level 17 dBm
|
Original
|
PDF
|
HJK-ED9560/1
643-lick
|
QQ-S-696
Abstract: No abstract text available
Text: 4 3 1 2 Dl ST AR BV AMP INCORPORATED. 34 □Ës;fliprjoN O B S OLE TED CONNECTOR DESIGNED FOR 28 AND 26 CONDUCTOR RI BBON C AB LE ON .05 0$ . DIMENS ION APPLIES MOLDED P A RT S, SH EL L : STEEL CONTACTS, TIN-LEAD PER BR IG HT EC 03/09/as LG DK 0020-311-94
|
OCR Scan
|
PDF
|
03/09/as
QQ-S-696.
QQ-B-750.
IL-T-10727,
IL-P-81726,
02MAY94
21-t1AR-95
orp13502
023/anpî
0SMY94
QQ-S-696
|
IRF640 equivalent
Abstract: irf630 irf640 IRF540 VN67AF VN0108N2 irf640 BUZ 72 A equivalent IRF232 IRF422 IRF632
Text: Siliconix 1-1? f l Ü Ü A C D ^ U / C D M i v i a Dr/\Wi iv iv ^ i v T T k iv r i i i i i v t iv u v iw i C A lA A ^ / \ r f^ .n \M é g ^ i^ v iv i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BV qss Volts 4 5 0 -5 0 0
|
OCR Scan
|
PDF
|
O-220
VN1000D
IRF522
VN1000A
IRF540
IRF632
IRF640
IRF640 equivalent
irf630 irf640
VN67AF
VN0108N2
BUZ 72 A equivalent
IRF232
IRF422
|
SSF6N90A
Abstract: No abstract text available
Text: Advanced SSF6N90A P o w e r MOSFET FEATURES BV • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge lD = E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 25 |a.A M ax. @ V DS = 900V
|
OCR Scan
|
PDF
|
SSF6N90A
SSF6N90A
|
500 DKZ
Abstract: TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren
Text: TELEPO RT VI ein Sprechfunkgerät für das 80-, 100- und 150/160-MHz-Band Kanalraster 50, 25 und 20 kHz Beschreibung A H /B s -V 300 657/1 Teile 1, 2, 3, 4, 5, 6 Nachdruck, auch auszugsweise, verboten 765 kn Mo Technische W eiterentwicklung Vorbehalten Inhalt
|
OCR Scan
|
PDF
|
150/160-MHz-Band
500 DKZ
TFK 4 314
valvo
TELEFUNKEN* U 111 B
str w 6052
tfk 1007
tfk 014
Schwingquarz Telefunken
TFK S 417 T
valvo transistoren
|
|
|
MSC1002
Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition
|
OCR Scan
|
PDF
|
28Vdc
MSC1002
AVIA c cube
IC CD 4440 amplifier circuit diagram
|
harris 5680
Abstract: 5680v Harris Semiconductor 882 bv 643 h1-5680
Text: HI-5680 i ¡2 HARRIS 12-Bit Low Cost Monolithic Dig ital-to-Analog Converter Features _L 3- D escription The HI-5680 is a monolithic, direct replacement for the popular D A C80-CBI, D A C 8 0 Z-C BI, and D A C85C-CBI, incorporating DAC 80 A L T E R N A T E S O U R C E
|
OCR Scan
|
PDF
|
HI-5680
12-Bit
DAC80-CBI,
DAC80Z-CBI,
OAC85C-CBI,
hig71
T-90-20
harris 5680
5680v
Harris Semiconductor 882
bv 643
h1-5680
|
5680V
Abstract: 5680 harris harris 5680 DAC80-CBI HI-5680V Harris 5680v
Text: HI-5680 i ¡2 HARRIS 12-Bit Low Cost Monolithic Dig ital-to-Analog Converter Features _L 3- D escription T he H I- 5 6 8 0 is a m onolithic, direct replacement for the popular • D A C 8 0 - C B I, D A C 80 A L T E R N A T E S O U R C E D A C 8 0 Z - C B I , and D A C 8 5 C - C B I, incorporating
|
OCR Scan
|
PDF
|
12-Bit
HI-5680
DAC80-CBI,
DAC80Z-CBI,
DAC85C-CBI,
T-90-20
5680V
5680 harris
harris 5680
DAC80-CBI
HI-5680V
Harris 5680v
|
Untitled
Abstract: No abstract text available
Text: PCB T e rm in a l S trip s , S erie s 2 5 6 , cage c lam p Pin S pacings 5 /5 .0 8 m m /0 .2 in ; 7 .5 /7 .6 2 m m /0 .3 in; 10/10.16 m m /0 .4 in F ront-entry Pin s p a c in g 5/5 .1 8 m m / 0 .2 in Pin s p a c in g 7 .5 /7 .6 2 m m / 0 .3 in Pin s p a c in g 1 0 / K .16 m m / 0 .4 in
|
OCR Scan
|
PDF
|
12-pole,
|
ESDA-12
Abstract: ESDA-10 ESDA-30 MPTE tucker ESDA-15 1N5629 1N5907 DDD200S ESDA-50
Text: IS SÛ UA RE D CO/ G E N E R A L 3918590 GENERAL SEMICONDUCTOR General ^ ^ Semiconductor ^ • Industries, Inc. D • 95D ^ FEATURES • 3600 waits Peak Pulse Power dissipation 8x 20 impulse • Availableinrangesfrom5.0to50 volts • Zero Inductance structure
|
OCR Scan
|
PDF
|
52SSGÃ
DDD200S
0to50
100amps,
ESDA-12
ESDA-10
ESDA-30
MPTE
tucker
ESDA-15
1N5629
1N5907
DDD200S
ESDA-50
|
Untitled
Abstract: No abstract text available
Text: S AM S U N G SEMICONDUCTOR IME INC I 7^4142 G007373 fl | PNP EPITAXIAL 7 = *r^ 7 SILICON DARLINGTON TRANSISTOR MPSA75 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vc*s=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
|
OCR Scan
|
PDF
|
G007373
MPSA75
625mW
|
162421
Abstract: 5680 harris mid 5680 HI-5690V-5
Text: H I-5 6 9 0 V /9 5 V /9 7 V H a r r is High Speed, 12-Bit Low Cost Monolithic Digital-to-Analog Converter Features Applications • V o lta g e O u tp u t w ith Fast S e t tlin g . 750n s H ig h S le w R a te .5 0 V // lis
|
OCR Scan
|
PDF
|
-5690V/95
12-Bit
750ns
HI-5680
HI-5690V
T-90-20
162421
5680 harris
mid 5680
HI-5690V-5
|
Untitled
Abstract: No abstract text available
Text: SFP9630 A d va n ce d Power MOSFET FEATURES BVdss = -200 V • ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : -10 nA Max. @ ■
|
OCR Scan
|
PDF
|
-200V
SFP9630
|
Untitled
Abstract: No abstract text available
Text: • 4302271 QDS4033 T04 ■ 2 H A R R IS HAS IR F640/641/642/643 IR F640R /641R /642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T0-22QAB TOP VIEW • 16A and 18A, 150V - 200V • rDS(on = 0 .1 8 0 and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*
|
OCR Scan
|
PDF
|
QDS4033
F640/641/642/643
F640R
/641R
/642R
/643R
T0-22QAB
IRF640,
IRF641,
IRF642,
|
IRFP240
Abstract: IRF640 SAMSUNG
Text: b4E D SAMSUNG ELECTRONICS INC • IRF640/641 /642/643 IRFP240/241/242/243 7 ^ 4 1 4 2 OG121TI ÖTS «SMfiK N-CHANNEL POWER MOSFETS FEATURES TO-220 • Low er R ds ON • Improved inductive ruggedness • • • • • F a s t sw itch in g tim e s R u g g ed p o lysilico n g a te ce ll s tru ctu re
|
OCR Scan
|
PDF
|
IRF640/641
IRFP240/241/242/243
OG121TI
O-220
IRF640/IRFP140
IRF641
IRFP241
F642/IRFP242
IRF643/IRFP243
IRF640/641/642/643
IRFP240
IRF640 SAMSUNG
|
