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    BV 42 TRANSISTOR EQUIVALENT Search Results

    BV 42 TRANSISTOR EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM3550SP/NOPB
    		Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85 Visit Texas Instruments Buy
    LM3550SPX/NOPB
    		Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85 Visit Texas Instruments Buy
    LP395Z/LFT1
    		Texas Instruments Ultra Reliable Power Transistor 3-TO-92 Visit Texas Instruments Buy
    LM395T/NOPB
    		Texas Instruments Ultra Reliable Power Transistor 3-TO-220 0 to 125 Visit Texas Instruments Buy
    ULN2003ANS
    		Texas Instruments High-Voltage, High-Current Darlington Transistor Arrays 16-SO Visit Texas Instruments Buy

    BV 42 TRANSISTOR EQUIVALENT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    X5T851

    Abstract: bv 42 TRANSISTOR equivalent
    Contextual Info: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		ZX5T851G OT223 OT223 522-ZX5T851GTA ZX5T851GTA X5T851 bv 42 TRANSISTOR equivalent PDF

    ZXTN2010GTA

    Abstract: ZXTN2010G ZXTN2010GTC Bv 42 transistor
    Contextual Info: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2010G OT223 OT223 ZXTN2010GTA ZXTN2010G ZXTN2010GTC Bv 42 transistor PDF

    Contextual Info: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2010G OT223 OT223 PDF

    ZXTN

    Abstract: ZXTN2010GTA ZXTN2010G ZXTN2010GTC
    Contextual Info: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2010G OT223 OT223 INFORMAT26100 ZXTN ZXTN2010GTA ZXTN2010G ZXTN2010GTC PDF

    ZX5T851G

    Abstract: ZX5T851GTA ZX5T851GTC Bv 42 transistor
    Contextual Info: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		ZX5T851G OT223 OT223 ZX5T851G ZX5T851GTA ZX5T851GTC Bv 42 transistor PDF

    X5T851

    Abstract: ZX5T851A ZX5T851ASTOA ZX5T851ASTZ
    Contextual Info: ZX5T851A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC


    Original     		ZX5T851A ZX5T851ASTOA ZX5T851ASTZ X5T851 ZX5T851A ZX5T851ASTOA ZX5T851ASTZ PDF

    Contextual Info: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2010A ZXTN2010ASTOA ZXTN2010AST) PDF

    ZXTN2010A

    Abstract: ZXTN2010ASTOA ZXTN2010ASTZ
    Contextual Info: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ PDF

    IC2A

    Abstract: marking N20 ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ
    Contextual Info: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ IC2A marking N20 ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ PDF

    npn 120v 10a transistor

    Abstract: ZX5T851Z ZX5T851ZTA
    Contextual Info: ZX5T851Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC


    Original     		ZX5T851Z npn 120v 10a transistor ZX5T851Z ZX5T851ZTA PDF

    Contextual Info: ZX5T851G 60V NPN M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extrem ely low on state losses m aking it ideal for use in


    Original     		ZX5T851G OT223 OT223 PDF

    sot223 device Marking

    Abstract: npn 20A ZX5T869G ZX5T869GTA ZX5T869GTC
    Contextual Info: ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		ZX5T869G OT223 OT223 Q26100 sot223 device Marking npn 20A ZX5T869G ZX5T869GTA ZX5T869GTC PDF

    X5T951

    Abstract: ZX5T951G ZX5T951GTA ZX5T951GTC Bv 42 transistor ZX5T951GT
    Contextual Info: ZX5T951G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in


    Original     		ZX5T951G OT223 OT223 X5T951 ZX5T951G ZX5T951GTA ZX5T951GTC Bv 42 transistor ZX5T951GT PDF

    ZXTN

    Abstract: sot223 device Marking ZXTN2007G ZXTN2007GTA ZXTN2007GTC
    Contextual Info: ZXTN2007G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2007G OT223 OT223 ZXTN sot223 device Marking ZXTN2007G ZXTN2007GTA ZXTN2007GTC PDF

    transistor marking 6A

    Abstract: ZXTN2010Z ZXTN2010ZTA
    Contextual Info: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		ZXTN2010Z transistor marking 6A ZXTN2010Z ZXTN2010ZTA PDF

    ZXTP2012GTA

    Abstract: sot223 device Marking ZXTP2012G ZXTP2012GTC Bv 42 transistor zxtP
    Contextual Info: ZXTP2012G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTP2012G OT223 OT223 ZXTP2012GTA ZXT26100 ZXTP2012GTA sot223 device Marking ZXTP2012G ZXTP2012GTC Bv 42 transistor zxtP PDF

    Contextual Info: OBSOLETE ALTERNATIVE IS ZXTN2005G ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		ZXTN2005G ZX5T869G OT223 OT223 ZX5T869GTA PDF

    Contextual Info: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		ZXTN2010Z PDF

    ZXTN2010ZTA

    Abstract: ZXTN2010Z 0019E
    Contextual Info: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		ZXTN2010Z ZXTN2010ZTA ZXTN2010Z 0019E PDF

    X5T849

    Abstract: ZX5T849G ZX5T849GTA ZX5T849GTC
    Contextual Info: ZX5T849G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		ZX5T849G OT223 OT223 X5T849 ZX5T849G ZX5T849GTA ZX5T849GTC PDF

    sot223 device Marking

    Abstract: transistor 355 ZX5T869G ZX5T869GTA ZX5T869GTC
    Contextual Info: ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 27m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		ZX5T869G OT223 OT223 sot223 device Marking transistor 355 ZX5T869G ZX5T869GTA ZX5T869GTC PDF

    ZXTN2005G

    Abstract: ZXTN2005GTA ZXTN2005GTC
    Contextual Info: ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2005G OT223 OT223 ZXTN2005G ZXTN2005GTA ZXTN2005GTC PDF

    zxtn

    Abstract: sot223 device Marking ZXTN2005GTC ZXTN2005G ZXTN2005GTA
    Contextual Info: ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2005G OT223 OT223 R26100 zxtn sot223 device Marking ZXTN2005GTC ZXTN2005G ZXTN2005GTA PDF

    53Z Zetex

    Abstract: "PNP Transistor"
    Contextual Info: ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits,


    Original     		-60mV 12Road 53Z Zetex "PNP Transistor" PDF