2N3729
Abstract: 2N3551 2N6925A 2N6583 2N6923 2n6924
Text: AVAILABLE GEOMETRIES — SORTED BY Ic MAX lcMAX BV ceo Ran§e BV ebo Ran8e Low Current HfE From V To (V) From (V) To (V) @ lc mA Mid-Range HfE High Current HtE Typ VCE(sat) Typ Typ Cib @ 0.5V Cob @ 10V ^S/b A Geom. Pol. Use Code 0.03 0014 PNP 2 10 25 4 6
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2N6340
2N6341
2N6350
2N6351
2N6352
2N6353
2N6378
2N6379
2N6381
2N6382
2N3729
2N3551
2N6925A
2N6583
2N6923
2n6924
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DRF601T2D
Abstract: RF601T2D
Text: SPICE PARAMETER RF601T2D by ROHM FAE Div. * DRF601T2D D model * Date: 2008/07/28 .MODEL DRF601T2D D + IS=150.44E-12 + N=1.1115 + RS=12.380E-3 + IKF=22.551E-3 + EG=1.0700 + CJO=99.780E-12 + M=.41038 + VJ=.43155 + ISR=411.26E-12 + NR=3 + BV=200 + TT=31.865E-9
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RF601T2D
DRF601T2D
44E-12
380E-3
551E-3
780E-12
26E-12
865E-9
RF601T2D
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2008.07.28
Abstract: DRF601B2D 4315 spice model RF601B2D
Text: SPICE PARAMETER RF601B2D by ROHM FAE Div. * DRF601B2D D model * Date: 2008/07/28 .MODEL DRF601B2D D + IS=150.44E-12 + N=1.1115 + RS=12.380E-3 + IKF=22.551E-3 + EG=1.0700 + CJO=99.780E-12 + M=.41038 + VJ=.43155 + ISR=411.26E-12 + NR=3 + BV=200 + TT=31.865E-9
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RF601B2D
DRF601B2D
44E-12
380E-3
551E-3
780E-12
26E-12
865E-9
2008.07.28
4315
spice model
RF601B2D
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D1SR154-400
Abstract: diode 1SR154-400 Model 534 1SR154-400 spice 1SR154-400 ROHM ROHM 1SR
Text: SPICE PARAMETER 1SR154-400 by ROHM FAE Div. * D1SR154-400 D model * Date: 2008/08/22 .MODEL D1SR154-400 D + IS=534.77E-12 + N=1.6239 + RS=50.532E-3 + IKF=4.0010 + CJO=23.729E-12 + M=.31942 + VJ=.41083 + ISR=2.4181E-9 + NR=2.5000 + BV=500 + TT=1.4427E-6
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1SR154-400
D1SR154-400
77E-12
532E-3
729E-12
4181E-9
4427E-6
diode 1SR154-400
Model 534
1SR154-400 spice
1SR154-400
ROHM
ROHM 1SR
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irfs250a
Abstract: No abstract text available
Text: IRFS250A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BV,OSS = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 u A Max. @ VDS= 200V
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IRFS250A
irfs250a
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F22V10B
Abstract: f22v1 ATF22V10 ATF22V10B ATF22V10BQ ATF22V10BQL
Text: Features • iflmÉL Industry Standard Architecture Low Cost Easy-to-Use Software Tools High Speed Electrically Erasable Programmable Logic Devices 7.5 ns Maximum Pin-to-Pin Delay Several Power Saving Options • • Device Icc. Stand-Bv ATF22V10B ATF22V10BQ
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ATF22V10B
ATF22V10BQ
ATF22V10BL
ATF22V10BQL
ATF22V10BQ-15JC
ATF22V10BQ-15PC
ATF22V10BQL-25JC
ATF22V10BQL-25PC
ATF22V10BQL-25SC
F22V10B
f22v1
ATF22V10
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Untitled
Abstract: No abstract text available
Text: Features • iflmËL Industry Standard Architecture Low Cost Easy-to-Use Software Tools High Speed Electrically Erasable Programmable Logic Devices 7.5 ns Maximum Pin-to-Pin Delay Several Power Saving Options • • Device Icc. Stand-Bv ATF22V10B ATF22V10BQ
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ATF22V10B
ATF22V10BQ
ATF22V10BL
ATF22V10BQL
ATF22V10BQL-25JC
ATF22V10BQL-25PC
ATF22V10BQL-25SC
ATF22V10BQL-25JI
ATF22V10BQL-25PI
ATF22V10BQL-25SI
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Untitled
Abstract: No abstract text available
Text: SAW FILTER TECHNICAL DATA KF402BS/BVKF518BS/BV SPECIFICATIONS FOR SAW FILTER Band pass filters for 400MHz^520MHz Range. High stability and reliability with good performance and no adjustment. Wide and sharp pass band characteristics. Low insertion loss and deep stop band attenuation
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KF402BS/BVKF518BS/BV
400MHz
520MHz
SC-45Package
SC-44package
KF402B-KF518B
KF402BS/BV
KF406BS/BV
KF410BS/BV
KF414BS/BV
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BV 410
Abstract: bv430 KF470 KF510 Marking h 498 BV466
Text: SAW FILTER TECHNICAL DATA KF402BS/BVKF518BS/BV SPECIFICATIONS FOR SAW FILTER Band pass filters for 400MHz^520MHz Range. High stability and reliability with good performance and no adjustment. Wide and sharp pass band characteristics. Low insertion loss and deep stop band attenuation
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KF402BS/BV-
KF518BS/BV
400MHz-520MHz
SC-44package
KF402B-KF518B
KF402BS/BV
KF442BS/BV
KF482BS/BV
KF406BS/BV
KF446BS/BV
BV 410
bv430
KF470
KF510
Marking h 498
BV466
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Untitled
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application Case Style Dlag. No. Voltage Gate to Source Min (Volta) Cutoff Voltage Gate to Source Max(OFF) (Volta) BV q s s Drain Current Zero-Gate Min-Max (mA) Drain Current
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250pA
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irf460 to-247
Abstract: IRF450R IRF331R IRF460 IRF840R IRF341R irf362 IRFP450R THOMSON DISTRIBUTOR 58e d irfp462
Text: THOnSON/ DISTRIBUTOR Power MOSFETs SflE D • T02bñ73 0G0S711 bST ■ T C S K - _ _ Rugged-Series Power MOSFETs — N-Channel continued Package ft JP Maximum Ratinas BV d s S (V) ■d s (A) 'DS(O N) OHMS eAS (mj) 350
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0G0S711
O-204
to-205
O-220
O-247
irf331r
irf343r
irf341r
irf353r
irf351r
irf460 to-247
IRF450R
IRF460
IRF840R
irf362
IRFP450R
THOMSON DISTRIBUTOR 58e d
irfp462
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tic 32a
Abstract: No abstract text available
Text: IRFS650A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BV d ss = 2 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VDS= 200V
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IRFS650A
tic 32a
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l13a
Abstract: SSS2n60
Text: SSS2N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV^ss = 600V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA Max. @ Lower R^on) : 3.892 Q. (Typ)
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SSS2N60A
l13a
SSS2n60
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Tny 178 PN
Abstract: TNY284-290 smd zener diode 12b 40 tny 286 pn TNY288
Text: TNY284-290 TinySwitch-4 Family Energy-Efficient, Off-Line Switcher With Line Compensated Overload Power Product Highlights Lowest System Cost with Enhanced Flexibility • 725 V rated MOSFET • Increases BV de-rating margin • Line compensated overload power – no additional components
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TNY284-290
Tny 178 PN
TNY284-290
smd zener diode 12b 40
tny 286 pn
TNY288
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP2533GY-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low Gate Charge N-CH D2 BV DSS S1 Fast Switching Performance D1 RoHS-compliant, halogen-free G2 P-CH S2 SOT-26 Y G1 Description
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AP2533GY-HF-3
OT-26
AP2533GY-HF-3
OT-26
12REF
37REF
90REF
20REF
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP2622GY-HF-3 Dual N-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs BV DSS Low Gate Charge D2 D1 Small surface-mount package 50V R DS ON 1.8Ω ID RoHS-compliant, halogen-free 520mA G2 G1 S1 Description
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AP2622GY-HF-3
520mA
OT-26
OT-26
12REF
37REF
90REF
20REF
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ssm20p02j
Abstract: No abstract text available
Text: SSM20P02H,J P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement D 2.5V gate drive capability Fast switching BV DSS -20V R DS ON 52mΩ ID G -18A S Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching,
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SSM20P02H
O-252
SSM20P02J)
O-251
ssm20p02j
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gelijkrichter
Abstract: No abstract text available
Text: Standaarden en reglementen Technische informatie Veiligheid Veiligheid Veiligheidsnormen Er zijn verschillende veiligheidsnormen. In het algemeen volgen ze het principe van dubbele veiligheid. De vereiste maatregelen zijn afhankelijk van de toepassing bv. draagbare, mobiele of vaste installaties alsook van de gebruikersgroepen of het gebruik volgens de ontwerpbedoeling.
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP20P02GH/J-3 P-channel Enhancement-mode Power MOSFET 2.5V Gate Drive Capability D Simple Drive Requirement BV DSS Fast Switching Characteristic RDS ON G RoHS-compliant -20V 52mΩ ID -18A S Description Advanced Power MOSFETs from APEC provide the designer with the best
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AP20P02GH/J-3
AP20P02GH-3
O-252
AP20P02GJ-3
O-251
AP20P02
20P02GJ
O-251
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LTAGP
Abstract: IRFU410A 1J15
Text: IRFU410A Advanced Power MOSFET IR F U 410A • Im proved Inductive R uggedness ■ R ugged P olysilicon G ate Cell S tructure BV = 520 V ^D S o n = 1 0 .0 n dss lD = ■ Fast S w itching T im es ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge
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IRFU410A
LTAGP
IRFU410A
1J15
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BTA18
Abstract: MMBT pnp BT5771 SOT23 M
Text: Fairchild Semiconductor Qjscrete pQwer an j SjQna| JeChnOlOQieS Selection Guides Surface Mount Bipolar Transistors (continued Low Noise Amplifiers Part Number NF (dB) M ax BV Min Mm T *» *6 nA Package V20S ÛI SOT-23 m 10 SOT-23 1 SOT-23 NMi M M B T 5089
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BTA18
OT-23
OT-23
BC857C
BC858C
BC859C
MMBT pnp
BT5771
SOT23 M
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Untitled
Abstract: No abstract text available
Text: MOTOROLA BINARY COUNTER The MC10178 is a four-bit counter capable of divide-by-two, divide-bv-four, divide-by-eight or a divide-by-sixteen function. Clock inputs trigger on the positive going edge of the clock pulse. Set and Reset inputs override the clock, allowing asyn
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MC10178
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Untitled
Abstract: No abstract text available
Text: Features Single Voltage for Read and Write: 2.7V to 3.6V BV , 3.0V to 3.6V (LV) Fast Read Access Time -120 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Chip Erase Cycle Time -1 0 seconds Byte-by-Byte Programming - 30 |is/Byte Typical
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AT49BV/LV040
120rray
MO-142
AT49BV020
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Untitled
Abstract: No abstract text available
Text: IRFWZ34 A d van ced Power MOSFET FEATURES BV DSS = 60 V ♦ Avalanche Rugged Technology 0.04Î2 ♦ Rugged Gate Oxide Technology ^D S o n - ♦ Lower Input Capacitance In = 30 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PA K ♦ 175°C Operating Temperature
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IRFWZ34
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