BUZ32 H Search Results

buz32

Contextual Info: , '~ 7 SCS-THOMSON \ A '# RfflD g^ i[L[lCT©liMD©i_ BUZ32 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss ^ D S (o n BUZ32 200 V 0.4 n Id 9 .5 A • 200 VOLTS FOR TELECOMS APPLICATIONS • HIGH CURRENT - FOR PULSED LASER DRIVES

buz32

Contextual Info: 7 SGS-THOMSON MÊliÂILlIfgïlMDMÊS BUZ32 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS on •d BUZ32 200 V 0.4 Q 9.5 A • 200 VO LTS FOR TELECO M S APPLICATIO NS • HIGH CURRENT - FOR PULSED LASER DRIVES • RATED FOR UNCLAM PED INDUCTIVE

BUZ32

Abstract: TB334
Contextual Info: BUZ32 Semiconductor Data Sheet 9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET October 1998 File Number 2416.1 Features • 9.5A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.400Ω (BUZ32) field effect transistor designed for applications such as

Contextual Info: T'ÎS'ÎBB? □GS'ibTÖ 4 • SGS-THOMSON BUZ32 IM CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR 3GE » N S G S-THOMSON TYPE V qss BUZ32 200 V Id ^DS on 0.4 a 9.5 A • 200 VOLTS FOR TELECO M S APPLICATIONS • HIGH CURR ENT - FOR PULSED LASER DRIVES • RATED FOR UNCLAM PED INDUCTIVE

Contextual Info: SGS-THOMSON ilLiraMOIgi BUZ32 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:

Contextual Info: N AMER PH IL IP S/D ISCRET E DbE D PowerMOS transistor • ” bbSBTBl 0D14451 4 ■ BUZ32 ^_ j May 1987 GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUZ32

Abstract: IEC61249-2-21
Contextual Info: BUZ 32 H3045A . Pb-free lead plating; RoHS compliant . Halogen-free according to IEC61249-2-21 Pb-free BUZ32 H3045A Rev. 2.2 PG-TO263-3 Yes 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A

BUZ32

Contextual Info: rZ7 ^ 7# » SGS-THOMSON BUZ32 CHIP M M [L i(g r a M © S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 1 5 6 x 1 5 6 mils M ETALLIZATIO N: Top Back Al A u /C r /N i/A u BACKSIDE THICKNESS: DIE TH ICKNESS: PASSIVATION: BONDING PAD SIZE:

Contextual Info: BUZ32 Semiconductor Data Sheet October 1998 9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET This is an N -C h a n n e l e n h a n c e m e n t m ode silicon g ate pow er field effect transistor d es ig n e d for applications such as File Number 2416.1 Features

buz32

Contextual Info: S G S -T H O M S O N w rc æ rz m s m BUZ32 e œ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS I TYPE •B U Z 3 2 . . . V dss R DS on| 200 V 0 . 4 £2 I Id 11 A AVALANCHE RUG G EDNESS TECHNO LO G Y 100% AVALANC HE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: 3QE D • 7^5^537 SCS-THOMSON 00301SM EILKgMMtgS T ■ s 6 s-fHonioN BUZ32 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS: 6100 A DIETHICKNESS: 16 ± 2 mils

Contextual Info: SILICONIX INC lflE D • A5 S4 7 3 5 D014bl3S Q ■ BUZ32 N-Channel Enhancement Mode Transistor TO-220AB TOP VIEW O PRODUCT SUMMARY Id . A V(BRJDSS 200 0.40 9.5 i 1 GATE 2 DRAIN (Connected to TAB) 3 SO U R C E 23 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

BUZ32

Abstract: T-39
Contextual Info: 30E » 7=55^37 0030124 T • S w # S G S -T H O M S O N S-THOMSON G BUZ32 CHIP k 7 # [iD [S o [i[L[i(giriE(Q)iio(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS:

IEC-61249-2-21

Contextual Info: BUZ 32 H3045A . Pb-free lead plating; RoHS compliant . Halogen-free according to IEC61249-2-21 Pb-free Yes Rev. 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10

t600c

Abstract: MC 139 transistor BUZ32 T0220AB MC139 K158
Contextual Info: N AMER PHILIPS/DISCRETE DbE D _ • PowerMOS transistor ^53131 00m451_M ■ BU Z32 May 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding,

buz11

Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
Contextual Info: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12

irf630 irf640

Abstract: IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF
Contextual Info: МОЩНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ Power MOSFET HARRIS является мировым лидером в производстве Power MOSFET. Выпускаются как n канальные, так и p канальные транзисторы, но первые используются чаще и имеют больший

BUZ32A

Contextual Info: SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type 1/ BUZ 32 200 V * DS 9.5 A Maximum Ratings Parameter Continuous drain current, Tc = 29 ‘C Pulsed drain current, Tc = 25 "C Avalanche current, limited by Tima% Avalanche energy, periodic limited by r j{max

BUZ171

Abstract: 8UZ11 SILICONIX t02G BUZ10 BUP67 BUP68 BUP69 BUP70 BUP71
Contextual Info: - 318 - f * A Vd s m £ tt ft Vg s %l ts Ta=25*C Id Pd Vg s (th) Id s s I g ss or € % m 4# tos(on) Vp:>= 14 (Ta=25<C ) Ip(on) Ciss g fs Coss Vd g * /CH * /CH (V) (A) (IV) V g s =0 (max) max min (nA) 500 ± 4 0 ±4 . 47 100 ±100 ±30 1000 500 3 6 1 2 10

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

IRFP 740

Abstract: SGSP364 sgsp369 TSD4M250V IRF 810 IRFP150 SGS100MA010D1 TSD4M350V TSD4M351V 220 to 110 power
Contextual Info: L^mg SGS-THOMSON A/f consumer MMiLKgWMtSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6 6 7 7

IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
Contextual Info: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­

S 170 MOSFET TRANSISTOR

Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
Contextual Info: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and

sso8 package

Abstract: MOSFET P SOT-23 BUZ350 BS0615NV BUZ345 SOT323 MOSFET P tda 2850 n-channel 250V power mosfet smd buz341 BSS138N
Contextual Info: L o w Vo l t a g e I C s – D i s c r e t e s : O p t i M O S , O p t i M O S ® 2 Pow e r Ma n a g e m e n t & Su p p l y : D C / D C Se l e c t i o n Gu i d e w w w. i n f i n e o n . c o m / p o w e r Never stop thinking. Introduction DC/DC CONVERSION plays a critical role in todays’ applications such as