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    BUZ 380 TRANSISTOR Search Results

    BUZ 380 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BUZ 380 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    buz 380 transistor

    Abstract: transistor buz 380 C67078-A3205-A2
    Text: BUZ 380 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 380 1000 V 5.5 A 2Ω TO-218 AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Drain source voltage VDS


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    PDF O-218 C67078-A3205-A2 buz 380 transistor transistor buz 380 C67078-A3205-A2

    buz 342 G

    Abstract: DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a
    Text: Gehäuseübersicht Package Information N-Kanal Leistungstransistoren Forts. N Channel Power Transistors G D S G TO-220 AB VDS V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 RDS(on) Ω 10 m 18 m 23 m 28 m 30 m


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    PDF O-220 O-218 346S2 BUO-218 buz 342 G DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a

    transistor BUZ 40

    Abstract: C67078-S1305-A4
    Text: SIPMOS Power Transistor BUZ 40 B ● N channel ● Enhancement mode ● Avalanche-rated Type VDS ID RDS on Package 1) Ordering Code BUZ 40 B 500 V 8.5 A 0.8 Ω TO-220 AB C67078-S1305-A4 Maximum Ratings Parameter Symbol Values Continuous drain current, TC = 35 ˚C


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    PDF O-220 C67078-S1305-A4 transistor BUZ 40 C67078-S1305-A4

    transistor BUZ 40

    Abstract: BUZ 382 C67078-A3207-A2
    Text: BUZ 382 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 382 400 V 12.5 A 0.4 Ω TO-218 AA C67078-A3207-A2 Maximum Ratings Parameter Symbol Drain source voltage


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    PDF O-218 C67078-A3207-A2 transistor BUZ 40 BUZ 382 C67078-A3207-A2

    MC706

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor BUZ 380 • N channel • Enhancement mode • FREDFET Type V'ds h ^DS on Package 1> Ordering Code BUZ 380 1000 V 5.5 A 2.0 n TO-218 AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 30 "C


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    PDF O-218 C67078-A3205-A2 MC706

    ld 1088 bs

    Abstract: k 1094 transistor 1/ld 1088 bs
    Text: SIEMENS BUZ 380 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 380 Vbs 1000 V 5.5 A ^bsfon 2w Package Ordering Code TO-218AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Drain source voltage Vbs V DGR Drain-gate voltage


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    PDF O-218AA C67078-A3205-A2 ld 1088 bs k 1094 transistor 1/ld 1088 bs

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 380 SIPMOS Power Transistor • N channel • Enhancement mode ' • FR ED FET fé YW5S 3 Pin 1 Pin 2 Type BUZ 380 Vfes 1000 V b flbsfon 2w 5.5 A Pin 3 D G S Package Ordering Code TO-218AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Drain source voltage


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    PDF O-218AA C67078-A3205-A2 flS35bOS 235b05 623SbGS

    siemens igbt BSM 25GD 100D

    Abstract: siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d
    Text: Typenübersicht/Selection Guide SIPMOS Power MOS Transistors Families of Types Type ^DS(max) ^D S(on)m ax ^D{max] V Q A Ptoi Package Page W N channel enhancement types £ 0 BUZ 10 EÜL BUZ 10 L 50 0.07 0.07 23 23 75 75 TO-220AB TO-220AB 690 700 £ □ BUZ 11


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    PDF O-220AB O-220 2x100 2x150 100GAL siemens igbt BSM 25GD 100D siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d

    FREDFET

    Abstract: 8A74
    Text: SIEMENS AKTIEN6ESELLSCHAF SIE D fl235b05 0 0 4 2 n s SG5 • S I E G -T -3 5 -/ / SIEMENS SIPMOS Leistungstransistoren SIPMOS* Power Transistors FREDFET-Anreicherungstypen mit schneller Inversdiode N-Kanal FREDFET enhancement types with high speed reverse


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    PDF fl235b05 C67078-S1401-A2 C67078-A3207-A2 C67078-A1102-A2 C67078-A1100-A2 C67078-A1400-A2 C67078-A3209-A2 C67078-A3210-A2 C67078-A1105-A2 C67078-A3205-A2 FREDFET 8A74

    0AB7

    Abstract: BUZ p channel BUZ384
    Text: SIEMENS SIPMOS Leistungstransistoren SIPMOS® Power Transistors FREDFET-Anreicherungstypen mit schneller Inversdiode N-Kanal FREDFET enhancement types with high speed reverse diodes (N channel) Typ Type M ds ^D S(on)m ax Id P tot V n A W Bestellnummer Ordering code


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    PDF C67078-S1401-A2 C67078-A3207-A2 O-220 O-218 67078-A1100-A2 C67078-A1400-A2 C67078-A3209-A2 C67078-A3210-A2 0AB7 BUZ p channel BUZ384

    BUZ210

    Abstract: Siemens t35 a1105 BUZ 215 FREDFET s132 C67078-A1400-A2 C67078-A3205-A2 C67078-A3207-A2 C67078-A3209-A2
    Text: SIE M EN S A K T I E N 6 E S E L L S C H A F SIE T> WÊ û 2 3 5 bO S GOMSnS SGS B I S I E 6 t S IE M E N S 35 ' / / SIPMOS Leistungstransistoren SIPMOS® Power Transistors FREDFET-Anreicherungstypen mit schneller Inversdiode N-Kanal FREDFET enhancem ent types with high speed reverse


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    PDF 023Sb05 T-35-// C67078-S1401-A2 O-220 C67078-A3207-A2 O-218 C67078-A1102-A2 O-204 C67078-A1100-A2 BUZ210 Siemens t35 a1105 BUZ 215 FREDFET s132 C67078-A1400-A2 C67078-A3205-A2 C67078-A3209-A2

    leistungstransistoren

    Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
    Text: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m


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    PDF O-220 BUZ12A BUZ11S2 BUZ10S2 O-218 346S2 BUP410D leistungstransistoren bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistors • • • • N channel Enhancement mode Avalanche-rated Logic Level Type ^ [18 1 BUZ 72 AL 100 V 9.0 A 0.025 BUZ 72 L 100 V 10 A 0.020 D ^ D S o n Maxim um Ratings Parameter Continuous drain current, 7'c = 25 "C Pulsed drain current,


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    PDF

    irfp 950

    Abstract: tsd4m450v SGSP479 transistor BUZ45 SGSP369 BUZ74 STHV82 IRFP 740 IRF 950 SGSP239
    Text: L^mg SGS-THOMSON A/f consumer M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6


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    PDF SGS35MA050D1 TSD4M450V MTP3N60 MTP3N60FI MTH6N60FI MTP6N60 STHV82 STHV102 TSD5MG40V STHI07N50FI irfp 950 SGSP479 transistor BUZ45 SGSP369 BUZ74 IRFP 740 IRF 950 SGSP239

    IRFP 740

    Abstract: IRF 810 IRF 426 irf transistors irfp 730 BUZ 82 Diodes BUZ C 840 irf 840 Diodes BUZ 840 BU 102
    Text: L^mg SGS-THOMSON consumer A / f M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6


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    PDF MTP3N60 MTH6N60 MTP6N60 IRFP 740 IRF 810 IRF 426 irf transistors irfp 730 BUZ 82 Diodes BUZ C 840 irf 840 Diodes BUZ 840 BU 102

    Diode GP 638

    Abstract: No abstract text available
    Text: SIEMENS BUZ 61 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 61 400 V h 12.5 A flbsion 0.4 n Package Ordering Code TO-220 AB C67078-S1341-A2 Maximum Ratings Parameter Symbol Values Unit A Continuous drain current


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    PDF O-220 C67078-S1341-A2 150stics Diode GP 638

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 40 B SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vfcs BUZ 40 B 500 V h 8.5 A flbSfon 0.8 a Package Ordering Code TO-220 AB C67078-S1305-A4 Maximum Ratings Parameter Symbol Continuous drain current Values


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    PDF O-220 C67078-S1305-A4

    buz 342 G

    Abstract: transistor 342 G transistor 342 pf buz 342 transistor FR 220 ph c5 diode siemens fog
    Text: SIEMENS BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • du/df rated • Ultra low on-resistance • 175°C operating temperature Type BUZ 342 Vds 50 V h 60 A flbS on Package Ordering Code 0.01 Q TO-218 AA C67078-S3135-A2


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    PDF O-218 C67078-S3135-A2 O-218AA buz 342 G transistor 342 G transistor 342 pf buz 342 transistor FR 220 ph c5 diode siemens fog

    DF 331 TRANSISTOR

    Abstract: D F 331 TRANSISTOR transistor d 331 transistor df 331 C 331 Transistor
    Text: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 331 l/bs 500 V fa 8A ^%S on 0 .8 » Package Ordering Code TO-218AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values


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    PDF O-218AA C67078-S3114-A2 00--------V O-218AA DF 331 TRANSISTOR D F 331 TRANSISTOR transistor d 331 transistor df 331 C 331 Transistor

    DIODE S4 74

    Abstract: s4 74 g1
    Text: SIEMENS BUZ 100SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type ^DS BUZ 100SL-4 55 V 7.4 A ffDS on Package Ordering Code 0.023 £1 P-DSO-28 C67078-S. . . . . . .


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    PDF 100SL-4 VPS05123 100SL-4 P-DSO-28 C67078-S. DIODE S4 74 s4 74 g1

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor • • • BUZ 40 B N channel Enhancem ent mode Avalanche-rated Type ^DS 1D ^DS on Package 1) O rdering Code BUZ 40 B 500 V 8.5 A 0.8 a TO-220 AB C67078-S1305-A4 Maxim um Ratings Parameter Symbol Continuous drain current, Tc = 35 'C


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    PDF O-220 C67078-S1305-A4

    M3555

    Abstract: No abstract text available
    Text: SIEMENS BUZ 100S-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Avalanche-rated • du/di rated Type ^DS BUZ 100S-4 55 V 8A ffDS on Package Ordering Code 0.02 Q. P-DSO-28 C67078-S. . . . -A. Maximum Ratings Parameter


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    PDF 100S-4 VPS05123 100S-4 P-DSO-28 C67078-S. M3555

    transistor buz 311

    Abstract: Buz 304 C67078-S1305-A4 T-150 diode sy 104 SIEMENS mcx
    Text: SIEMENS BUZ 40 B SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 40 B Vds 500 V Id 8.5 A flDS on 0.8 n Package Ordering Code TO-220 AB C67078-S1305-A4 Maximum Ratings Parameter Symbol Values Continuous drain current


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    PDF T35I55 O-220 C67078-S1305-A4 fl235b05 A235bD5 transistor buz 311 Buz 304 C67078-S1305-A4 T-150 diode sy 104 SIEMENS mcx

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 61 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 61 Vbs 400 V b 12.5 A ffDS on Package Ordering Code 0.4 £2 TO-220 AB C67078-S1341-A2 Maximum Ratings Parameter Symbol Continuous drain current Values


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    PDF O-220 C67078-S1341-A2 023SbG5 0Q642EB