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    BUY 1A 60V PNP Search Results

    BUY 1A 60V PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1943 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation
    TTA012 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA004B Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Visit Toshiba Electronic Devices & Storage Corporation
    TTA2070 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    BUY 1A 60V PNP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BD240/A/B/C BD240/A/B/C Medium Power Linear and Switching Applications • Complement to BD239/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER


    Original     		BD240/A/B/C BD239/A/B/C O-220 BD240 BD240A BD240B BD240C PDF

    Untitled

    Abstract: No abstract text available
    Text: KSB794/795 KSB794/795 Audio Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter


    Original     		KSB794/795 O-126 KSB794 KSB795 PW300 Cycle10% KSB795OSTU PDF

    Untitled

    Abstract: No abstract text available
    Text: KSB794/795 KSB794/795 Audio Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter


    Original     		KSB794/795 O-126 KSB794 KSB795 KSB794OSTU /new/html/KSB794 PDF

    OF TRANSISTOR AT 30B

    Abstract: No abstract text available
    Text: TIP30 Series TIP30/30A/30B/30C TIP30 Series(TIP30/30A/30B/30C) Medium Power Linear Switching Applications • Complementary to TIP29/29A/29B/29C TO-220 1 1.Base PNP Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		TIP30 TIP30/30A/30B/30C) TIP29/29A/29B/29C O-220 TIP30 TIP30A TIP30B TIP30C OF TRANSISTOR AT 30B PDF

    TRANSISTOR MARKING 1d9

    Abstract: ZXTP19060CFF TS16949 ZXTN19060CFF ZXTP19060CFFTA
    Text: ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC cont = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5 W Complementary part number ZXTN19060CFF Description C This medium voltage PNP transistor has been designed for applications


    Original     		ZXTP19060CFF OT23F, 100mA ZXTN19060CFF OT23F D-81541 TRANSISTOR MARKING 1d9 ZXTP19060CFF TS16949 ZXTN19060CFF ZXTP19060CFFTA PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC cont = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5 W Complementary part number ZXTN19060CFF Description C This medium voltage PNP transistor has been designed for applications


    Original     		ZXTP19060CFF OT23F, 100mA ZXTN19060CFF OT23F D-81541 PDF

    Untitled

    Abstract: No abstract text available
    Text: FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC cont = -1A PD = 500mW RCE(sat) = 295m⍀ at 1A Complementary part number : FMMT491 Description C Medium power planar PNP bipolar transistor. Features B • VCE(sat) maximum specification reduction


    Original     		FMMT591 500mW FMMT491 FMMT591TA D-81541 PDF

    FMMT591TA

    Abstract: design ideas FMMT591 ZETEX FMMT591 TS16949 FMMT491 buy 1a 60v pnp
    Text: FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC cont = -1A PD = 500mW RCE(sat) = 295m⍀ at 1A Complementary part number : FMMT491 Description C Medium power planar PNP bipolar transistor. Features B • VCE(sat) maximum specification reduction


    Original     		FMMT591 500mW FMMT491 FMMT591TA D-81541 FMMT591TA design ideas FMMT591 ZETEX FMMT591 TS16949 FMMT491 buy 1a 60v pnp PDF

    ZXTP19060CG

    Abstract: TS16949 ZXTN19060CG ZXTP19060CGTA
    Text: ZXTP19060CG 60V PNP medium transistor in SOT223 Summary BVCEO > -60V BVECO > -7V IC cont = 5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 3.0W Complementary part number ZXTN19060CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


    Original     		ZXTP19060CG OT223 -80mV ZXTN19060CG OT223 ZXTP19060CGTA D-81541 ZXTP19060CG TS16949 ZXTN19060CG ZXTP19060CGTA PDF

    ZXTN19060CZ

    Abstract: TS16949 ZXTP19060CZ ZXTP19060CZTA
    Text: ZXTP19060CZ 60V PNP medium transistor in SOT89 Summary BVCEO > -60V BVECO > -7V IC cont = 4.5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 2.4W Complementary part number ZXTN19060CZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor


    Original     		ZXTP19060CZ -80mV ZXTN19060CZ ZXTP19060CZTA D-81541 ZXTN19060CZ TS16949 ZXTP19060CZ ZXTP19060CZTA PDF

    fast switching pnp transistor 3A 60V

    Abstract: bd241 BD242
    Text: BD242/A/B/C BD242/A/B/C Medium Power Linear and Switching Applications • Complement to BD241/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER


    Original     		BD242/A/B/C BD241/A/B/C O-220 BD242 BD242A BD242B BD242C fast switching pnp transistor 3A 60V bd241 BD242 PDF

    "PNP Transistor"

    Abstract: design ideas TS16949 ZX5T951Z ZX5T951ZTA
    Text: ZX5T951Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


    Original     		ZX5T951Z "PNP Transistor" design ideas TS16949 ZX5T951Z ZX5T951ZTA PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP32 Series TIP32/32A/32B/32C TIP32 Series(TIP32/32A/32B/32C) Medium Power Linear Switching Applications • Complement to TIP31/31A/31B/31C TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		TIP32 TIP32/32A/32B/32C) TIP31/31A/31B/31C O-220 TIP32 TIP32A TIP32B TIP32C PDF

    transistor BD 325

    Abstract: No abstract text available
    Text: BD234/236/238 BD234/236/238 Medium Power Linear and Switching Applications • Complement to BD 233/235/237 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


    Original     		BD234/236/238 O-126 BD234 BD236 BD238 transistor BD 325 PDF

    BD376

    Abstract: TO-126 fairchild BD375 BD37810STU
    Text: BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		BD376/378/380 BD375, BD377 BD379 BD376 BD378 BD380 O-126 BD376 TO-126 fairchild BD375 BD37810STU PDF

    TRANSISTOR MARKING 1d9

    Abstract: TS16949 ZXTN19060CFF ZXTP19060CFF ZXTP19060CFFTA
    Text: ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC cont = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5 W Complementary part number ZXTN19060CFF Description C This medium voltage PNP transistor has been designed for applications


    Original     		ZXTP19060CFF OT23F, 100mA ZXTN19060CFF OT23F D-81541 TRANSISTOR MARKING 1d9 TS16949 ZXTN19060CFF ZXTP19060CFF ZXTP19060CFFTA PDF

    ZXTN2

    Abstract: No abstract text available
    Text: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to


    Original     		ZXTP25060BFH -100V, -85mV ZXTN25060BFH D-81541 ZXTN2 PDF

    TS16949

    Abstract: ZXTN25060BFH ZXTP25060BFH ZXTP25060BFHTA
    Text: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to


    Original     		ZXTP25060BFH -100V, -85mV ZXTN25060BFH D-81541 TS16949 ZXTN25060BFH ZXTP25060BFH ZXTP25060BFHTA PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to


    Original     		ZXTP2027F -100V, ZXTN2018F D-81541 PDF

    TS16949

    Abstract: ZXTN2018F ZXTP2027F ZXTP2027FTA
    Text: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to


    Original     		ZXTP2027F -100V, ZXTN2018F D-81541 TS16949 ZXTN2018F ZXTP2027F ZXTP2027FTA PDF

    Untitled

    Abstract: No abstract text available
    Text: BDW24/A/B/C BDW24/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW23, BDW23A, BDW23B and BDW23C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		BDW24/A/B/C BDW23, BDW23A, BDW23B BDW23C O-220 BDW24 BDW24A BDW24B PDF

    KSB1116

    Abstract: No abstract text available
    Text: KSB1116/1116A KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSD1616/1616A TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO


    Original     		KSB1116/1116A KSD1616/1616A KSB1116 KSB1116A KSB1116A PW10ms, Cycle50% KSB1116 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSB1116/1116A KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSD1616/1616A TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO


    Original     		KSB1116/1116A KSD1616/1616A KSB1116 KSB1116A KSB1116A PW10ms, Cycle50% PDF

    Untitled

    Abstract: No abstract text available
    Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


    Original     		BD176/178/180 O-126 BD176 BD178 BD180 BD180 PDF