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    BUS50 Price and Stock

    Kyocera AVX Components CDR31BP4R7BBUS-500

    CAP CER SMP MLC HI-REL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CDR31BP4R7BBUS-500 Reel 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.27084
    • 10000 $4.27084
    Buy Now

    Kyocera AVX Components CDR31BP4R7BBUS\\500

    Cap Ceramic 4.7pF 100V C0G 0.1pF SMD 0805 (0.001%FR) 125?C T/R - Tape and Reel (Alt: CDR31BP4R7BBUS\\500)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CDR31BP4R7BBUS\\500 Reel 28 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.81473
    • 10000 $3.54333
    Buy Now

    Bel Power Solutions BUS505

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com BUS505 16
    • 1 $63.8
    • 10 $51.7
    • 100 $45.1
    • 1000 $45.1
    • 10000 $45.1
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    Master Electronics BUS505 16
    • 1 $63.8
    • 10 $51.7
    • 100 $45.1
    • 1000 $45.1
    • 10000 $45.1
    Buy Now

    HOTCOLD HCC-03/MODBUS/-50...100C

    Converter: temperature; 24VDC; 24VAC; IN 1: Pt100; 80x80x25mm; IP22
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME HCC-03/MODBUS/-50...100C 1
    • 1 $56.77
    • 10 $56.77
    • 100 $56.77
    • 1000 $56.77
    • 10000 $56.77
    Get Quote

    HOTCOLD HCC-02KA/MODBUS/-50...100C

    Converter: temperature; 24VDC; 24VAC; IN 1: Pt100; 112x62x32mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME HCC-02KA/MODBUS/-50...100C 1
    • 1 $59
    • 10 $59
    • 100 $59
    • 1000 $59
    • 10000 $59
    Get Quote

    BUS50 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUS50 Motorola 70 AMPERES NPN SILICON POWER TRANSISTOR 125 VOLTS (BVCEO) 350 WATTS 200 V (BVCES) - Pol=NPN / Pkg=TO3 / Vceo=125 / Ic=70 / Hfe=20min / fT(Hz)=- / Pwr(W)=350 Original PDF
    BUS50 On Semiconductor SWITCHMODE NPN Silicon Power Transistor Original PDF
    BUS50 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=125 / Ic=70 / Hfe=20min / fT(Hz)=- / Pwr(W)=350 Original PDF
    BUS50 Motorola European Master Selection Guide 1986 Scan PDF
    BUS50 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BUS50 Motorola Switchmode Datasheet Scan PDF
    BUS50 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUS505 Power-One BUS DC/DC converters(3 WATT) Original PDF
    BUS505G Power-One DC-DC Converter: (4.65 to 5.5) V to (5) V Original PDF
    BUS50/D On Semiconductor 70 AMPERES NPN SILICON Original PDF
    BUS50-D On Semiconductor SWITCHMODE Series NPN Silicon Power Transistors Original PDF
    BUS50G On Semiconductor TRANS GP BJT NPN 125V 70A 2TO-3 Original PDF

    BUS50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUS50

    Abstract: No abstract text available
    Text: BUS50 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BUS50 O204AE) 1-Aug-02 BUS50

    Untitled

    Abstract: No abstract text available
    Text: BUS50 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BUS50 O204AE) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: BUS50 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BUS50 O204AE) 17-Jul-02

    2SC1403

    Abstract: 2N6107 equivalent 2SD425 2SB743 BU326 BU108 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Series NPN Silicon Power Transistors The BUS50 transistor is designed for low voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for battery switchmode applications such as:


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    PDF BUS50 BUS50 204AE TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC1403 2N6107 equivalent 2SD425 2SB743 BU326 BU108 BU100

    bus50

    Abstract: No abstract text available
    Text: ON Semiconductort BUS50 SWITCHMODEt Series NPN Silicon Power Transistors 70 AMPERES NPN SILICON POWER TRANSISTOR 125 VOLTS BVCEO 350 WATTS 200 V (BVCES) The BUS50 transistor is designed for low voltage, high–speed, power switching in inductive circuits where fall time is critical. It is


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    PDF BUS50 BUS50 204AE r14525 BUS50/D

    transistor tl 187

    Abstract: BUS50 MOTOROLA TRANSISTOR TRANSISTOR 023
    Text: MOTOROLA Order this document by BUS50/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Series NPN Silicon Power Transistors The BUS50 transistor is designed for low voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for battery


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    PDF BUS50/D* BUS50/D transistor tl 187 BUS50 MOTOROLA TRANSISTOR TRANSISTOR 023

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


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    PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    BUS505

    Abstract: BUS512 BUS515 HBS050ZG-A LES015YJ QBS066ZG-A QBS066ZG-AT8
    Text: BUS SERIES - 3 WATT DESCRIPTION FEATURES BUS DC/DC converters offer 3 Watts of output power in • Industry Standard • an industry standard DIP package. The 5 Volt input BUS • Package is designed for industrial and EDP applications. The BUS • Industry Standard


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    PDF BUS505 BUS512 BUS515 HBS050ZG-ANT3V HBS050ZG-A LES015YJ-3N LES015YJ QBS066ZG-AT8 QBS066ZG-A BUS505 BUS512 BUS515 QBS066ZG-AT8

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: BUS Single-Output DC-DC Series Data Sheet 3 Watts Features • • • • • • • • Industry-standard DIP package Industry-standard pinout 85°C case operation Short-circuit protection 5V input Input LC filter Regulated output 500V isolation Dimensions: 1.25” 31.8mm x 0.80” (20.3mm) x 0.40” (10.2mm)


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    PDF BUS505 BUS512 BUS515 LES015YJ-3N LES015YJ QBS066ZG-AT8 QBS066ZG-A

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


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    PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


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    PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


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    PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


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    PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    Motorola 3-351

    Abstract: BUS50 Bipolar Power Transistor Data
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUS50 SWITCHMODE Series NPN Silicon Power Transistors The B U S5 0 transistor is designed for low voltage, high-speed, power switching in inductive circuits where fall time is critical. It is particularly suited for battery


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    PDF BUS50 Range-65 IC-70 Motorola 3-351 Bipolar Power Transistor Data

    BUS11A

    Abstract: BUV11 BUT91
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUR51 BUR51S BUR52 BUR52S BUS11 BUS11 CECC BUS11A BUS11A CECC BUS 12 BUS12A BUS 13 BUS13A BUSI 4 BUS14A BUS50 BUS51 BUS52 BUT13 BUT13P BUT70 BUT70MC BUT72 BUT90 BUT90C BUT91 BUT92 BUT92A BUT92AS


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    PDF BUR51 BUR51S BUR52 BUR52S BUS11 BUS11A BUS12A BUS13A BUV11 BUT91

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA I SEMICONDUCTOR BUS50 TECHNICAL DATA 70 AMPERES NPN SIUCON POWER TRANSISTOR SWITCHMODE SERIES NPN SIUCON POWER TRANSISTORS 125 VO LTS BVCEO 350 W ATTS 200 V (BVCES) The B U S 5 0 transistor is designed for low voltage, high-speed, pow er sw itching in inductive circuits where fall time is critical. It is particularly


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    PDF BUS50

    BUT13P

    Abstract: BLN20 BUT14 SOT93 BUV62 BUS50 BUS13A BUV24 BUV41 but72
    Text: *4ö E ì> Ö1331Ö7 GG004S4 044 •SML B SEMELABE REL & HIGH ENERGY BI-POLAR TRANSISTORS Type Number BUS13 BUS13A BIJS14 BUSINA BUS50 BUS51 BUS52 BUT11 ia BUT13 BUT13P BUT14 BUT34 BIJT35 BUT70 IMJT72 BUT90 BOT91 BUT92 BUT92A KIVION BiJVll BUV18 BUV19 BIJV20


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    PDF GG004S4 BUS13 15min BUS13A BUS14A BUS50 20min BUS51 BUT13P BLN20 BUT14 SOT93 BUV62 BUV24 BUV41 but72

    Motorola 3-351

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA B U S5 0 SW IT C H M O D E Series N PN Silicon Power TVansistors The BUS50 transistor is designed for low voltage, high-speed, power switching in in d u ctiv e c irc u its w h e re fail tim e Is c ritic a l. It is p a rtic u la rly su ite d fo r ba ttery


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    PDF BUS50 1Q7A-05 O-204AE -125V) Motorola 3-351

    EM- 546 motor

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by BUS50/D SEMICONDUCTOR TECHNICAL DATA BUS50 S W IT C H M O D E S e rie s NPN S ilic o n P o w e r T ra n s is to rs The BUS50 transistor is designed for low voltage, high-speed, power switching in in d u ctive c ircu its w h e re fall tim e is critic a l. It is p a rtic u la rly su ite d fo r b a tte ry


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    PDF BUS50/D BUS50 BUS50 97A-05 O-204AE EM- 546 motor

    LCM 1601

    Abstract: C175
    Text: UNCONTROLLED DOCUMENT PART NU M BER REV. L C M - S 0 1601 DSF CHARACTER DETAIL 3 .7 7 [0.148II 3.07 CO.lEi: 0.55 [0.022] 0,75 CAUriON: STATIC SEN SIW E DEVICE FOLLOW PROPER EJSD. HANDUNG PROCEDURES WHEN WORKING WITH THIS PART. 6,56 [0 ,0 9 8 ] _ 7 5 ,0 0 4 PLS.5


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    PDF LCM-S01 LCM 1601 C175

    transistor buv18a

    Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
    Text: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min


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    PDF MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A MPSU45# MPSU60 MPSU52 MPSU51 transistor buv18a motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    8X2 LCD

    Abstract: LCD 6x2
    Text: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. LCM — S00802DSN A E.C.N. NUMBER AND REVISION COMMENTS DATE 4.20.07 E.C.N. # 1 1 1 4 9. CAUTION! STATIC SENSITIVE DEVICE FOLLOW PROPER E.S.D. HANDLING PROCEDURES WHEN WORKING WITH THIS PART. CHARCfER DETAIL 3 .5 5


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    PDF J339D S00802DSN 8X2 LCD LCD 6x2