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    BUP305D Search Results

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    Siemens BUP305D

    DUO PACK IGBT TO-218 Insulated Gate Bipolar Transistor, 12A I(C), 1200V V(BR)CES, N-Channel, TO-218
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    BUP305D Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUP305D Infineon Technologies IGBT With Antiparallel Diode Original PDF
    BUP305-D Infineon Technologies IGBT Duopack (IGBT with Antiparallel ... Original PDF
    BUP305D Siemens Original PDF

    BUP305D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IKW08T120

    Abstract: BUP305D
    Text: IKW08T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D Short circuit withstand time – 10µs


    Original
    PDF IKW08T120 BUP305D Jul-02 IKW08T120 BUP305D

    Untitled

    Abstract: No abstract text available
    Text: IGW08T120 q TrenchStop Series Low Loss IGBT in Trench and Fieldstop technology C • • • • • • • • • • Approx. 1.0V reduced VCE sat compared to BUP305D Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply


    Original
    PDF IGW08T120 BUP305D

    RG81

    Abstract: IGW08T120 BUP305D
    Text: IGW08T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • C Approx. 1.0V reduced VCE sat compared to BUP305D Short circuit withstand time – 10µs Designed for : G E - Frequency Converters - Uninterrupted Power Supply


    Original
    PDF IGW08T120 BUP305D P-TO-24nformation Jul-02 RG81 IGW08T120 BUP305D

    k08T120

    Abstract: No abstract text available
    Text: IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C •           Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D


    Original
    PDF IKW08T120 BUP305D k08T120

    IGW08T120

    Abstract: BUP305D BUP305-D mj04
    Text: Preliminary IGW08T120 TrenchStoP Series Low Loss IGBT in Trench and Fieldstop technology C • • • • • Approx. 1.0V reduced VCE sat compared to BUP305D Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply


    Original
    PDF IGW08T120 BUP305D 15nformation Sep-03 IGW08T120 BUP305D BUP305-D mj04

    BUP305D

    Abstract: IKW08T120
    Text: IKW08T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D Short circuit withstand time – 10µs


    Original
    PDF IKW08T120 BUP305D Oct-03 BUP305D IKW08T120

    integrated circuit MAR 521

    Abstract: No abstract text available
    Text: Preliminary IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • C • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D Short circuit withstand time – 10µs


    Original
    PDF IKW08T120 BUP305D Mar-02 integrated circuit MAR 521

    k08t120

    Abstract: BUP30 k08t12
    Text: IKW08T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D


    Original
    PDF IKW08T120 BUP305D k08t120 BUP30 k08t12

    Untitled

    Abstract: No abstract text available
    Text: IKW08T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D


    Original
    PDF IKW08T120 BUP305D

    Untitled

    Abstract: No abstract text available
    Text: IGW08T120 q TrenchStop Series Low Loss IGBT in Trench and Fieldstop technology C • • • • • • • • • • Approx. 1.0V reduced VCE sat compared to BUP305D Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply


    Original
    PDF IGW08T120 BUP305D

    k08T120

    Abstract: IKW08T120 BUP305D PG-TO-247-3 diode of 5a 5v 10kHz RG81 mj04
    Text: IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D


    Original
    PDF IKW08T120 BUP305D k08T120 IKW08T120 BUP305D PG-TO-247-3 diode of 5a 5v 10kHz RG81 mj04

    Untitled

    Abstract: No abstract text available
    Text: Preliminary IGW08T120 TrenchStoP Series Low Loss IGBT in Trench and Fieldstop technology C • • • • • Approx. 1.0V reduced VCE sat compared to BUP305D Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply


    Original
    PDF IGW08T120 BUP305D O-247AC Q67040-S4513 IGW08T120 Jan-02

    k08T120

    Abstract: No abstract text available
    Text: IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D


    Original
    PDF IKW08T120 BUP305D k08T120

    k08T120

    Abstract: 5M MARKING CODE DIODE 5A 100V IKW08T120 BUP305D PG-TO-247-3-21
    Text: IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D


    Original
    PDF IKW08T120 BUP305D k08T120 5M MARKING CODE DIODE 5A 100V IKW08T120 BUP305D PG-TO-247-3-21

    din 1190 diode

    Abstract: 305d
    Text: SIEMENS BUP 305 D IGBT W ith Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 305 D VCB h 1200V 12A Pin 1 Pin 2 Pin 3 G C E Package


    OCR Scan
    PDF O-218AB Q67040-A4225-A2 SII00325 BUP305D din 1190 diode 305d

    10A600V

    Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
    Text: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU


    OCR Scan
    PDF HGIP12NB0B3 115J101 IXGP10N60A IXGH10N60A HGTP20N6QB3 GT25JT01 IXGH20N6QA IXGH24N6QA IXGH40N60A IXGH50N6 10A600V 1XGH20N60AU1 IGBT cross reference IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V