BUL56A Search Results
BUL56A Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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BUL56A |
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ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | Original | |||
BUL56ASMD |
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Bipolar NPN Device in a Hermetically Sealed Ceramic Surface Mount Package for High Reliability Applications | Original |
BUL56A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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BUL56ASMDContextual Info: BUL56ASMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed |
Original |
BUL56ASMD O276AB) 15-Aug-02 BUL56ASMD | |
BUL56AContextual Info: SEME BUL56A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85 |
Original |
BUL56A BUL56A | |
Contextual Info: Mil = ^ = INI BUL56A SEME LAB MECHANICAL DATA Dimensions in mm 4.5 10.2 , f*-► f*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE |
OCR Scan |
BUL56A T0220 | |
T0251
Abstract: T0-251
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OCR Scan |
BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B BUL51A BUL51B T0251 T0-251 | |
Contextual Info: SEME BUL56A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85 |
Original |
BUL56A | |
2n3866s
Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
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OCR Scan |
BYV34-300SM BYV34-400ASM BYV34-- 400RSM 400SM BYV34-500ASM BYV34-500RSM BYV34-500SM LM137-SM 2n3866s DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82 | |
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
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Original |
2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN | |
bup43Contextual Info: IMI i ^= IDI Sem elab Power M anagem ent Division BI-POLAR POWER TRANSISTORS PRIME SALES TYPES R ei. P ackage v ce/ P a rt No. O p tio n s P o la rity V CEO BUL46A / NPN BUL46B / BUL47A BUL47B PD Type h FE / ' c 500 le 7 10min 4/8 20M 200 T O -3 NPN 400 25 |
OCR Scan |
BUL46A BUL46B BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B bup43 | |
mje13009 equivalent
Abstract: MJEI3008 BUV46 equivalent buu26 ST MJE13007 mje13007 equivalent
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OCR Scan |
BUL74A MJE13009 BUL36I T022SGO T0220 BUV46 MJE13004 BUL53A mje13009 equivalent MJEI3008 BUV46 equivalent buu26 ST MJE13007 mje13007 equivalent | |
bup4
Abstract: bup57 bup44
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OCR Scan |
BUP52 BUP54 T0247 BUP56 BUP59 bup4 bup57 bup44 |