BUK9575-100A Search Results
BUK9575-100A Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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100A474S10Y |
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1K X 4 ECL I/O SRAM, CENT |
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100A474S4Y8 |
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1K X 4 ECL I/O SRAM, CENT |
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100A484S4-5Y |
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4K X 4 ECL I/O SRAM |
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100A474S4-5Y8 |
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1K X 4 ECL I/O SRAM, CENT |
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100A474S8DF |
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1K X 4 ECL I/O SRAM, CENT |
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BUK9575-100A Price and Stock
Nexperia BUK9575-100A,127MOSFET N-CH 100V 23A TO220AB |
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BUK9575-100A,127 | Tube |
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BUK9575-100A,127 | 30,744 |
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BUK9575-100A,127 | 50 |
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BUK9575-100A,127 | 50 |
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NXP Semiconductors BUK9575-100A |
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BUK9575-100A | 76 |
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BUK9575-100A | 183 |
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BUK9575-100A | 129 |
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NXP Semiconductors BUK9575100AN-CHANNEL TRENCHMOS LOGIC LEVEL FET Power Field-Effect Transistor, 23A I(D), 100V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB ; ECCN: EAR99 |
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BUK9575100A | 32,017 |
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EBV Chips PHSBUK9575-100A,127TO220AB100V TRENCHFET N CHANNEL (Alt: BUK9575-100A,127) |
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PHSBUK9575-100A,127 | 3 Weeks | 1 |
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NXP Semiconductors BUK9575-100A,127N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 98 W; Package Body Material: PLASTIC/EPOXY; Avalanche Energy Rating (EAS): 100 mJ; |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BUK9575-100A,127 | 87 |
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BUK9575-100A Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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BUK9575-100A |
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N-channel TrenchMOS logic level FET | Original | |||
BUK9575-100A |
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TrenchMOS transistor Logic level FET | Original | |||
BUK9575-100A |
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TrenchMOS transistor Logic level FET | Original | |||
BUK9575-100A,127 |
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TrenchMOS transistor Logic level FET - Configuration: Single N-channel ; ID DC: 23 A; Qgd (typ): 10 nC; RDS(on): 72@10V75@5V84@4.5V mOhm; Thermal Resistance: 1.5 K/W; VDSmax: 100 V; Package: week 20, 2005 | Original |