Bubble Memory
Abstract: TA 7230 P intel 8085 Intel BUBBLE 7230 intel 7110 intel 8088 memory memory bubble INTEL 7230 S6590
Text: 7230 CURRENT PULSE GENERATOR FOR BUBBLE MEMORIES TTL Compatible Inputs Provides all Pulses for IM’s Bubble Memories — Replicate, Swap, Generate, Boot Replicate and Bootswap Current Sink Outputs Designed to Directly Drive Bubble Memory • Direct Interface to Bubble Memory
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22-Pin
71meter
S6590
S6590
AFN-01357A
Bubble Memory
TA 7230 P
intel 8085
Intel BUBBLE
7230
intel 7110
intel 8088 memory
memory bubble
INTEL 7230
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NBM2256
Abstract: generator with magnetic permanent magnetic bubble memories bubble memory bubble memories
Text: Magnetic Bubble Memories « « iew NBM2256 Bubble Memory General Description National Semiconductor’s NBM2256 is a low cost, non-volatile, highly reliable solid state memory that uses magnetic bubble technology. The NBM2256 has the form of a dual-in-line package
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NBM2256
NBM2256
generator with magnetic permanent
magnetic bubble memories
bubble memory
bubble memories
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BPK72
Abstract: intel 7110 DMA Controller 8257 isbx-251
Text: APPLICATION NOTE AP-157 O c to b e r 1983 AP-157 INTRODUCTION^ The 7220-! is a single-chip LSI Bubble Memory Controller BMC that implements a bubble memory storage subsystem (with up to eight bubble storage units (BSUs) per BMC). Each bubble storage unit consists of five support circuits in addition
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AP-157
BPK72
intel 7110
DMA Controller 8257
isbx-251
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DS3615
Abstract: NBM2256 tazer 74LS164 74LS165 NBC82853 MC811 microbus FAIU
Text: December19£ p r e lim in a r y NBC82851256k-Bit Bubble Memory Controller General Description The NBC82851 is a dedicated bubble memory controller designed fo r use w ith N ational S e m iconductor’s NBM2256 256k-bit magnetic bubble memory. The control
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December19fi
NBC82851256k-Bit
NBC82851
NBM2256
256k-bit
DS3615
tazer
74LS164
74LS165
NBC82853
MC811
microbus
FAIU
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bubble memory
Abstract: bubble
Text: Magnetic Bubble Memories prew ew DS3615 Bubble Memory Function Driver General Description Features TTL compatible inputs Operates from two standard supplies: +5V, +12V PNP inputs minimize loading Built-in voltage boost circuitry—does not require an extra
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DS3615
DS3615
NBM2256
256K-bit
TheOS3615
bubble memory
bubble
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bubble memory
Abstract: No abstract text available
Text: p r e l im in a r y NBC82851256k-Bit Bubble Memory Controller General Description The NBC82851 is a dedicated bubble memory controller designed fo r use w ith N ational S em icon ducto r’s NBM2256 256k-bit m agnetic bubble memory. The control ler is designed so that a m inim um of interface circuitry is
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NBC82851256k-Bit
NBC82851
NBM2256
256k-bit
bubble memory
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intel 8055
Abstract: BPK70 intel 7242
Text: in te i 7242 DUAL FORMATTER/SENSE AMPLIFIER FOR BUBBLE MEMORIES FIFO Data Block Buffer Error Detection/Correction Done Automatically Dual Channel Daisy-Chained Selects for Multiple Bubble Memory Systems On-Chip Sense Amplifiers MOS N-Channel Technology Automatically Handles Redundant
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20-Pin
tcYC-11
AFN-01358A
AFN-01358A
intel 8055
BPK70
intel 7242
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256KBIT
Abstract: bubble memory bubble timing generator sync INS82851 NBM2256 256k FIFO
Text: INS82851 National Magnetic B uttle Memories Semiconductor PREVIEW INS82851 Bubble Memory Controller General Description Features The INS82851 is an NMOS con troller s pecifically programmed fo r use with National S em iconductor’s NBM2256 256K-bit magnetic bubble memory. The
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INS82851
NBM2256
256K-bit
40-pin
INS82851
256KBIT
bubble memory
bubble
timing generator sync
256k FIFO
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TSW 8088
Abstract: 7110A manual pulse generator hm BPK-72 Bubble Memory BPK72 7110a-1 microprocessors z 8088 I7220 IN75463 BPK70A
Text: in te f r a iy iM iD iM W BPK 70A 1MBIT BUBBLE MEMORY SUBSYSTEM BPK 70A-1 0 °C to 75°C BPK 70A-4 10°C to 55°C BPK 70A-5 - 2 0 °C to 85°C • 1 M bit 128K Bytes Non-volatile, Solid-state, Read/W rite Bubble Memory Subsystem ■ Contains Bubble Mem ory and all ICs
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20-pin
TSW 8088
7110A
manual pulse generator hm
BPK-72 Bubble Memory
BPK72
7110a-1
microprocessors z 8088
I7220
IN75463
BPK70A
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intel 7110
Abstract: MAGNETICA bubble memory "bubble memory" content addressable memory sense amplifier "content addressable memory" sense amplifier Intel BUBBLE magnetic bubble memories
Text: iny A PRIMER ON MAGNETIC BUBBLE MEMORY Magnetic bubble memory is a solid-state technology with high reliability, ruggedness, small size, light weight, and limited power dissipation. It has applications in telecommunications, data acquisition, industrial control, terminals, and small busi
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intel 7110
Abstract: vmos fet intel 8085 INTEL 7254 vmos BPK70 DIODE S4 3a vmos to bubble memories 7254 coil driver
Text: intei 7254 QUAD VMOS DRIVE TRANSISTORS FOR BUBBLE MEMORIES Designed to Drive X and Y Coils of 7110 Bubble Memories • Operates from V qd Only No Bias Currents Required ■ VMOS FET Technology Fast Turn-on and Turn-off — 30 ns Maximum ■ N-Channel and P-Channel Transistors
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14-Pin
HP21SA
intel 7110
vmos fet
intel 8085
INTEL 7254
vmos
BPK70
DIODE S4 3a
vmos to
bubble memories
7254 coil driver
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VMOS Transistor
Abstract: block diagram of intel 8255 chip vmos intel 8085 bubble memory BPK70 INTEL 7250
Text: ¡y G M Ä liW in te l 7250 COIL PRE-DRIVER FOR BUBBLE MEMORIES • Very Low Power Only One Power Supply Required, + 12V ■ Power Fail Reset for Maximum Protection of Bubble Memory CMOS Technology ■ TTL Compatible Inputs Standard 16-Piri Dual In-Line Package
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16-Piri
16-LEAD
VMOS Transistor
block diagram of intel 8255 chip
vmos
intel 8085
bubble memory
BPK70
INTEL 7250
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bubble memory
Abstract: bubble memories memory bubble magnetic bubble memories DS3615 NBM2256
Text: Magnetic Bubble Memories PREV,EW DS3615 Bubble Memory Function Driver General Description Features TTL com patible inputs Operates from tw o standard supplies: + 5V , + 12 V PNP inpu ts m inim ize loading B uilt-in voltage boost c irc u itry — does not require an extra
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DS3615
NBM2256
256K-bit
TheOS3615
bubble memory
bubble memories
memory bubble
magnetic bubble memories
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MC34047
Abstract: MC34046
Text: SC42584 SC42585 MOTOROLA A d v a n c e Information GENERAL DESCRIPTION The SC42584 and SC42585 Bubble M em ory controllers are m onolithic HMOS integrated circuits which control the operation of the Motorola MBM2256 256 Kilobit and MBM2011 <1 Megabit) Magnetic Bubble Memories, respectively. They provide the inter
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SC42584
SC42585
SC42585
MBM2256
MBM2011
40-pin
MC34047
MC34046
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ms 7254 ver 3.0
Abstract: AR-243 motorola bubble memory controller intel 7114 bubble
Text: irrtei ARTICLE REPRINT AR-243 Thin-film detectors, X-ray lithography deliver 4-Mbit bubble chip Next-generation bubble memory chip is even smaller than the compatible, 1-Mbit device; set of support circuits takes care of memory system requirements. Propelled by X-ray lithogra
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AR-243
ms 7254 ver 3.0
AR-243
motorola bubble memory controller
intel 7114 bubble
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8086 8257 DMA controller interfacing
Abstract: interfacing of 8257 devices with 8085 interfacing of 8257 with 8086 interfacing of 8237 with 8086 IC AN 7220 IC AN 7220 b interfacing of 8237 with 8085 8086 8257 DMA controller intel 8085 pin assignments ic dma 8237 8088
Text: in te T MSWMKSIS ONIFOäßMirO ßO 7220 BUBBLE MEMORY CONTROLLER • DMA Handshake Capability 8080/8085/8088/8086 Microprocessor Interface ■ Single or Multiple Page Block Transfers Interfaces Up to Eight Bubble Storage Subsystems ■ HMOS Technology ■ Standard 40-Pin Dual In-Line Package
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40-Pin
BPK70
1756A
017S6A
8086 8257 DMA controller interfacing
interfacing of 8257 devices with 8085
interfacing of 8257 with 8086
interfacing of 8237 with 8086
IC AN 7220
IC AN 7220 b
interfacing of 8237 with 8085
8086 8257 DMA controller
intel 8085 pin assignments
ic dma 8237 8088
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intel 7114 bubble
Abstract: IN75463 7114 intel "bubble memory" AN7224 TA 7264 5v75 BPK-70 Bubble Memory bubble memory intel 7234
Text: O M F Ü K ß f lÄ T T O Ü K I BPK 5V74 4MBIT BUBBLE MEMORY SUBSYSTEM BPK 5V74-4 10°C To 55°C • 4 Mbit 512K Bytes Non-Volatile, Solid-state, Read/Write Bubble Memory Subsystem ■ Maximum Data Rate of 200K bit/sec with One Subsystem ■ Interfaces to Host Microprocessor
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5V74-4
400/x
intel 7114 bubble
IN75463
7114 intel
"bubble memory"
AN7224
TA 7264
5v75
BPK-70 Bubble Memory
bubble memory
intel 7234
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IC AN 7220
Abstract: BPK-72 Bubble Memory 8080 intel microprocessor pin diagram BPK-70 Bubble Memory BPK72 BPK70 BPK70A Bubble Memory intel 80286 design kit IC 7905 pin diagram
Text: [P^ILORSIOMÀW ¡n tg l BPK 70 1MBIT BUBBLE MEMORY SUBSYSTEM BPK 70-1 0 °C to 75°C BPK 70-4 10°C to 5 5 °C BPK 70-5 - 2 0 ° C to 85°C 1 Mbit 128K Bytes Non-volatile, Solid-state, Read/Write Bubble Memory Subsystem Interfaces to Host Microprocessor
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20-pin
IC AN 7220
BPK-72 Bubble Memory
8080 intel microprocessor pin diagram
BPK-70 Bubble Memory
BPK72
BPK70
BPK70A
Bubble Memory
intel 80286 design kit
IC 7905 pin diagram
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dma 8257
Abstract: BPK-72 Bubble Memory IC AN 7220 Bubble Memory BPK72 Memtech intel 8257 7220 DMA Controller 8257 IC AN 7220 b
Text: M em /e c h 7220 CONTROLLER FOR 1 MBIT BPK 70 AZ BUBBLE MEMORY SUBSYSTEM 0°C To 75°C —20°C To + 85°C —40°C To +85°C 7220-1 7220-5 7220-6 • Provides Interface between Host Microprocessor and 1 Mbit Bubble Subsystems ■ 16 Easy-to-Use Commands ■ Interfaces to 8080/85/86/88/186/286
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70AZ-1,
70AZ-5
/0388/3K/RJ
dma 8257
BPK-72 Bubble Memory
IC AN 7220
Bubble Memory
BPK72
Memtech
intel 8257
7220
DMA Controller 8257
IC AN 7220 b
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TIB0203
Abstract: texas bubble TIB0103 TMS9916 tms 9980 processor "bubble memory" TMS9900 TIB0 magnetic bubble memories
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED S em iconductor G roup TMS 9916 BUBBLE MEMORY CONTROLLER MARCH 1980 PRELIMINARY T e x a s In s t r u m e n t s I N CO R POR A lt i I 1. INTRODUCTION 1.1 DESCRIPTION The TMS 9916 is an MOS/LSI implementation o f a magnetic-bubble-memory controller MBMC). The MBMC pro
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40-PIN
TIB0203
texas bubble
TIB0103
TMS9916
tms 9980 processor
"bubble memory"
TMS9900
TIB0
magnetic bubble memories
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magnetic bubble memories
Abstract: No abstract text available
Text: SP9001C FOUR CHANNEL MAGNETIC BUBBLE SENSE AMPLIFIER GENERAL DESCRIPTION V» 2 - [ 1 The SP9001C is an integrated circuit designed to detect low level pulses. The circuit is organised w ith fou r differential input am plifiers w hich are m ultiplexed to give tw o latched
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SP9001C
SP9001C
magnetic bubble memories
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intel 7114 bubble
Abstract: Intel BUBBLE IC AN 7110
Text: intei ARTICLE REPRINT AR-271 Aprii 1983 Rtprtnfrf with p « i» M o a trom Etoctflontes làaguirm, U v c h 94,1993: Copyright M cQ nw Hifl, f M3. 6-224 OMNNt NUMMDt: H0M3-M1 inteT AR-271 New bubble-memory packaging cuts board space and manufacturing costs
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AR-271
intel 7114 bubble
Intel BUBBLE
IC AN 7110
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7C408A
Abstract: No abstract text available
Text: CY7C408A CY7C409A m w C Y PR ESS Features • 64 x 8 and 64 x 9 first-in first-out FIFO buffer memory • 35-MHz shift in and shift out rates • Almost Full/Almost Empty and Half Full flags • Dual-port RAM architecture • Fast (50-ns) bubble-through
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CY7C408A
CY7C409A
7C408A
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bubble memory plessey
Abstract: SP9001 bubble memory
Text: PLESSEY SEMIC ON D UC TOR S TS D Ë | 7EEQS13 □ □ □ ta7 4 S Û | ~ 7220513 PLESSEY SEMICONDUCTORS ü T ~ 7 3 -S / 95D 06742 PLESSEY Semiconductors. SP9001C FOUR CHANNEL MAGNETIC BUBBLE SENSE AMPLIFIER GENERAL DESCRIPTION Vi. T h e S P 9001C is an integrated circuit designed to detect
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7EEQS13
SP9001C
9001C
000b74fl
bubble memory plessey
SP9001
bubble memory
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