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    BU2722DF Price and Stock

    NXP Semiconductors BU2722DF

    NPN; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;
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    BU2722DF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BU2722DF Philips Semiconductors Silicon Diffused Power Transistor Original PDF

    BU2722DF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BU2722AF

    Abstract: BU2722DF bu2720
    Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2722DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of high resolution monitors. Suitable for


    Original     		BU2722DF BU2722AF BU2722DF bu2720 PDF

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of high resolution monitors. Suitable for


    Original     		BU2722DX PDF