transistor tt 2206
Abstract: TT 2206 transistor transistor BU 102 t 326 Transistor transistor npn 326 BU326 W2206 326 Transistor
Text: ESC D Ml fl2 3 5 bOS G 0 G M Ô 4 M *] H S 1 E G , NPN Silicon Power Transistor BU 326 A - SIEMENS AKT IENÛ ES ELLS CH AF BU 326 A is a triple diffused silicon NPN power switching transistor in TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength and is
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Q62702-U268
0t304
transistor tt 2206
TT 2206 transistor
transistor BU 102
t 326 Transistor
transistor npn 326
BU326
W2206
326 Transistor
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BU326
Abstract: Itron 326A BU326A BU 2578 SOLITRON DEVICES
Text: 8368602 SOL ITRON DEV ICES_I NC.jTl DE |fl3bfltiDa DD 01415 fi TÌà. Solitron D E V I C E S , INC. BU 326 BU 326A KPU SILICON POWER TRANSISTORS 6 AMPERES FEATURES: HIGH VOLTAGE FAST SWITCHING APPLIC A TIO N S SWITCHING MODE POWER SUPPLIES; CAN BE USED IN HORIZONTAL OUTPUT STAGE
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t 326 Transistor
Abstract: 326 Transistor BU 103 A transistor J 326 transistor BU 104 BU326 Q62702-U268 npn transistor w5
Text: E5C D Ml fl235bOS G0GMÔ4M 'i H S 1 E G , NPN Silicon Power Transistor BU 326 A -SIEMENS AKTIENÛESELLSCHAF BU 3 2 6 A is a triple diffused silicon N PN power switching transistor in TO 3 case 3 B 2 DIN 4 18 7 2 . It is outstanding for short switching times and high dielectric strength and is
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653SbQ5
Q62702-U268
fl23SbaS
t 326 Transistor
326 Transistor
BU 103 A transistor
J 326
transistor BU 104
BU326
Q62702-U268
npn transistor w5
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IR 92 0151
Abstract: transistor BU 109 bu326 t 326 Transistor transistor BU 184
Text: MO TO RO LA SC XSTRS/R F 12E D | b3b?2S4 QGâMflQâ 2 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6 AM PERES HIGH VO LTAGE NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS . . . Designed far use in the switch-mode power supplies of colour television receivers.
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AN415A)
IR 92 0151
transistor BU 109
bu326
t 326 Transistor
transistor BU 184
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474F3
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
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IFS75B12N3E4
E1322
FF326DC
FC26E1
2313F
D36134
1231423567896AB
54F36C
4112CD3567896BE
474F3
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Pt100 JUMO 95.6530
Abstract: CAPTEUR PT100 converter analogique numerique Avanta PT100 capteur -20 a 50 5A30V PT100 temperature sensor JUMO sonde pt100 jumo TTL RS232 converter cable pt100 TRANSFER FUNCTION
Text: M. K. JUCHHEIM GmbH & Co Hausadresse: Lieferadresse: Postadresse: Moltkestraße 13 - 31, 36039 Fulda, Germany Mackenrodtstraße 14, 36039 Fulda, Germany 36035 Fulda, Germany Telefon: Telefax: E-Mail: Internet: 0661 6003-725 0661 6003-681 mail@jumo.net www.jumo.net
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Pt100
Messu03
Pt100
TTL/RS232
Pt100 JUMO 95.6530
CAPTEUR PT100
converter analogique numerique
Avanta
PT100 capteur -20 a 50
5A30V
PT100 temperature sensor JUMO
sonde pt100
jumo TTL RS232 converter cable
pt100 TRANSFER FUNCTION
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Untitled
Abstract: No abstract text available
Text: 1-phase Filters FN 2030 General Purpose EMI Filter with High Attenuation Performance n n n n n n Rated currents from 1 to 30A High performance filter attenuation High differential-mode attenuation Optional medical versions B type Optional safety versions (A type)
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C/230V
Mil-HB-217F)
250VAC,
50/60Hz
400Hz
2000VAC
2500VAC
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Untitled
Abstract: No abstract text available
Text: EMC/EMI Products 1-phase Filters FN 2030 General Purpose EMI Filter with High Attenuation Performance • ■ ■ ■ ■ ■ Rated currents from 1 to 30A High performance filter attenuation High differential-mode attenuation Optional medical versions B type
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250VAC,
50/60Hz
400Hz
2000VAC
2500VAC
1100VDC
000schaffner
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Untitled
Abstract: No abstract text available
Text: 1 EMC/EMI Products 1-phase Filters FN 2030 General Purpose EMI Filter with High Attenuation Performance • ■ ■ ■ ■ ■ Rated currents from 1 to 30A High performance filter attenuation High differential-mode attenuation Optional medical versions B type
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250VAC,
50/60Hz
400Hz
2000VAC
2500VAC
1100VDC
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transistor BU 5027
Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d
Text: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im
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KT315
Indikatoransteuerung02
136/G
ASZ1016
transistor BU 5027
transistor KT 816
transistor SD 5024
J 5027-R
bu 5027
KT 817 transistor
Transistor KU 607
MDA 2020
RFT e 355 d
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LifYY11Y
Abstract: No abstract text available
Text: CONNECTORS | CONNETTORI version 110125 M12, coding A, with cable, angled M12, codifica A, con cavo, angolato IEC61076-2-101 round connector; from 2 to 12 poles; male or female; with anti-vibration system; wide cable choice; single head or extension cable;
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IEC61076-2-101
IEC61076-2-101;
LifYY11Y
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Untitled
Abstract: No abstract text available
Text: CONNECTORS | CONNETTORI version 110125 M12, coding A, with cable, straight M12, codifica A, con cavo, diritto IEC61076-2-101 round connector; from 2 to 12 poles; male or female; with anti-vibration system; wide cable choice; single head or extension cable;
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IEC61076-2-101
IEC61076-2-101;
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cables
Abstract: IEC 228, classe 6
Text: page | pagina SECTION 30 Declaration of conformity Company profile Production range 30-2 30-3 30-4 SEZIONE 30 Dichiarazione di conformità Profilo aziendale Gamma produzione SECTION 31 Advice in choosing a cable 31-2 SEZIONE 31 Suggerimenti per scegliere un cavo
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MMN-UKG5-10XC5
MN-UKG5-12XC5
MN-UKG5-14XC5
MN-UKG5-16XC5
cables
IEC 228, classe 6
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connectors
Abstract: LifYY-11Y
Text: CONNECTORS | CONNETTORI version 110125 M12 – coding A or 1/2” UNF – coding C, field attachable, straight M12 – codifica A o 1/2” UNF – codifica C, da cablare, diritto IEC 61076-2-101 round connector; from 4 to 12 poles; male or female; application with sensors
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IEC61076-2-101;
M16x1
connectors
LifYY-11Y
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Transistoren DDR
Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
Text: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60
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SCE237
SCE238
SCE239
SCE308
Transistoren DDR
vergleichsliste
TELEFUNKEN bux 127
aktive elektronische bauelemente ddr
BUX 127
SF 127
vergleichsliste DDR
"vergleichsliste"
bauelemente DDR
sf 369
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FS200R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter
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FS200R06KE3
CEE32
1322D14
CEE326
632CF5CD
1CE73
2313ECEC
3265CDDC14ECF
1231423567896AB2CDEF1B6
54E36F
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transistor kt 326
Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice
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LTC4098-3.6
Abstract: 6N16 l436 SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
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IFS75B12N3T4
CEE32
1322D14
CEE326
732CF5CD
2313ECEC
1231423567896AB2CDEF1B6
54E36F
4112F
LTC4098-3.6
6N16
l436
SXA-01GW-P0.6
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FS100R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter
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FS100R06KE3
CEE32
1322D14
CEE326
632CF5CD
1CE73
2313ECEC
3265CDDC14ECF
1231423567896AB2CDEF1B6
54E36F
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Untitled
Abstract: No abstract text available
Text: CONNECTORS - Special Series | CONNETTORI - Serie Speciali version 110125 M12 or 1/2”, dual key, coding C, with cable, straight M12 o 1/2”, doppia chiave, codifica C, con cavo, diritto IEC61076-2-101 round connector; from 3 to 6 poles; male or female; with M12x1 or 1/2”-20 UN threaded nut;
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IEC61076-2-101
M12x1
IEC61076-2-101;
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY : m o s MASK ROM KM23C32000 32M-BH 2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000 Is a fu lly s tatic mask programmable ROM organized 2,097,152 x 16 bit. It is fabricated using s ilic o n gate CMOS process technolgy.
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KM23C32000
32M-BH
KM23C32000
150ns
100/iA
42-pin,
KM23C32000)
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buv98a
Abstract: buv98
Text: PHILIPS INTERNATIONAL M5E » Bi 711002b 0031127 G E3PHIN BU V98 V BUV98A(V) T-33-13 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m otor control applications on 220 V to 380 V mains supplies.
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711002b
BUV98A
T-33-13
OT227B
BUV98V
V98AV)
BUV98
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Untitled
Abstract: No abstract text available
Text: / P R E LIM IN A R Y >/ KM23C32000 : m o s MASK ROM 32M-BH 2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152 x 16 bit organization The KM23C32000 is a fully static mask programmable ROM organized 2,097,152 x 16 bit It is fabricated using s ilic o n gate CMOS process te ch n o lg y
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KM23C32000
32M-BH
150ns
KM23C32000
KM23C32000)
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A1306 TRANSISTOR
Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
Text: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)
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O-220
T0-220
C67078-
A1300-A2
A1329-A2
A1301-A2
BUZ11
A1301-A3
A1330-A3
A1331-A2
A1306 TRANSISTOR
t a1306
A1306A
A3206A
A1316-A3
A1318
A1309
a1328
A1013
A1300 transistor
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