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    BTW38 600R Search Results

    BTW38 600R Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HD64338600RXXXFTWV Renesas Electronics Corporation Super Low Power, 16-bit Microcomputers (Non Promotion) Visit Renesas Electronics Corporation
    HD64338600RXXXFHV Renesas Electronics Corporation Super Low Power, 16-bit Microcomputers (Non Promotion) Visit Renesas Electronics Corporation
    HD64338600RXXXFHWV Renesas Electronics Corporation Super Low Power, 16-bit Microcomputers (Non Promotion) Visit Renesas Electronics Corporation
    HD64338600RXXXFTV Renesas Electronics Corporation Super Low Power, 16-bit Microcomputers (Non Promotion) Visit Renesas Electronics Corporation
    54122-101060600RLF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded stacking vertical header, through hole, double Row, 6 position, 2.54mm (0.100in) pitch Visit Amphenol Communications Solutions

    BTW38 600R Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BTW38-600R Mullard Quick Reference Guide 1977/78 Scan PDF
    BTW38-600R Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    BTW38-600R Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    BTW38-600R Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BTW38-600R Philips Semiconductors 600V V[drm] Max., 10A I[T] Max. Silicon Controlled Rectifier Scan PDF
    BTW38-600R Philips Semiconductors THYRISTORS Scan PDF

    BTW38 600R Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    btw38-600r

    Abstract: BTW3 BTW38
    Text: BTW38-600R TRIAC PACKAGE STYLE TO-48 DESCRIPTION: The ASI BTW38-600R is a Medium Current scr Designed for General Purpose Power Control Applications. MAXIMUM RATINGS IT 16 A RMS @ Tmb = 85 °C VDRM 600 V I2t 112 A2S @ 10 mS TJ -55 °C to + 125 °C TSTG -55 °C to + 125 °C


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    BTW38-600R BTW3 BTW38 PDF

    btw38

    Abstract: BTW38 Series
    Text: PHILIPS INTERNATIONAL 7110öEb DGb2417 T2D « P H I N bSE D BTW38 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended fo r use in power control circuits e.g. light and m otor control and power switching systems. The series consists o f reverse po larity types (anode to stud) identified by a suffix R: BTW38— 600R to


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    DGb2417 BTW38 BTW38-- 1000R. 38-600R 1000R 711002b 00b2424 BTW38 Series PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE _ b 'lE - » • bbSS'Gl 0027352 3T3 H A P X BTW38 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended fo r use in power control circuits e.g. light and m otor control and power switching systems. The series consists o f reverse polarity types (anode to stud) identified by a suffix R: BTW38—600R to


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    BTW38 BTW38â 1000R. 38-600R 1000R 002735b M1391 00E73Sfl PDF

    BTW38-600R

    Abstract: BTW38 M1388 600R M1389 btw38 600r M1393
    Text: PHILIPS INTERNATIONAL b5E D • 7110 ö S b QQbSHl? TSD M P H I N BTW 38 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended fo r use in power control circuits e.g. light and m otor control and power switching systems. The series consists o f reverse polarity types (anode to stud) identified by a suffix R: BTW38— 600R to


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    Q0b2417 BTW38 BTW38â 1000R. 1000r BTW38-600R. M1394 BTW38-600R M1388 600R M1389 btw38 600r M1393 PDF

    BTW38-600R

    Abstract: BTW38 600R 800R 1000R M1386
    Text: N AMER PHILIPS/DISCRETE t.'ìE J> m ^53=131 G027355 3T3 H A P X BTW38 SERIES THYRISTORS Glass-passivated silicon th y ris to rs in m etal envelopes, intended fo r use in pow er c o n tro l c ircu its e.g. lig h t and m o to r c o n tro l and pow er sw itching systems.


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    G027355 BTW38 BTW38â 1000R. 1000r BTW38-600R. BTW38-600R 600R 800R 1000R M1386 PDF

    BTW42-600R

    Abstract: TSM 1250 1000R mml 600 600R BTW38 BTW42 BTW42-600RC
    Text: PHILIPS bSE D INTERNA TI ON AL Jl B 711Dfl2b DDb5431 3TD • P H I N BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V p /d t capabilities. They are intended fo r use in power control circuits and switching systems where high transients can occur e.g. phase


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    DDbS43i BTW42 BTW42â 1000R. 1000r BTW38 BTW42-600R TSM 1250 1000R mml 600 600R BTW42-600RC PDF

    BTW42

    Abstract: BTW42-600R
    Text: L.5E D P H I L IP S I N T E R N A T I O N A L B 7 1 1 D ä 2 b DGt.5431 3TD • P H I N Jl BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V p /d t capabilities. They are intended fo r use in power control circuits and switching systems where high transients can occur e.g. phase


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    BTW42 BTW42--600R 1000R. 711002b BTW38 BTW42-600R PDF

    Untitled

    Abstract: No abstract text available
    Text: _M_ N AMER PHILIPS/DISCRETE btiSBTBl 0011=143 T • QbE D I BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes with high d V ^ /d t capabilities. They are intended for use in power control circuits and switching systems where high transients can occur (e.g. phase


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    BTW42 BTW42â 1000R. BTW42--600 1000R BTW38 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bb53^31 0D273bb 'Hfl • APX b'lE J> I B T W 4 2 SERIES _ THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V [j/d t capabilities. They are intended for use in power control circuits and switching systems where high transients can occur e.g. phase


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    0D273bb BTW42â 1000R. 42-600R 1000R 0D273bT BTW42 BTW38 PDF

    TSM 1250

    Abstract: BTW42 BTW38 800R BTW42-600R BTW42-600RC IEC134
    Text: fcjbS3c131 QDll':i43 T ObE D N AMER PHI LIPS/ DI SC RE TE BTW42 SERIES ^T~-ar-/£~ THYRISTORS Glass-passivated silicon thyristors in metal envelopes with high dVp/dt capabilities. They are intended for use in power control circuits and switching systems where high transients can occur e.g. phase


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    BTW42 BTW42-600R 1000R. BTW42- 1000R 0011m BTW38 TSM 1250 800R BTW42-600RC IEC134 PDF

    BTW47-1200R

    Abstract: BTW23-600R BTW31 600 BTW92 BTW24-600R bt151 bTW47 BTW45-600R BTW31 BTW33
    Text: Thyristors and triacs book 1 part 5 abridged data of principal types GENERAL PURPOSE THYRISTORS The type number suffix is the V RRM rating. The additional suffix R denotes reversed, anode to stud, polarity Type No. Characteristics Ratings Drawing reference


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    BTX18 T0-220AB) BTW38 1200R BTY79 -600R h--22-> crt6-25 BTW47-1200R BTW23-600R BTW31 600 BTW92 BTW24-600R bt151 bTW47 BTW45-600R BTW31 BTW33 PDF

    OT239

    Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
    Text: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to


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    PDF

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 PDF

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


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    Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367 PDF