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    BTC4505N3 Search Results

    BTC4505N3 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BTC4505N3 Comchip Technology High Voltage Transistor (NPN) Original PDF
    BTC4505N3 CYStech Electronics High Voltage NPN Epitaxial Planar Transistor Original PDF

    BTC4505N3 Datasheets Context Search

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    sot-23 MARKING CODE 3d

    Abstract: BTA1759N3 BTC4505N3 MARKING 3D SOT-23
    Text: Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTC4505N3 Features • High breakdown voltage. BVCEO =400V • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA.


    Original     		PDF C210N3 BTC4505N3 10mA/1mA. BTA1759N3 OT-23 UL94V-0 sot-23 MARKING CODE 3d BTA1759N3 BTC4505N3 MARKING 3D SOT-23

    transistor P 0225

    Abstract: BTC4505N3 sot23 reb Transistor npn REB SOT23
    Text: High Voltage Transistor NPN COMCHIP www.comchiptech.com BTC4505N3 Features High breakdown voltage. (BVceo =400V) Low saturation voltage, typically Vce(sat) =0.1V at Ic/Ib=10mA/1mA C COLLECTOR 3 SOT-23 1 BASE .119 (3.0) .110 (2.8) 2 .020 (0.5) Top View .020 (0.5)


    Original     		PDF BTC4505N3 10mA/1mA OT-23 MDS0405003A 10MHz transistor P 0225 BTC4505N3 sot23 reb Transistor npn REB SOT23

    4z sot23 marking code

    Abstract: marking 4z sot-23 BTA1759N3 BTC4505N3 pnp transistor 300v sot23
    Text: CYStech Electronics Corp. Spec. No. : C309N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTA1759N3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA.


    Original     		PDF C309N3 BTA1759N3 -400V) -20mA/-2mA. BTC4505N3. OT-23 UL94V-0 4z sot23 marking code marking 4z sot-23 BTA1759N3 BTC4505N3 pnp transistor 300v sot23