BS616LV1626 Search Results
BS616LV1626 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| BS616LV1626 | Brilliance Semiconductor | Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM | Original | |||
| BS616LV1626TC | Brilliance Semiconductor | Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8-Bit switchable | Original | |||
| BS616LV1626TI | Brilliance Semiconductor | Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8-Bit switchable | Original |
BS616LV1626 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TSOP1-48Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BS616LV1626 FEATURES DESCRIPTION • Vcc operation voltage : 4.5 ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 113mA @55ns operating current I -grade: 115mA (@55ns) operating current |
Original |
BS616LV1626 113mA 115mA x8/x16 BS616LV1626 S616LV1626 -40oC TSOP1-48 | |
TSOP1-48
Abstract: sae a14 BS616LV1626 BS616LV1626TC BS616LV1626TI
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Original |
BS616LV1626 113mA 115mA x8/x16 BS616LV1626 -40oC TSOP1-48 12mmx20mm) sae a14 BS616LV1626TC BS616LV1626TI |