9883
Abstract: No abstract text available
Text: GBI 10A . GBI 10M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter /4 Inline bridge Silicon-Bridge Rectifiers GBI 10A . GBI 10M Publish Data Features
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Untitled
Abstract: No abstract text available
Text: For partial switching PFC Integrated IGBT and Diode Bridge Rectifier SLA5222 Features Package SLA5222 incorporates IGBT and diodes for bridge rectifier of partial switching PFC, and achieves board space reduction. Low Saturation Voltage IGBT Low VF Diode Bridge Rectifier
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SLA5222
SLA5222
SLA5222-DS
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TB1010
Abstract: TB1010 bridge tb106 aj rectifier epoxy 5000 taitron TB1005 TB101 TB102 TB104 TB108
Text: SINGLE-PHASE BRIDGE RECTIFIER TB1005 ~ TB1010 10A Single-Phase Bridge Rectifier Features • High forward surge current capability • Ideal for printed circuit board • High temperature soldering guaranteed: 260°C/10 seconds, 0.375" 9.5mm lead length,
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TB1005
TB1010
MIL-STD-202E
TB101
TB102
TB104
TB106
TB108
TB1010
TB1010 bridge
tb106
aj rectifier
epoxy 5000 taitron
TB1005
TB101
TB102
TB104
TB108
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SML-010
Abstract: SML010FBD
Text: SILICON CARBIDE POWER SCHOTTKY RECTIFIER DIODE BRIDGE SML010FBDH06 • 600V, 10A Full Bridge Rectifier Configuration • High Temperature Operation Tj = 200°C • Effective Zero Reverse and Forward Recovery • High Speed Low Loss Switching • High Frequency Operation
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SML010FBDH06
O258D
MO-078AA)
SML-010
SML010FBD
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SML-010
Abstract: No abstract text available
Text: SILICON CARBIDE POWER SCHOTTKY RECTIFIER DIODE BRIDGE SML010FBDH12 • 1200V, 10A Full Bridge Rectifier Configuration • High Temperature Operation Tj = 200°C • Effective Zero Reverse and Forward Recovery • High Speed Low Loss Switching • High Frequency Operation
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SML010FBDH12
Storag096
O258D
MO-078AA)
SML-010
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ULTRAFAST 10A 600V
Abstract: Ultrafast Recovery Rectifier Bridge LE17 MO-078AA SML010FBDH06 4 pin bridge rectifier package diode 10a 600v
Text: SILICON CARBIDE POWER SCHOTTKY RECTIFIER DIODE BRIDGE SML010FBDH06 • 600V, 10A Full Bridge Rectifier Configuration • High Temperature Operation Tj = 200°C • Effective Zero Reverse and Forward Recovery • High Speed Low Loss Switching • High Frequency Operation
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SML010FBDH06
O258D
MO-078AA)
ULTRAFAST 10A 600V
Ultrafast Recovery Rectifier Bridge
LE17
MO-078AA
SML010FBDH06
4 pin bridge rectifier package
diode 10a 600v
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10A Schottky bridge
Abstract: 4 pin bridge rectifier package Schottky bridge LE17 MO-078AA 1200v 10a Silicon Carbide Schottky Rectifier 1200V 10A SML-010 Silicon Carbide Schottky Rectifier Bridge
Text: SILICON CARBIDE POWER SCHOTTKY RECTIFIER DIODE BRIDGE SML010FBDH12 • 1200V, 10A Full Bridge Rectifier Configuration • High Temperature Operation Tj = 200°C • Effective Zero Reverse and Forward Recovery • High Speed Low Loss Switching • High Frequency Operation
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SML010FBDH12
Ran96
O258D
MO-078AA)
10A Schottky bridge
4 pin bridge rectifier package
Schottky bridge
LE17
MO-078AA
1200v 10a
Silicon Carbide Schottky Rectifier 1200V 10A
SML-010
Silicon Carbide Schottky Rectifier Bridge
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Untitled
Abstract: No abstract text available
Text: S469-01 S469-02 S469-03 S469-04 S469-05 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4306, REV. A SINGLE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: A 10A, 5000 NANOSECOND SINGLE PHASE BRIDGE RECTIFIER ASSEMBLY. AVAILABLE IN 200V, 600V AND 1000V.
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S469-01
S469-02
S469-03
S469-04
S469-05
S469-05
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S50A3100
Abstract: No abstract text available
Text: SENSITRON _ SEMICONDUCTOR S50A3100 TECHNICAL DATA DATA SHEET 2050, REV - THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: 1000 VOLT, 50 AMP, 5 MICROSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. MAX. RATINGS / ELECTRICAL CHARACTERISTICS RATING
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S50A3100
S50A3100
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1006G
Abstract: 1008G 1004G 100A CURRENT SINGLE PHASE bridge rectifier TU1010G TU1000G single phase bridge rectifier 100A thermal 10A bridge 1001G 1002G
Text: 10A Glass Passivated Bridge Rectifier TU1000G – TU1010G 10A Glass Passivated Bridge Rectifier Features • • • • • Glass passivated chip junction Low forward voltage drop High reliability Ideal for printed circuit boards High temperature soldering guaranteed: 250° C/10 seconds
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TU1000G
TU1010G
MIL-STD-202,
1000G
1001G
1002G
1004G
1006G
1008G
1004G
100A CURRENT SINGLE PHASE bridge rectifier
TU1010G
TU1000G
single phase bridge rectifier 100A thermal
10A bridge
1001G
1002G
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S50A360FR
Abstract: No abstract text available
Text: SENSITRON _ SEMICONDUCTOR S50A360FR TECHNICAL DATA DATA SHEET 200, REV C THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: 600 VOLT, 50 AMP, 180 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. MAX. RATINGS / ELECTRICAL CHARACTERISTICS RATING
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S50A360FR
S50A360FR
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S50A3100FR
Abstract: No abstract text available
Text: SENSITRON _ SEMICONDUCTOR S50A3100FR TECHNICAL DATA DATA SHEET 198, REV A THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: 1000 VOLT, 45 AMP, 175 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. MAX. RATINGS / ELECTRICAL CHARACTERISTICS RATING
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S50A3100FR
S50A3100FR
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S50A360FR
Abstract: S50A340FR
Text: SENSITRON _ SEMICONDUCTOR S50A360FR S50A340FR TECHNICAL DATA DATA SHEET 200, REV D THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: 600 VOLT, 50 AMP, 195 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. MAX. RATINGS / ELECTRICAL CHARACTERISTICS
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S50A360FR
S50A340FR
S50A360FR
S50A340FR
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S469-01
Abstract: S469-02 S469-03 S469-04 S469-05
Text: S469-01 S469-02 S469-03 S469-04 S469-05 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4306, REV. B SINGLE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: A 10A, 5000 NANOSECOND SINGLE PHASE BRIDGE RECTIFIER ASSEMBLY. AVAILABLE IN 200V, 400V, 600V, 800V AND 1000V.
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S469-01
S469-02
S469-03
S469-04
S469-05
S469-01
S469-02
S469-03
S469-04
S469-05
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Untitled
Abstract: No abstract text available
Text: 10 AMP GLASS PASSIVATED BRIDGE RECTIFIER GBU10A – GBU10K 10 AMP Glass Passivated Bridge Rectifier Features • Glass Passivated Die Construction • Low Forward Voltage Drop • High Reliability • Ideal for Printed Circuit Boards GBU Mechanical Data Case:
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GBU10A
GBU10K
MIL-STD-202,
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GBJ20005 taitron
Abstract: GBJ20005 GBJ2010
Text: Single-Phase Glass Passivated Bridge Rectifier GBJ20005 – GBJ2010 Single-Phase Glass Passivated Bridge Rectifier Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Glass passivated die construction • High case dielectric strength of 1500 VRMS
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GBJ20005
GBJ2010
E194718
MIL-STD-202,
GBJ20005 taitron
GBJ20005
GBJ2010
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gbu 10j
Abstract: 100A CURRENT SINGLE PHASE bridge rectifier gbu 10k GBU10A GBU10K
Text: 10 A Glass Passivated Bridge Rectifier GBU10A – GBU10K 10 A Glass Passivated Bridge Rectifier Features • Glass Passivated Chip Junction • Low Forward Voltage Drop • High Reliability • Ideal for Printed Circuit Boards • High temperature soldering guaranteed: 260˚C/10 seconds
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GBU10A
GBU10K
MIL-STD-202,
10TAITFAX
gbu 10j
100A CURRENT SINGLE PHASE bridge rectifier
gbu 10k
GBU10A
GBU10K
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ir igbt 1200V 10A
Abstract: APTGS10X120BTP2 APTGS10X120RTP2
Text: APTGS10X120RTP2 APTGS10X120BTP2 Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module VCES = 1200V IC = 10A @ Tc = 80°C Application • AC Motor control Features Non Punch Through NPT Low Loss IGBT - Low voltage drop - Low tail current
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APTGS10X120RTP2
APTGS10X120BTP2
APTGS10X120RTP2:
ir igbt 1200V 10A
APTGS10X120BTP2
APTGS10X120RTP2
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APTGF10X60BTP2
Abstract: APTGF10X60RTP2 IGBT parallel rectifier bridge 300v 30a Fast Recovery Rectifier, 300V
Text: APTGF10X60RTP2 APTGF10X60BTP2 Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module VCES = 600V IC = 10A @ Tc = 80°C Application • AC Motor control Features Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz
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APTGF10X60RTP2
APTGF10X60BTP2
APTGF10X60RTP2:
APTGF10X60BTP2
APTGF10X60RTP2
IGBT parallel
rectifier bridge 300v 30a
Fast Recovery Rectifier, 300V
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DISC THYRISTOR
Abstract: No abstract text available
Text: SKN 6000 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Rectifier Diode SKN 6000 &'' & 7+ ;+ & 7+ ;+ ,& 0+ , -1 *2+3 4 ) 25 6/
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222 diode
Abstract: B 80 bridge rectifier thyristor 60 A DISC THYRISTOR
Text: SKN 4000 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Rectifier Diode SKN 4000 &'' & 9, 1, & 9, 1, -& 1, - .2 34,5 6 ) 7, 80
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GBJ20005
Abstract: GBJ2010
Text: SINGLE-PHASE GLASS PASSIVATED BRIDGE RECTIRIER GBJ20005 – GBJ2010 Single-Phase Glass Passivated Bridge Rectifier Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Glass passivated die construction • High case dielectric strength of 1500 VRMS
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GBJ20005
GBJ2010
E194718
MIL-STD-202,
GBJ20005
GBJ2010
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s50a360fr
Abstract: No abstract text available
Text: ▼SENSITRON_ S50A360FR SEMICONDUCTOR TECHNICAL DATA DATA SHEET 200, REV - THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: 600 VOLT, 50 AMP, 150 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. MAX. RATINGS / ELECTRICAL CHARACTERISTICS RATING
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S50A360FR
SECLS00132
S50A360FR
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4.7 B2 glass diodes
Abstract: 1N400* series 1N4001 general diode purpose surface mount tic 41
Text: CONTENTS ALPHA/NUMERIC LISTING OF PART N UM . 3 BRIDGE RECTIFIER AND DIODE . 4
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