DBA500G
Abstract: diode 50A
Text: DBA500G Ordering number : ENA0699 SANYO Semiconductors DATA SHEET DBA500G Diffused Junction Silicon Diode 50A Single-Phase Bridge Rectifier Features • • • Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=50A. Specifications
|
Original
|
DBA500G
ENA0699
A0699-3/3
DBA500G
diode 50A
|
PDF
|
DBA500G
Abstract: No abstract text available
Text: DBA500G Ordering number : ENA0699A SANYO Semiconductors DATA SHEET DBA500G Diffused Junction Silicon Diode 50A Single-Phase Bridge Rectifier Features • • • Plastic molded structure Peak reverse voltage : VRM=600V Average output current : IO=50A Specifications
|
Original
|
DBA500G
ENA0699A
A0699-3/3
DBA500G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTGT50H60RT3G Full bridge + rectifier bridge Trench + Field Stop IGBT3 Power Module VCES = 600V IC = 50A @ Tc = 80°C Application • Solar converter Features Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz
|
Original
|
APTGT50H60RT3G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTGT50H60RT3G Full bridge + rectifier bridge Trench + Field Stop IGBT3 Power Module VCES = 600V IC = 50A @ Tc = 80°C Application • Solar converter Features • Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz
|
Original
|
APTGT50H60RT3G
the1000
|
PDF
|
APTGT50H60RT3G
Abstract: No abstract text available
Text: APTGT50H60RT3G Full bridge + rectifier bridge Trench + Field Stop IGBT3 Power Module VCES = 600V IC = 50A @ Tc = 80°C Application • Solar converter Features • Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz
|
Original
|
APTGT50H60RT3G
APTGT50H60RT3G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Application • Solar converter
|
Original
|
APTCV60HM70RT3G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTCV60HM45RCT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter
|
Original
|
APTCV60HM45RCT3G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter
|
Original
|
APTCV60HM45RT3G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTCV60HM45RCT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter
|
Original
|
APTCV60HM45RCT3G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45m max @ Tj = 25°C Application • Solar converter
|
Original
|
APTCV60HM45RT3G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTCV60HM45RCT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45m max @ Tj = 25°C Application • Solar converter
|
Original
|
APTCV60HM45RCT3G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70m max @ Tj = 25°C Application • Solar converter
|
Original
|
APTCV60HM70RT3G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter
|
Original
|
APTCV60HM45RT3G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Application • Solar converter
|
Original
|
APTCV60HM70RT3G
|
PDF
|
|
|
APTGT50X120BTP3
Abstract: APTGT50X120RTP3 dt99
Text: APTGT50X120RTP3 APTGT50X120BTP3 Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module VCES = 1200V IC = 50A @ Tc = 80°C Application • AC Motor control Features Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current
|
Original
|
APTGT50X120RTP3
APTGT50X120BTP3
APTGT50X120RTP3:
APTGT50X120BTP3
APTGT50X120RTP3
dt99
|
PDF
|
tyco igbt
Abstract: D8135 igbt tyco
Text: V23990-P185-A10 flow PIM 2, 600V, 50A Version 0601 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Input Rectifier Bridge Gleichrichterbrücke Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung
|
Original
|
V23990-P185-A10
D81359
tyco igbt
D8135
igbt tyco
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT50DL60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IF = 50A @ Tc = 80°C Application • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~
|
Original
|
APT50DL60HJ
OT-227)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 10-FY06BIA050SG-M523E18 preliminary datasheet flowSOL 1 BI 600V/50A Features flow1 12mm housing ● Low inductive 12mm flow1 package ● Booster: ○ Dual boost topology ○ High-speed IGBT + ultrafast FWD ○ Bypass rectifier ● Inverter: ○ H-bridge topology
|
Original
|
10-FY06BIA050SG-M523E18
00V/50A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT50DL60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IF = 50A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • • +
|
Original
|
APT50DL60HJ
OT-227)
|
PDF
|
igbt 500V 50A
Abstract: mosfet 500V 50A mosfet 600V 50A
Text: International ^Rectifier Provisional Data Sheet PD-9.1191 IRGTIN050K06 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 50A V ce ON < 2.7V • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all “tail" losses •Short circuit rated
|
OCR Scan
|
IRGTIN050K06
Outline11
C-1004
S5452
igbt 500V 50A
mosfet 500V 50A
mosfet 600V 50A
|
PDF
|
tyco igbt
Abstract: tyco igbt 1200V V23990-K249-A-PM miniskiip 2 miniskiip igbt tyco pim miniskiip 29 igbt tyco
Text: V23990-K249-A-PM preliminary datasheet V23990-K249-A-01-14 MiniSKiiP 2nd Gen. PIM Size 3, 1200V / 50A Maximum Ratings / Höchstzulässige Werte Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Symbol Values max. Unit
|
Original
|
V23990-K249-A-PM
V23990-K249-A-01-14
Tj125
D-85521
Page14
Page15
tyco igbt
tyco igbt 1200V
V23990-K249-A-PM
miniskiip 2
miniskiip igbt
tyco pim
miniskiip 29
igbt tyco
|
PDF
|
Untitled
Abstract: No abstract text available
Text: International k*r]Rectifier Provisional Data Sheet PD-9.1155 IRGTIN050M06 Low conduction loss IGBT "HALF-BRIDGE" IGBT INT-A-PAK VŒ = 600V lc = 50A Vce ON < 2.0V .Rugged Design • Simple gate-drive .Switching-Loss Rating includes all "tail" losses • Short circuit rated
|
OCR Scan
|
IRGTIN050M06
0utline11
C-444
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT50DL120HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 1200V IF = 50A @ Tc = 80°C Application • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~
|
Original
|
APT50DL120HJ
OT-227)
|
PDF
|
NTE53016
Abstract: NTE53020 bridge rectifier 50A NTE53018 RECTIFIER BRIDGE 25A 600V
Text: NTE53016 thru NTE53020 Silicon Bridge Rectifier, 50A Features: D Diffused Junction D Low Reverse Leakage Current D Low Power Loss, High Efficiency D Electrically Isolated, Low Profile Epoxy Case for Maximum Heat Dissipation D Mounting: Through Hole with #10 Screw
|
Original
|
NTE53016
NTE53020
NTE53016
NTE53018
NTE53020
bridge rectifier 50A
NTE53018
RECTIFIER BRIDGE 25A 600V
|
PDF
|
