BR V7 Search Results

VRINX

Abstract: loudness control
Contextual Info: CXA1946BQ/BR Electronic Volume For the availability of this product, please contact the sales office. Description The CXA1946BQ/BR is a serial control electronic volume IC designed for use in audio systems. 48 pin QFP Plastic 48 pin LQFP (Plastic) Features

QFP048-P-1212B

Contextual Info: CXA1946BQ/BR Electronic Volume Description The CXA1946BQ/BR is a serial control electronic volume IC designed for use in audio systems. 48 pin QFP Plastic 48 pin LQFP (Plastic) Features • Loudness • Volume control (0dB to –87dB in 1dB step, –∞dB)

44e 938

Abstract: 2602B PBV 0,01 U2602 u2602br 7644E ms4u A 2602 16 pin A 2602 8 pin U2602B
Contextual Info: 44E D • 4S > Ö^EOO^b 0010413 1 ■ A L G G U 2602 BR * U 2602 BR-FP ZERO VOLTAGE SWITCH Temperature Control and or Safety Switch-off in Irons Technology: Bipolar TELEFUNKEN ELECTRONIC Features: • Voltage monitoring • Full wave logic/automatic pulse phase

SIEMENS THYRISTOR

Abstract: VDR Siemens SIEMENS THYRISTOR br303 thyristor siemens SIEMENS THYRISTOR F04 RQK-10
Contextual Info: 2SC D • A53SL.D5 000475" ISIE6 BR 303 Silicon Miniature Thyristor SIEMENS AKTIENGESELLSCHAF BR 303 is a silicon planar thyristor in a TO-126 plastic package 12 A 3 DIN 41869, sheet 4). The thyristor is especially suitable for use in switching power supplies as well as for

BC158B

Abstract: BC158A LOW-POWER SILICON PNP 2SA677 2SA628 226M 2SA550
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 PN6076 V761 2SA628 L9015 L9015 MPS6172 BC186 MPS3638A BCX18 BCX18R Manufacturer CentralSemi SGS-Ates Solid Stlnc Semi Inc Advncd Semi Motorola See Index See Index See Index FerrantiLtd

BF441

Abstract: BF440 224AA G-T40N KT361 A5T3906 BFW90 LOW-POWER SILICON PNP 75n80 2N601
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 2N3905 2N5382 BC126A BC126A BC126A BSX36 PH2907R SOR2907 (A) HSE402 MMBT4403 MMBT440~ 15 20 25 30 MMBT4403 A5T4403 2N4403 SF106 P2N2907 MPS6517 TMPT2907 TMPT4403 A5T3905 SF222 SF322 2N4143 B5W75

Contextual Info: BR.GL 10A/15A/25A/35A SERIES GLASS PASSIVATED REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1 0 - 3 5 Amperes BRIDGE RECTIFIERS METAL HEAT S ir « EPOXY CASE FEATURES • Plastic case w ith heatsink for heat dissipation I 1 4 0 3 .6 120 <3 05 )

diodes herrmann

Abstract: DIODE REDRESSEMENT DIODE REDRESSEMENT herrmann diode 1600 rectifier 745 diodes REDRESSEMENT Herrmann hdi 360 Avalanche diodes T7 DIODE
Contextual Info: " P O 1-Z-1 HERRMANN KG •4SE ì> m 443L275 ODDOOßö S • HRMN Dioden, Avalanche-Dioden Rectifier Diodes, Avalanche Diodes Diodes de redressement, Diodes avalanche Diodentyp Type of diode Type de diode 'fsm V rrm V BR *FAVM 'frm s V V A A fi2dt A2S A

Contextual Info: Automotive ProASIC 3 Datasheet P ro du c t Br ie f ® 1 – Automotive ProASIC®3 Flash Family FPGAs Features and Benefits Low Power High-Temperature AEC-Q100–Qualified Devices • • • Grade 2 105°C TA 115°C TJ Grade 1 125°C TA (135°C TJ) PPAP Documentation

Contextual Info: Automotive ProASIC 3 Datasheet P ro du c t Br ie f ® 1 – Automotive ProASIC®3 Flash Family FPGAs Features and Benefits Low Power High-Temperature AEC-Q100–Qualified Devices • • • Grade 2 105°C TA 115°C TJ Grade 1 125°C TA (135°C TJ) PPAP Documentation

MC68360

Contextual Info: MC68360 BGA PIN ASSIGNMENT C 1997 Motorola PIN NAME PIN NAME A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 NC NC CAS1/IACK2 NC DSACK0/TB1 PRTY2/IOUT0/RQOUT PRTY0/IOUT2 IPIPE1/RAS1DD/BCLRI NC NC1 BR IRQ4/IOUT1 RESETh TDI RMC/CONFIG0/LOCK BERR/TEA

itt 2222a

Abstract: itt 2907A motorola diode cross reference PTZA92 2222a pinout ZTA14 PTZA42 2907A bs33 zta96
Contextual Info: MOTOROLA SC XSTRS/R MbE D F b3b?5SH GGTbSlb S • MOTb T ^ b O l ■ V " : SOT-22 ■•••.' , '¿»1%,»* 'f-f » Maximum die size Switching Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector hFE Device <T Marking ton toff v (BR)CEO Min

IO125

Abstract: IO05PDB0V0 IO32PDB1V1 A3PE600
Contextual Info: ProASIC 3E Datasheet P ro du c t Br ie f 1 – ProASIC®3E Flash Family FPGAs with Optional Soft ARM®Support Features and Benefits Pro Professional I/O • • • • High Capacity • • • 600 k to 3 Million System Gates 108 to 504 kbits of True Dual-Port SRAM

Contextual Info: IGLOO Datasheet P ro du c t Br ie f 1 – IGLOO™ Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Advanced I/O • • • • Low Power • • • • • • 1.2 V or 1.5 V Core Voltage for Low Power Supports Single-Voltage System Operation

br 8892

Contextual Info: IGLOO Datasheet P ro du c t Br ie f 1 – IGLOO™ Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Advanced I/O • • • • Low Power • • • • • • 1.2 V or 1.5 V Core Voltage for Low Power Supports Single-Voltage System Operation

IO32PDB1V1

Abstract: IO283PDB7V1
Contextual Info: IGLOO e Datasheet P ro du c t Br ie f 1 – IGLOO™e Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Low Power • • • • • 1.2 V or 1.5 V Core Voltage for Low Power Supports Single-Voltage System Operation Low-Power Active FPGA Operation from 25 µW

IO32PDB1V1

Contextual Info: IGLOOe Datasheet P ro du c t Br ie f 1 – IGLOO e Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Low Power • • • • • 1.2 V or 1.5 V Core Voltage for Low Power Supports Single-Voltage System Operation Low-Power Active FPGA Operation from 25 µW

marking D76

Contextual Info: D IO D E S SOT-23/TO-236AB ‘TMPD’ GENERAL-PURPOSE DIODES ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type Description •f v BR Min. Max. Marking Max. mA (V) 5D 600 100 T M P D 9 14 G e n e ral-P u rpo se TM P D 4 14 8 G e n e ral-P u rpo se 5D

Contextual Info: 10 Molex LOGO DATE CODE 1P 7 f i SHELL ns 0O.92±O.O5 HOUSING NOTES: 1. M ATER IAL: HOUSING: NYLON P A 9 T . FIBER G LA S S FILLE D . U L 9 4 V -0 . COLOR:BLACK. TERM INAL: PHOSPHOR BRONZE. M E TA L S H E LL: BR ASS. 2. FINISH: TERMINAL: S E LE C TIV E GOLD Au IN CONTACT A R E A ,

scr 106d

Abstract: SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226
Contextual Info: f l ✓ SCR IN METAL PACKAGE TO -3 9 T O - 18 0 ,6 A 15V 2N876 2N884 30V 2N877 2N 8 8 5 0 ,8 A RMS 2N3001 2N3005 TAG 0 ,8 A RMS 06Y BR 203 50V v v DRM RRM B L O C K IN G V O LT A G E 60V 2N878 2N886 2N3002 2N 3006 TAG 0 6 Y Y 100V 2N879 2N 887 2N 3 0 0 3 2N 3007

SCR 2N1595

Abstract: scr tag 2 TAG SCR br 203 tag scr SCR TAG SCR 2N1599 TAG 203 TAG 2-50 tag br 203 2N4214
Contextual Info: f l ✓ SCR IN METAL PACKAGE T O -3 9 T O - 18 15V 2N 8 76 2N884 30V 2N 8 77 2N885 2N3001 2N 3 0 0 5 TAG 06 Y BR 203 50V v v DRM RRM B L O C K IN G V O LT AG E 60V 2N 8 78 2N 8 86 2N 3 002 2N 3 0 0 6 TAG 0 6 Y Y 100V 2N 8 79 2N887 2N 3003 2N 3 0 0 7 TAG 06 A

b974

Abstract: V7-1Z29D94
Contextual Info: I FO-50360-L CW-B9742 NOTES 1 - MA XI MUM M E C H A N I C A L DEAD BR EA K T H I S S W I T C H C O N S T R U C T I ON OE 0025 MA Y BE 9 I REV DOCUMENT 3 206280 4 0001305 10 CHANGED TSM BY CHECK 30AUG02 SAV CSL 2SEP03 SAV EXPECTED 40 _ C H A R A C T E R I S T I C S _

maxim max 1987

Abstract: L4970 maxim 1987 maxim 1987 pwm SGS Transistor
Contextual Info: 0.\ \ LINEAR INTEGRATED CIRCUIT ^ L4970 o f|'3 006911 bR /1 A D V A N C E D DATA H IGH C U R R E N T S W I T C H I N G R E G U L A T O R The L4970 is a s t e p d o w n power s wi t c h i n g r egulator d el iv e r i n g 10A at a vo lt ag e v a r i a b l e

P57-P52

Abstract: K72 V3 BM11129 TMP95CW64 TMP95PW64 TMP95PW64F dz p75 7kwx
Contextual Info: TOSHIBA JÜS t U CMOS 16 t: 7 h 7 < i Q 3 > h P - 7 T L C S - 9 0 0 /H v ' J - x TMP95PW64 tt i; » id £<7 j £ ß # * ± 16ti y h v < ^ p = l > h P - ^ T L C S - 900/ H v U - X s TMP95PW64Í: * l £ s i £ r {&m ± D :, ì m , j u s t o I i J U Ì A ^ ( z j : o T ^ - ; u ht f «i £f BRÉ - f * ¿ : ¿ ^ ÿ S t ^