c1815 SOT-23
Abstract: transistor c1815 data C1815 transistor c1815 sheet C1815 data 30MHZ C1815 NPN Transistor data transistor C1815 transistor c1815 c1815 hf
Text: C1815 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.15 mA * Collector-base voltage V(BR)CBO : 60 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C
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C1815
OT-23
OT-23
MIL-STD-202E
c1815 SOT-23
transistor c1815 data
C1815
transistor c1815 sheet
C1815 data
30MHZ
C1815 NPN Transistor
data transistor C1815
transistor c1815
c1815 hf
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C1815 NPN Transistor
Abstract: C1815 TO92
Text: TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.4 W (Tamb=25℃) 3. BASE Collector current 0.15 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range
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C1815
100mA,
30MHz
C1815 NPN Transistor
C1815 TO92
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TO—92 TRANSISTOR( NPN ) 1.EMITTER FEATURES 2.COLLECTOR Power dissipation PCM : 0.4 W(Tamb=25℃) Collector current ICM : 0.15 A Collector-base voltage V BR CBO : 60
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C1815
30MHz
270TYP
050TYP
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Untitled
Abstract: No abstract text available
Text: C1815LT1 C1815LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 0. 4 0. 95 TJ, Tstg: -55 2. 9 Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range to +150
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C1815LT1
OT-23
30MHz
C1815LT1
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C1815 GR
Abstract: C1815 y transistor c1815 c1815 transistor OF C1815 GR C1815 transistor C1815 y C1815 bl C1815 equivalent C1815 GR IE
Text: C1815 C1815 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.4 W (Tamb=25℃) 3. BASE Collector current ICM: 0.15 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃
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C1815
100mA,
30MHz
C1815 GR
C1815 y
transistor c1815
c1815 transistor
OF C1815 GR
C1815
transistor C1815 y
C1815 bl
C1815 equivalent
C1815 GR IE
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c1815 gr h
Abstract: C1815 GR transistor C1815 C1815 GR 7 J c1815 c1815 transistor C1815 GR 7 A C1815 y npn c1815 OF C1815 GR
Text: C1815 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES Power dissipation o P CM :0.4 W (Tamb=25 C) Collector current I CM :0.15 A Collector-base voltage V (BR)CBO :60 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C
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C1815
c1815 gr h
C1815 GR
transistor C1815
C1815 GR 7 J
c1815
c1815 transistor
C1815 GR 7 A
C1815 y
npn c1815
OF C1815 GR
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors C1815LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range
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OT-23
C1815LT1
OT-23
30MHz
C1815LT1
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c1815
Abstract: C1815LT1 C1815LT1 HF C1815L
Text: C1815LT1 C1815LT1 TRANSISTOR NPN SOT-23 * “G” Lead(Pb)-Free 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 0. 4 0. 95 TJ, Tstg: -55 2. 9 Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range
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C1815LT1
OT-23
60llector
30MHz
C1815LT1
c1815
C1815LT1 HF
C1815L
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C1815L
Abstract: AV1815LT1 C1815LT1 AV1815
Text: @vic AV1815LT1 SOT-23 Plastic-Encapsulate Transistors AV1815LT1 SOT—23 TRANSISTOR( NPN ) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR 1.0 Power dissipation PCM : 0.2 W(Tamb=25℃) Collector current ICM: 0.15 A Collector-base voltage V BR CBO : 60
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AV1815LT1
OT-23
OT--23
037TPY
950TPY
550REF
022REF
C1815L
AV1815LT1
C1815LT1
AV1815
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.4 W (Tamb=25℃) 3. BASE Collector current 0.15 A ICM: Collector-base voltage 60
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C1815
100mA,
30MHz
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C1815 transistors
Abstract: transistors c1815 C1815
Text: C1815 NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 ƔFEATURES . Power Dissipation PCM: 0.4 W Ta = 25 к . Collector Current 1 ICM: 0.15 A 2 . Collector-Base Voltage
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C1815
01-Jun-2002
C1815 transistors
transistors c1815
C1815
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors C1815LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.15 A Collector-base voltage
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OT-23
C1815LT1
OT-23
30MHz
C1815LT1
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A1015 sot-23
Abstract: A1015 A1015 BA transistor A1015 a1015 transistor C1815 br a1015 c1815 SOT-23 A1015 DATASHEET equivalent transistor A1015
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR
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OT-23
A1015
C1815
-10mA
30MHz
A1015 sot-23
A1015
A1015 BA
transistor A1015
a1015 transistor
C1815
br a1015
c1815 SOT-23
A1015 DATASHEET
equivalent transistor A1015
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR
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OT-23
A1015
C1815
-10mA
30MHz
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C1815 GR
Abstract: c1815 transistor transistor C1815 c1815 C1815 y C1815 NPN Transistor OF C1815 GR C1815 bl transistor C1815 y npn TRANSISTOR c1815
Text: C1815 Transistor NPN TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage
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C1815
100uA,
100mA,
30MHz
C1815 GR
c1815 transistor
transistor C1815
c1815
C1815 y
C1815 NPN Transistor
OF C1815 GR
C1815 bl
transistor C1815 y
npn TRANSISTOR c1815
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C1815 GR
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Value Units Collector-Base Voltage
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C1815
100mA,
30MHz
C1815 GR
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C1815 GR
Abstract: OF C1815 GR c1815 c1815 npn C1815 y C1815 TO92 C1815 equivalent ic c1815 transistor C1815 C1815 transistors
Text: C1815 NPN Plastic-Encapsulate Transistors P b Lead Pb -Free TO—92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage
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C1815
O--92
100mA,
30MHz
23-Nov-06
C1815 GR
OF C1815 GR
c1815
c1815 npn
C1815 y
C1815 TO92
C1815 equivalent
ic c1815
transistor C1815
C1815 transistors
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"device marking" HF
Abstract: C1815 C1815LT1
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors C1815LT1 SOT—23 TRANSISTOR( NPN ) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR 1.0 Power dissipation PCM : 0.2 W(Tamb=25℃) Collector current ICM: 0.15 A
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OT-23
C1815LT1
OT--23
C1815LT1
037TPY
950TPY
550REF
022REF
"device marking" HF
C1815
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PDF
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c1815 transistor
Abstract: c1815 gr
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Value Units Collector-Base Voltage
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C1815
100mA,
30MHz
c1815 transistor
c1815 gr
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C1815T
Abstract: No abstract text available
Text: C1815T 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G Power Dissipation H CLASSIFICATION OF hFE 1 J Product-Rank C1815T-O C1815T-Y C1815T-GR
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C1815T
C1815T-O
C1815T-Y
C1815T-GR
18-Mar-2010
100mA,
30MHz
C1815T
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PDF
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Untitled
Abstract: No abstract text available
Text: C1815T 400 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G Power Dissipation H J A Collector 2 D Millimeter Min. Max. 4.40 4.70 4.30 4.70
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C1815T
100mA,
31-Dec-2009
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage
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C1815
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C1815 GR
Abstract: c1815 transistor C1815 transistor C1815 c1815 gr h NPN C1815 transistor C1815 y transistors c1815 Transistor TO-92 C1815 OF C1815 GR
Text: Nnnnm T O -92 P iasti -E n c a p s u la te T ra n s is to rs C1815 TRANSISTOR NPN FEATURES Powe dissipation Pcm : 0.4 W (Tamb=25°C) Collecto cu ent : 0.15 A Collecto -base voltage Ic m V(BR)CBO • 60 V Ope ating and storage junction temperature range Tj. Tstg: -55 °C to+150°C
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OCR Scan
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C1815
C1815 GR
c1815 transistor
transistor C1815
c1815 gr h
NPN C1815
transistor C1815 y
transistors c1815
Transistor TO-92 C1815
OF C1815 GR
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PDF
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C1815 GR
Abstract: c1815 transistor C1815 GR 7 J transistor C1815 c1815 gr h c1815 transistor C1815 y C1815 gr 8 C1815 y OF C1815 GR
Text: TO-92 Plastic-Encapsulate Transistors C 1815 TR A N SISTO R N PN F E A T U RES . Pow er dissipation TO-92 Pcm; (Tamb=25°C) C o llecto r current 1.EMITTER Icm: 2.COLLECTOR aSS 3 .BASE T 0 .4 W 0.15A C ollecto r-b ase voltage 60 V V(BR)CBO: O perating and storage ju n ctio n tem perature range
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OCR Scan
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C1815
C1815 GR
c1815 transistor
C1815 GR 7 J
transistor C1815
c1815 gr h
transistor C1815 y
C1815 gr 8
C1815 y
OF C1815 GR
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