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    c1815 SOT-23

    Abstract: transistor c1815 data C1815 transistor c1815 sheet C1815 data 30MHZ C1815 NPN Transistor data transistor C1815 transistor c1815 c1815 hf
    Text: C1815 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.15 mA * Collector-base voltage V(BR)CBO : 60 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C


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    C1815 OT-23 OT-23 MIL-STD-202E c1815 SOT-23 transistor c1815 data C1815 transistor c1815 sheet C1815 data 30MHZ C1815 NPN Transistor data transistor C1815 transistor c1815 c1815 hf PDF

    C1815 NPN Transistor

    Abstract: C1815 TO92
    Text: TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.4 W (Tamb=25℃) 3. BASE Collector current 0.15 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


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    C1815 100mA, 30MHz C1815 NPN Transistor C1815 TO92 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TO—92 TRANSISTOR( NPN ) 1.EMITTER FEATURES 2.COLLECTOR Power dissipation PCM : 0.4 W(Tamb=25℃) Collector current ICM : 0.15 A Collector-base voltage V BR CBO : 60


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    C1815 30MHz 270TYP 050TYP PDF

    Untitled

    Abstract: No abstract text available
    Text: C1815LT1 C1815LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 0. 4 0. 95 TJ, Tstg: -55 2. 9 Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range to +150


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    C1815LT1 OT-23 30MHz C1815LT1 PDF

    C1815 GR

    Abstract: C1815 y transistor c1815 c1815 transistor OF C1815 GR C1815 transistor C1815 y C1815 bl C1815 equivalent C1815 GR IE
    Text: C1815 C1815 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.4 W (Tamb=25℃) 3. BASE Collector current ICM: 0.15 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


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    C1815 100mA, 30MHz C1815 GR C1815 y transistor c1815 c1815 transistor OF C1815 GR C1815 transistor C1815 y C1815 bl C1815 equivalent C1815 GR IE PDF

    c1815 gr h

    Abstract: C1815 GR transistor C1815 C1815 GR 7 J c1815 c1815 transistor C1815 GR 7 A C1815 y npn c1815 OF C1815 GR
    Text: C1815 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES Power dissipation o P CM :0.4 W (Tamb=25 C) Collector current I CM :0.15 A Collector-base voltage V (BR)CBO :60 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


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    C1815 c1815 gr h C1815 GR transistor C1815 C1815 GR 7 J c1815 c1815 transistor C1815 GR 7 A C1815 y npn c1815 OF C1815 GR PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors C1815LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range


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    OT-23 C1815LT1 OT-23 30MHz C1815LT1 PDF

    c1815

    Abstract: C1815LT1 C1815LT1 HF C1815L
    Text: C1815LT1 C1815LT1 TRANSISTOR NPN SOT-23 * “G” Lead(Pb)-Free 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 0. 4 0. 95 TJ, Tstg: -55 2. 9 Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range


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    C1815LT1 OT-23 60llector 30MHz C1815LT1 c1815 C1815LT1 HF C1815L PDF

    C1815L

    Abstract: AV1815LT1 C1815LT1 AV1815
    Text: @vic AV1815LT1 SOT-23 Plastic-Encapsulate Transistors AV1815LT1 SOT—23 TRANSISTOR( NPN ) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR 1.0 Power dissipation PCM : 0.2 W(Tamb=25℃) Collector current ICM: 0.15 A Collector-base voltage V BR CBO : 60


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    AV1815LT1 OT-23 OT--23 037TPY 950TPY 550REF 022REF C1815L AV1815LT1 C1815LT1 AV1815 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.4 W (Tamb=25℃) 3. BASE Collector current 0.15 A ICM: Collector-base voltage 60


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    C1815 100mA, 30MHz PDF

    C1815 transistors

    Abstract: transistors c1815 C1815
    Text: C1815 NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 ƔFEATURES . Power Dissipation PCM: 0.4 W Ta = 25 к . Collector Current 1 ICM: 0.15 A 2 . Collector-Base Voltage


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    C1815 01-Jun-2002 C1815 transistors transistors c1815 C1815 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors C1815LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.15 A Collector-base voltage


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    OT-23 C1815LT1 OT-23 30MHz C1815LT1 PDF

    A1015 sot-23

    Abstract: A1015 A1015 BA transistor A1015 a1015 transistor C1815 br a1015 c1815 SOT-23 A1015 DATASHEET equivalent transistor A1015
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR


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    OT-23 A1015 C1815 -10mA 30MHz A1015 sot-23 A1015 A1015 BA transistor A1015 a1015 transistor C1815 br a1015 c1815 SOT-23 A1015 DATASHEET equivalent transistor A1015 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR


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    OT-23 A1015 C1815 -10mA 30MHz PDF

    C1815 GR

    Abstract: c1815 transistor transistor C1815 c1815 C1815 y C1815 NPN Transistor OF C1815 GR C1815 bl transistor C1815 y npn TRANSISTOR c1815
    Text: C1815 Transistor NPN TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage


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    C1815 100uA, 100mA, 30MHz C1815 GR c1815 transistor transistor C1815 c1815 C1815 y C1815 NPN Transistor OF C1815 GR C1815 bl transistor C1815 y npn TRANSISTOR c1815 PDF

    C1815 GR

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Value Units Collector-Base Voltage


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    C1815 100mA, 30MHz C1815 GR PDF

    C1815 GR

    Abstract: OF C1815 GR c1815 c1815 npn C1815 y C1815 TO92 C1815 equivalent ic c1815 transistor C1815 C1815 transistors
    Text: C1815 NPN Plastic-Encapsulate Transistors P b Lead Pb -Free TO—92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage


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    C1815 O--92 100mA, 30MHz 23-Nov-06 C1815 GR OF C1815 GR c1815 c1815 npn C1815 y C1815 TO92 C1815 equivalent ic c1815 transistor C1815 C1815 transistors PDF

    "device marking" HF

    Abstract: C1815 C1815LT1
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors C1815LT1 SOT—23 TRANSISTOR( NPN ) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR 1.0 Power dissipation PCM : 0.2 W(Tamb=25℃) Collector current ICM: 0.15 A


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    OT-23 C1815LT1 OT--23 C1815LT1 037TPY 950TPY 550REF 022REF "device marking" HF C1815 PDF

    c1815 transistor

    Abstract: c1815 gr
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Value Units Collector-Base Voltage


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    C1815 100mA, 30MHz c1815 transistor c1815 gr PDF

    C1815T

    Abstract: No abstract text available
    Text: C1815T 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE  G Power Dissipation H CLASSIFICATION OF hFE 1 J Product-Rank C1815T-O C1815T-Y C1815T-GR


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    C1815T C1815T-O C1815T-Y C1815T-GR 18-Mar-2010 100mA, 30MHz C1815T PDF

    Untitled

    Abstract: No abstract text available
    Text: C1815T 400 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G Power Dissipation H J A Collector 2 D Millimeter Min. Max. 4.40 4.70 4.30 4.70


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    C1815T 100mA, 31-Dec-2009 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage


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    C1815 PDF

    C1815 GR

    Abstract: c1815 transistor C1815 transistor C1815 c1815 gr h NPN C1815 transistor C1815 y transistors c1815 Transistor TO-92 C1815 OF C1815 GR
    Text: Nnnnm T O -92 P iasti -E n c a p s u la te T ra n s is to rs C1815 TRANSISTOR NPN FEATURES Powe dissipation Pcm : 0.4 W (Tamb=25°C) Collecto cu ent : 0.15 A Collecto -base voltage Ic m V(BR)CBO • 60 V Ope ating and storage junction temperature range Tj. Tstg: -55 °C to+150°C


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    C1815 C1815 GR c1815 transistor transistor C1815 c1815 gr h NPN C1815 transistor C1815 y transistors c1815 Transistor TO-92 C1815 OF C1815 GR PDF

    C1815 GR

    Abstract: c1815 transistor C1815 GR 7 J transistor C1815 c1815 gr h c1815 transistor C1815 y C1815 gr 8 C1815 y OF C1815 GR
    Text: TO-92 Plastic-Encapsulate Transistors C 1815 TR A N SISTO R N PN F E A T U RES . Pow er dissipation TO-92 Pcm; (Tamb=25°C) C o llecto r current 1.EMITTER Icm: 2.COLLECTOR aSS 3 .BASE T 0 .4 W 0.15A C ollecto r-b ase voltage 60 V V(BR)CBO: O perating and storage ju n ctio n tem perature range


    OCR Scan
    C1815 C1815 GR c1815 transistor C1815 GR 7 J transistor C1815 c1815 gr h transistor C1815 y C1815 gr 8 C1815 y OF C1815 GR PDF