A1015 transistor
Abstract: transistor A1015 br a1015 Transistor TO-92 A1015 transistor A1015 GR A1015 A1015 PNP TRANSISTOR A1015 gr A1015 y pnp a1015
Text: TO-92 Plastic-Encapsulate Transistors PNP A1015 A1015 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM: 0.4 W (Tamb=25℃) Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range
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A1015
-100mA,
-10mA
30MHz
A1015 transistor
transistor A1015
br a1015
Transistor TO-92 A1015
transistor A1015 GR
A1015
A1015 PNP TRANSISTOR
A1015 gr
A1015 y
pnp a1015
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors A1015LT1 TRANSISTOR PNP SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.15 A ICM: Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range
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OT-23
A1015LT1
OT-23
-10mA
30MHz
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transistor A1015 GR
Abstract: br a1015 transistor A1015 a1015 transistor A1015 A1015 gr A1015 Y Transistor TO-92 A1015 A1015 equivalent A1015 PNP TRANSISTOR
Text: A1015 A1015 TRANSISTOR PNP TO-92 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM: 0.4 W (Tamb=25℃) Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃
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A1015
-100mA,
-10mA
30MHz
transistor A1015 GR
br a1015
transistor A1015
a1015 transistor
A1015
A1015 gr
A1015 Y
Transistor TO-92 A1015
A1015 equivalent
A1015 PNP TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: A1015LT1 A1015LT1 TRANSISTOR PNP SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 0. 4 0. 95 TJ, Tstg: -55 2. 9 Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range to +150
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A1015LT1
OT-23
-10mA
30MHz
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A1015
Abstract: A1015 equivalent transistor A1015 GR transistor A1015 A1015 y A1015 y equivalent a1015 transistor A1015 PNP TRANSISTOR pnp transistor a1015 A1015 GR
Text: A1015 TO-92 Plastic-Encapsulate Transistors Transistor PNP FEATURES Power dissipation o P CM :0.4 W (Tamb=25 C) Collector current I CM :-0.15 A Collector-base voltage V (BR)CBO :-50 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C
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A1015
A1015
A1015 equivalent
transistor A1015 GR
transistor A1015
A1015 y
A1015 y equivalent
a1015 transistor
A1015 PNP TRANSISTOR
pnp transistor a1015
A1015 GR
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A1015LT1
Abstract: A1015L
Text: A1015LT1 A1015LT1 TRANSISTOR PNP * “G” Lead(Pb)-Free SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 TJ, Tstg: -55 0. 95 0. 4 2. 9 Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range
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A1015LT1
OT-23
-10mA
30MHz
A1015LT1
A1015L
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors A1015LT1 TRANSISTOR PNP SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.15 A ICM: Collector-base voltage
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OT-23
A1015LT1
OT-23
-10mA
30MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR( PNP ) TO—92 1.EMITTER FEATURES 2.COLLECTOR Power dissipation PCM : 0.4 W(Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage
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A1015
30MHz
270TYP
050TYP
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transistor BA sot-23
Abstract: A1015LT1 pnp transistor A1 sot-23 SOT-23 marking BA A1015 ba marking sot-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors A1015LT1 SOT—23 ) TRANSISTOR( PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter Symbol 1.0 Power dissipation PCM :
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OT-23
A1015LT1
OT--23
-100A
30MHz
037TPY
950TPY
550REF
022REF
transistor BA sot-23
A1015LT1
pnp transistor A1 sot-23
SOT-23 marking BA
A1015
ba marking sot-23
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A1015 sot-23
Abstract: A1015 A1015 BA transistor A1015 a1015 transistor C1815 br a1015 c1815 SOT-23 A1015 DATASHEET equivalent transistor A1015
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR
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OT-23
A1015
C1815
-10mA
30MHz
A1015 sot-23
A1015
A1015 BA
transistor A1015
a1015 transistor
C1815
br a1015
c1815 SOT-23
A1015 DATASHEET
equivalent transistor A1015
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a1015 transistor
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO-92 1.EMITTER FEATURES z Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO
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A1015
-100mA,
-10mA
30MHz
a1015 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR
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OT-23
A1015
C1815
-10mA
30MHz
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a1015 transistor
Abstract: transistor A1015 GR transistor A1015 A1015 PNP TRANSISTOR a1015 A1015 gr Transistor TO-92 A1015 transistor pnp a1015 a1015 TRANSISTOR pnp br a1015
Text: A1015 Transistor PNP TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage
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A1015
-100A,
-100mA,
-10mA
30MHz
a1015 transistor
transistor A1015 GR
transistor A1015
A1015 PNP TRANSISTOR
a1015
A1015 gr
Transistor TO-92 A1015
transistor pnp a1015
a1015 TRANSISTOR pnp
br a1015
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A1015 gr
Abstract: transistor A1015 GR A1015 transistor A1015 a1015 transistor Transistor TO-92 A1015 A1015 y A1015 PNP TRANSISTOR A1015 TO92 equivalent transistor A1015
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO-92 1.EMITTER FEATURES z Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO 3.BASE Value Units
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A1015
-100mA,
-10mA
30MHz
A1015 gr
transistor A1015 GR
A1015
transistor A1015
a1015 transistor
Transistor TO-92 A1015
A1015 y
A1015 PNP TRANSISTOR
A1015 TO92
equivalent transistor A1015
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO Parameter Value Units
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A1015
-100mA,
-10mA
30MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO Parameter Value Units Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage
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Original
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A1015
-100mA,
-10mA
30MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) z Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA
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OT-23
A1015
-150mA
-150mA
C1815
-10mA
30MHz
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Untitled
Abstract: No abstract text available
Text: A1015 0.4 W, -150 mA, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 FEATURES 1.27 Typ. Power Dissipation 1: Emitter 2: Collector 3: Base 1.25±0.2 14.3±0.2
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A1015
-100mA,
-10mA
30MHz
01-June-2002
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A1015 gr
Abstract: A1015 y transistor A1015 A1015 A1015 TO92 A1015 equivalent br a1015 A1015 DATASHEET A1015 gr W A1015-pnp
Text: A1015 PNP General Purpose Transistors TO-92 P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* (TA=25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage
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A1015
30MHz
14-Feb-06
270TYP
A1015 gr
A1015 y
transistor A1015
A1015
A1015 TO92
A1015 equivalent
br a1015
A1015 DATASHEET
A1015 gr W
A1015-pnp
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A1015
Abstract: A1015GR A1015Y A1015-Y A1015-GR transistor a1015y A1015 gr A1015-GR H transistor A1015 A1015 equivalent
Text: A1015 -0.15A , -50V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H 1Emitter 2Collector 3Base J CLASSIFICATION OF hFE A Product-Rank
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A1015
A1015-O
A1015-Y
A1015-GR
04-Mar-2011
-100mA,
-10mA
30MHz
A1015
A1015GR
A1015Y
A1015-Y
A1015-GR
transistor a1015y
A1015 gr
A1015-GR H
transistor A1015
A1015 equivalent
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A1015 sot-23
Abstract: No abstract text available
Text: WILLAS FM120-M A1015 THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation offers TRANSISTOR• Batch
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OT-23
OD-123+
FM120-M
A1015
FM1200-M
OT-23
OD-123H
FM120-MH
FM130-MH
FM140-MH
A1015 sot-23
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A1015
Abstract: A1015 y A1015 PNP TRANSISTOR br a1015 pnp a1015
Text: M C C TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP FEATU R E S P cm; 0.4W (T a m b = 2 5 t) Icm: -0.15A /voltage V(BR)CBO: -5 0 V M S M M i a tofeltetoraga Junction temperature range Tj.Tstg: -55X2- to + 150°C ELECTRICAL CHARACTERISTICS (Tam b=25°C u n l e s s o t h e r w i s e
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OCR Scan
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A1015
-55X2-
A1015
A1015 y
A1015 PNP TRANSISTOR
br a1015
pnp a1015
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A1015
Abstract: A1015 gr A1015 Y transistor A1015 GR transistor a1015 br a1015 a1015 transistor A1015 PNP TRANSISTOR A1015 TO92
Text: Hcmam TO-92 Piasti A1015 Encapsulate Transistors TO-92 TRANSISTOR P N P FEATURES Power dissipation 1,EMITTER P CM • 0,4 Collecto cu ent W (Tamb=25’’C> 2.COLLECTOR lCM : -0.15 A Collecto -base voltage 3.BASE 1 2 3 • -50 V Ope ating and storage junction temperature range
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OCR Scan
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A1015
A1015 gr
A1015 Y
transistor A1015 GR
transistor a1015
br a1015
a1015 transistor
A1015 PNP TRANSISTOR
A1015 TO92
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1015LT1
Abstract: No abstract text available
Text: M C C SOT-23 P la stic-E n ca p s u la te T r a n s is to r s ^ ^ ^ A 1015LT1 TR A N SISTO R PNP 1 .BASE 2 .E M ITT E R 3 .C O LLE C T O R m FEATURES Power dissipation Pcm : 0.2 W (Tamb=25"C ) Collector current |CM: -0.15A Collector-base voltage V ( b r )Cb o : - 5 0 V
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OCR Scan
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OT-23
1015LT1
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