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    BR 9015 Search Results

    BR 9015 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AS9015-A Coilcraft Inc Telecom Transformer Visit Coilcraft Inc Buy
    SLR1190-151KEC Coilcraft Inc General Purpose Inductor, Visit Coilcraft Inc
    SER1590-152MLD Coilcraft Inc General Purpose Inductor, 1.5uH, 20%, 1 Element, Ferrite-Core, SMD, 6226, CHIP, 6226, ROHS COMPLIANT Visit Coilcraft Inc
    SER1390-153MLD Coilcraft Inc General Purpose Inductor, 15uH, 20%, Ferrite-Core, 5353, Visit Coilcraft Inc
    SER1390-153MLB Coilcraft Inc General Purpose Inductor, 15uH, 20%, Ferrite-Core, 5353, Visit Coilcraft Inc
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    BR 9015 Price and Stock

    Micro Commercial Components MBR90150PT-BP

    SCHOTTKY BARRIER RECTIFIER 150V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBR90150PT-BP Tube 1,800
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    • 10000 $2.0875
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    Infineon Technologies AG TLE9015DQUTRXBRGTOBO1

    Power Management IC Development Tools TLE9015DQU_TRX_BRG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TLE9015DQUTRXBRGTOBO1 7
    • 1 $96.7
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    Infineon Technologies AG TLE9015QUTRXBRGTOBO1

    Power Management IC Development Tools
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TLE9015QUTRXBRGTOBO1 4
    • 1 $154.53
    • 10 $154.53
    • 100 $154.53
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    BR 9015 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC1913

    Abstract: 2SA913
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA913 DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -150V(Min) ·Complement to Type 2SC1913 APPLICATIONS ·Designed for AF high power dirver applications. n


    Original     		2SA913 -150V 2SC1913 -500mA; -50mA -150mA; -100V 2SC1913 2SA913 PDF

    Audio Output Transistor Amplifier

    Abstract: 2SA900 2SC1568
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA900 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 APPLICATIONS


    Original     		2SA900 2SC1568 -50mA -50mA; Audio Output Transistor Amplifier 2SA900 2SC1568 PDF

    2SA900

    Abstract: 2SC1568
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA900 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 APPLICATIONS


    Original     		2SA900 2SC1568 -50mA -50mA; 2SA900 2SC1568 PDF

    2SC1565

    Abstract: 2SA795
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA795 DESCRIPTION •Large Collector Power Dissipation ·High Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1565 APPLICATIONS


    Original     		2SA795 -150V 2SC1565 -300mA; -30mA -100V; -150mA -500mA 2SC1565 2SA795 PDF

    2SC1565

    Abstract: 2Sc1565 transistor 2SA795 2SC156
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA795 DESCRIPTION •Large Collector Power Dissipation ·High Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1565 APPLICATIONS


    Original     		2SA795 -150V 2SC1565 -300mA; -30mA -100V; -150mA -500mA 2SC1565 2Sc1565 transistor 2SA795 2SC156 PDF

    transistor 10mhz 60w

    Abstract: 2SA1535 2SA1535A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1535/A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A ·Good Linearity of hFE ·Complement to Type 2SC3944/A APPLICATIONS


    Original     		2SA1535/A -150V -2SA1535 -180V -2SA1535A 2SC3944/A 2SA1535 2SA1535A transistor 10mhz 60w 2SA1535 2SA1535A PDF

    2SA1535A

    Abstract: 2SA1535
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1535/A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A ·Good Linearity of hFE ·Complement to Type 2SC3944/A APPLICATIONS


    Original     		2SA1535/A -150V -2SA1535 -180V -2SA1535A 2SC3944/A 2SA1535 2SA1535A 2SA1535A 2SA1535 PDF

    2SA1110

    Abstract: 2SC2590
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1110 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -120V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2590 APPLICATIONS ·Designed for audio frequency power amplifier applications.


    Original     		2SA1110 -120V 2SC2590 -300mA; -30mA -150mA; -500mA; 2SA1110 2SC2590 PDF

    2SA1112

    Abstract: 2sc2592
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1112 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -180V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2592 APPLICATIONS ·Designed for audio frequency drivers and high power


    Original     		2SA1112 -180V 2SC2592 -500mA; -50mA -150mA; 2SA1112 2sc2592 PDF

    2SA1111

    Abstract: 2SC2591
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1111 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -150V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2591 APPLICATIONS ·Designed for audio frequency drivers and high power


    Original     		2SA1111 -150V 2SC2591 -500mA; -50mA -150mA; 2SA1111 2SC2591 PDF

    Untitled

    Abstract: No abstract text available
    Text: Jei5.su , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1112 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown VoltageV(BR)CEo=-180V(Min) • Good Linearity of MFE


    Original     		2SA1112 -180V 2SC2592 O-220C -100u -500mA; -50mA -50rnA PDF

    Untitled

    Abstract: No abstract text available
    Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1111 DESCRIPTION • Collector-Emitter Breakdown VoltageV(BR)CEo=-150V(Min) • Good Linearity of hFE • Complement to Type 2SC2591


    Original     		2SA1111 -150V 2SC2591 O-220C -100u -500mA; -50mA PDF

    2SC2482

    Abstract: v 90150 transistor 2sc2482
    Text: 2SC2482 2SC2482 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: 0.1 A Collector-base voltage 300 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃


    Original     		2SC2482 O-92MOD 30MHz 2SC2482 v 90150 transistor 2sc2482 PDF

    Untitled

    Abstract: No abstract text available
    Text: , U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA900 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO=-18V(Min) • Good Linearity of I>E • Low Collector Saturation Voltage


    Original     		2SA900 2SC1568 O-126 -50mA -50mA; PDF

    br 9015

    Abstract: pnp transistor 9015 transistor 9015 c 9015 pnp BR 9014 transistor c 9015 9015 transistor C 9015 transistor transistor 9015 BR 9015 C
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be


    Original     		100mA, br 9015 pnp transistor 9015 transistor 9015 c 9015 pnp BR 9014 transistor c 9015 9015 transistor C 9015 transistor transistor 9015 BR 9015 C PDF

    BR 9015

    Abstract: transistor 9015 c transistor c 9015 BR 9015 C pnp transistor 9015 transistors BR 9015 9015 pnp transistor 9015 9015* Transistor C 9015 transistor
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be


    Original     		100mA, BR 9015 transistor 9015 c transistor c 9015 BR 9015 C pnp transistor 9015 transistors BR 9015 9015 pnp transistor 9015 9015* Transistor C 9015 transistor PDF

    BR 9014

    Abstract: BR 9014 transistor BR 9015 BR 9014 c transistors BR 9015 transistor 9014 NPN 9015 PNP transistor 9015 c transistor c 9015 TS 9015
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be


    Original     		100mA, BR 9014 BR 9014 transistor BR 9015 BR 9014 c transistors BR 9015 transistor 9014 NPN 9015 PNP transistor 9015 c transistor c 9015 TS 9015 PDF

    transistor c 9015

    Abstract: BR 9014 BR 9015 BR 9014 transistor transistor 9015 c 9015 PNP pnp transistor 9015 BR 9014 C TRANSISTOR transistors BR 9015 9015 TO-92
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be


    Original     		100mA, transistor c 9015 BR 9014 BR 9015 BR 9014 transistor transistor 9015 c 9015 PNP pnp transistor 9015 BR 9014 C TRANSISTOR transistors BR 9015 9015 TO-92 PDF

    BR 9014

    Abstract: BR 9014 transistor 9014 C 9014 transistor transistor 9014 npn TRANSISTOR c 9014 ST 9014 C BR 9014 c V. 9014 c transistor 9014 C npn
    Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be


    Original     		PDF

    BR 9014

    Abstract: BR 9014 transistor BR 9014 C ST 9014 C C 9014 transistor st 9014 TRANSISTOR c 9014 TRANSISTOR 9014 V. 9014 c 9014
    Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be


    Original     		PDF

    BR 9014

    Abstract: BR 9014 transistor ST 9014 C BR 9014 c C 9014 transistor BR 9014 C TRANSISTOR V. 9014 c transistor 9014 C npn 9014 TRANSISTOR c 9014
    Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be


    Original     		PDF

    8909K500

    Abstract: 2-1520230-2 AL 250V
    Text: 8 — 7 TVIIS BRÀWINÔ IS UNPUBLISHED- COPYRIGHT - RELEASED FOR PUBLICATION ns/ TV/rtA n OAODADATlrtfcl BY TYCO ELECTRONICS CORPORATION. - LOC . ALL RIGHTS RESERVED. AD DIST 00 REVISIONS LTR B DESCRIPTION DWN DATE WL HM


    OCR Scan     		EC0G3G-0178-02 27JUN02 8909K5 01AUG90 02AUG90 8909K27 8910K202 8910K165 8909K4 8909K500 2-1520230-2 AL 250V PDF

    7402k4

    Abstract: ECO-11-004587 7402K3 8909K5 8909K500
    Text: 7 8 •mis BRÀWINÔ IS UNPUBLISHED COPYRIGHT RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. - AD DIST 00 REVISIONS LTR B1 DESCRIPTION DWN DATE APVD 21MAR11 RK HMR REVISED PER ECO -11-004587 D D 858 I I 781 B B 632 1,188 O MADE IN U.S.A. o 1,281 o Y ARAB


    OCR Scan     		ECO-11-004587 21MAR11 8909K5 01aug90 02aug90 8909K27 8910K202 8910K165 8909K4 7403K2 7402k4 ECO-11-004587 7402K3 8909K5 8909K500 PDF

    transistor 2sc2482

    Abstract: No abstract text available
    Text: MCC TO-92MOD Plastic-Encapsulate T ran sisto rs^ ^ ^ 2SC2482 TRANSISTOR NPN FEATURES P cm: 0.9 W (Tam b=25°C) IcM: 0.1 A M atage W ÈÉÈÉÈÊ é a m V(BR)CBO: . 300 v W j W Ü t t j g i ^ sto rag e Junction tem perature range Tj.Tstg: -55t: to + 150°C


    OCR Scan     		O-92MOD 2SC2482 lc--20 30MHz transistor 2sc2482 PDF