BR 9013 Search Results

Transistor 9013

Abstract: Transistor-9013 h transistor BR 9013 BR 9013 datasheet transistor 9013
Contextual Info: NPN SILICON TRANSISTOR 9013 TO 92 FEATURES 特 1.EMITTER 征 发 射 极 Power dissipation 最大耗散功率 PCM : 0.625 W Collector current ICM : 基 极 Tamb=25 3.COLLECTOR 最大集电极电流 0.5 电 极 1 2 3 集电极-基极击穿电压 V BR CBO : 45

X33B

Contextual Info: VERSION FULLY LOADED No. OF CKTS 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58 60 62 64 66 68 - H o/io/.ooTR - |-0~|Q .1Q /-QQ ^1 RECOMMENDED P.C. BOARD HOLE PATTERN /|-b_Frome_A2_P_ME_T Rev. E 2006/04/15 NOTES .MATERIAL:- PIN:- 0.635 /.Q25 5Q. BR A 55 WIRE.

transistor BR 9013

Abstract: BR 9013 transistor 9012 data sheet NPN 9013 9013 transistor 9013 npn transistor datasheet transistor 9013 data sheet transistor 9012 transistor c 9013 9013 npn
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

CHN 650

Abstract: CHN 749 Varo Semiconductor avalanche Varo vh247 chn 610 chn 850 chn 521 varo diode varo semiconductor VH247
Contextual Info: vjr VARO SEMICONDUCTOR, INC., P.O. Box 469013 1000 N. Shiloh; Garland, Texas 75046-9013 214 271-8511 TW X 910-860-5178 VARO 6 Amp Epoxy Bridge Rectifiers vh Series Janua/y 1964 Glass Passivated Silicon Chips Controlled Avalanche Series with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings

IC2100

Abstract: npn 13q marking 13Q SOT-23
Contextual Info: WILLAS FM120-M+ 9013xLT1 THRU FM1200-M+ General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline NPN Silicon Features • Batch process design, excellent power dissipation offers

Varo R711

Abstract: R712 varo diode Varo R712X varo semiconductor R704 R716 R711 R711X R712X
Contextual Info: vy VARO SEMICONDUCTOR, INC., P.O. Box 469013 1000 N. Shiloh; Garland, Texas 75046-9013 214 271 -8511 TW X 910-860-5178 VARO 30 Amp Center Tapped Silicon Integrated Rectifiers Controlled Avalanche Types with250V, 450V, and 650V Minimum Avalanche Ratings Non-Controlled Avalanche Types with

IRF5305

Abstract: EPF12 borg
Contextual Info: PD - 901385B IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier

transistor BR 9013

Abstract: transistor c 9013 transistor 9013 NPN 9013 s 9013 h PNP 9013 9013 transistor BR 9012 c 9013 g 9013 npn transistor
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

transistor BR 9013

Abstract: transistor c 9013 transistor 9013 9013 transistor BR 9013 9013 pnp NPN 9013 9013 NPN Transistor Transistor-9013 h 9013 NPN Output Transistor
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

transistor c 9013

Abstract: transistor BR 9013 NPN 9013 9013 transistor transistor 9013 BR 9013 9013 npn transistor 9013 pnp pin configuration NPN transistor 9013 npn 9013
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

NPN 9013

Abstract: transistor BR 9013 pin configuration NPN transistor 9013 npn 9013 npn transistor 9013 transistor pin configuration NPN transistor 9012 PNP 9013 NPN transistor c 9013 9013 pnp data sheet NPN 9013
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

transistor BR 9013

Abstract: NPN 9013 transistor c 9013 9013 npn transistor br 9013 transistor 9012 9013 9013 transistor Transistor 9013 9013 pnp transistor npn c 9013
Contextual Info: HN 9013 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, G and H, according to its DC current gain. As complementary type

Transistor-9013 h

Abstract: Transistor 9013 transistor BR 9013 9012 pnp data sheet transistor 9012 transistor c 9012 PNP 9012 data sheet NPN 9013 Transistor 9012 G 9013 transistor
Contextual Info: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

TRIAC bt139 heater temperature control

Abstract: TRIAC TAG 91 philips thermistor 2322 642 TRIAC TAG 137 tda1023 applications UPR resistor "2222 016" triac burst control ic TRIAC TAG philips triac
Contextual Info: Philips Sem iconductors Product specification Proportional-control triac triggering circuit FEATURES • Adjustable width of proportional range • Adjustable hysteresis • Adjustable width of trigger pulse • Adjustable repetition timing of firing burst

TDA1023

Abstract: TRIAC bt139 heater temperature control tda1023 applications TRIAC heater temperature control philips thermistor 2322 642 Triac stabilizer application note triac firing pulse generating circuit controlling heater with triac proportional controlling heater with triac triac triggering ic
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA1023/T Proportional-control triac triggering circuit Product specification Supersedes data of August 1982 File under Integrated Circuits, IC02 May 1991 Philips Semiconductors Product specification Proportional-control triac triggering circuit

capacitor 10MF

Contextual Info: NCP1522BUGEVB NCP1522B Adjustable Output Voltage Step-Down Converter Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL Overview which reduces component size by allowing smaller inductors and capacitors. Automatic switching PWM/PFM

tsop-5

Abstract: TLS-P-004-A-1106-BR C1608X5R1A475 A108B A114 A115 JESD22 JESD78 NCP1521 NCP1521B
Contextual Info: NCP1521BEVB NCP1521B Adjustable Output Voltage Step−Down Converter Demonstration Board http://onsemi.com Prepared by: Bertrand Renaud On Semiconductor DEMONSTRATION NOTE Overview The NCP1521B step−down PWM DC−DC converter is optimized for portable applications powered from one cell

Contextual Info: PD - 93926C SMPS MOSFET IRFB18N50K HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l VDSS RDS(on) typ. ID 0.26Ω 17A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement

Contextual Info: PD - 94084B IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. ID 0.28Ω 16A 500V Features and Benefits

Contextual Info: PD - 94578A IRFB17N60K SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.35Ω 17A 600V Benefits Smaller TO-220 Package

irfb17n50l

Contextual Info: PD - 94084B IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. ID 0.28Ω 16A 500V Features and Benefits

Contextual Info: PD - 94418A SMPS MOSFET IRFB20N50K HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l VDSS RDS(on) typ. ID 500V 0.21Ω 20A Benefits l Low Gate Charge Qg results in Simple Drive Requirement

2SC3332

Abstract: 2SA1319 N133 1334B N1334C
Contextual Info: 注文コード No.N 1 3 3 4 C 2SA1319 / 2SC3332 No. N1334C N0899 ※半導体ニューズ No.1334B とさしかえてください。 2SA1319 / 2SC3332 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高電圧スイッチング用

IRFB17N60K

Contextual Info: PD - 94578A IRFB17N60K SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.35Ω 17A 600V Benefits Smaller TO-220 Package