BR 6500 Search Results

BR 6500 Result Highlights (5)

Part	Manufacturer	Description
165-00SL	Coilcraft Inc	General Purpose Inductor, 0.009uH, Air-Core, 2323
165-00L	Coilcraft Inc	General Purpose Inductor, 0.009uH, Air-Core, 2020
165-00A06SL	Coilcraft Inc	Variable Inductor, 0.009uH Min, 0.009uH Max, Aluminum-Core, Shielded, 2323, ROHS COMPLIANT
165-00A06L	Coilcraft Inc	Variable Inductor, 0.009uH Min, 0.009uH Max, Aluminum-Core, Unshielded, 2020, ROHS COMPLIANT
74ALVCH16500PV	Renesas Electronics Corporation	18BIT UNIVERSAL BUS TRANS

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Vishay Intertechnologies RS02BR6500FB12 RS-2B .65 1% B12 - Bulk (Alt: RS02BR6500FB12)
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Avnet Americas	RS02BR6500FB12	Bulk		10 Weeks	100	1 - 10 - 100 $1.8178 1000 $1.8178 10000 $1.8178	Buy Now
Vishay Intertechnologies RS02BR6500FE12 RS-2B .65 1% E12 e3 - Bulk (Alt: RS02BR6500FE12)
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Avnet Americas	RS02BR6500FE12	Bulk		10 Weeks	100	1 - 10 - 100 $1.9497 1000 $1.9497 10000 $1.9497	Buy Now
Mouser Electronics	RS02BR6500FE12					1 $3.05 10 $2.72 100 $2.01 1000 $1.39 10000 $1.36	Get Quote
Alpha Wire 461816 BR002 Hook-up Wire 461816 BROWN 500 FT
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Mouser Electronics	461816 BR002		1			1 $102.19 10 $86.55 100 $75.91 1000 $75.91 10000 $75.91	Buy Now
Alpha Wire 461626 BR002 Hook-up Wire HU WIRE PVC
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Mouser Electronics	461626 BR002		1			1 $154.78 10 $128.78 100 $112.98 1000 $112.98 10000 $112.98	Buy Now
Alpha Wire 9316 BR002 Coaxial Cables 25 AWG 7/.0067 1 Conductor 900V Braid, PTFE, FEP 500 ft Spool, Brown
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Mouser Electronics	9316 BR002		1			1 $1284.75 10 $1211.3 100 $1211.3 1000 $1211.3 10000 $1211.3	Buy Now

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BR 6500 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ISO 8015 Abstract: HYS72D128300HBR-5-C PC2700R-25331 TFBGA 117-pin 6n25 cmos 4070 PC2700R-25331-F0 HYS72D64301HBR-5-C DDR400 HYS72D64301HBR Text: August 2007 HYS72D 64301H B R– [ 5 / 6 ] – C HYS72D 128300 H BR– [ 5 / 6 ] – C HYS72D 128321 H BR– [ 5 / 6 ] – C HYS72D256x20HBR–[5/6]–C 1 8 4 - P i n R e g i s t e r e d D o u b l e - D a t a - R a t e SD R A M M o d u l e RDIMM DDR SDRAM	Original	PDF	HYS72D 64301H HYS72D256x20HBR HYS72D64301HBR HYS72D128300HBR HYS72D128321HBR ISO 8015 HYS72D128300HBR-5-C PC2700R-25331 TFBGA 117-pin 6n25 cmos 4070 PC2700R-25331-F0 HYS72D64301HBR-5-C DDR400 HYS72D64301HBR
2SB1587 Abstract: No abstract text available Text: ^Ss.mi-dondu.cto^ ., U na. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1587 Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-150V(Min)	Original	PDF	2SB1587 -150V 2SD2438 2SB1587
2SD2558 Abstract: 2sd25 Text: Equivalent circuit 2SD2558 Silicon NPN Triple Diffused Planar Transistor ICBO VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 Unit VCE(sat) IC=1A, IB=5mA 1.5max V W fT VCE=10V, IE=–0.5A	Original	PDF	2SD2558 FM100 100max 200min 15typ 110typ 2SD2558 2sd25
2SD2558 Abstract: No abstract text available Text: Equivalent circuit 2SD2558 Silicon NPN Triple Diffused Planar Transistor ICBO VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 Unit VCE(sat) IC=1A, IB=5mA 1.5max V W fT VCE=10V, IE=–0.5A	Original	PDF	2SD2558 FM100 100max 200min 15typ 110typ 2SD2558
2SB1647 Abstract: No abstract text available Text: !j£Ti£ty ^s-rni-dondudtoi ^Pioducti, <_/ \^f 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1647 Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-150V(Min)	Original	PDF	2SB1647 -150V -10mA) 2SD2560 -10mA -10mA, 2SB1647
2SD2557 Abstract: No abstract text available Text: Equivalent circuit 2SD2557 Silicon NPN Triple Diffused Planar Transistor Unit VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 V a 4.8±0.2 2.0±0.1 ø3.2±0.1 b IB 2 A VCE(sat) IC=1A, IB=5mA	Original	PDF	2SD2557 MT-100 100max 200min 2SD2557
2SD2557 Abstract: TEA1 Text: Equivalent circuit 2SD2557 Silicon NPN Triple Diffused Planar Transistor Unit VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 V a 4.8±0.2 2.0±0.1 ø3.2±0.1 b IB 2 A VCE(sat) IC=1A, IB=5mA	Original	PDF	2SD2557 MT-100 100max 200min 2SD2557 TEA1
2SD2401 Abstract: 2SB1570 Text: C Equivalent circuit 2SD2401 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1570 •Electrical Characteristics Unit VCBO 160 V ICBO VCB=160V 100max µA VCEO 150 V IEBO VEB=5V 100max µA V Ratings Unit VEBO 5 V V(BR)CEO IC=30mA 150min	Original	PDF	2SD2401 2SB1570) MT-200 100max 150min 5000min 2SD2401 2SB1570
REGULATOR IC FOR 150V Abstract: 12v 10a regulator ic 2SD2560 2SB1647 12v 10A regulator 12V 10A voltage regulators darlington power transistor 10a Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·High DC Current Gain: hFE= 5000( Min.) @(IC= -10A, VCE= -4V) ·Low Collector Saturation Voltage: VCE(sat)= -2.5V(Max)@ (IC= -10A, IB= -10mA)	Original	PDF	-150V -10mA) 2SD2560 -10mA -150V -10mA, REGULATOR IC FOR 150V 12v 10a regulator ic 2SD2560 2SB1647 12v 10A regulator 12V 10A voltage regulators darlington power transistor 10a
zener diode 182 Abstract: 1N5921B 1N5922B 1N5923B 1N5924B 1N5925B 1N5926B 1N5956B DO-204AL Text: 1N5921B thru 1N5956B Crownpo Technology 1.5 Watt Silicon Zener Diodes V BR 6.8 to 200 V Peak Pulse Power 1.5 W DO-204AL (DO-41) Features • Plastic package has underwriters laboratory flammability classification 94v-0 • Low zener impedance • Excellent clamping capability	Original	PDF	1N5921B 1N5956B DO-204AL DO-41) 94v-0 DO-204AL MIL-STD-202, 01-Apr-04 zener diode 182 1N5922B 1N5923B 1N5924B 1N5925B 1N5926B 1N5956B
GT21 Abstract: No abstract text available Text: SUM60N08-07T New Product Vishay Siliconix N-Channel 75-V D-S MOSFET with Sensing Diode FEATURES D TrenchFETr Power MOSFET Plus Temperature Sensing Diode D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V	Original	PDF	SUM60N08-07T 08-Apr-05 GT21
2SB1587 Abstract: 2SD2438 DSA0016506 Text: 7 0 Ω E 2SB1587 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2438) Unit Conditions Ratings Unit –160 V ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA VEBO –5 V V(BR)CEO IC=–30mA –150min V IC –8 A	Original	PDF	2SB1587 2SD2438) FM100 100max 150min 5000min 65typ 160typ 2SB1587 2SD2438 DSA0016506
2SB1560 Abstract: 2SD2390 DSA0016506 Text: 7 0 Ω E 2SB1560 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) Ratings Unit ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V V V(BR)CEO IC=–30mA –150min –10 A hFE VCE=–4V, IC=–7A 5000min∗ IB	Original	PDF	2SB1560 2SD2390) MT-100 100max 150min 5000min 50typ 2SB1560 2SD2390 DSA0016506
2SB1560 Abstract: 2SD2390 equivalent 2SD2390 Silicon Pnp Epitaxial Planar Transistor 2sb15 Sanken Electric 2SB1560 Text: 7 0 Ω E 2SB1560 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) 2SB1560 Unit ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V V V(BR)CEO IC=–30mA –150min –10 A hFE VCE=–4V, IC=–7A 5000min∗ IB	Original	PDF	2SB1560 2SD2390) MT-100 100max 150min 5000min 50typ 2SB1560 2SD2390 equivalent 2SD2390 Silicon Pnp Epitaxial Planar Transistor 2sb15 Sanken Electric 2SB1560

2SB1588 Abstract: 2SD2439 DSA0016506 Text: 7 0 Ω E 2SB1588 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2439) Ratings Unit VCBO –160 V ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V Ratings Unit 15.6±0.2 –5 V V(BR)CEO IC=–30mA –150min IC	Original	PDF	2SB1588 2SD2439) FM100 100max 150min 5000min 50typ 230typ 2SB1588 2SD2439 DSA0016506
Untitled Abstract: No abstract text available Text: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.007 at VGS = 10 V 60a • TrenchFET Power MOSFET Plus Current Sense • Low Thermal Resistance Package Available	Original	PDF	SUM60N08-07C SUM60N08-07C SUM60N08-07C-E3 11-Mar-11
2SB1587 Abstract: 2SD2438 transistor 2SB1587 Text: 7 0 Ω E 2SB1587 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2438) Unit Conditions 2SB1587 Unit –160 V ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA VEBO –5 V V(BR)CEO IC=–30mA –150min V IC –8 A	Original	PDF	2SB1587 2SD2438) FM100 100max 150min 5000min 65typ 160typ 2SB1587 2SD2438 transistor 2SB1587
Untitled Abstract: No abstract text available Text: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES D TrenchFETr Power MOSFET Plus Current Sense D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V 60a APPLICATIONS	Original	PDF	SUM60N08-07C 08-Apr-05
Untitled Abstract: No abstract text available Text: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES D TrenchFETr Power MOSFET Plus Current Sense D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V 60a APPLICATIONS	Original	PDF	SUM60N08-07C 08-Apr-05
SUM60N08-07C Abstract: No abstract text available Text: SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.007 at VGS = 10 V 60a • TrenchFET Power MOSFET Plus Current Sense • Low Thermal Resistance Package Available	Original	PDF	SUM60N08-07C SUM60N08-07C-E3 18-Jul-08 SUM60N08-07C
S-2017 Abstract: SUM60N08-07T D2T21 Text: SUM60N08-07T New Product Vishay Siliconix N-Channel 75-V D-S MOSFET with Sensing Diode FEATURES D TrenchFETr Power MOSFET Plus Temperature Sensing Diode D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V	Original	PDF	SUM60N08-07T S-20174--Rev. 18-Mar-02 S-2017 SUM60N08-07T D2T21
2SB1588 Abstract: 2SD2439 Text: 7 0 Ω E 2SB1588 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2439) 2SB1588 Unit VCBO –160 V ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V 2SB1588 Unit 15.6±0.2 –5 V V(BR)CEO IC=–30mA –150min IC	Original	PDF	2SB1588 2SD2439) FM100 100max 150min 5000min 50typ 2SB1588 2SD2439
2SD2438 Abstract: 2SB1587 transistor ,12v ,Ic 1A ,NPN Text: Equivalent circuit 2SD2438 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1587 Application : Audio, Series Regulator and General Purpose ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A	Original	PDF	2SD2438 2SB1587) FM100 100max 150min 5000min 80typ 85typ 2SD2438 2SB1587 transistor ,12v ,Ic 1A ,NPN
D0-218AA Abstract: No abstract text available Text: SURFADE MOUNT AUTOMOTIVE TRANSIENT SUPPRESSORS CASE TYPE: D0-218AA % BREAKDOWN VOLTAGE V BR MAX. PEAK IMPULSE CURRENT DEVICE TYPE VOLTS MIN at It mA ncvcnoc STAND-OFF VOLTAGE (Vwm) VOLTS SM5A27 24 10 22.0 0.20 50.0 40.0 SM6A27 24 10 22.0 0.50 60.0 40,0 SM8A27	OCR Scan	PDF	D0-218AA SM5A27 SM6A27 SM8A27 6KA24 10/1000ns D0-218AA

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BR 6500 Search Results

BR 6500 Result Highlights (5)

BR 6500 Price and Stock

Vishay Intertechnologies RS02BR6500FB12

Vishay Intertechnologies RS02BR6500FE12

Alpha Wire 461816 BR002

Alpha Wire 461626 BR002

Alpha Wire 9316 BR002

BR 6500 Datasheets Context Search

ISO 8015

2SB1587

2SD2558

2SD2558

2SB1647

2SD2557

2SD2557

2SD2401

REGULATOR IC FOR 150V

zener diode 182

GT21

2SB1587

2SB1560

2SB1560

2SB1588

Untitled

2SB1587

Untitled

Untitled

SUM60N08-07C

S-2017

2SB1588

2SD2438

D0-218AA