Untitled
Abstract: No abstract text available
Text: SMDCHGR0805SQ/1008SQ SERIES MINIATURE SMD CHIP INDUCTORS Applications : ．For high-frequency applications including mobile Phones, portable phones, such as PA, ANT, VCD SAW,etc. ．Mobile phones such as GSM, CDMA, PDC, etc. ．Bluetooth, W-LAN. Shape and Dimensions Dimensions are in mm :
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SMDCHGR0805SQ/1008SQ
0805SQ
1008SQ
SMDCHGR1008SQ-4N1
SMDCHGR1008SQ-10N
SMDCHGR1008SQ-12N
SMDCHGR1008SQ-18N
SMDCHGR1008SQ-22N
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SMDCHGR0805
Abstract: No abstract text available
Text: SMDCHGR0805SQ/1008SQ SERIES MINIATURE SMD CHIP INDUCTORS Applications : 炽For high-frequency applications including mobile Phones, portable phones, such as PA, ANT, VCD SAW,etc. 炽Mobile phones such as GSM, CDMA, PDC, etc. RF Coil Type 炽Bluetooth, W-LAN.
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SMDCHGR0805SQ/1008SQ
0805SQ
1008SQ
SMDCHGR0805
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KRF7750
Abstract: HEXFET Power MOSFET P-Channel 4,7 16v smd MOSFET TSSOP-8 smd transistor 26
Text: IC IC SMD Type HEXFET Power MOSFET KRF7750 TSSOP-8 Unit: mm Features Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter
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KRF7750
-100A/
KRF7750
HEXFET Power MOSFET P-Channel
4,7 16v smd
MOSFET TSSOP-8
smd transistor 26
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smd diode 78a
Abstract: KRF7325
Text: IC IC SMD Type HEXFET Power MOSFET KRF7325 Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile <1.8mm Available in Tape & Reel 1: Source 1 3: Source 2 2: Gate 1 4: Gate 2 7,8: Drain 1 5,6: Drain 2 Absolute Maximum Ratings Ta = 25
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KRF7325
-100A/
smd diode 78a
KRF7325
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smd marking BG
Abstract: 2SB1124 br 39 SMD Bg marking
Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1124 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Absolute Maximum Ratings Ta = 25 Parameter
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2SB1124
-100mA
smd marking BG
2SB1124
br 39 SMD
Bg marking
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type High-Current Switching Applications 2SB1202 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1
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2SB1202
O-252
-100mA
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smd diode br
Abstract: diode 66a KRF7501
Text: IC IC SMD Type HEXFET Power MOSFET KRF7501 Features Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol
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KRF7501
smd diode br
diode 66a
KRF7501
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smd diode 74a
Abstract: BR 26 diode smd 8a 046 KRF7313 58A1 78 DIODE SMD smd transistor 26 smd diode fr
Text: IC IC SMD Type HEXFET Power MOSFET KRF7313 Features Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Symbol Rating Drain- Source Voltage Parameter VDS 30 Gate-to-Source Voltage
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KRF7313
smd diode 74a
BR 26 diode
smd 8a 046
KRF7313
58A1
78 DIODE SMD
smd transistor 26
smd diode fr
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SMD SINGLE GATE
Abstract: KRF7606
Text: IC IC SMD Type HEXFET Power MOSFET KRF7606 Features Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
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KRF7606
-100A/
SMD SINGLE GATE
KRF7606
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ld smd transistor
Abstract: KRF7401
Text: IC IC SMD Type HEXFET Power MOSFET KRF7401 Features Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating 10 Sec. Pulsed Drain Current, VGS @ 4.5V,Ta = 25
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KRF7401
ld smd transistor
KRF7401
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3N0609
Abstract: IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 diode marking code 77 3N060 3n06
Text: IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 8.8 mΩ ID 77 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1
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IPB77N06S3-09
IPI77N06S3-09,
IPP77N06S3-09
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
3N0609
IPI77N06S3-09
3N0609
IPB77N06S3-09
IPI77N06S3-09
IPP77N06S3-09
PG-TO263-3-2
diode marking code 77
3N060
3n06
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smd diode 74a
Abstract: 78 DIODE SMD KRF7319 P-channel Dual MOSFET VGS -25V
Text: IC IC SMD Type HEXFET Power MOSFET KRF7319 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit V VDS 30 -30 Continuous Drain Current *5 Ta = 25
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KRF7319
-100A/
smd diode 74a
78 DIODE SMD
KRF7319
P-channel Dual MOSFET VGS -25V
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DFN DFQ
Abstract: marking PGW PFX 1000 ddk MARKING CODE marking PDX SMDJ70 SMDJ30 MARKING CODE PGV
Text: SMDJ5.0 thru SMDJ170CA ® . . . . . Engineered solutions for the transient environment HIGH CURRENT DISCRETE TVS 3,000 WATTS APPLICATIONS ● ● ● ● General Power Bus Protection UPS Power Switches DC Board Level Protection Industrial & Commercial Power Circuits
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SMDJ170CA
DO-214AB
DFN DFQ
marking PGW
PFX 1000
ddk MARKING CODE
marking PDX
SMDJ70
SMDJ30
MARKING CODE PGV
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smd diode 74a
Abstract: smd 1a 24v diode 78 DIODE SMD KRF7389 58A1 49-A1
Text: IC IC SMD Type HEXFET Power MOSFET KRF7389 Features Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit VDS 30 -30 V ID 7.3
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KRF7389
-100A/
smd diode 74a
smd 1a 24v diode
78 DIODE SMD
KRF7389
58A1
49-A1
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type HEXFET Power MOSFET KRF9640S TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Surface Mount Available in Tape & Reel +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 Fast Switching Ease of Paralleling 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54
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KRF9640S
O-263
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Untitled
Abstract: No abstract text available
Text: TVS '" S f l S i0 p L V O li 0 CiE.; F UDP r'SBSOr’F: SMDJ5.D G h r ’ t., SMDJ17GCA D E S C R IP T IO N This T V S family is a series of silicon transient voltage suppressors for use in applications where large voltage transients can permanently dam age voltage sensitive components.
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SMDJ17GCA
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3N0609
Abstract: smd diode marking 77 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 SP0000-88715 SMD MARKING Asf
Text: IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 8.8 mΩ ID 77 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPB77N06S3-09
IPI77N06S3-09,
IPP77N06S3-09
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
EIA/JESD22-A114-B
SP0000-88715
3N0609
smd diode marking 77
marking CODE R SMD DIODE
TRANSISTOR SMD MARKING CODE ag
IPB77N06S3-09
IPI77N06S3-09
IPP77N06S3-09
PG-TO263-3-2
SP0000-88715
SMD MARKING Asf
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Untitled
Abstract: No abstract text available
Text: IPB091N06N G OptiMOS Power-Transistor IPP091N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 8.8 mΩ 80 A • 175 °C operating temperature
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IPB091N06N
IPP091N06N
PG-TO220-3
PG-TO263-3
P-TO220-3-1
P-TO263-3-2
091N06N
091N06N
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smd G47
Abstract: PG-TO220-3 d80 DIODE
Text: IPB091N06N G OptiMOS Power-Transistor IPP091N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 8.8 m: 80 A • 175 °C operating temperature • Avalanche rated
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IPB091N06N
IPP091N06N
PG-TO220-3
091N06N
PG-TO263-3
smd G47
PG-TO220-3
d80 DIODE
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PG-TO220-3
Abstract: PG-TO263-3-2 d80 DIODE
Text: IPB091N06N G OptiMOS Power-Transistor IPP091N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 9.1 mΩ 80 A • 175 °C operating temperature
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IPB091N06N
IPP091N06N
PG-TO220-3-1
PG-TO263-3-2
091N06N
PG-TO220-3
PG-TO263-3-2
d80 DIODE
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Schottky Diodes L43 SMD
Abstract: TBAT54A smd 662 transistor L43 SMD BAT54A BAT54C SMD l43 MARKING 8805 smd diode L43
Text: TBAT54A, TBAT54C Series Low Power Schottky Diodes Features: • Very low turn-on voltage and ultra-fast switching diodes, suitable for UHF detectors and other high frequency switching circuits. • Supplied on 8mm tape. SOT-23 Formed SMD Package BAT54A Package Outline Details
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TBAT54A,
TBAT54C
OT-23
BAT54A
BAT54C
Schottky Diodes L43 SMD
TBAT54A
smd 662
transistor L43 SMD
BAT54A
BAT54C
SMD l43
MARKING 8805
smd diode L43
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smd 7333 A
Abstract: cd 5411 TBAT54 smd 662
Text: TBAT54 Low Power Schottky Diodes Features: • Very low turn-on voltage and ultra-fast switching diodes, suitable for UHF detectors and other high frequency switching circuits. • Supplied on 8mm tape. SOT-23 Formed SMD Package Package Outline Details Pin Configuration
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TBAT54
OT-23
smd 7333 A
cd 5411
TBAT54
smd 662
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Untitled
Abstract: No abstract text available
Text: SM DJ5.0 PROlEK DEVICES thru .Engineered solutions fo r the transient environment SMDJ17DCA HIGH CURRENT DISCRETE T V S APPLICATIONS • • • • 3,000 WATTS General Power Bus Protection UPS Power Switches DC Board Level Protection Industrial & Commercial Power Circuits
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SMDJ17DCA
DO-214AB
SMDJ160
SMDJ160A
SMDJ170
SMDJ170A
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ANPS071E
Abstract: IEC61249-2-21 SPB100N03S2-03 SPP100N03S2-03
Text: SPB100N03S2-03G OptiMOS TM Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3 mΩ 100 ID • Excellent Gate Charge x RDS(on) product (FOM) A P-TO263 -3 • Superior thermal resistance • 175°C operating temperature
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SPB100N03S2-03G
P-TO263
IEC61249-2-21
SPB100N03S2-03
PN0303
SPP100N03S2-03
O263-3
ANPS071E
IEC61249-2-21
SPB100N03S2-03
SPP100N03S2-03
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