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    BQ4010Y Price and Stock

    Rochester Electronics LLC BQ4010YMA-200

    IC NVSRAM 64KBIT PARALLEL 28DIP
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    DigiKey BQ4010YMA-200 Tube 2,142 18
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    Rochester Electronics LLC BQ4010YMA-70N

    IC NVSRAM 64KBIT PARALLEL 28DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BQ4010YMA-70N Tube 1,811 23
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    Rochester Electronics LLC BQ4010YMA-85N

    IC NVSRAM 64KBIT PARALLEL 28DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BQ4010YMA-85N Tube 212 18
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    Rochester Electronics LLC BQ4010YMA-70

    IC NVSRAM 64KBIT PARALLEL 28DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BQ4010YMA-70 Tube 35 23
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    Texas Instruments BQ4010YMA-85

    IC NVSRAM 64KBIT PARALLEL 28DIP
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    Verical BQ4010YMA-85 94 18
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    Rochester Electronics BQ4010YMA-85 111 1
    • 1 $16.89
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    • 100 $15.88
    • 1000 $14.36
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    Find more BQ4010Y price and stock on Findchips.com

    BQ4010Y Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    bq4010Y Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010Y Benchmarq 8Kx8 Nonvolatile SRAM Scan PDF
    BQ4010Y-150 Texas Instruments IC NVRAM NVSRAM PARALLEL 64KBIT 5V 28DIP Original PDF
    BQ4010Y-200 Benchmarq nvSRAM Original PDF
    BQ4010Y-70 Benchmarq nvSRAM Original PDF
    BQ4010Y-85 Benchmarq nvSRAM Original PDF
    BQ4010YEBZ-70N Texas Instruments BQ4010 - IC 8K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA28, DIP-28, Static RAM Original PDF
    BQ4010YMA-150 Texas Instruments 8Kx8 Nonvolatile SRAM, 10% Voltage Tolerance 28-DIP MODULE 0 to 70 Original PDF
    bq4010YMA-150 Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF
    bq4010YMA-150 Texas Instruments 8k x 8 Nonvolatile SRAM Original PDF
    BQ4010YMA-150 Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010YMA-150N Texas Instruments 8Kx8 Nonvolatile SRAM, 10% Voltage Tolerance 28-DIP MODULE -40 to 85 Original PDF
    bq4010YMA-150N Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF
    BQ4010YMA-150N Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010YMA-200 Texas Instruments 8Kx8 Nonvolatile SRAM, 10% Voltage Tolerance 28-DIP MODULE 0 to 70 Original PDF
    bq4010YMA-200 Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF
    BQ4010YMA-200 Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010YMA-200N Texas Instruments BQ4010 - IC 8K X 8 NON-VOLATILE SRAM, 200 ns, DMA28, Static RAM Original PDF
    bq4010YMA-200N Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF
    BQ4010YMA-200N Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF

    BQ4010Y Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4010/bq4010Y 28-pin 10-year bq4010 536-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4010/bq4010Y bq4010 536-bit 28-pin 10-year PDF

    Untitled

    Abstract: No abstract text available
    Text: h bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description ► Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010YMA-85N -150N. bq4010 PDF

    bq4010

    Abstract: bq4010Y bq4010YMA-85N
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010Y bq4010YMA-85N PDF

    Untitled

    Abstract: No abstract text available
    Text: BENCHHARÛ MICROELEC bflE D • 137afln 0Q01S11 TTS H B E N bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >■ D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral


    OCR Scan     		137afln 0Q01S11 bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010YMA-85N -150N. PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		bq4010/bq4010Y bq4010 536-bit lithi50N. bq4010-70 bq4010Y-70 bq4010YMA-70N bq4010 bq401 PDF

    bq4010

    Abstract: bq4010Y bq4010YMA-85N
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010Y bq4010YMA-85N PDF

    M48128Y

    Abstract: ds1245y DS1225Y
    Text: De usili • - S i1 ! i : i ; : í ; í ! u c í í : n 31 fVlb ro e :e o h i ■¡î i c ■. ;î.f i .1 o - DS1225AB M48Z08 DS1225AD M48Z18 bq4010Y M48Z58 bq4010/4823Y M48Z58Y bq4010Y bq4010


    OCR Scan     		bq4010 bq4010Y bq4010/4823Y bq4011 bq4011Y/4833Y bq4013 bq4013Y bq4014 DS1225AB M48128Y ds1245y DS1225Y PDF

    bq4010

    Abstract: bq4010MA bq4010Y bq4010YMA
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010MA bq4010Y bq4010YMA PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		bq4010/bq4010Y bq4010 536-bit 28-pin bq4010YMA-85N -150N. bq4010 PDF

    Untitled

    Abstract: No abstract text available
    Text: bq401 Q/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		bq401 Q/bq4010Y bq4011 144-bit 28-pin 10-year PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4010/bq4010Y 28-pin 10-year bq4010 536-bit BQ4010MA-85 PDF

    bq4010

    Abstract: bq4010Y bq4010YMA-85N
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010Y bq4010YMA-85N PDF

    bq4010Y-xxxN

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		bq4010/bq4010Y bq4010 536-bit bq4010YMA-85N -150N. bq4010-70 bq4010Y-70 bq4010YMA-70N bq4010Y-xxxN PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4010/bq4010Y 28-pin 10-year bq4010 536-bit PDF

    bq4010

    Abstract: bq4010Y
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010Y PDF

    bq4010

    Abstract: bq4010Y bq4010YMA-85N
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010Y bq4010YMA-85N PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		bq4010/bq4010Y bq4010 536-bit bq4010YMA-85N -150N. bq4010 PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq401 OY UNITRODE- 8Kx8 Nonvolatile SRAM Features General Description > D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		bq4010/bq401 bq4010 536-bit bq4010YMA-70N bq4010-70 bq4010/bq4010Y bq401Q 150ns 200ns PDF

    bq4010

    Abstract: bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y
    Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		bq4010/Y/LY SLUS116A 28-Pin 536-bit bq4010 bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		bq4010/Y/LY SLUS116A 28-Pin 536-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		bq4010/Y/LY SLUS116A 28-Pin 536-bit PDF

    TMS44C256

    Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
    Text: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore


    Original     		16Kbit 64Kbit 256Kbit 600mil) 300mil) TMS44C256 HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross PDF

    ST L1117

    Abstract: ST MICROELECTRONICS L1117 33 LM7905 TO-92 ENE CP2211 CP2211 TL496 equivalent cp2206 MC34153 L7805 SOT 89 transistor L7905
    Text: Technology for Innovators TM Standard Linear Products Cross-Reference Including Amplifiers, Comparators, Timers, Peripheral Drivers, Power Management Controllers, References, Regulators, Supervisors, Shunts, Transmitters and Receivers INTERFACE COMPARATORS


    Original     		A011905 ST L1117 ST MICROELECTRONICS L1117 33 LM7905 TO-92 ENE CP2211 CP2211 TL496 equivalent cp2206 MC34153 L7805 SOT 89 transistor L7905 PDF