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ams OSRAM Group BPY-62 SENSOR PHOTO 830NM TOP TO206AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BPY-62	Bulk	3,289		1	1 $2.61 10 $1.747 100 $2.61 1000 $1.22124 10000 $1.22124	Buy Now
ams OSRAM Group BPY-62-3-4 SENSOR PHOTO 830NM TOP TO206AA
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DigiKey	BPY-62-3-4	Bulk	1,478		1	1 $3.36 10 $2.255 100 $3.36 1000 $1.39302 10000 $1.27692	Buy Now
ams OSRAM Group BPY-62-4 SENSOR PHOTO 830NM TOP TO206AA
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DigiKey	BPY-62-4	Bulk	554		1	1 $3.09 10 $2.085 100 $3.09 1000 $1.40988 10000 $1.40988	Buy Now
ams OSRAM Group BPY 62 Phototransistor Chip Silicon 830nm 3-Pin TO-18 - Bulk (Alt: Q60215Y0062)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	BPY 62	Bulk		10 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $1.01254	Buy Now
Mouser Electronics	BPY 62		1,515			1 $2.53 10 $1.71 100 $1.29 1000 $1.22 10000 $1.22	Buy Now
Newark	BPY 62	Bulk	3		1	1 $2.49 10 $1.66 100 $1.35 1000 $1.27 10000 $1.27	Buy Now
ams OSRAM Group BPY62-3/4 Phototransistor Chip Silicon 830nm 3-Pin TO-18 - Bulk (Alt: Q62702P5198)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	BPY62-3/4	Bulk		18 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $1.11378	Buy Now
EBV Elektronik	BPY62-3/4			11 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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BPY62 Datasheets (26)

Part	Manufacturer	Description	Datasheet Type	PDF
BPY62	Infineon Technologies	Silicon NPN Phototransistor	Original	PDF
BPY 62	OSRAM Opto Semiconductors	Sensors, Transducers - Optical Sensors - Phototransistors - PHOTOTRANSISTOR TO-18	Original	PDF
BPY62	Siemens	Silicon NPN Phototransistor	Original	PDF
BPY62	Siemens	NPN-Silizium-Fototransistor Silicon NPN Phototransistor	Original	PDF
BPY62	Ferranti Semiconductors	Quick Reference Guide 1985	Scan	PDF
BPY62	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
BPY62	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF
BPY62	Unknown	Diode, Transistor, Thyristor Datasheets and more	Scan	PDF
BPY62-1	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
BPY62-2	Siemens	NPN-Silizium-Fototransistor Silicon NPN Phototransistor	Original	PDF
BPY62-2	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
BPY62-3	OSRAM	Silicon NPN Phototransistor	Original	PDF
BPY62-3	Siemens	NPN-Silizium-Fototransistor Silicon NPN Phototransistor	Original	PDF
BPY62-3	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF

BPY62-3--4	Infineon Technologies	Silicon NPN Phototransistor	Original	PDF
BPY62-3/4	OSRAM	Phototransistor Module, 0.000000005 Dark Current, TO-18	Original	PDF
BPY62-3/4	OSRAM	Optical Sensors - Phototransistors, Sensors, Transducers, PHOTOTRANSISTOR NPN 830NM TO-18	Original	PDF
BPY 62-3/4	OSRAM Opto Semiconductors	Sensors, Transducers - Optical Sensors - Phototransistors - PHOTOTRANSISTOR NPN 830NM TO-18	Original	PDF
BPY62-4	OSRAM	Silicon NPN Phototransistor	Original	PDF
BPY62-4	OSRAM	Optical Sensors - Phototransistors, Sensors, Transducers, PHOTOTRANSISTOR NPN NM TO-18	Original	PDF

BPY62 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
k2645 Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt	Original	PDF	MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
VARTA 20DK Abstract: BPX81 circuit infrared phototransistor for tv BPY62 VARTA 60 dk 20DK BPY62 application VARTA 3.6 v 70 ma Phototransistors Sunny Oscillators Text: General Photoelectric Applications Circuits Appnote 36 1. Suppression of DC Component in Photocurrent of Phototransistors Due to the by-passing of the base-emitter junction of T2 by capacitor C1, this control mechanism is ineffective during rapid changes. The cut-off frequency above, at which the control	Original	PDF
npn phototransistor package Abstract: glass lens phototransistor Text: BPY62 SIEMENS SILICON NPN PHOTOTRANSISTOR Package Dimensions in Inches mm .570(14.51 I . .810(5.35) 1 .1 9 8 (5 .05 ) .4 9 2 ( 12 .5 ) 0.1»,— i (2 5 4 )1- T 0 mf \ (0.46) V .216(5.5) .210(5.35) Chip Location Maximum Ratings FEATURES • • •	OCR Scan	PDF	BPY62 npn phototransistor package glass lens phototransistor
BPY62 Abstract: Phototransistor to-18 glass lens phototransistor Text: SIEMENS AKTIENGESEL LSCH AF 47E D flS3SbGS 002750b S « S I E Û SIEM ENS BPY62 SERIES PHOTOTRANSISTOR Package Dimensions in Inches mm m 018 I0 45) — ,6 a 217 (5 5) 211 (5 35) 0 1 (2 54) 187 \ (4 75) Max \ \ Radiant Sensitive Area Maximum Ratings Operating and Storage Temperature (T ^ , T^ .	OCR Scan	PDF	002750b BPY62 Phototransistor to-18 glass lens phototransistor
Diode ev Abstract: glass lens phototransistor Text: SIEMENS CMPNTS t OPTO H4E D • flS3b32b QQDS227 3 * S I E X S IE M E N S BPY62 SERIES PHOTOTRANSISTOR T-41-61 Package Dimensions in Inches mm .110 -~ 4 .s u - .018 (0.45) 217 (5.5) .211 (5 35) .110 (2 .8 ) .106 (2.7) L \|0 1 (2 54) n 571 (14 5) ' .492 (12 5)	OCR Scan	PDF	flS3b32b QQDS227 BPY62 T-41-61 A23b32b GGQS22Ô Diode ev glass lens phototransistor
Q62702-P1641 Abstract: No abstract text available Text: Si-Fotodetektoren im hermetisch dichten Metallgehäuse Type R adiant /peg *—950 sensitive nm, Ee= 0 .5 m W /cm 2, ( / c =1 mA, V tt= 5 V ) RL=5011) area BPY62 ^C E O Ui ^•10% mA V nm 0 12 0.5 .2 .5 50 4 2 0 . 1130 - Q60215-Y62 5 Q 60215-Y 1111 0 8 . 1.6	OCR Scan	PDF	Q60215-Y62 60215-Y 62702-P Q62702-P16 Q62702-P16-S2 Q62702-P16-S3 Q62702-P16-S4 Q62702-P16-S5 Q62702-P1641
BPY62 Abstract: No abstract text available Text: BPY62 Silicon NPN Phototransistor Characteristics TA=25°C, X=950 nm Parameter APPLICATIO NS • Photointerrupters • Industrial electronics • For control and drive circuits DESCRIPTIO N Unit ^Smax 850 nm Spectral Sensitivity Range X 420 to 1130 Radiant Sensitive Area	OCR Scan	PDF	BPY62 1000lx, BPY62
SFH317-2 Abstract: SFH317-4 SFH501-2 SFH317F-4 sfh309-2 BP103-5 SFH309-3 BPY62-2 SFH317 LPT 80a Text: Phototransistors Package Outline Part Typ* H«K Photocurrant Angl« XuSSOmn C ofttdor Emftter Vce-SV » V lreE(niA) SFH320-2 SFH320-3 L fc SFH320F-2 SFH320F-3 16-32 JiA SMTTOP-LED SMTTOPLED, daylight filter ±60” BP103B-4 SFH303-2 SFH303-3 SFH303-4 SFH303F-2	OCR Scan	PDF	SFH320-2 SFH320-3 SFH320F-2 SFH320F-3 BP103B-2 BP103B-3 BP103B-4 SFH303-2 SFH303-3 SFH303-4 SFH317-2 SFH317-4 SFH501-2 SFH317F-4 sfh309-2 BP103-5 SFH309-3 BPY62-2 SFH317 LPT 80a
TIL78 Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71 Text: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE	OCR Scan	PDF
TIL78 Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	PDF
TIL78 Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06 Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C	OCR Scan	PDF	NPN110. fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; TIL78 SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
TIL78 Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C	OCR Scan	PDF	NPN110. fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; TIL78 photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
TIL81 Abstract: Phototransistor TIL81 Phototransistor TIL100 lens photodiode phototransistor Phototransistor bpx25 Phototransistor zm110 Infrared phototransistor TO18 BPW41D ferranti Text: SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIO N S OF FERRANTI PHOTOTRANSISTORS Alarm Systems, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash Control, etc. ZM100 SER IES TO-18 HERM ETIC ZM100/110, BPX25/29	OCR Scan	PDF	ZM100 ZM100/110, BPX25/29) ZM110 BPX25 MRD310. ZM110 MRD370 ZM100 TIL81 Phototransistor TIL81 Phototransistor TIL100 lens photodiode phototransistor Phototransistor bpx25 Phototransistor zm110 Infrared phototransistor TO18 BPW41D ferranti
8PX43 Abstract: SFH415T GKDb L81a SFH402-2 SFH910 SFH485 SFH462 sfh481-3 LD275 Text: Infrared Emitters Radiant Intensity Package Outline Part Number Package TVP» Half Angle Surga Currant Features Page A SFH420 SMTTOPLED ±60" SFH421 SMTTOPLED ± 60 ° 2.5-5 too GaAs, 950 nm. On tape and reel. 7-25 4-8 100 GaAIAs, 880 nm. On tape and reel.	OCR Scan	PDF	SFH420 SFH421 BP104 BP103. SFH205, BP104, BP103B. LD271 LD271L LD274-1 8PX43 SFH415T GKDb L81a SFH402-2 SFH910 SFH485 SFH462 sfh481-3 LD275

TIL78 Abstract: photo transistor til78 OCP71 sp8309 sp8311 3n57 2N577 TIL-78 photo TIL78 1N4378 Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised S p ecificatio ns # N o n-JE D E C ty p e m a n u fa ctu re d outsid e u :s . a . t S w itc h in g ty p e , also lis te d in S e c tio n 12	OCR Scan	PDF	fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; BVCBO-15V; TIL78 photo transistor til78 OCP71 sp8309 sp8311 3n57 2N577 TIL-78 photo TIL78 1N4378
TIL78 Abstract: photo transistor til 78 photo transistor til78 sk 110 19 20n 2sc640 transistor 2SC286 2SC287 2SC430 400M PMT222 Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,	OCR Scan	PDF	fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; BVCBO-15V; TIL78 photo transistor til 78 photo transistor til78 sk 110 19 20n 2sc640 transistor 2SC286 2SC287 2SC430 400M PMT222
TIL78 Abstract: photo transistor til78 TIL78 em Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,	OCR Scan	PDF
H0A0872-n55 Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12 Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1	OCR Scan	PDF	1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
BPY62 Abstract: Siemens photodiode SIEMENS Phototransistors BPY Text: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor Chip position 2.7 BPY 62 Radiant sensitive area \ 00.45 .1I v _ . . 12.5 5.1 4.8 _—6.2 k 5.4 Approx. weight 1.0 g M aße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified	OCR Scan	PDF	0HF01SB8 BPY62 Siemens photodiode SIEMENS Phototransistors BPY
IR TIL81 Abstract: TIL81 Phototransistor TIL81 2 pin phototransistor diode TIL81 TIL100 PHOTOTRANSISTOR 3 PIN bpx25 phototransistor application circuit Phototransistor bpx25 phototransistor Text: BPW41D INFRA-RED PHOTODETECTOR The B P W 4 1 D is a large: area, silicon p.i.n. photodiode having a low junction capacitance and consequently capable of fast response times. The active chip is packaged in a plastic moulding which contains a near infra-red transmissive filter such that the device is sensitive to infra-red radiation only, and	OCR Scan	PDF	BPW41D BPW41D FPT220 FPT230 FPT320 FPT330 FPT400 FPT500 FPT530 FPT560 IR TIL81 TIL81 Phototransistor TIL81 2 pin phototransistor diode TIL81 TIL100 PHOTOTRANSISTOR 3 PIN bpx25 phototransistor application circuit Phototransistor bpx25 phototransistor
Phototransistor TIL81 Abstract: TIL81 Phototransistor TIL100 Phototransistor bpx25 Phototransistor zm110 Phototransistor TIL100 FERRANTI ELECTRONICS Infra-red bpx25 mrd300 equivalent Text: COMPETITOR CROSS REFERENCE LIST The following cross-reference list has been compiled as a guide for design engineers and purchasing agents and indicates the nearest Ferranti equivalent to a variety of competitive manufacturer's devices. In some cases there will be minor differences in electrical characteristics and/or package details and	OCR Scan	PDF	MRD310. ZM110 MRD370 ZM100 MRD810. MRD3050 BPX29 MRD3051 Phototransistor TIL81 TIL81 Phototransistor TIL100 Phototransistor bpx25 Phototransistor zm110 Phototransistor TIL100 FERRANTI ELECTRONICS Infra-red bpx25 mrd300 equivalent
lg 6154 Abstract: KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64 Text: Alphanumerische Bestellnummern Q-Nummern Alphanumeric Ordering Codes (Q numbers) Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Bestellnummer lyp	OCR Scan	PDF	Q60215-Y62 O60215-Y63-S1 Q60215-Y65 Q60215-Y66 Q60215-Y67 Q60215-Y111-S4 Q60215-Y111-S5 Q60215-Y1111 Q60215-Y1112 Q60215-Y1113 lg 6154 KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64
D1302 Abstract: TIL78 d1302 transistor TIXS79 D1178 D1185 til78 phototransistor 2n318 D1202 DNX4 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT	OCR Scan	PDF
SFH 255 FA Abstract: LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452 Text: AlphanumerischesTypenverzeichnis Alphanumeric Type Index Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems type Bestellnummer Seite Type Bestellnummer Seite	OCR Scan	PDF	068000-A5018 Q68000-A5017 Q68000-A5707 Q62703-N26 Q62703-N51 Q62703-N52 Q68000-A7302 Q68000-A7303 Q68000-A7304 Q68000-A8086 SFH 255 FA LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452

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BPY62 Price and Stock

ams OSRAM Group BPY-62

ams OSRAM Group BPY-62-3-4

ams OSRAM Group BPY-62-4

ams OSRAM Group BPY 62

ams OSRAM Group BPY62-3/4

BPY62 Datasheets (26)

BPY62 Datasheets Context Search

k2645

VARTA 20DK

npn phototransistor package

BPY62

Diode ev

Q62702-P1641

BPY62

SFH317-2

TIL78

TIL78

TIL78

TIL78

TIL81

8PX43

TIL78

TIL78

TIL78

H0A0872-n55

BPY62

IR TIL81

Phototransistor TIL81

lg 6154

D1302

SFH 255 FA