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    BPX65 HIGH SENSITIVE Search Results

    BPX65 HIGH SENSITIVE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation

    BPX65 HIGH SENSITIVE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Photodiode laser detector BPX-65

    Abstract: UDT Sensors BPX65 high sensitive PIN-HR008 BPX65 PIN-HR040L
    Text: High Speed Silicon Photodiodes High Speed Silicon Series UDT Sensors High Speed Silicon series are small area devices optimized for fast response time or High bandwith applications. The BPX-65 complements the rest of the high speed group with an industry standard.


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    PDF BPX-65 Photodiode laser detector BPX-65 UDT Sensors BPX65 high sensitive PIN-HR008 BPX65 PIN-HR040L

    PIN-10AP

    Abstract: PIN-10DP PIN-10D UV-005EQ PIN-5DI BPX65 high sensitive XUV-020 UV-005DC UV-013D UV-013E
    Text: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the


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    PDF diffuFIL-UV100 FIL-UV005 FIL-UV20 FIL-UV50 FIL-UV100 PIN-10AP PIN-10DP PIN-10D UV-005EQ PIN-5DI BPX65 high sensitive XUV-020 UV-005DC UV-013D UV-013E

    Detectors in communication

    Abstract: InGaAs apd photodiode BPX65 high sensitive AAS-100 InGaAs-300L fiber optic detectors Photodiode laser detector BPX-65 ingaas apd photodetector UDT Sensors
    Text: FIBER OPTIC SERIES APPLICATIONS FEATURES • Fiber Optic Communication Links • Speeds in sub ns • Video Systems • High gain • Laser Monitoring Systems • Low dark current • Computers and Peripherals • Low capacitance • Industrial Controls • TO-46 metal can


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    PDF InGaAs-100L InGaAs-300L. aAs-300L aAs-100L Detectors in communication InGaAs apd photodiode BPX65 high sensitive AAS-100 InGaAs-300L fiber optic detectors Photodiode laser detector BPX-65 ingaas apd photodetector UDT Sensors

    PIN-HR040

    Abstract: PIN-HS040 UHS-016 Photodiode laser detector BPX-65 PIN-HR008 PIN-HS020 Silicon photodiode PIN-HS040 HS-040 PIN-HS008 PIN-HR020L
    Text: FIBER OPTIC SERIES APPLICATIONS FEATURES • Fiber Optic Communication Links • Speeds in sub ns • Video Systems • High gain • Laser Monitoring Systems • Low dark current • Computers and Peripherals • Low capacitance • Industrial Controls • TO-46 metal can


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    FIL-UV50

    Abstract: FIL-UV100 PIN-10D XUV-005 UV-100 UV-100L PIN-5D PIN-5DPI UV-035DQC PIN-10AP
    Text: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the


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    PDF diffuFIL-UV100 FIL-UV005 FIL-UV20 FIL-UV50 FIL-UV100 FIL-UV50 FIL-UV100 PIN-10D XUV-005 UV-100 UV-100L PIN-5D PIN-5DPI UV-035DQC PIN-10AP

    laser range finder schematics

    Abstract: BPW34 application note "laser range finder" 254 nm uv LED SPOT-9DMI APPLICATION NOTE BpW34 far uv photodiode UDT sensors BPX65 PIN-10AP
    Text: TABLE OF CONTENTS Revision 98.3 Index and Selection Guide Photodiode Characteristics and Applications Application Notes and Further Reading Sources Standard Photodiodes, Electro-Optical Specifications and Design Notes Planar Diffused Photodiodes Photoconductive Series


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    mdd 2605

    Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
    Text: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900


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    PDF element-14 element14 mdd 2605 HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943

    WG12864A

    Abstract: 7028 SMD Transistor wh1604 WH1602B 94V0 200108 TRANSISTOR SMD MARKING CODE NM cree 3535 WH1602L WG24064A Kingbright 55-0197
    Text: Optoelectronics New products SMD LEDs White 3528 Series High Power SMD LEDs White 3535 37E Series From £0.05 See page 604 Page 599 From £0.64 12V LED Strips, 4.8W per metre 12V LED Strips, 4.8W per metre Warm white See page 610 Cool white See page 610 From


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    PDF L-934 1511A35W3 1511A35W3D 1511A35UY3 1511A35UG3 1000mcd 500mcd 200mcd 1500mcd 5mA/10mA WG12864A 7028 SMD Transistor wh1604 WH1602B 94V0 200108 TRANSISTOR SMD MARKING CODE NM cree 3535 WH1602L WG24064A Kingbright 55-0197

    0119 Solar Lamp Controller

    Abstract: transistor SMD W06 78 NXP Semiconductors 70150 TYN225 WH1602A Matsua microswitch 250V AC IRF9520 Samsung iskra BT 200 MOTOR FM 270R 74HC00M
    Text: 24 Electronic Components pp751-856:Layout 1 24/1/14 16:12 Page 751 Electronic Components CAPACITORS OPTOELECTRONICS Ceramic Capacitors Tantalum Capacitors Variable Capacitors 752 759 759 DISCRETE SEMICONDUCTORS Bridge Rectifier Diodes Diodes Transistors 766


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    PDF pp751-856 127mm 525mm 1550kHz 280kHz 2000m) 100mm 0119 Solar Lamp Controller transistor SMD W06 78 NXP Semiconductors 70150 TYN225 WH1602A Matsua microswitch 250V AC IRF9520 Samsung iskra BT 200 MOTOR FM 270R 74HC00M

    BPx65 siemens

    Abstract: BPX65 high sensitive diode BPX65 bpx65 circuit photodiode BPX65
    Text: BPX65 SIEMENS Silicon Photodiode Dimensions in inches mm .216 (5.5) ' .197(5.0)’ -U .570 (14.5) .492(12.5) ,200(5.3) [ '.197 (5.0)' T 0.018(0.45) 59 0.181 (4.6) ' .106 (2.7) Radiant sensitive area Chip Location FEATURES • Especially suitable for applications from


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    PDF BPX65 1X1012 BPx65 siemens BPX65 high sensitive diode BPX65 bpx65 circuit photodiode BPX65

    bpx65rt

    Abstract: centronic osd100 6 deep uv photodiode, GaP Centronic osd 15 AX65-RF X65EB blue enhanced photodiode array MD25 Silicon Photodetector Centronic osd 50 1064nm photodiode
    Text: RESPO N SIVITY A/W Photodiode Response Curves 200 300 400 500 600 700 800 900 1000 1100 1200 W AVELENG TH(nm ) CEnmomc ] 2 Tel: 01689 842121 Fax: 01689 845117 Making the Right Choice (•■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■a


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    PDF 900nm BPX65 AX65R2F BPX65RT X65EB centronic osd100 6 deep uv photodiode, GaP Centronic osd 15 AX65-RF blue enhanced photodiode array MD25 Silicon Photodetector Centronic osd 50 1064nm photodiode

    diode SR 315

    Abstract: BPX65 high sensitive
    Text: SIEM ENS GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters (880 nm) Chip position (2.7) Cathode (SFH 480) Anode (SFH 216, SFH 231, SFH 400) SFH 480 SFH 481 SFH 482 Radiant Sensitive area L GE006314 o a > o (O o Approx. weight 0.5 g Anode = SFH 481


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    PDF E006314 GET06091 GET06013 BPX65) diode SR 315 BPX65 high sensitive

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silizium-PIN-Fotodiode Silicon PIN Photodiode BPX 65 BPX 66 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • BPX 65: Hohe Fotoempfindlichkeit


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    PDF 0535bD5

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


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    PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


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    PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367