BPW82 Search Results

Contextual Info: BPW82 Vishay Semiconductors Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters λ p ≥ 800 nm .

bpw 82

Abstract: BPW82 M/BPW82
Contextual Info: BPW 82 TELEFUNKEN Semiconductors Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters lpy800nm .

BPW82

Contextual Info: BPW82 Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters l p 800 nm . The large active area combined with a flat case gives a

Contextual Info: BPW82 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions L x W x H in mm : 5 x 4 x 6.8 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 870 nm to

Contextual Info: BPW82 Vishay Telefunken Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters l p 800 nm .

Contextual Info: BPW82 Vishay Semiconductors Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters λ p ≥ 800 nm .

Contextual Info: Temic BPW82 S e m i c o n d u c t o r s Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package it­ self is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters X p = 800 nm .

BPW82

Contextual Info: BPW82 Vishay Telefunken Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters l p 800 nm .

BPW82

Contextual Info: BPW82 Vishay Telefunken Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters l p 800 nm .

Contextual Info: BPW82 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions L x W x H in mm : 5 x 4 x 6.8 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 870 nm to

BPW82

Contextual Info: BPW82 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions L x W x H in mm : 5 x 4 x 6.8 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 870 nm to

bpw8

Contextual Info: BPW82 VISHAY Vishay Semiconductors Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters λ p ≥ 800 nm .

BPW82

Contextual Info: BPW82 Vishay Semiconductors Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters l p 800 nm .

BPW82

Contextual Info: BPW82 Vishay Semiconductors Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters λ p ≥ 800 nm .

Contextual Info: BPW82 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions L x W x H in mm : 5 x 4 x 6.8 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 870 nm to

near IR sensors with daylight filter

Abstract: light sensing circuit project BPW34 application note BPW20RF
Contextual Info: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm

BPW34 application note

Contextual Info: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°

BPW20RF

Abstract: BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g
Contextual Info: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

BPW34 application note

Abstract: APPLICATION NOTE BpW34 lux meter calibration RB94
Contextual Info: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability

BPW46

Abstract: BPW34 osram
Contextual Info: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: p = 940 nm • High speed • High radiant power

DC24V

Abstract: 5273-12A
Contextual Info: BPW-8210 80W 24V DC-DC Open Frame Power Supply Input Range: 18~36VDC Industrial Power Supply 14.14 E 0.55 TRANSFORMER 8.38 6.78 24V 0.8 0.8 6.78 0V 15.24 3.1 1.5 DC-DC 3.3 3.8 0.4 14.44 Use #6-32 screw Protrusion limits 2.5mm x4 Features *Input Voltage: 18~36VDC

A 69157 scr

Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

c1g smd

Abstract: bpv10nf TEMD2100
Contextual Info: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -

BPW 64 photo

Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na
Contextual Info: VISHAY Vishay Telefunken Selector Guide Detectors Photo Transistors C haracteristics Dim. Package Fig- Type Photo Sensitive Area / mm 2 lca / m A @ Ee /m W /c m 2 + /- q¡ V c e = 5 V, X = 950 nm 1 tr / (j.s @ (lc = 5 mA, X = RL /k Q 950 nm) Photo Transistors in Clear Plastic Package